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    • 11. 发明授权
    • Boost driver circuit with fast discharging function
    • 升压驱动电路具有快速放电功能
    • US07994728B2
    • 2011-08-09
    • US12384154
    • 2009-04-01
    • Kwan-Jen ChuNien-Hui KungTzu-Huan ChiuChien-Ping Lu
    • Kwan-Jen ChuNien-Hui KungTzu-Huan ChiuChien-Ping Lu
    • H05B37/00
    • H05B33/0815Y02B20/346
    • The present invention discloses a boost driver circuit which converts an input voltage to an output voltage and supplies it to a load, the boost driver circuit comprising: a power transistor electrically connected with a node between the input voltage and the output voltage; a pulse width modulation driver circuit for controlling the operation of the power transistor; an output node electrically connected with the output voltage; a feedback node electrically connected with the load; a low voltage transistor electrically connected with the feedback node; and a clamp and fast discharge circuit electrically connected with the feedback node for discharging the feedback node when the voltage at the feedback node is higher than a predetermined voltage.
    • 本发明公开了一种升压驱动器电路,其将输入电压转换为输出电压并将其提供给负载,该升压驱动电路包括:功率晶体管,其与输入电压和输出电压之间的节点电连接; 用于控制功率晶体管的操作的脉宽调制驱动电路; 与输出电压电连接的输出节点; 与负载电连接的反馈节点; 与所述反馈节点电连接的低压晶体管; 以及与反馈节点电连接的用于在反馈节点处的电压高于预定电压时对反馈节点放电的钳位和快速放电电路。
    • 15. 发明授权
    • Power safety system
    • 电力安全系统
    • US08203234B2
    • 2012-06-19
    • US12720024
    • 2010-03-09
    • Li-Wei LeeNien-Hui KungKwan-Jen ChuChun-Tsung Chen
    • Li-Wei LeeNien-Hui KungKwan-Jen ChuChun-Tsung Chen
    • H02J1/10H02J3/38
    • H02J7/0031Y10T307/544
    • A power safety system includes a first MOS, a second MOS, a switch and a body controller. The first MOS is connected between a power input and a power output. The second MOSFET is connected between the power output and a charging output. The switch has an end connected to the body of the first MOS, and the opposite end switched between the source and the drain of the first MOS. A body controller controls the switch according to the voltage at the power input and the voltage at the power output, to connect the body of the first MOS to the source or the drain of the first MOS. By switching the switch, the first MOS will have a parasitic diode effective to prevent a reverse current from the power output to the power input.
    • 电力安全系统包括第一MOS,第二MOS,开关和主体控制器。 第一个MOS连接在电源输入和电源输出之间。 第二个MOSFET连接在电源输出和充电输出之间。 开关的端部连接到第一MOS的主体,并且相对端在第一MOS的源极和漏极之间切换。 主体控制器根据电源输入端的电压和电源输出端的电压来控制开关,将第一MOS的主体连接到第一个MOS的源极或漏极。 通过切换开关,第一个MOS将有一个有效的寄生二极管,以防止从功率输出到电源输入的反向电流。
    • 19. 发明授权
    • NMOSFET-base linear charger
    • NMOSFET基线性充电器
    • US08248049B2
    • 2012-08-21
    • US12285186
    • 2008-09-30
    • Nien-Hui KungKwan-Jen Chu
    • Nien-Hui KungKwan-Jen Chu
    • G05F1/573
    • H02J7/0072
    • In an NMOSFET-base linear charger, a pair of common gate charging NMOSFET and sensing NMOSFET have their sources coupled together or virtually shorted to each other, so that these two NMOSFETs have a same gate-source voltage and thereby the sensing NMOSFET reflects the drain-source current of the charging NMOSFET on its drain-source current. From the drain-source current of the sensing NMOSFET, a current sensing signal is generated to control the gate voltage of the charging NMOSFET. By implementing the current source with NMOSFETs, the linear charger has smaller die area and less power loss.
    • 在NMOSFET基线性充电器中,一对公共栅极充电NMOSFET和感测NMOSFET的源极彼此耦合在一起或虚拟短路,使得这两个NMOSFET具有相同的栅极 - 源极电压,从而感测NMOSFET反射漏极 在其漏极 - 源极电流上充电NMOSFET的源极电流。 从感测NMOSFET的漏源电流产生电流感测信号以控制充电NMOSFET的栅极电压。 通过使用NMOSFET实现电流源,线性充电器具有更小的管芯面积和更少的功率损耗。