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11. 发明申请

US20060104105A1 METHOD OF DETERMINING OPTIMAL VOLTAGES FOR OPERATING TWO-SIDE NON-VOLATILE MEMORY AND THE OPERATING METHODS 有权
标题翻译：确定用于操作两侧非易失性存储器的最佳电压的方法和操作方法
公开(公告)号：US20060104105A1
公开(公告)日：2006-05-18
申请号：US10991537
申请日：2004-11-17
申请人： Tzu-Hsuan Hsu , Ming-Hsiu Lee , Chao-I Wu , Hsiang-Lan Lung
发明人： Tzu-Hsuan Hsu , Ming-Hsiu Lee , Chao-I Wu , Hsiang-Lan Lung
IPC分类号： G11C17/00
CPC分类号： G11C16/12 , G11C16/0475 , G11C16/26
摘要： A method of determining an optimal reading voltage for reading a two-side non-volatile memory programmed with a threshold voltage Vt is described. A first side of a memory cell is programmed to Vt, and then an I1-Vg curve of the first side and an I2-Vg curve of the second side are measured, wherein Vg is the gate voltage. A Gm1-Vg curve and a Gm2-Vg curve are plotted, wherein Gm1=dI1/dVg and Gm2=dI2/dVg. The optimal reading voltage VgO is determined as the gate voltage at the intersection of Gm1 and Gm2, corresponding to a maximal total current window Wm(=I2(VgO)−I1(VgO)).
摘要翻译：描述了一种确定用于读取用阈值电压Vt编程的双侧非易失性存储器的最佳读取电压的方法。存储器单元的第一侧被编程为Vt，然后第二侧的I 1 -T 1 -V G曲线和第二侧的I 2 -V -V曲线是测量，其中Vg是栅极电压。绘制了一个Gm 1-ΔVg曲线和一个Gm 2 -V -G曲线，其中G m 1 = 1/1 / / dVg和Gm2 = dI2 / dVg。确定最佳读取电压V g O O N作为在最大总电流窗口Gm1和Gm2的交点处的栅极电压 Wm（= I 2）（V g O O） - I 1（V g O O））。

12. 发明申请

US20050237816A1 Operation scheme for spectrum shift in charge trapping non-volatile memory 有权
标题翻译：电荷捕获非易失性存储器频谱移位操作方案
公开(公告)号：US20050237816A1
公开(公告)日：2005-10-27
申请号：US10876378
申请日：2004-06-24
申请人： Hang-Ting Lue , Yen-Hao Shih , Kuang Yeu Hsieh , Ming-Hsiu Lee , Chao-I Wu , Tzu-Hsuan Hsu
发明人： Hang-Ting Lue , Yen-Hao Shih , Kuang Yeu Hsieh , Ming-Hsiu Lee , Chao-I Wu , Tzu-Hsuan Hsu
IPC分类号： G11C11/36 , G11C16/04 , G11C16/34
CPC分类号： G11C16/3481 , G11C16/0466 , G11C16/3436
摘要： A memory cell with a charge trapping structure is programmed using refill cycles that include a program pulse followed by a charge balancing pulse that causes ejection of electrons from the charge trapping structure. The refill cycle causes a blue spectrum shift in the charge trap distribution in the charge trapping structure. The algorithm includes program verify operations after the program pulse, and completes when a successful program verify operation occurs after a number of refill cycles.
摘要翻译：具有电荷俘获结构的存储单元使用包括编程脉冲，随后是电荷平衡脉冲的再填充循环被编程，该电荷平衡脉冲引起电荷从电荷捕获结构的喷出。充电周期引起电荷捕获结构中电荷陷阱分布的蓝色光谱偏移。该算法包括在程序脉冲之后的程序验证操作，并且在多个填充循环之后发生成功的程序验证操作时完成。

