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11. 发明授权

US09703203B2 Compositions and methods for pattern treatment 有权
公开(公告)号：US09703203B2
公开(公告)日：2017-07-11
申请号：US15172260
申请日：2016-06-03
申请人： Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： Vipul Jain , Mingqi Li , Huaxing Zhou , Jong Keun Park , Phillip D. Hustad , Jin Wuk Sung
IPC分类号： G03F7/11 , G03F7/40 , G03F7/004 , G03F7/20 , G03F7/16 , G03F7/00 , C08F293/00 , H01L21/027 , C09D153/00 , G03F7/039 , G03F7/32
CPC分类号： G03F7/405 , C08F293/00 , C09D153/00 , G03F7/002 , G03F7/0397 , G03F7/11 , G03F7/165 , G03F7/168 , G03F7/20 , G03F7/325 , G03F7/40 , H01L21/0274
摘要： Pattern treatment compositions comprise a block copolymer and an organic solvent. The block copolymer comprises a first block and a second block. The first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group. The second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group. Wherein: (i) the second block comprises a unit formed from a third monomer comprising an ethylenically unsaturated polymerizable group, and the second monomer and the third monomer are different; and/or (ii) the block copolymer comprises a third block comprising a unit formed from a fourth monomer comprising an ethylenically unsaturated polymerizable group, wherein the fourth monomer is different from the first monomer and the second monomer. Also provided are pattern treatment methods using the described compositions. The pattern treatment compositions and methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

12. 发明授权

US09671697B2 Pattern treatment methods 有权
公开(公告)号：US09671697B2
公开(公告)日：2017-06-06
申请号：US15172246
申请日：2016-06-03
申请人： Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： Huaxing Zhou , Mingqi Li , Vipul Jain , Jong Keun Park , Phillip D. Hustad , Jin Wuk Sung
IPC分类号： G03F7/004 , G03F7/11 , G03F7/40 , G03F7/00 , G03F7/16 , G03F7/20 , C09D153/00 , H01L21/027 , C08F293/00 , G03F7/039 , G03F7/32
CPC分类号： G03F7/405 , C08F293/00 , C09D153/00 , G03F7/002 , G03F7/0397 , G03F7/11 , G03F7/165 , G03F7/168 , G03F7/20 , G03F7/325 , G03F7/40 , H01L21/0274
摘要： Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

13. 发明申请

US20170045643A1 NANOSTRUCTURE MATERIAL METHODS AND DEVICES 有权
标题翻译：纳米结构材料的方法和装置
公开(公告)号：US20170045643A1
公开(公告)日：2017-02-16
申请号：US15066863
申请日：2016-03-10
申请人： The Board of Trustees of the University of Illinois , Rohm and Haas Electronic Materials, LLC , Dow Global Technologies LLC
发明人： Brian Cunningham , Gloria G. See , Peter Trefonas, III , Jieqian Zhang , Jong Keun Park , Kevin Howard , Kishori Deshpande , Trevor Ewers
IPC分类号： G02B1/08 , G02B27/28 , G02B5/30 , G02B1/04
CPC分类号： G02B1/08 , G02B1/04 , G02B5/1861 , G02B5/30 , G02B5/3025 , G02B27/28 , H01L33/58
摘要： In one aspect, structures are provided that comprise (a) a one-dimensional periodic plurality of layers, wherein at least two of the layers have a refractive index differential sufficient to provide effective contrast; and (b) one or more light-emitting nanostructure materials effectively positioned with respect to the refractive index differential interface, wherein the structure provides a polarized output emission.
摘要翻译：在一个方面，提供了包括（a）一维周期性多个层的结构，其中至少两层具有足以提供有效对比度的折射率差; 和（b）相对于折射率差分界面有效定位的一个或多个发光纳米结构材料，其中该结构提供偏振输出发射。

14. 发明授权

US09558987B2 Gap-fill methods 有权
标题翻译：间隙填充方法
公开(公告)号：US09558987B2
公开(公告)日：2017-01-31
申请号：US14582149
申请日：2014-12-23
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC , Rohm and Haas Electronic Materials Korea Ltd.
发明人： Jae Hwan Sim , Jin Hong Park , Jae-Bong Lim , Jung Kyu Jo , Cheng-Bai Xu , Jong Keun Park , Mingqi Li , Phillip D. Hustad
IPC分类号： H01L21/31 , H01L21/762 , H01L21/3105
CPC分类号： H01L21/76224 , H01L21/31058
摘要： Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently chosen from hydroxyl, carboxyl, thiol, amine, epoxy, alkoxy, amide and vinyl groups; and (c) heating the gap-fill composition at a temperature to cause the polymer to crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.
摘要翻译：间隙填充方法包括：（a）在衬底的表面上提供具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含非交联的可交联聚合物，酸催化剂，交联剂和溶剂，其中所述可交联聚合物包含以下通用物质的第一单元式（I）：其中：R 1选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且Ar1是不含可交联基团的任选取代的芳基; 和下列通式（II）的第二单元：其中：R 3选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且R 4选自任选取代的C 1至C 12直链，支链或环状烷基，以及任选含有杂原子的任选取代的C 6至C 15芳基，其中至少一个氢原子被独立地选自羟基，羧基，硫醇，胺，环氧，烷氧基，酰胺和乙烯基; 和（c）在一定温度下加热间隙填充组合物以使聚合物交联。该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

