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    • 14. 发明授权
    • Synthesis of a derivative of GRF and intermediate peptides
    • GRF和中间体肽衍生物的合成
    • US4774319A
    • 1988-09-27
    • US119279
    • 1987-11-09
    • Keiichi OnoYoshiyuki KaiYoshiaki TakebayashiAkihiko SanoKazushi Suwa
    • Keiichi OnoYoshiyuki KaiYoshiaki TakebayashiAkihiko SanoKazushi Suwa
    • A61K38/00C07K14/60C07K7/06C07K7/08C07K7/10
    • C07K14/60A61K38/00Y02P20/55Y10S930/12
    • A process for the manufacture of a polypeptide (I) having the formula: ##STR1## which comprises steps of: (a) coupling, successively and in the order of the sequence of the polypeptide (I), the four protected fragments A, B, C and D or five protected fragments A, B, C, E and F,said fragment A by the formula, Leu-Gin-Asp-Ile-Met-Ser-Arg-NH.sub.2said fragment B by the formula, Gln-Leu-Ser-Ala-Arg-Lys-Leusaid fragment C by the formula, Arg-Lys-Val-Leu-Glysaid fragment D by the formula, Tyr-Ala-Asp-Ala-Ile-Phe-Thr-Asn-Ser-Tyrsaid fragment E by the formula, Ile-Phe-Thr-Asn-Ser-Tyrand said fragment F by the formula, Tyr-Ala-Asp-Ala being represented, respectively, and(b) eliminating, at the end of sequence, all the protecting groups to provide the polypeptide (I) which is active on the stimulation of the release of the growth hormone and thus is very useful as medicine for treatment of growth hormone deficiency disease and the like.
    • 一种制备具有下式的多肽(I)的方法:其包括以下步骤:(a)依次和按照多肽(I ),四个保护的片段A,B,C和D或五个保护的片段A,B,C,E和F,所述片段A通过式Leu-Gin-Asp-Ile-Met-Ser-Arg-NH2表示 片段B由式Gln-Leu-Ser-Ala-Arg-Lys-Leu表示,由式Arg-Lys-Val-Leu-Gly表示的片段C表示下式的Tyr-Ala-Asp-Ala- Ile-Phe-Thr-Asn-Ser-Tyr分别表示分子式为Ile-Phe-Thr-Asn-Ser-Tyr的片段E和由式Tyr-Ala-Asp-Ala表示的所述片段F,以及 (b)在序列结束时,除去所有保护基以提供在刺激生长激素释放方面具有活性的多肽(I),因此作为治疗生长激素缺乏症的药物非常有用, 类似。
    • 16. 发明授权
    • Butyrophenone compounds as psychotropics
    • 丁基酮化合物作为PSYCHOTROPICS
    • US4039670A
    • 1977-08-02
    • US568819
    • 1975-04-17
    • Kikuo SasajimaKeiichi OnoMasaru NakaoHisao Yamamoto
    • Kikuo SasajimaKeiichi OnoMasaru NakaoHisao Yamamoto
    • C07D295/10A61K31/435A61K31/443A61K31/445A61K31/451A61P9/12A61P25/00A61P25/02A61P25/04A61P25/20A61P29/00C07D211/14C07D211/52C07D405/06C07D471/10C07D487/10A01N9/22
    • C07D211/52
    • Butyrophenone compounds having excellent psychotropic activities represented by the formula: ##STR1## wherein R.sup.1 is a halogen atom, R.sup.2 is a lower alkyl group, and Z is a group of either one of the formulae: ##STR2## (wherein the dotted line indicates the optional presence of an additional single bond linkage, R.sup.3 is a hydrogen atom or a hydroxyl group but only when said additional single bond linkage is not present and R.sup.4 is a hydrogen atom or a phenyl or benzyl group optionally