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11. 发明授权

US6100115A Semiconductor device 失效
公开(公告)号：US6100115A
公开(公告)日：2000-08-08
申请号：US166121
申请日：1998-10-05
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , H01L23/31 , H01L23/495 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34
CPC分类号： H01L24/32 , H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/05 , H01L24/06 , H01L25/105 , H01L29/0657 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/06136 , H01L2224/16 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48624 , H01L2224/48724 , H01L2224/48799 , H01L2224/73215 , H01L2224/85205 , H01L2224/8592 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , Y10T29/49121
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

12. 发明授权

US5742101A Semiconductor device 失效
公开(公告)号：US5742101A
公开(公告)日：1998-04-21
申请号：US458166
申请日：1995-06-02
申请人： Toshiyuki Sakuta , Kazuyuki Miyazawa , Satoshi Oguchi , Aizo Kaneda , Masao Mitani , Shozo Nakamura , Kunihiko Nishi , Gen Murakami
发明人： Toshiyuki Sakuta , Kazuyuki Miyazawa , Satoshi Oguchi , Aizo Kaneda , Masao Mitani , Shozo Nakamura , Kunihiko Nishi , Gen Murakami
IPC分类号： H01L23/29 , H01L23/495 , H01L23/48 , H01L23/02 , H01L29/46
CPC分类号： H01L23/4951 , H01L23/293 , H01L2224/05599 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48599 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/14
摘要： A semiconductor device is provided in connection with a semiconductor chip which has a plurality of bonding pads at a part corresponding to a centrally located area of the front or first main surface thereof, an organic insulator film which overlies the semiconductor chip and which has an opening in correspondence with the bonding pads, a plurality of leads which overly the organic insulator film, and a molding resin with which these constituents are sealed or packaged.

13. 发明授权

US5365113A Semiconductor device 无效
标题翻译：半导体器件
公开(公告)号：US5365113A
公开(公告)日：1994-11-15
申请号：US125
申请日：1993-01-04
申请人： Toshiyuki Sakuta , Kazuyuki Miyazawa , Satoshi Oguchi , Aizo Kaneda , Masao Mitani , Shozo Nakamura , Kunihiko Nishi , Gen Murakami
发明人： Toshiyuki Sakuta , Kazuyuki Miyazawa , Satoshi Oguchi , Aizo Kaneda , Masao Mitani , Shozo Nakamura , Kunihiko Nishi , Gen Murakami
IPC分类号： H01L23/29 , H01L23/495 , H01L23/48 , H01L23/02 , H01L23/28 , H01L29/46
CPC分类号： H01L23/4951 , H01L23/293 , H01L2224/05599 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48599 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/14
摘要： A semiconductor device is provided in connection with a semiconductor chip which has a plurality of bonding pads at a part corresponding to a centrally located area of the front or first main surface thereof, an organic insulator film which overlies the semiconductor chip and which has an opening in correspondence with the bonding pads, a plurality of leads which overly the organic insulator film, and a molding resin with which these constituents are sealed or packaged.
摘要翻译：半导体器件与半导体芯片相连，该半导体芯片在与其前表面或第一主表面的中心位置相对应的部分处具有多个接合焊盘;半导体芯片，覆盖在半导体芯片上并具有开口与接合焊盘相对应，多个有机绝缘膜上的引线，以及密封或封装这些成分的成型树脂。

14. 发明授权

US5297177A Fuel assembly, components thereof and method of manufacture 失效
标题翻译：燃料组件及其组件及制造方法
公开(公告)号：US5297177A
公开(公告)日：1994-03-22
申请号：US948030
申请日：1992-09-21
申请人： Masahisa Inagaki , Masayoshi Kanno , Hiromasa Hirakawa , Hideaki Ishizaki , Nobukazu Yamamoto , Hideo Maki , Junjiro Nakajima , Shozo Nakamura , Satoshi Kanno
发明人： Masahisa Inagaki , Masayoshi Kanno , Hiromasa Hirakawa , Hideaki Ishizaki , Nobukazu Yamamoto , Hideo Maki , Junjiro Nakajima , Shozo Nakamura , Satoshi Kanno
IPC分类号： C22F1/18 , G21C3/06 , G21C3/07 , G21C3/30 , G21C3/324 , G21C3/326 , G21C3/34
CPC分类号： C22F1/186 , G21C3/07 , G21Y2002/104 , G21Y2004/10 , G21Y2004/30 , Y02E30/40 , Y10S376/90
摘要： A fuel assembly, where crystallographic orientations of a channel box are brought into a random distribution; and cladding tubes, spacers and a channel box are made from highly corrosion-resistant, Fe--Ni, zirconium-based alloy, hardened in the (.alpha.+.beta.) phase or .beta.-phase temperature region, has an average discharge burnup level of 50 to 550 GWd/t.
摘要翻译：燃料组件，其中通道箱的晶体取向被带入随机分布; 并且包覆管，间隔件和通道箱由在（（α）+（β））相或（β）相温度区域硬化的高耐腐蚀性Fe-Ni，锆基合金制成，具有平均排放燃耗水平为50〜550 GW / t。

