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    • 15. 发明授权
    • Method for using apparatus configured to form germanium-containing film
    • 使用配置成形成含锗膜的装置的方法
    • US08518488B2
    • 2013-08-27
    • US12707193
    • 2010-02-17
    • Yoshikazu FurusawaMitsuhiro Okada
    • Yoshikazu FurusawaMitsuhiro Okada
    • C23C16/00H01L21/205
    • C23C16/4405C23C16/24C23C16/28Y02C20/30Y02P70/605
    • A method for using an apparatus configured to form a germanium-containing film includes performing a first film formation process for forming a first product film containing germanium by CVD on a product target object placed inside a reaction container, a first cleaning process for etching the film formation by-product, a second cleaning process for removing residual germanium from inside the reaction container, and a second film formation process for forming a second product film containing no germanium by CVD on a product target object placed inside the reaction container, in this order. The second cleaning process is performed by exhausting gas from inside the reaction container with no product target object placed therein, supplying a second cleaning gas containing an oxidizing gas and hydrogen gas into the reaction container, and heating an interior of the reaction container thereby activating the second cleaning gas.
    • 使用被配置为形成含锗膜的装置的方法包括:在反应容器内部的产品目标物体上进行用于通过CVD形成含有锗的第一产品膜的第一成膜工艺,用于蚀刻该膜的第一清洁工艺 形成副产物,用于从反应容器内部除去残留的锗的第二清洗方法,以及第二成膜方法,用于在反应容器内放置的产品目标物体上通过CVD形成不含锗的第二产品膜,按顺序 。 第二清洗处理是通过从反应容器内部排出不产生目标物的气体,向反应容器供给含有氧化性气体和氢气的第二清洗气体,加热反应容器的内部,从而使 第二次清洗气体。
    • 18. 发明申请
    • MICRO MECHANICAL RESONATOR
    • 微机械谐振器
    • US20100327993A1
    • 2010-12-30
    • US12918236
    • 2009-02-16
    • Akimasa TamanoMitsuhiro OkadaKenichiro Suzuki
    • Akimasa TamanoMitsuhiro OkadaKenichiro Suzuki
    • H03H9/125
    • H03H9/2436H03H3/0072H03H2009/02519
    • A micro mechanical resonator includes a high dielectric substrate, and a torsional vibrator having one end that is a fixed end fixed to high dielectric substrate, and having the other end that is a free end. The torsional vibrator has a substantially circular plate-like shape, has a lower surface serving as the fixed end fixed to the substrate, and has an upper surface serving as the free end that is not fixed. The torsional vibrator torsionally vibrates relative to an axis (torsional vibration axis) connecting the center of the circle of the end surface of the fixed end to the center of the circle of the end surface of the free end. In this way, a micro mechanical resonator can be implemented which can be manufactured readily and achieves a high Q factor.
    • 微机械谐振器包括高电介质基片和扭转振动器,其一端是固定在高介电基片上的固定端,另一端是自由端。 扭转振动器具有大致圆形的板状形状,具有固定在基板上的固定端部的下表面,并且具有作为未固定的自由端的上表面。 扭转振动器相对于将固定端的端面的圆的中心与自由端的端面的圆的中心连接的轴(扭转振动轴)扭转振动。 以这种方式,可以实现可以容易地制造并实现高Q因子的微机械谐振器。
    • 20. 发明授权
    • Method and apparatus for forming silicon nitride film
    • 用于形成氮化硅膜的方法和装置
    • US07427572B2
    • 2008-09-23
    • US11186892
    • 2005-07-22
    • Kazuhide HasebeMitsuhiro Okada
    • Kazuhide HasebeMitsuhiro Okada
    • H01L21/31
    • H01L21/0217C23C16/345C23C16/56H01L21/0228H01L21/0234H01L21/3185
    • A method for forming a silicon nitride film first deposits a silicon nitride film on a target substrate by CVD in a process field within a reaction container. This step is arranged to supply a first process gas containing a silane family gas and a second process gas containing a nitriding gas to the process field, and set the process field at a first temperature and a first pressure, for a first time period. The method then nitrides a surface of the silicon nitride film in the process field. This step is arranged to supply a surface-treatment gas containing a nitriding gas to the process field without supplying the first process gas, and set the process field at a second temperature and a second pressure, for a second time period shorter than the first time period.
    • 用于形成氮化硅膜的方法首先在反应容器内的工艺场中通过CVD沉积目标衬底上的氮化硅膜。 该步骤被布置成将含有硅烷族气体的第一工艺气体和含有氮化气体的第二工艺气体供应到工艺现场,并将工艺场设置在第一温度和第一压力下,持续第一时间段。 该方法然后在工艺领域中氮化氮化硅膜的表面。 该步骤被布置成在不提供第一处理气体的情况下将含有氮化气体的表面处理气体供给到处理场,并将处理场设置在第二温度和第二压力下,比第一次短 期。