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    • 13. 发明授权
    • Apparatus and method for plating semiconductor wafers
    • 用于电镀半导体晶片的装置和方法
    • US07645364B2
    • 2010-01-12
    • US10882712
    • 2004-06-30
    • Yezdi N. DordiFred C. RedekerJohn M. BoydRobert MaraschinCarl Woods
    • Yezdi N. DordiFred C. RedekerJohn M. BoydRobert MaraschinCarl Woods
    • C25D21/00
    • C25D17/14C25D5/06C25D7/123C25D17/001C25D21/12H01L21/2885
    • An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
    • 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时,电镀头能够在晶片表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对,以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时,由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。
    • 14. 发明申请
    • Apparatus and method for plating semiconductor wafers
    • 用于电镀半导体晶片的装置和方法
    • US20080271992A1
    • 2008-11-06
    • US10882712
    • 2004-06-30
    • Yezdi N. DordiFred C. RedekerJohn M. BoydRobert MaraschinCarl Woods
    • Yezdi N. DordiFred C. RedekerJohn M. BoydRobert MaraschinCarl Woods
    • C25D17/00
    • C25D17/14C25D5/06C25D7/123C25D17/001C25D21/12H01L21/2885
    • An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
    • 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时,电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对,以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时,由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。
    • 15. 发明申请
    • Apparatus for Plating Semiconductor Wafers
    • 用于电镀半导体晶片的装置
    • US20090321250A1
    • 2009-12-31
    • US12554860
    • 2009-09-04
    • Yezdi N. DordiFred C. RedekerJohn M. BoydRobert MaraschinCarl Woods
    • Yezdi N. DordiFred C. RedekerJohn M. BoydRobert MaraschinCarl Woods
    • C25D21/12
    • C25D17/14C25D5/06C25D7/123C25D17/001C25D21/12H01L21/2885
    • An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
    • 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时,电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对,以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时,由电压传感器对接收的数据被控制器使用以保持由阳极施加的基本恒定的电压。 还提供了一种电镀晶片的方法。
    • 16. 发明授权
    • Apparatus for plating semiconductor wafers
    • 半导体晶片电镀设备
    • US07862693B2
    • 2011-01-04
    • US12554860
    • 2009-09-04
    • Yezdi N. DordiFred C. RedekerJohn M. BoydRobert MaraschinCarl Woods
    • Yezdi N. DordiFred C. RedekerJohn M. BoydRobert MaraschinCarl Woods
    • C25D21/12C25D19/00C25B15/00
    • C25D17/14C25D5/06C25D7/123C25D17/001C25D21/12H01L21/2885
    • An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
    • 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时,电镀头能够在晶片的表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对,以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时,由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。
    • 17. 发明授权
    • Proximity head with angled vacuum conduit system, apparatus and method
    • 接近头带有倾斜的真空管道系统,设备和方法
    • US07975708B2
    • 2011-07-12
    • US11731532
    • 2007-03-30
    • Michael RavkinJohn M. de LariosFred C. RedekerMikhail KorolikErik M. Freer
    • Michael RavkinJohn M. de LariosFred C. RedekerMikhail KorolikErik M. Freer
    • B08B3/00
    • H01L21/67051
    • A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region. The third conduits being formed at a first angle relative to the third flat region. The first angle being between 30 and 60 degrees. A system and method for processing a substrate with a proximity head is also described.
    • 包括头表面的接近头。 头表面包括第一平坦区域和多个第一管道。 多个第一导管中的每一个由多个第一离散孔中的对应的一个限定。 多个第一离散孔位于头表面并延伸穿过第一平坦区域。 头表面还包括第二平坦区域和多个第二管道。 多个第二导管由位于头表面中并延伸穿过第二平坦区域的相应多个第二离散孔限定。 头表面还包括设置在第一平坦区域和第二平坦区域之间并与之相邻的第三平坦区域和多个第三导管。 多个第三导管由位于头表面中并延伸穿过第三平坦区域的对应的多个第三离散孔限定。 第三导管相对于第三平坦区域以第一角度形成。 第一个角度在30到60度之间。 还描述了用于处理具有邻近头的衬底的系统和方法。