15. 发明授权

US4353213A Side stream type condensing system and method of operating the same 失效
标题翻译：侧流式冷凝系统及其运行方法
公开(公告)号：US4353213A
公开(公告)日：1982-10-12
申请号：US177072
申请日：1980-08-11
申请人： Toyohiko Masuda , Takeshi Ueno , Yoji Nagai , Hiroshi Tsunematsu , Shozo Nakamura
发明人： Toyohiko Masuda , Takeshi Ueno , Yoji Nagai , Hiroshi Tsunematsu , Shozo Nakamura
IPC分类号： F28B9/08 , B01D5/00 , F22D11/00 , F28B11/00 , F01K19/00
CPC分类号： B01D5/009 , B01D5/00 , F22D11/006
摘要： A side stream type condenser which has a first hot well for condensing steam exhausted from a turbine and storing the condensed water and a second hot well for storing the purified condensed water to prepare for water feed to a main system includes a partition plate for defining the two hot wells. The partition plate is formed with a weir portion so that part of the condensed water in the second hot well may overflow to keep a fixed water level. The weir portion is constructed in the shape of a labyrinth and is formed with a passage normally filled up with the condensed water, and a space in the upper part of the second hot well communicates with the upper space of the first hot well through this passage only. The condensed water in the first hot well is fed to a purifying system disposed outside, and is purified therein. It is thereafter fed to the second hot well when the main system requires the feed water and to the first hot well when not, through pipe means constructed so as to feed the water selectively to the first hot well and the second hot well. The water level of the first hot well is controlled by causing the condensed water to overflow from the weir portion. On the other hand, the water level of the second hot well is controlled in such a way that the actual water level is detected by a water level gauge disposed in the second hot well, that the quantities of water in an inlet and outlet of a tank for storing the feed water of the main system are controlled in accordance with the detected water level, and that the feed water of the tank is caused to flow into the first hot well.
摘要翻译：一种侧流式冷凝器，其具有用于冷凝从涡轮机排出的蒸汽并储存冷凝水的第一热井，以及用于储存净化的冷凝水以准备供给主系统的水的第二热井，包括用于限定两个热水井。分隔板形成有堰部分，使得第二热井中的部分冷凝水可能溢出以保持固定的水位。堰部构造成迷宫的形状，并形成有通常填充有冷凝水的通道，并且第二热井的上部中的空间通过该通道与第一热井的上部空间连通只要。将第一热水中的冷凝水供给到设置在外部的净化系统，并将其净化。然后当主系统需要给水时和第一个热井，当不是通过构造成将水选择性地供给到第一热井和第二热井的管道装置时，它被送入第二个热井。通过使冷凝水从堰部溢出来控制第一热井的水位。另一方面，第二热水井的水位以这样的方式进行控制，即通过设置在第二热井中的水位计来检测实际水位，即在第二热井的入口和出口处的水量根据检测到的水位控制主系统的供水的储存罐，并且使得罐的给水流入第一热井。

