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    • 11. 发明专利
    • JOSEPHSON JUNCTION ELEMENT
    • JPS62213179A
    • 1987-09-19
    • JP5564686
    • 1986-03-13
    • NIPPON TELEGRAPH & TELEPHONE
    • INOUE TAKASHIKAWAKAMI GOJITAKAYANAGI HIDEAKI
    • H01L39/22
    • PURPOSE:To obtain characteristics as a remarkably excellent Josephson junction element by using a first superconducting electrode as a single crystal semiconductor region displaying superconductivity by a superconducting proximity effect by a third superconducting electrode. CONSTITUTION:A single crystal semiconductor substrate 21, on the upper surface side thereof a projecting section 22 is shaped, is formed, and two third superconducting electrodes 23 and 24 are annexed onto the upper surface of the substrate 21, holding the projecting section 22. Since the whole region of the cross direction of the projecting section 22 in the single crystal semiconductor substrate 21 is selected in width sufficient for displaying superconductivity by a superconducting proximity effect by the third superconducting electrodes 23 and 24, the projecting section 22 represents a single crystal semiconductor region 25 displaying superconductivity by the superconducting proximity effect by the third superconducting electrodes 23 and 24 in the single crystal semiconductor substrate 21. A second superconducting electrode 12 is formed onto the single crystal semiconductor substrate 25 through a tunnel barrier layer 13.
    • 12. 发明专利
    • CONSISTENCY DETERMINING DEVICE, METHOD, AND PROGRAM OF PROGRAM EXECUTION PROCEDURE
    • JP2006350625A
    • 2006-12-28
    • JP2005175094
    • 2005-06-15
    • NIPPON TELEGRAPH & TELEPHONE
    • YOSHIDA HIROSHIINOUE TAKASHIYAMAMURA TETSUYA
    • G06F9/44
    • PROBLEM TO BE SOLVED: To determine the consistency of program execution procedures without constituting a mechanism for actually operating an execution target in each execution procedure for composing the program execution procedure. SOLUTION: The program execution procedure in which at least two execution procedures comprising the execution target and an action applied to the execution target are arranged in the order of execution is accumulated in an execution procedure accumulation section 1. Execution target data comprising the target of each execution procedure, the state of each target, the relationship between targets that has the type of the target and the target of origin and arrival sides and is determined according to the type of the target, and the like are accumulated in the execution target database. Each execution procedure of the program execution procedure is sent to an execution procedure executability determination section 5 for determining whether it can be executed. When it is determined that the procedure can be executed, the state of the target in the execution target database 2 and the state of other related targets are rewritten by an execution procedure influence reflection section 6. When all execution procedures can be executed, the consistency is notified via a user notification section 7. COPYRIGHT: (C)2007,JPO&INPIT
    • 16. 发明专利
    • FORMATION OF MULTILAYER INTERCONNECTING STRUCTURE
    • JPH11251434A
    • 1999-09-17
    • JP6220098
    • 1998-02-26
    • NIPPON TELEGRAPH & TELEPHONE
    • INOUE TAKASHIHIRANO MAKOTO
    • H01L21/768H01L21/312H01L23/522
    • PROBLEM TO BE SOLVED: To prevent the deterioration of connecting status of a third layer and a second layer with each wiring layer by using benzocyclobutene, which has a relatively high water absorbing characteristic and does not release water, for each of a first, second and a third insulating layers. SOLUTION: On a substrate in which a semiconductor layer is formed on a semiconductor substrate main body, a low water absorption non-water releasing insulating layer composed of benzocyclobutene, which has a non-water releasing characteristics of not releasing water even with a low water absorption at a low temperature, is formed as an insulating layer 11' of a first layer. Then, on the insulating layer 11' of the first layer, a second insulating layer 21' having low water absorbing/non-water releasing characteristics is formed of benzocyclobutene, so as to extend to cover a wiring layer 12 of a first layer. Etching process is performed on the insulating layer 21' of a second layer at a mask layer, and a window 23' is formed to expose the wiring layer 12 of the first layer to the external. Then, on the insulating layer 21' of the second layer, a wiring layer 22 of the second layer which connects with the wiring layer 12 of the first layer is formed on the insulating layer 21' of the second layer through the window 23'. Then, on the insulating layer 21' of the second layer, a third insulating layer 31' is formed of benzocyclobutene to cover the wiring layer 22 of the second layer.