13. 发明授权

US07773430B2 Method of identifying logical information in a programming and erasing cell by on-side reading scheme 有权
标题翻译：通过旁路读取方案识别编程和擦除单元中的逻辑信息的方法
公开(公告)号：US07773430B2
公开(公告)日：2010-08-10
申请号：US12314881
申请日：2008-12-18
申请人： Chao-I Wu , Ming-Hsiu Lee , Tzu-Hsuan Hsu
发明人： Chao-I Wu , Ming-Hsiu Lee , Tzu-Hsuan Hsu
IPC分类号： G11C11/34
CPC分类号： G11C16/0475
摘要： A method of identifying logical information in a cell, particularly in a programming by hot hole injection nitride electron storage (PHINES) cell by one-side reading scheme is disclosed. The method comprise steps of: erasing the first region and the second region of PHINES cell by increasing a local threshold voltage (Vt) to a certain value; programming at least one of the first region and the second region of the PHINES cell by hot hole injection; and reading a logical state of the PHINES cell by measuring an output current of one of the first region and the second region; wherein different quantity of the output current is caused by interaction between different quantity of the hot hole stored in the first region and the second region, so as to determine the logical state of the PHINES cell by one-side reading scheme.
摘要翻译：公开了一种识别单元中的逻辑信息的方法，特别是在通过单孔读取方案通过热空穴注入氮化物电子存储（PHINES）单元编程中的方法。该方法包括以下步骤：通过将局部阈值电压（Vt）增加到一定值来擦除PHINES单元的第一区域和第二区域; 通过热空穴注入来编程PHINES单元的第一区域和第二区域中的至少一个; 以及通过测量所述第一区域和所述第二区域之一的输出电流来读取所述PHINES单元的逻辑状态; 其中，通过存储在第一区域和第二区域中的不同量的热孔之间的相互作用引起不同量的输出电流，以便通过单面读取方案确定PHINES单元的逻辑状态。

14. 发明授权

US07608886B2 Systems and methods for a high density, compact memory array 有权
标题翻译：用于高密度，紧凑型存储器阵列的系统和方法
公开(公告)号：US07608886B2
公开(公告)日：2009-10-27
申请号：US11327792
申请日：2006-01-06
申请人： Tzu-Hsuan Hsu , Ming-Hsiu Lee , Chao-I Wu , Ming-Chang Kuo
发明人： Tzu-Hsuan Hsu , Ming-Hsiu Lee , Chao-I Wu , Ming-Chang Kuo
IPC分类号： H01L29/792
CPC分类号： H01L27/115 , G11C16/0475 , H01L27/11568 , H01L29/66833 , H01L29/792 , H01L29/7926
摘要： A memory array comprising vertical memory cells does not require any isolation layers between cells. Thus, a very compact, high density memory array can be achieved. Each memory cell in the memory array is configured to store 4 bits of data per cell. Multi level charge techniques can be used to increase the number of bit per cell and achieve further increased density for the memory array.
摘要翻译：包括垂直存储单元的存储器阵列不需要单元之间的任何隔离层。因此，可以实现非常紧凑，高密度的存储器阵列。存储器阵列中的每个存储单元被配置为存储每个单元的4位数据。可以使用多电平充电技术来增加每个电池的位数，并实现更高密度的存储器阵列。

15. 发明授权

US07342264B2 Memory cell and method for manufacturing the same 有权
标题翻译：存储单元及其制造方法
公开(公告)号：US07342264B2
公开(公告)日：2008-03-11
申请号：US11302738
申请日：2005-12-13
申请人： Tzu-Hsuan Hsu , Chao-I Wu , Ming-Hsiu Lee
发明人： Tzu-Hsuan Hsu , Chao-I Wu , Ming-Hsiu Lee
IPC分类号： H01L29/80 , H01L29/76
CPC分类号： H01L21/28282 , H01L29/4234 , H01L29/66833 , H01L29/7851 , H01L29/7853 , H01L29/7923
摘要： The invention is directed to a memory cell on a substrate having a plurality of shallow trench isolations form therein, wherein top surfaces of the shallow trench isolations are lower than a top surface of the substrate and the shallow trench isolations together define a vertical fin structure of the substrate. The memory cell comprises a straddle gate, a carrier trapping structure and at least two source/drain regions. The straddle gate is located on the substrate and straddles over the vertical fin structure. The carrier trapping structure is located between the straddle gate and the substrate, wherein the carrier trapping structure comprises a trapping layer directly in contact with the straddle gate and a tunnel layer located between the trapping layer and the substrate. The source/drain regions are located in a portion of the vertical fin structure of the substrate exposed by the straddle gate.
摘要翻译：本发明涉及在其上形成有多个浅沟槽隔离物的衬底上的存储单元，其中浅沟槽隔离物的顶表面低于衬底的顶表面，并且浅沟槽隔离件一起限定垂直鳍状结构底物。存储单元包括跨门，载流子俘获结构和至少两个源/漏区。跨门位于基板上，跨越垂直翅片结构。载体捕获结构位于跨门和衬底之间，其中载流子俘获结构包括直接与跨骑门接触的捕获层和位于俘获层和基底之间的隧道层。源极/漏极区域位于由跨门暴露的衬底的垂直鳍结构的一部分中。

