专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20070031108A1 Method for fabrication of optical element, and optical element having three-dimensional laminated structure 失效
公开(公告)号：US20070031108A1
公开(公告)日：2007-02-08
申请号：US10571696
申请日：2004-11-08
申请人： Mitsuro Sugita , Takao Yonehara
发明人： Mitsuro Sugita , Takao Yonehara
IPC分类号： G02B6/00
CPC分类号： B82Y20/00 , G02B6/12 , G02B6/12002 , G02B6/1225 , G02B6/13 , G02B6/136 , G02B6/14
摘要： A method for production of an optical element includes preparing a first member having formed on the surface of a first substrate 101 a first layer 103 by at least one of epitaxial growth and pore-making (micropore-making) and a second member having a porous layer for layer separation formed on a second substrate 104 and having formed thereon a second layer by at least one of epitaxial growth and pore-making (micropore-making), bonding the first layer 103 and the second layer, separating the second substrate 104 and the second layer of the second member from each other at the porous layer for layer separation in the second member, to form a laminated structure on the first substrate 101, forming a refraction index distribution pattern produced by a difference in refraction index in the plane of at least one of the first layer 103 and the second layer.

12. 发明授权

US06746559B2 Method and apparatus for separating composite member using fluid 有权
公开(公告)号：US06746559B2
公开(公告)日：2004-06-08
申请号：US10202022
申请日：2002-07-25
申请人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： B32B3500
CPC分类号： H01L21/67092 , H01L21/6838 , Y10T29/49821 , Y10T83/364 , Y10T156/1137 , Y10T156/1374 , Y10T156/1922 , Y10T156/1933 , Y10T156/1939
摘要： To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.

13. 发明授权

US06656271B2 Method of manufacturing semiconductor wafer method of using and utilizing the same 失效
标题翻译：使用和利用半导体晶片方法的方法
公开(公告)号：US06656271B2
公开(公告)日：2003-12-02
申请号：US09453539
申请日：1999-12-03
申请人： Takao Yonehara , Kunio Watanabe , Tetsuya Shimada , Kazuaki Ohmi , Kiyofumi Sakaguchi
发明人： Takao Yonehara , Kunio Watanabe , Tetsuya Shimada , Kazuaki Ohmi , Kiyofumi Sakaguchi
IPC分类号： C30B2518
CPC分类号： H01L21/76251 , H01L21/76259 , Y10S117/913
摘要： A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members.
摘要翻译：一种半导体晶片的制造方法，其具有优异的批量生产和再现性的适用性。该方法包括以下步骤：在半导体衬底上制备具有单晶半导体层的第一构件，其间分隔层以半导体晶片为原料，将单晶半导体层转移到第二构件上，该第二构件包括半导体晶片通过分离层分离单晶半导体层，并且在转印步骤之后使半导体衬底的表面平滑，以便用作除了形成第一和第二构件之外的目的的半导体晶片。

14. 发明授权

US06468923B1 Method of producing semiconductor member 失效
标题翻译：半导体部件的制造方法
公开(公告)号：US06468923B1
公开(公告)日：2002-10-22
申请号：US09534340
申请日：2000-03-24
申请人： Takao Yonehara , Kunio Watanabe , Tetsuya Shimada , Kazuaki Ohmi , Kiyofumi Sakaguchi
发明人： Takao Yonehara , Kunio Watanabe , Tetsuya Shimada , Kazuaki Ohmi , Kiyofumi Sakaguchi
IPC分类号： H01L2131
CPC分类号： H01L21/0203 , C25D11/32 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H01L21/76254 , H01L21/76259
摘要： A method of producing a semiconductor member comprises a first step of preparing a first member having a non-porous layer on a semiconductor substrate, and a second step of transferring the non-porous layer from the first member onto a second member, wherein use of the semiconductor substrate from which the non-porous layer is separated in the second step as a constituent material of the first member in the first step is conducted (n−1) times (“n” is a natural number not less than 2), the first and second steps are repeated n times, the semiconductor substrate is separated in n-th use in the second step and the separated semiconductor substrate is used for an use other than that of the first and second steps.
摘要翻译：制造半导体构件的方法包括：在半导体衬底上制备具有无孔层的第一构件的第一步骤和将第一构件的无孔层转移到第二构件上的第二步骤，其中使用进行第一步骤中作为第一部件的构成材料的第二步骤中的无孔层从其分离的半导体衬底（n-1）次（“n”是不小于2的自然数），第一步骤和第二步骤重复n次，在第二步骤中第n次使用半导体衬底被分离，并且分离的半导体衬底用于除了第一和第二步骤之外的用途。

15. 发明授权

US07077901B2 Process for producing single crystal silicon wafers 失效
标题翻译：制造单晶硅片的工艺
公开(公告)号：US07077901B2
公开(公告)日：2006-07-18
申请号：US10402214
申请日：2003-03-31
申请人： Katsumi Nakagawa , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida
发明人： Katsumi Nakagawa , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida
IPC分类号： C30B19/02
CPC分类号： C30B19/12 , C30B19/02 , C30B29/06
摘要： A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.
摘要翻译：一种制造单晶硅晶片的方法，包括以下步骤：在单晶硅衬底上形成多孔层，该单晶硅衬底包含平均浓度为28％硅同位素的硅的浓度小于92.5％的硅; 将其质量数为28的硅同位素的质量数大于98％的起始硅溶解在用于液相外延的熔体中，直到所述起始硅在所述熔体中在还原气氛保持在高温下变为过饱和状态为止温度：将所述单晶硅衬底浸入所述熔体中以在所述单晶硅衬底的所述多孔层的表面上生长单晶硅层; 以及从所述多孔层的一部分剥离所述单晶硅层。

