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11. 发明授权

US09177795B2 Methods of forming nanostructures including metal oxides 有权
标题翻译：形成纳米结构的方法，包括金属氧化物
公开(公告)号：US09177795B2
公开(公告)日：2015-11-03
申请号：US14040245
申请日：2013-09-27
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L21/302 , H01L21/027 , C08G81/00
CPC分类号： H01L21/0273 , B81C1/00031 , B81C2201/0149 , C08G81/00 , C08L53/005 , H01L21/02118 , H01L21/02175 , H01L21/02318 , H01L21/0332 , H01L21/0337 , H01L21/31058
摘要： A method of forming nanostructures may include forming a block copolymer composition within a trench in a material on a substrate, wherein the block copolymer composition may comprise a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the block copolymer composition into first domains comprising the first block and the activatable catalyst, and second domains comprising the second block; generating catalyst from the activatable catalyst in at least one portion of the first domains to produce a structure comprising catalyst-containing domains and the second domains, the catalyst-containing domains comprising the first block and the catalyst; and reacting a metal oxide precursor with the catalyst in the catalyst-containing domains to produce a metal oxide-containing structure comprising the first block and metal oxide.
摘要翻译：形成纳米结构的方法可以包括在衬底中的材料中的沟槽内形成嵌段共聚物组合物，其中嵌段共聚物组合物可以包含嵌段共聚物材料和对于嵌段共聚物材料的第一嵌段具有更高亲和力的可活化催化剂与第二嵌段共聚物材料相比; 将嵌段共聚物组合物自组装成包含第一嵌段和可活化催化剂的第一畴，以及包含第二嵌段的第二畴; 在第一区域的至少一部分中从可活化催化剂产生催化剂以产生包含含催化剂的区域和第二区域的结构，所述含催化剂的区域包含第一嵌段和催化剂; 并使金属氧化物前体与含催化剂的区域中的催化剂反应，以制备包含第一嵌段和金属氧化物的含金属氧化物的结构。

12. 发明申请

US20150091137A1 METHODS OF FORMING NANOSTRUCTURES INCLUDING METAL OXIDES AND SEMICONDUCTOR STRUCTURES INCLUDING SAME 有权
标题翻译：形成金属氧化物的纳米结构的方法和包括其中的半导体结构
公开(公告)号：US20150091137A1
公开(公告)日：2015-04-02
申请号：US14040245
申请日：2013-09-27
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L21/027 , C08G81/00
CPC分类号： H01L21/0273 , B81C1/00031 , B81C2201/0149 , C08G81/00 , C08L53/005 , H01L21/02118 , H01L21/02175 , H01L21/02318 , H01L21/0332 , H01L21/0337 , H01L21/31058
摘要： A method of forming nanostructures may include forming a block copolymer composition within a trench in a material on a substrate, wherein the block copolymer composition may comprise a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the block copolymer composition into first domains comprising the first block and the activatable catalyst, and second domains comprising the second block; generating catalyst from the activatable catalyst in at least one portion of the first domains to produce a structure comprising catalyst-containing domains and the second domains, the catalyst-containing domains comprising the first block and the catalyst; and reacting a metal oxide precursor with the catalyst in the catalyst-containing domains to produce a metal oxide-containing structure comprising the first block and metal oxide.
摘要翻译：形成纳米结构的方法可以包括在衬底中的材料中的沟槽内形成嵌段共聚物组合物，其中嵌段共聚物组合物可以包含嵌段共聚物材料和对于嵌段共聚物材料的第一嵌段具有更高亲和力的可活化催化剂与第二嵌段共聚物材料相比; 将嵌段共聚物组合物自组装成包含第一嵌段和可活化催化剂的第一畴，以及包含第二嵌段的第二畴; 在第一区域的至少一部分中从可活化催化剂产生催化剂以产生包含含催化剂的区域和第二区域的结构，所述含催化剂的区域包含第一嵌段和催化剂; 并使金属氧化物前体与含催化剂的区域中的催化剂反应，以制备包含第一嵌段和金属氧化物的含金属氧化物的结构。

13. 发明申请

US20140353803A1 SEMICONDUCTOR DEVICE STRUCTURES 有权
标题翻译：半导体器件结构
公开(公告)号：US20140353803A1
公开(公告)日：2014-12-04
申请号：US14457658
申请日：2014-08-12
申请人： Micron Technology, Inc.
发明人： Adam L. Olson , Kaveri Jain , Lijing Gou , William R. Brown , Ho Seop Eom , Xue Chen , Anton J. deVilliers
IPC分类号： H01L23/52
CPC分类号： H01L23/528 , H01L21/0226 , H01L21/0273 , H01L21/0274 , H01L21/3085 , H01L21/3086 , H01L21/441 , H01L21/467 , H01L21/76804 , H01L21/76816 , H01L21/76877 , H01L21/76885 , H01L23/52 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.
摘要翻译：公开了形成特征的方法。一种方法包括在衬底结构上的酸性或碱性材料池上形成抗蚀剂，选择性地将抗蚀剂暴露于能量源以形成暴露的抗蚀剂部分和未曝光的抗蚀剂部分，以及将酸性或碱性材料的酸或碱扩散从池中到抗蚀剂的近端部分。另一种方法包括在衬底结构中形成多个凹陷。多个凹部填充有包含酸或碱的池材料。在池材料上形成抗蚀剂，并且衬底结构和酸或碱扩散到抗蚀剂的相邻部分。抗蚀剂被图案化以在抗蚀剂中形成开口。开口包括远离衬底结构的较宽部分和靠近衬底结构的较窄部分。公开了包括这些特征的附加方法和半导体器件结构。