16. 发明授权

US4187685A Method and system for effecting control governing of a steam turbine 失效
标题翻译：实现蒸汽轮机控制控制的方法和系统
公开(公告)号：US4187685A
公开(公告)日：1980-02-12
申请号：US876944
申请日：1978-02-10
申请人： Kunio Tsuji , Katsukuni Hisano , Akira Sakai , Shozo Nakamura
发明人： Kunio Tsuji , Katsukuni Hisano , Akira Sakai , Shozo Nakamura
IPC分类号： F01D17/24 , F01K13/02
CPC分类号： F01K13/02
摘要： A method and system for effecting control governing of a steam turbine wherein the steam chamber of a first stage nozzle is divided into a plurality of steam compartments, control valves each connected to one of the steam compartments are individually operated for controlling the flow rate of steam introduced into the turbine, and the governing of the nozzle is effected by adjusting the flow rate of steam in accordance with a load. At low load, the degree of opening of the control valves is kept constant and the turbine is driven by steam of a reduced pressure by reducing the pressure of the steam at the inlet of the turbine so as to maintain, in a low load region, the volume flow rate of steam for a high load region. To cope with a change in the value of the load, the degree of opening corresponding to a predetermined change in the value of the load is set beforehand for each control valve. When the change in the value of the load is smaller than the predetermined change in the value of the load, the degree of opening of the control valve involved is adjusted. Conversely, when the change in the value of the load is greater than the predetermined change in the value of the load, the pressure of the steam at the inlet of the turbine is controlled.
摘要翻译：一种用于实现蒸汽轮机的控制控制的方法和系统，其中第一级喷嘴的蒸汽室被分成多个蒸汽隔间，各自连接到一个蒸汽隔间的控制阀被单独操作以控制蒸汽的流量引入涡轮机，并且通过根据负载调节蒸汽的流量来实现喷嘴的调节。在低负载下，控制阀的开度保持恒定，并且通过减小涡轮入口处的蒸汽的压力使涡轮由减压蒸汽驱动，以便在低负荷区域中保持，高负荷区域的蒸汽体积流量。为了应对负载值的变化，对于每个控制阀，预先设定对应于负载值的预定变化的开度。当负载值的变化小于负载值的预定变化时，调节所涉及的控制阀的开度。相反，当负载值的变化大于负载值的预定变化时，控制涡轮入口处的蒸汽的压力。

17. 发明授权

US06720208B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06720208B2
公开(公告)日：2004-04-13
申请号：US10322672
申请日：2002-12-19
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L2144
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , H01L2924/00012 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0695 , H01L2224/85399
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
摘要翻译：由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小杂散容量，提高信号传输速率和减少电气噪声。

18. 发明授权

US06204552B1 Semiconductor device 失效
公开(公告)号：US06204552B1
公开(公告)日：2001-03-20
申请号：US09481398
申请日：2000-01-12
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L23495
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421 , H01L2924/00012 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0695 , H01L2224/85399
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

19. 发明授权

US6069029A Semiconductor device chip on lead and lead on chip manufacturing 失效
标题翻译：半导体器件芯片上引线和芯片上制造
公开(公告)号：US6069029A
公开(公告)日：2000-05-30
申请号：US60368
申请日：1998-04-15
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjo , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsuro Matsumoto
IPC分类号： H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34 , H01L21/44
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
摘要翻译：由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小杂散容量，提高信号传输速率和减少电气噪声。

20. 发明授权

US6018191A Semiconductor device 失效
公开(公告)号：US6018191A
公开(公告)日：2000-01-25
申请号：US35104
申请日：1998-03-05
申请人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
发明人： Gen Murakami , Kunihiro Tsubosaki , Masahiro Ichitani , Kunihiko Nishi , Ichiro Anjoh , Asao Nishimura , Makoto Kitano , Akihiro Yaguchi , Sueo Kawai , Masatsugu Ogata , Syuuji Eguchi , Hiroyoshi Kokaku , Masanori Segawa , Hiroshi Hozoji , Takashi Yokoyama , Noriyuki Kinjo , Aizo Kaneda , Junichi Saeki , Shozo Nakamura , Akio Hasebe , Hiroshi Kikuchi , Isamu Yoshida , Takashi Yamazaki , Kazuyoshi Oshima , Tetsurou Matsumoto
IPC分类号： H01L21/52 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/10 , H01L29/06 , H05K1/14 , H05K1/18 , H05K3/34 , H01L23/52
CPC分类号： H01L23/3107 , H01L23/4951 , H01L23/49555 , H01L23/49558 , H01L23/49568 , H01L23/49586 , H01L24/32 , H01L24/49 , H01L25/105 , H01L29/0657 , H01L2224/0401 , H01L2224/05554 , H01L2224/05599 , H01L2224/16245 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/85205 , H01L2224/8592 , H01L2224/92147 , H01L2225/1005 , H01L2225/1029 , H01L2225/107 , H01L2225/1088 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H05K1/144 , H05K1/181 , H05K3/3421
摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

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