16. 发明授权

US06609446B1 Separating apparatus, separating method, and method of manufacturing semiconductor substrate 失效
标题翻译：分离装置，分离方法和制造半导体衬底的方法
公开(公告)号：US06609446B1
公开(公告)日：2003-08-26
申请号：US09495847
申请日：2000-02-01
申请人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita , Hirokazu Kurisu
发明人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita , Hirokazu Kurisu
IPC分类号： B23B2710
CPC分类号： H01L21/67092 , H01L21/76259 , Y10T82/16 , Y10T82/16016 , Y10T82/16065
摘要： When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).
摘要翻译：当在多晶层上形成单晶Si层的第一衬底与第二衬底之间形成绝缘层而制备的键合衬底叠层在多孔可以防止分离的基板的周边部分的层，锯齿状缺陷。从喷嘴（112）喷射流体并将其注入到键合衬底叠层（30）的多孔层中，同时使键合衬底叠层（30）绕轴线（C）沿方向（R）旋转，从而将键合衬底叠层（30）在多孔层上形成两个衬底。当键合衬底叠层（30）的周边部分被分离时，喷嘴（112）位于范围（B）内。

17. 发明授权

US06391743B1 Method and apparatus for producing photoelectric conversion device 失效
标题翻译：光电转换装置的制造方法及装置
公开(公告)号：US06391743B1
公开(公告)日：2002-05-21
申请号：US09401775
申请日：1999-09-22
申请人： Masaaki Iwane , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Masaaki Iwane , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： H01L2130
CPC分类号： H01L31/072 , H01L21/67092 , H01L21/76254 , H01L2221/68363 , Y02E10/50
摘要： There is disclosed a method of producing a photoelectric conversion device comprising the steps of forming a semiconductor substrate comprising a first and a second semiconductor layers with a separation layer therebetween; bonding a support substrate to a surface of the second semiconductor layer opposite to the separation-layer-side surface to form a bonded substrate; separating the first and the second semiconductor layers by the separation layer; and producing a photoelectric conversion device in the second semiconductor layer, wherein when bonding the semiconductor substrate and the support substrate to each other, at least a portion is formed in the bonded substrate in which at least a part of end portions of the semiconductor substrate and the support substrate is not bonded to the other substrate and a fluid is jetted against a side surface of the bonded substrate, thereby separating the first and the second semiconductor layers. The method makes it possible to separate a bonded substrate with a high yield, thereby supplying photoelectric conversion devices with a high quality at a low production cost.
摘要翻译：公开了一种制造光电转换装置的方法，包括以下步骤：形成包括第一和第二半导体层的半导体衬底，其间具有分离层; 将支撑基板接合到与分离层侧表面相对的第二半导体层的表面，以形成键合衬底; 通过分离层分离第一和第二半导体层; 以及在所述第二半导体层中制造光电转换器件，其中当将所述半导体衬底和所述支撑衬底彼此接合时，至少一部分形成在所述键合衬底中，其中所述半导体衬底和所述支撑衬底的至少一部分端部和支撑基板不与另一个基板接合，并且流体相对于键合衬底的侧表面喷射，从而分离第一和第二半导体层。该方法可以以高产率分离粘合的基片，从而以低的生产成本提供高质量的光电转换装置。

18. 发明授权

US06605518B1 Method of separating composite member and process for producing thin film 失效
标题翻译：分离复合材料的方法和制备薄膜的方法
公开(公告)号：US06605518B1
公开(公告)日：2003-08-12
申请号：US09558657
申请日：2000-04-26
申请人： Kazuaki Ohmi , Katsumi Nakagawa , Nobuhiko Sato , Kiyofumi Sakaguchi , Kazutaka Yanagita , Takao Yonehara
发明人： Kazuaki Ohmi , Katsumi Nakagawa , Nobuhiko Sato , Kiyofumi Sakaguchi , Kazutaka Yanagita , Takao Yonehara
IPC分类号： H01L2146
CPC分类号： H01L21/76259 , Y10S438/96
摘要： To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane stress has concentratedly been produced to an extent that does not cause separation by the in-plane stress, and enlarging the in-plane stress to cause a crack in the stress riser layer, thereby separating the composite member.
摘要翻译：为了在分离层中的固定位置产生裂纹，分离复合构件的方法包括在复合构件内部形成分离层的步骤，在分离层的内部形成面内应力的应力提升层集中制造到不会由于面内应力而产生分离，扩大面内应力，引起应力提升层的裂纹，从而分离复合部件。

19. 发明授权

US06475323B1 Method and apparatus for separating composite member using fluid 有权
公开(公告)号：US06475323B1
公开(公告)日：2002-11-05
申请号：US09721816
申请日：2000-11-24
申请人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： B32B3500
CPC分类号： H01L21/67092 , H01L21/6838 , Y10T29/49821 , Y10T83/364 , Y10T156/1137 , Y10T156/1374 , Y10T156/1922 , Y10T156/1933 , Y10T156/1939
摘要： To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.

20. 发明授权

US06382292B1 Method and apparatus for separating composite member using fluid 失效
标题翻译：使用流体分离复合构件的方法和装置
公开(公告)号：US06382292B1
公开(公告)日：2002-05-07
申请号：US09047327
申请日：1998-03-25
申请人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Kazuaki Ohmi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： B32B3500
CPC分类号： H01L21/67092 , H01L21/6838 , Y10T29/49821 , Y10T83/364 , Y10T156/1137 , Y10T156/1374 , Y10T156/1922 , Y10T156/1933 , Y10T156/1939
摘要： To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.
摘要翻译：为了分离由多个结合构件组成的复合构件而不破坏或损坏复合构件，从喷嘴将流体喷射到复合构件上，以在与结合位置不同的位置处将其分离成多个构件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式