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    • 18. 发明授权
    • Method for measuring gases and/or minimizing cross sensitivity in FET-based gas sensors
    • 在基于FET的气体传感器中测量气体和/或最小化交叉灵敏度的方法
    • US07946153B2
    • 2011-05-24
    • US11587173
    • 2005-04-22
    • Maximilian FleischerUwe LampeHans MeixnerRoland PohleElfriede Simon
    • Maximilian FleischerUwe LampeHans MeixnerRoland PohleElfriede Simon
    • G01N7/00
    • G01N27/4143G01N33/006
    • A gas sensor based on a field effect transistor (“FET”) evaluates both a change in work function of a gas-sensitive layer of the FET and a change in the capacitance of the layer. Thus, two physically independent signals are read from the gas-sensitive layer, each signal representing a sensitivity to a different gas. This reduces the effect of cross-sensitivities; that is, of one gas on the target gas. The underlying physical mechanisms, the first causing a change in the work function in a reaction with gases and the second causing a change in the capacitance of the sensitive layer, are widely different. Because of this, the two parameters demonstrate different gas sensitivities. If the reactions to both gases are known, the effect of the interfering gas on the sensor signal can be compensated for, and with this the concentration of the target gas can be determined.
    • 基于场效应晶体管(“FET”)的气体传感器评估FET的气敏层的功函数变化和层的电容变化。 因此,从气体敏感层读取两个物理独立的信号,每个信号表示对不同气体的敏感性。 这降低了交叉敏感性的影响; 也就是目标气体上的一种气体。 潜在的物理机制,首先引起与气体反应的功函数的变化,第二个导致敏感层的电容变化的物理机制是不同的。 因此,这两个参数表现出不同的气体敏感性。 如果对两种气体的反应是已知的,则可以补偿干扰气体对传感器信号的影响,并且可以确定目标气体的浓度。