16. 发明申请

US20070132000A1 Memory cell and method for manufacturing the same 有权
标题翻译：存储单元及其制造方法
公开(公告)号：US20070132000A1
公开(公告)日：2007-06-14
申请号：US11302738
申请日：2005-12-13
申请人： Tzu-Hsuan Hsu , Chao-I Wu , Ming-Hsiu Lee
发明人： Tzu-Hsuan Hsu , Chao-I Wu , Ming-Hsiu Lee
IPC分类号： H01L29/788
CPC分类号： H01L21/28282 , H01L29/4234 , H01L29/66833 , H01L29/7851 , H01L29/7853 , H01L29/7923
摘要： The invention is directed to a memory cell on a substrate having a plurality of shallow trench isolations form therein, wherein top surfaces of the shallow trench isolations are lower than a top surface of the substrate and the shallow trench isolations together define a vertical fin structure of the substrate. The memory cell comprises a straddle gate, a carrier trapping structure and at least two source/drain regions. The straddle gate is located on the substrate and straddles over the vertical fin structure. The carrier trapping structure is located between the straddle gate and the substrate, wherein the carrier trapping structure comprises a trapping layer directly in contact with the straddle gate and a tunnel layer located between the trapping layer and the substrate. The source/drain regions are located in a portion of the vertical fin structure of the substrate exposed by the straddle gate.
摘要翻译：本发明涉及在其上形成有多个浅沟槽隔离物的衬底上的存储单元，其中浅沟槽隔离物的顶表面低于衬底的顶表面，并且浅沟槽隔离件一起限定垂直鳍状结构底物。存储单元包括跨门，载流子俘获结构和至少两个源/漏区。跨门位于基板上，跨越垂直翅片结构。载体捕获结构位于跨门和衬底之间，其中载流子俘获结构包括直接与跨骑门接触的捕获层和位于俘获层和基底之间的隧道层。源极/漏极区域位于由跨门暴露的衬底的垂直鳍结构的一部分中。

17. 发明授权

US07038928B1 Method of determining optimal voltages for operating two-side non-volatile memory and the operating methods 有权
标题翻译：确定操作双侧非易失性存储器的最佳电压的方法和操作方法
公开(公告)号：US07038928B1
公开(公告)日：2006-05-02
申请号：US10991537
申请日：2004-11-17
申请人： Tzu-Hsuan Hsu , Ming-Hsiu Lee , Chao-I Wu , Hsiang-Lan Lung
发明人： Tzu-Hsuan Hsu , Ming-Hsiu Lee , Chao-I Wu , Hsiang-Lan Lung
IPC分类号： G11C17/00
CPC分类号： G11C16/12 , G11C16/0475 , G11C16/26
摘要： A method of determining an optimal reading voltage for reading a two-side non-volatile memory programmed with a threshold voltage Vt is described. A first side of a memory cell is programmed to Vt, and then an I1-Vg curve of the first side and an I2-Vg curve of the second side are measured, wherein Vg is the gate voltage. A Gm1-Vg curve and a Gm2-Vg curve are plotted, wherein Gm1=dI1/dVg and Gm2=dI2/dVg. The optimal reading voltage VgO is determined as the gate voltage at the intersection of Gm1 and Gm2, corresponding to a maximal total current window Wm (=I2(VgO)−I1(VgO)).
摘要翻译：描述了一种确定用于读取用阈值电压Vt编程的双侧非易失性存储器的最佳读取电压的方法。存储器单元的第一侧被编程为Vt，然后第二侧的I 1 -T 1 -V G曲线和第二侧的I 2 -V -V曲线是测量，其中Vg是栅极电压。绘制了一个Gm 1-ΔVg曲线和一个Gm 2 -V -G曲线，其中G m 1 = 1/1 / / dVg和Gm2 = dI2 / dVg。确定最佳读取电压V g O O N作为在最大总电流窗口Gm1和Gm2的交点处的栅极电压 Wm（= I 2）（V g O O） - I 1（V g O O））。

