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11. 发明申请

US20120241645A1 MASK INSPECTION APPARATUS AND MASK INSPECTION METHOD 失效
标题翻译：屏蔽检查装置和屏蔽检查方法
公开(公告)号：US20120241645A1
公开(公告)日：2012-09-27
申请号：US13416282
申请日：2012-03-09
申请人： Shinji YAMAGUCHI , Masato Naka , Hiroyuki Kashiwagi , Masamitsu Itoh
发明人： Shinji YAMAGUCHI , Masato Naka , Hiroyuki Kashiwagi , Masamitsu Itoh
IPC分类号： G01N21/88
CPC分类号： G03F1/84 , G01N23/225 , G01N2021/95676
摘要： According to one embodiment, a mask inspection apparatus includes a decompression chamber, a holder, a light irradiation unit, a detection unit, an electrode, and a control unit. The holder is provided in the decompression chamber and holds a mask. The light irradiation unit irradiates a major surface of the mask held by the holder with a light. The detection unit is provided in the decompression chamber to detect electrons generated when the major surface of the mask is irradiated with the light. The electrode is provided between the holder and the detection unit and guides the electrons in a direction from the holder toward the detection unit. The control unit compares a detection result of the electrons detected by the detection unit with a reference value.
摘要翻译：根据一个实施例，掩模检查装置包括减压室，保持器，光照射单元，检测单元，电极和控制单元。保持器设置在减压室中并保持面罩。光照射单元用光照射由保持器保持的面罩的主表面。检测单元设置在减压室中以检测当用光照射掩模的主表面时产生的电子。电极设置在保持器和检测单元之间并且引导电子沿着保持器朝向检测单元的方向。控制单元将由检测单元检测的电子的检测结果与参考值进行比较。

12. 发明授权

US08669522B2 Mask inspection apparatus and mask inspection method 失效
标题翻译：面膜检查仪和面膜检查方法
公开(公告)号：US08669522B2
公开(公告)日：2014-03-11
申请号：US13416282
申请日：2012-03-09
申请人： Shinji Yamaguchi , Masato Naka , Hiroyuki Kashiwagi , Masamitsu Itoh
发明人： Shinji Yamaguchi , Masato Naka , Hiroyuki Kashiwagi , Masamitsu Itoh
IPC分类号： H01J37/28
CPC分类号： G03F1/84 , G01N23/225 , G01N2021/95676
摘要： According to one embodiment, a mask inspection apparatus includes a decompression chamber, a holder, a light irradiation unit, a detection unit, an electrode, and a control unit. The holder is provided in the decompression chamber and holds a mask. The light irradiation unit irradiates a major surface of the mask held by the holder with a light. The detection unit is provided in the decompression chamber to detect electrons generated when the major surface of the mask is irradiated with the light. The electrode is provided between the holder and the detection unit and guides the electrons in a direction from the holder toward the detection unit. The control unit compares a detection result of the electrons detected by the detection unit with a reference value.
摘要翻译：根据一个实施例，掩模检查装置包括减压室，保持器，光照射单元，检测单元，电极和控制单元。保持器设置在减压室中并保持面罩。光照射单元用光照射由保持器保持的面罩的主表面。检测单元设置在减压室中以检测当用光照射掩模的主表面时产生的电子。电极设置在保持器和检测单元之间并且引导电子沿着保持器朝向检测单元的方向。控制单元将由检测单元检测的电子的检测结果与参考值进行比较。

13. 发明授权

US08407629B2 Pattern verification-test method, optical image intensity distribution acquisition method, and computer program 有权
标题翻译：模式验证测试方法，光学图像强度分布采集方法和计算机程序
公开(公告)号：US08407629B2
公开(公告)日：2013-03-26
申请号：US13491639
申请日：2012-06-08
申请人： Masamitsu Itoh , Satoshi Tanaka
发明人： Masamitsu Itoh , Satoshi Tanaka
IPC分类号： G06F17/50
CPC分类号： G03F1/86
摘要： A pattern verification-test method according to an embodiment of the present invention includes: deriving an illumination condition at a verification-test subject position in a photomask surface of a mask pattern as a verification or a test subject based on the verification-test subject position and illumination condition information about a distribution of an illumination condition in a photomask surface of exposure light incident on the mask pattern, performing lithography simulation on the mask pattern based on the derived illumination condition and the mask pattern, and verifying or testing the mask pattern based on a result of the lithography simulation.
摘要翻译：根据本发明的实施例的图案验证测试方法包括：基于验证测试对象位置，在掩模图案的光掩模表面中的验证测试对象位置处作为验证或测试对象导出照明条件以及关于入射到掩模图案的曝光光的光掩模表面中的照明条件的分布的照明条件信息，基于导出的照明条件和掩模图案对掩模图案进行光刻模拟，以及基于掩模图案的验证或测试在光刻模拟的结果。

14. 发明申请

US20080124633A1 PHOTOMASK UNIT, EXPOSING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：光电单元，制造半导体器件的曝光方法和方法
公开(公告)号：US20080124633A1
公开(公告)日：2008-05-29
申请号：US11939030
申请日：2007-11-13
申请人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
发明人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
IPC分类号： G03F1/00 , G03F7/20 , G03F7/26
CPC分类号： G03F1/62 , G03F7/70158 , G03F7/70191
摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle ↓(0°
摘要翻译：光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护掩模基板的防护薄膜组件，其中防护薄膜组件使入射角↓（0°<90°）的入射光的透射率高于入射角0°的入射光的透射率。