15. 发明申请

US20160365478A1 NANOSTRUCTURE MATERIAL STACK-TRANSFER METHODS AND DEVICES 审中-公开
标题翻译：纳米结构材料堆叠转移方法和装置
公开(公告)号：US20160365478A1
公开(公告)日：2016-12-15
申请号：US14577425
申请日：2014-12-19
申请人： The Board of Trustee of the University of Illinois , Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , John A. Rogers , Bong Hoon Kim , Sang Y. Yang , Peter Trefonas, III , Kishori Deshpande , Jaebum Joo , Jieqian J. Zhang , Jong Keun Park
IPC分类号： H01L33/00 , H01L33/08 , H01L33/06
CPC分类号： H01L33/0083 , H01L33/06 , H01L33/08
摘要： In one aspect, methods are provided for fabrication of multiple layers of a nanostructure material composite, and devices produced by such methods. In another aspect, methods are provided that include use of an overcoating fluoro-containing layer that can facilitate transfer of a nanostructure material layer, and devices produced by such methods.
摘要翻译：在一个方面，提供了用于制造多层纳米结构材料复合材料的方法，以及通过这些方法制备的装置。在另一方面，提供了包括使用可促进纳米结构材料层的转移的外涂层含氟层以及由这些方法制备的装置的方法。

16. 发明申请

US20160357112A1 COMPOSITIONS AND METHODS FOR PATTERN TREATMENT 有权
标题翻译：用于图案处理的组合物和方法
公开(公告)号：US20160357112A1
公开(公告)日：2016-12-08
申请号：US15172276
申请日：2016-06-03
申请人： Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： Vipul Jain , Mingqi Li , Huaxing Zhou , Jong Keun Park , Phillip D. Hustad , Jin Wuk Sung
IPC分类号： G03F7/40
CPC分类号： G03F7/11 , C08F293/00 , C09D153/00 , G03F7/002 , G03F7/0397 , G03F7/165 , G03F7/168 , G03F7/20 , G03F7/325 , G03F7/40 , G03F7/405 , H01L21/0274
摘要： Pattern treatment compositions comprise a block copolymer and an organic solvent. The block copolymer comprises a first block and a second block. The first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group. The second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene. Wherein: (i) the second block comprises a unit formed from a third monomer comprising an ethylenically unsaturated polymerizable group, and the second monomer and the third monomer are different; and/or (ii) the block copolymer comprises a third block comprising a unit formed from a fourth monomer comprising an ethylenically unsaturated polymerizable group. Also provided are pattern treatment methods using the described compositions. The pattern treatment compositions and methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
摘要翻译：图案处理组合物包含嵌段共聚物和有机溶剂。嵌段共聚物包括第一嵌段和第二嵌段。第一块包括由包含烯键式不饱和可聚合基团和氢受体基团的第一单体形成的单元，其中氢受体基团是含氮基团。第二块包括由包含烯键式不饱和可聚合基团和芳族基团的第二单体形成的单元，条件是第二单体不是苯乙烯。（i）第二块包含由包含烯键式不饱和可聚合基团的第三单体形成的单元，第二单体和第三单体不同; 和/或（ii）嵌段共聚物包括第三嵌段，其包含由包含烯属不饱和可聚合基团的第四单体形成的单元。还提供了使用所述组合物的图案处理方法。图案处理组合物和方法在用于提供高分辨率图案的半导体器件的制造中具有特别的适用性。

17. 发明申请

US20160357109A1 PATTERN TREATMENT METHODS 有权
标题翻译：模式处理方法
公开(公告)号：US20160357109A1
公开(公告)日：2016-12-08
申请号：US15172228
申请日：2016-06-03
申请人： Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： Vipul Jain , Mingqi Li , Huaxing Zhou , Jong Keun Park , Phillip D. Hustad , Jin Wuk Sung
IPC分类号： G03F7/40 , G03F7/38 , G03F7/32 , G03F7/20
CPC分类号： G03F7/165 , C08F293/00 , C09D153/00 , G03F7/002 , G03F7/0397 , G03F7/168 , G03F7/20 , G03F7/325 , G03F7/40 , G03F7/405 , H01L21/0274
摘要： Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that the second monomer is not styrene; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
摘要翻译：图案处理方法包括：（a）在其表面上提供包括图案化特征的半导体衬底; （b）将图案处理组合物施加到所述图案化特征，其中所述图案处理组合物包含嵌段共聚物和溶剂，其中所述嵌段共聚物包含第一嵌段和第二嵌段，其中所述第一嵌段包含由第一嵌段包含烯键式不饱和可聚合基团和氢受体基团的单体，其中所述氢受体基团是含氮基团，并且所述第二嵌段包含由包含烯属不饱和可聚合基团和芳族基团的第二单体形成的单元，条件是第二单体不是苯乙烯; 和（c）从基材漂洗残余图案处理组合物，使一部分嵌段共聚物结合到图案化特征。该方法在用于提供高分辨率图案的半导体器件的制造中具有特别的适用性。