18. 发明申请

US20100009504A1 SYSTEMS AND METHODS FOR A HIGH DENSITY, COMPACT MEMORY ARRAY 有权
标题翻译：高密度，紧密记忆阵列的系统和方法
公开(公告)号：US20100009504A1
公开(公告)日：2010-01-14
申请号：US12561395
申请日：2009-09-17
申请人： Tzu-Hsuan Hsu , Ming-Hsiu Lee , Chao-I Wu , Ming-Chang Kuo
发明人： Tzu-Hsuan Hsu , Ming-Hsiu Lee , Chao-I Wu , Ming-Chang Kuo
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , G11C16/0475 , H01L27/11568 , H01L29/66833 , H01L29/792 , H01L29/7926
摘要： A memory array comprising vertical memory cells does not require any isolation layers between cells. Thus, a very compact, high density memory array can be achieved. Each memory cell in the memory array is configured to store 4 bits of data per cell. Multi-level charge techniques can be used to increase the number of bit per cell and achieve further increased density for the memory array.
摘要翻译：包括垂直存储单元的存储器阵列不需要单元之间的任何隔离层。因此，可以实现非常紧凑，高密度的存储器阵列。存储器阵列中的每个存储单元被配置为存储每个单元的4位数据。可以使用多电平充电技术来增加每个单元的位数，并实现对存储器阵列的进一步增加的密度。

19. 发明授权

US07085168B2 Programming method for controlling memory threshold voltage distribution 有权
标题翻译：用于控制存储器阈值电压分布的编程方法
公开(公告)号：US07085168B2
公开(公告)日：2006-08-01
申请号：US11026799
申请日：2004-12-30
申请人： Ming-Hsiu Lee , Chao-I Wu , Tzu-Hsuan Hsu
发明人： Ming-Hsiu Lee , Chao-I Wu , Tzu-Hsuan Hsu
IPC分类号： G11C16/34
CPC分类号： G11C11/5671 , G11C16/0475 , G11C16/12 , G11C16/3459 , G11C16/3481
摘要： A method for programming one or more memory cells is disclosed. The one or more memory cells need to be two sides operated. After verifying both sides of each memory cell to identify the sides of the memory cells to be programmed, a programming voltage pulse is given to the first sides of the memory cells identified to be programmed. Another verification process is performed for both sides of each memory cell to identify the sides of the memory cells to be programmed. Next, a programming voltage pulse is given to the second sides of the memory cells identified to be programmed. The verifying both sides, programming the first sides, verifying both sides, and programming the second sides will continue until the both sides of each memory cell are programmed to a target programming voltage. The target programming voltage might have multiple voltage levels.
摘要翻译：公开了一种用于编程一个或多个存储器单元的方法。一个或多个存储单元需要是双面操作的。在验证每个存储器单元的两侧以识别待编程的存储器单元的侧面之后，向被识别为被编程的存储器单元的第一侧提供编程电压脉冲。对每个存储单元的两侧执行另一个验证过程，以识别待编程的存储器单元的侧面。接下来，将编程电压脉冲提供给被识别为被编程的存储器单元的第二侧。验证两侧，编程第一面，验证双面，并对第二面进行编程将一直持续到每个存储单元的两侧都编程为目标编程电压。目标编程电压可能有多个电压电平。

20. 发明申请

US20050286312A1 Method of identifying logical information in a programming and erasing cell by on-side reading scheme 有权
标题翻译：通过旁路读取方案识别编程和擦除单元中的逻辑信息的方法
公开(公告)号：US20050286312A1
公开(公告)日：2005-12-29
申请号：US10873623
申请日：2004-06-23
申请人： Chao-I Wu , Ming-Hsiu Lee , Tzu-Hsuan Hsu
发明人： Chao-I Wu , Ming-Hsiu Lee , Tzu-Hsuan Hsu
IPC分类号： G11C16/04 , H01L21/8247
CPC分类号： G11C16/0475
摘要： A method of identifying logical information in a cell, particularly in a programming by hot hole injection nitride electron storage (PHINES) cell by one-side reading scheme is disclosed. The method comprise steps of: erasing the first region and the second region of PHINES cell by increasing a local threshold voltage (Vt) to a certain value; programming at least one of the first region and the second region of the PHINES cell by hot hole injection; and reading a logical state of the PHINES cell by measuring an output current of one of the first region and the second region; wherein different quantity of the output current is caused by interaction between different quantity of the hot hole stored in the first region and the second region, so as to determine the logical state of the PHINES cell by one-side reading scheme.
摘要翻译：公开了一种识别单元中的逻辑信息的方法，特别是在通过单孔读取方案通过热空穴注入氮化物电子存储（PHINES）单元编程中的方法。该方法包括以下步骤：通过将局部阈值电压（Vt）增加到一定值来擦除PHINES单元的第一区域和第二区域; 通过热空穴注入来编程PHINES单元的第一区域和第二区域中的至少一个; 以及通过测量所述第一区域和所述第二区域之一的输出电流来读取所述PHINES单元的逻辑状态; 其中，通过存储在第一区域和第二区域中的不同量的热孔之间的相互作用引起不同量的输出电流，以便通过单面读取方案确定PHINES单元的逻辑状态。

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