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    • 16. 发明授权
    • Methods of forming integrated circuit devices having polished tungsten metal layers therein
    • 形成其中具有抛光的钨金属层的集成电路器件的方法
    • US07452815B2
    • 2008-11-18
    • US11148670
    • 2005-06-09
    • Jae Seok LeeKil Sung Lee
    • Jae Seok LeeKil Sung Lee
    • H01L21/302H01L21/461
    • C11D3/14C09G1/02C11D7/06C11D7/08C11D7/263C11D11/0047H01L21/3212
    • Methods of forming integrated circuit devices use metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., ≧8 wt %) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, . . . ) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface.
    • 形成集成电路器件的方法使用具有相对低的化学蚀刻速率和相对高的机械抛光速率特性的金属CMP浆料组合物。 使用相对高浓度的机械磨料(例如> = 8重量%)与足够量的润湿剂组合以抑制下面的表面(例如,绝缘层,导电通孔)的微划痕来实现相对较高的机械抛光速率特性 ,...)被抛光。 浆料组合物还包括高度稳定的金属 - 丙二胺四乙酸酯(M-PDTA)络合物,其可以用于抑制正在抛光的金属表面上的金属氧化物再附着和/或通过与表面螯合来抑制金属表面的氧化。