14. 发明授权

US11532477B2 Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof 有权
公开(公告)号：US11532477B2
公开(公告)日：2022-12-20
申请号：US16049329
申请日：2018-07-30
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L21/027 , C08G81/00 , H01L21/033 , H01L21/3105 , B81C1/00 , C08L53/00 , H01L21/02
摘要： A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

15. 发明申请

US20160307839A1 SEMICONDUCTOR DEVICE STRUCTURES 有权
标题翻译：半导体器件结构
公开(公告)号：US20160307839A1
公开(公告)日：2016-10-20
申请号：US15192060
申请日：2016-06-24
申请人： Micron Technology, Inc.
发明人： Adam L. Olson , Kaveri Jain , Lijing Gou , William R. Brown , Ho Seop Eom , Xue Chen , Anton J. deVilliers
IPC分类号： H01L23/528 , H01L21/308 , H01L21/768
CPC分类号： H01L23/528 , H01L21/0226 , H01L21/0273 , H01L21/0274 , H01L21/3085 , H01L21/3086 , H01L21/441 , H01L21/467 , H01L21/76804 , H01L21/76816 , H01L21/76877 , H01L21/76885 , H01L23/52 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.
摘要翻译：形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。该方法还可以包括在抗蚀剂的开口中形成特征。这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。

16. 发明授权

US09396996B2 Methods of forming openings in semiconductor structures 有权
标题翻译：在半导体结构中形成开口的方法
公开(公告)号：US09396996B2
公开(公告)日：2016-07-19
申请号：US14848912
申请日：2015-09-09
申请人： Micron Technology, Inc.
发明人： Adam L. Olson , Kaveri Jain , Lijing Gou , William R. Brown , Ho Seop Eom , Xue (Gloria) Chen , Anton J. deVilliers
IPC分类号： H01L21/31 , H01L21/469 , H01L21/768 , H01L21/467 , H01L23/52 , H01L21/027 , H01L21/02 , H01L21/308
CPC分类号： H01L23/528 , H01L21/0226 , H01L21/0273 , H01L21/0274 , H01L21/3085 , H01L21/3086 , H01L21/441 , H01L21/467 , H01L21/76804 , H01L21/76816 , H01L21/76877 , H01L21/76885 , H01L23/52 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.
摘要翻译：形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。该方法还可以包括在抗蚀剂的开口中形成特征。这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。

17. 发明申请

US20150380307A1 METHODS OF FORMING OPENINGS IN SEMICONDUCTOR STRUCTURES 有权
标题翻译：在半导体结构中形成开口的方法
公开(公告)号：US20150380307A1
公开(公告)日：2015-12-31
申请号：US14848912
申请日：2015-09-09
申请人： Micron Technology, Inc.
发明人： Adam L. Olson , Kaveri Jain , Lijing Gou , William R. Brown , Ho Seop Eom , Xue (Gloria) Chen , Anton J. deVilliers
IPC分类号： H01L21/768 , H01L21/308 , H01L21/02
CPC分类号： H01L23/528 , H01L21/0226 , H01L21/0273 , H01L21/0274 , H01L21/3085 , H01L21/3086 , H01L21/441 , H01L21/467 , H01L21/76804 , H01L21/76816 , H01L21/76877 , H01L21/76885 , H01L23/52 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.
摘要翻译：形成半导体结构的方法包括在衬底结构中形成酸性或碱性材料的集合体。在酸性或碱性材料和衬底结构的池之上形成抗蚀剂。酸性或碱性材料从池中扩散到靠近池的抗蚀剂的部分，而不是远离池的抗蚀剂的部分。然后，与远离池的抗蚀剂部分相比，抗蚀剂暴露于显影剂以除去更靠近池的抗蚀剂部分，以在抗蚀剂中形成开口。开口具有靠近基板结构的较宽部分和远离基板结构的较窄部分。该方法还可以包括在抗蚀剂的开口中形成特征。这些特征具有靠近基底结构的较宽部分和远离基底结构的较窄部分。

18. 发明申请

US20230116129A1 METHODS OF FORMING NANOSTRUCTURES INCLUDING METAL OXIDES USING BLOCK COPOLYMER MATERIALS 有权
公开(公告)号：US20230116129A1
公开(公告)日：2023-04-13
申请号：US18062495
申请日：2022-12-06
申请人： Micron Technology, Inc.
发明人： Nicholas Hendricks , Adam L. Olson , William R. Brown , Ho Seop Eom , Xue Chen , Kaveri Jain , Scott Schuldenfrei
IPC分类号： H01L21/027 , C08G81/00 , H01L21/033 , H01L21/3105 , B81C1/00 , C08L53/00 , H01L21/02
摘要： A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

19. 发明授权

US10522461B2 Semiconductor device structures 有权
公开(公告)号：US10522461B2
公开(公告)日：2019-12-31
申请号：US16042255
申请日：2018-07-23
申请人： Micron Technology, Inc.
发明人： Adam L. Olson , Kaveri Jain , Lijing Gou , William R. Brown , Ho Seop Eom , Xue (Gloria) Chen , Anton J. deVilliers
IPC分类号： H01L21/31 , H01L23/528 , H01L21/467 , H01L23/52 , H01L21/768 , H01L21/027 , H01L21/02 , H01L21/308
摘要： A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

20. 发明授权

US10032719B2 Semiconductor device structures 有权
公开(公告)号：US10032719B2
公开(公告)日：2018-07-24
申请号：US15606312
申请日：2017-05-26
申请人： Micron Technology, Inc.
发明人： Adam L. Olson , Kaveri Jain , Lijing Gou , William R. Brown , Ho Seop Eom , Xue (Gloria) Chen , Anton J. deVilliers
IPC分类号： H01L21/31 , H01L23/528 , H01L21/02 , H01L21/027 , H01L23/52 , H01L21/768 , H01L21/308 , H01L21/467
摘要： A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

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