substituted with one or two substituents selected from the group consisting of halogen, lower alkyl, lower alkyoxy and trifluoromethyl on the benzene ring (except monohalophenyl)), ##STR3## (wherein the dotted line indicates the optional presence of an additional single bond linkage, R.sup.5 is a hydrogen atom or a lower alkyl group and R.sup.6 and R.sup.7 are each a hydrogen atom, a halogen atom or a lower alkyl group), ##STR4## (wherein R.sup.8 is a hydrogen atom or a lower alkyl group and R.sup.9 is a hydrogen atom, a halogen atom, a lower alkyl group or a lower alkoxy group), ##STR5## (wherein R.sup.10 is a hydrogen atom, a halogen atom, a lower alkyl group, a lower alkoxy group or a trifluoromethyl group), or ##STR6##
    • 其中R1为卤原子,R2为低级烷基,Z为下列任何一个基团的基团:其中虚线表示的具有极好的精神活性的丁基苯酚化合物由下式表示: 线表示任选地存在另外的单键键,R3是氢原子或羟基,但仅在所述另外的单键键不存在且R4是氢原子或任选被一个或两个取代基取代的苯基或苄基时 取代基选自苯环上的卤素,低级烷基,低级烷氧基和三氟甲基(单卤代苯基除外)),其中虚线表示任选地存在另外的单键键,R5是 氢原子或低级烷基,R6和R7各自为氢原子,卤素原子或低级烷基),其中R8为氢原子或低级烷基,R9为 氢原子,卤素 原子,低级烷基或低级烷氧基),其中R 10为氢原子,卤素原子,低级烷基,低级烷氧基或三氟甲基。 (5)
    • 20. 发明授权
    • Method for forming dummy pattern in a semiconductor device
    • 在半导体器件中形成虚拟图案的方法
    • US5459093A
    • 1995-10-17
    • US214141
    • 1994-03-17
    • Hideaki KurodaKeiichi Ono
    • Hideaki KurodaKeiichi Ono
    • H01L21/3205G06F17/50H01L21/82H01L23/52H01L27/02H01L21/70H01L27/00
    • H01L27/0207Y10S438/926
    • Method of forming a dummy pattern without inducing crosstalk between conductive interconnects which would normally be caused by increase in capacitance between the interconnects. Also, absolute steps of devices are made uniform. Furthermore, the flatness of devices is improved. In a device having a multilayer aluminum metallization structure, let Chip be data about a region on which a dummy pattern should be defined. Let I.sub.Mi be data about a region occupied by an aluminum interconnect pattern on the ith layer. Let I.sub.Di be data about a dummy pattern on the ith layer, or data sought for. Let (Chip-I.sub.Mi).sub.D be data about the dummy pattern region obtained by decrement of data. The data (Chip-I.sub.Mi).sub.D about the dummy pattern region is ANDed with data I.sub.M(i+1) about the conduction pattern on the (i+1)th layer or with data I.sub.D(i+1) about the dummy pattern. Thus, data I.sub.Di about the dummy pattern is created. The dummy pattern on the ith layer is created, based on the created data I.sub.Di.
    • 形成虚设图案的方法,而不会引起通常由互连之间的电容增加引起的导电互连之间的串扰。 此外,设备的绝对步骤均匀。 此外,设备的平坦度得到改善。 在具有多层铝金属化结构的器件中,令芯片是关于其上应限定虚拟图案的区域的数据。 使IMi是关于第i层上的铝互连图案所占据的区域的数据。 让IDi是关于第i层上的虚拟模式或寻求的数据的数据。 令(Chip-IMi)D是通过数据递减获得的虚拟图形区域的数据。 关于虚拟图案区域的数据(Chip-IMi)D与关于第(i + 1)层上的导电图案的数据IM(i + 1)或关于虚拟图案的数据ID(i + 1)进行AND。 因此,创建关于虚拟图案的数据IDi。 基于创建的数据IDi创建第i层上的虚拟模式。