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    • 16. 发明授权
    • Method for producing silicon-imide
    • 生产硅酰亚胺的方法
    • US4795622A
    • 1989-01-03
    • US855453
    • 1986-04-24
    • Takeshi IsodaMikiro Arai
    • Takeshi IsodaMikiro Arai
    • C01B21/068C01B21/082
    • C01B21/068C01P2002/82C01P2002/88
    • A silicon halide, preferably SiCl.sub.4, is reacted with an excess of a base, e.g. a Lewis base or Bronsted base with steric hindrance group to produce an adduct. The adduct, which need not be separated, is treated with ammonia gas to produce the imide of silicon. A light organic solvent is used. The temperature used is -78.degree. C. to 100.degree. C. and the reaction is rapid.Byproduct ammonium halide is removed, and the imide is heated at 1000.degree. C. to 1600.degree. C. in an oven in an atmosphere containing nitrogen, to produce silicon nitride of good sintering characteristics and more than 70 wt % of which is of the .alpha.-crystal form.
    • 将卤化硅,优选SiCl 4与过量的碱反应,例如, 路易斯碱或具有空间位阻基团的布朗斯台德碱,以产生加合物。 不需要分离的加合物用氨气处理以产生硅的酰亚胺。 使用轻质有机溶剂。 使用的温度为-78℃至100℃,反应快。 除去副产物卤化铵,并将酰亚胺在含氮气氛中的烘箱中在1000℃加热至1600℃,以产生具有良好烧结特性的氮化硅,其中70重量%以上为α 晶体形式。