18. 发明授权

US09464224B2 Transformative wavelength conversion medium 有权
标题翻译：变换波长转换介质
公开(公告)号：US09464224B2
公开(公告)日：2016-10-11
申请号：US14550265
申请日：2014-11-21
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Kishori Deshpande , Robert E. Hefner, Jr. , Peter Trefonas , Maurice J. Marks , Jong Keun Park , Jieqian Zhang
IPC分类号： H05B33/04 , C08L63/00 , C08K3/10 , C09K11/02 , H01L33/50
CPC分类号： C09K11/02 , C09K11/08 , H01L33/502 , Y02B20/181
摘要： A transformative wavelength conversion medium is provided, comprising: a phosphor; and, a curable liquid component, wherein the curable liquid component, comprises: an aliphatic resin component, wherein the aliphatic resin component has an average of two epoxide groups per molecule; and, a curing agent; wherein the curable liquid component contains less than 0.5 wt % of monoepoxide molecules (based on the total weight of the aliphatic resin component); and, wherein the curable liquid component is a liquid at 25° C. and atmospheric pressure; and, wherein the phosphor is dispersed in the curable liquid component.
摘要翻译：提供变换波长转换介质，包括：磷光体; 以及可固化液体组分，其中所述可固化液体组分包含：脂族树脂组分，其中所述脂族树脂组分每分子平均具有两个环氧基团; 和固化剂; 其中可固化液体组分含有小于0.5重量％的单环氧化物分子（基于脂族树脂组分的总重量）; 并且其中所述可固化液体组分在25℃和大气压下为液体; 并且其中所述荧光体分散在所述可固化液体组分中。

19. 发明申请

US20150166885A1 TRANSFORMATIVE WAVELENGTH CONVERSION MEDIUM 有权
标题翻译：变换波长转换介质
公开(公告)号：US20150166885A1
公开(公告)日：2015-06-18
申请号：US14550265
申请日：2014-11-21
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Kishori Deshpande , Robert E. Hefner, JR. , Peter Trefonas , Maurice J. Marks , Jong Keun Park , Jieqian Zhang
IPC分类号： C09K11/02 , H05B33/04 , F21K99/00
CPC分类号： C09K11/02 , C09K11/08 , H01L33/502 , Y02B20/181
摘要： A transformative wavelength conversion medium is provided, comprising: a phosphor; and, a curable liquid component, wherein the curable liquid component, comprises: an aliphatic resin component, wherein the aliphatic resin component has an average of two epoxide groups per molecule; and, a curing agent; wherein the curable liquid component contains less than 0.5 wt % of monoepoxide molecules (based on the total weight of the aliphatic resin component); and, wherein the curable liquid component is a liquid at 25° C. and atmospheric pressure; and, wherein the phosphor is dispersed in the curable liquid component.
摘要翻译：提供变换波长转换介质，包括：磷光体; 以及可固化液体组分，其中所述可固化液体组分包含：脂族树脂组分，其中所述脂族树脂组分每分子平均具有两个环氧基团; 和固化剂; 其中可固化液体组分含有小于0.5重量％的单环氧化物分子（基于脂族树脂组分的总重量）; 并且其中所述可固化液体组分在25℃和大气压下为液体; 并且其中所述荧光体分散在所述可固化液体组分中。

20. 发明授权

US09927556B2 Nanostructure material methods and devices 有权
公开(公告)号：US09927556B2
公开(公告)日：2018-03-27
申请号：US15066863
申请日：2016-03-10
申请人： The Board of Trustees of the University of Illinois , Rohm and Haas Electronic Materials, LLC , Dow Global Technologies LLC
发明人： Brian Cunningham , Gloria G. See , Peter Trefonas, III , Jieqian Zhang , Jong Keun Park , Kevin Howard , Kishori Deshpande , Trevor Ewers
IPC分类号： G02B1/08 , G02B27/28 , G02B5/30 , G02B1/04 , G02B5/18 , H01L33/58
CPC分类号： G02B1/08 , G02B1/04 , G02B5/1861 , G02B5/30 , G02B5/3025 , G02B27/28 , H01L33/58
摘要： In one aspect, structures are provided that comprise (a) a one-dimensional periodic plurality of layers, wherein at least two of the layers have a refractive index differential sufficient to provide effective contrast; and (b) one or more light-emitting nanostructure materials effectively positioned with respect to the refractive index differential interface, wherein the structure provides a polarized output emission.

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