15. 发明授权

US07960075B2 Photomask unit, exposing method and method for manufacturing semiconductor device 有权
标题翻译：光掩模单元，制造半导体器件的曝光方法和方法
公开(公告)号：US07960075B2
公开(公告)日：2011-06-14
申请号：US11939030
申请日：2007-11-13
申请人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
发明人： Satoshi Nagai , Kazuya Fukuhara , Masamitsu Itoh , Kenji Kawano , Satoshi Tanaka
IPC分类号： G03F1/00 , G02B5/08
CPC分类号： G03F1/62 , G03F7/70158 , G03F7/70191
摘要： A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle θ (0°
摘要翻译：光掩模单元包括具有以间距P布置的图案的掩模基板; 以及保护所述掩模基板的防护薄膜组件，其中，所述防护薄膜组件使得入射角的入射光的透射率; （0°<θ; <90°）高于入射角0°的入射光的透射率。

16. 发明申请

US20120250011A1 PATTERN VERIFICATION-TEST METHOD, OPTICAL IMAGE INTENSITY DISTRIBUTION ACQUISITION METHOD, AND COMPUTER PROGRAM 有权
标题翻译：模式验证测试方法，光学图像强度分配获取方法和计算机程序
公开(公告)号：US20120250011A1
公开(公告)日：2012-10-04
申请号：US13491639
申请日：2012-06-08
申请人： Masamitsu Itoh , Satoshi Tanaka
发明人： Masamitsu Itoh , Satoshi Tanaka
IPC分类号： G01N21/01
CPC分类号： G03F1/86
摘要： A pattern verification-test method according to an embodiment of the present invention includes: deriving an illumination condition at a verification-test subject position in a photomask surface of a mask pattern as a verification or a test subject based on the verification-test subject position and illumination condition information about a distribution of an illumination condition in a photomask surface of exposure light incident on the mask pattern, performing lithography simulation on the mask pattern based on the derived illumination condition and the mask pattern, and verifying or testing the mask pattern based on a result of the lithography simulation.
摘要翻译：根据本发明的实施例的图案验证测试方法包括：基于验证测试对象位置，在掩模图案的光掩模表面中的验证测试对象位置处作为验证或测试对象导出照明条件以及关于入射到掩模图案的曝光光的光掩模表面中的照明条件的分布的照明条件信息，基于导出的照明条件和掩模图案对掩模图案进行光刻模拟，以及基于掩模图案的验证或测试在光刻模拟的结果。

17. 发明授权

US08219942B2 Pattern verification-test method, optical image intensity distribution acquisition method, and computer program 有权
标题翻译：模式验证测试方法，光学图像强度分布采集方法和计算机程序
公开(公告)号：US08219942B2
公开(公告)日：2012-07-10
申请号：US12487554
申请日：2009-06-18
申请人： Masamitsu Itoh , Satoshi Tanaka
发明人： Masamitsu Itoh , Satoshi Tanaka
IPC分类号： G06F17/50
CPC分类号： G03F1/86
摘要： A pattern verification-test method according to an embodiment of the present invention includes: deriving an illumination condition at a verification-test subject position in a photomask surface of a mask pattern as a verification or a test subject based on the verification-test subject position and illumination condition information about a distribution of an illumination condition in a photomask surface of exposure light incident on the mask pattern, performing lithography simulation on the mask pattern based on the derived illumination condition and the mask pattern, and verifying or testing the mask pattern based on a result of the lithography simulation.
摘要翻译：根据本发明的实施例的图案验证测试方法包括：基于验证测试对象位置，在掩模图案的光掩模表面中的验证测试对象位置处作为验证或测试对象导出照明条件以及关于入射到掩模图案的曝光光的光掩模表面中的照明条件的分布的照明条件信息，基于导出的照明条件和掩模图案对掩模图案进行光刻模拟，以及基于掩模图案的验证或测试在光刻模拟的结果。

18. 发明授权

US08533634B2 Exposure mask manufacturing method, drawing apparatus, semiconductor device manufacturing method, and mask blanks product 有权
标题翻译：曝光掩模制造方法，绘图装置，半导体器件制造方法和掩模毛坯产品
公开(公告)号：US08533634B2
公开(公告)日：2013-09-10
申请号：US12659396
申请日：2010-03-08
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： G06F17/50 , G03F1/00 , H01L21/00 , H01L21/20 , H01L21/311
CPC分类号： G03F1/70
摘要： A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction, data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.
摘要翻译：制造曝光掩模的方法包括：生成或准备与待处理的掩模坯料基板相关的平坦度变化数据为曝光掩模，平坦度变化数据是与掩模坯料基板由曝光装置的卡盘单元夹持，基于平坦度变化数据产生位置校正，要在掩模毛坯基板上绘制的图案的数据，使得曝光掩模的掩模图案在状态下到达预定位置曝光掩模由卡盘单元卡住，并且在掩模坯料基板上绘制图案，绘制包括绘制图案的图案，校正图案的绘图位置并输入与图案相对应的绘图数据和位置校正数据成为绘图装置。

19. 发明授权

US08465907B2 Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server 有权
公开(公告)号：US08465907B2
公开(公告)日：2013-06-18
申请号：US13525712
申请日：2012-06-18
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： G03F7/26
CPC分类号： G03F7/707 , G03F1/60 , G03F7/703 , G03F7/70433 , G03F7/70783 , Y10S438/975
摘要： There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.

20. 发明授权

US08407628B2 Photomask manufacturing method and semiconductor device manufacturing method 有权
公开(公告)号：US08407628B2
公开(公告)日：2013-03-26
申请号：US12770062
申请日：2010-04-29
申请人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
发明人： Masamitsu Itoh , Takashi Hirano , Kazuya Fukuhara
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/50
摘要： This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.

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