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11. 发明授权

US5989722A Reduced pressure device and method of making 失效
标题翻译：减压装置及制作方法
公开(公告)号：US5989722A
公开(公告)日：1999-11-23
申请号：US85238
申请日：1998-05-27
申请人： Tadahiro Ohmi , Masaru Umeda
发明人： Tadahiro Ohmi , Masaru Umeda
IPC分类号： C23C8/14 , C23C14/35 , C23C14/56 , C23C16/44 , H01J37/32 , B32B9/00
CPC分类号： H01J37/32174 , C23C14/35 , C23C14/564 , C23C16/4404 , C23C8/14 , H01J37/32082 , H01J2237/186 , Y10T428/265 , Y10T428/31678
摘要： A reduced pressure device the reduced pressure chamber of which is constructed of stainless steel, and includes a passivation film formed on the exposed interior surface thereof. The film has a thickness more than 50 .ANG. and is composed of two or more layers. One layer contains mainly chrome oxide formed in the vicinity of the interface of the stainless steel and the passivation film. The other layer contains mainly iron oxide formed in the vicinity of the surface of the passivation film. A passivation film may also be used with a thickness of more than 50 .ANG. and containing mainly a mixture of the chrome oxide and the iron oxide. Lastly a passivation film may also be used with thickness of more than 50 .ANG. and containing mainly chrome oxide.
摘要翻译：一种减压装置，其减压室由不锈钢构成，并包括在其暴露的内表面上形成的钝化膜。该膜的厚度大于50，由两层或多层组成。一层主要含有形成在不锈钢和钝化膜界面附近的氧化铬。另一层主要在钝化膜的表面附近形成氧化铁。还可以使用钝化膜，其厚度大于50埃，并且主要含有氧化铬和氧化铁的混合物。最后，钝化膜也可以使用，其厚度大于50，主要含有氧化铬。

12. 发明授权

US5854116A Semiconductor apparatus 失效
标题翻译：半导体装置
公开(公告)号：US5854116A
公开(公告)日：1998-12-29
申请号：US422640
申请日：1995-04-14
申请人： Tadahiro Ohmi , Tadashi Shibata , Masaru Umeda
发明人： Tadahiro Ohmi , Tadashi Shibata , Masaru Umeda
IPC分类号： H01L21/285 , H01L21/768 , H01L21/20
CPC分类号： H01L21/2855 , H01L21/76838
摘要： The present invention relates to a semiconductor apparatus adapted to a ultrahigh density integration process. A semiconductor apparatus of the present invention is characterized by including a high concentration impurity layer with the same type of conductivity as that of a semiconductor wafer provided on the back of the semiconductor wafer, and at least one layer of a low resistance electrode provided on said high concentration impurity layer.
摘要翻译：本发明涉及适用于超高密度集成处理的半导体装置。本发明的半导体装置的特征在于包括具有与设置在半导体晶片的背面上的半导体晶片相同类型的导电性的高浓度杂质层，以及至少一层设置在所述半导体晶片上的低电阻电极高浓度杂质层。

13. 发明授权

US5110438A Reduced pressure surface treatment apparatus 失效
标题翻译：减压表面处理设备
公开(公告)号：US5110438A
公开(公告)日：1992-05-05
申请号：US536548
申请日：1990-07-10
申请人： Tadahiro Ohmi , Tadashi Shibata , Masaru Umeda
发明人： Tadahiro Ohmi , Tadashi Shibata , Masaru Umeda
IPC分类号： H01L21/28 , C23C14/22 , C23C14/34 , C23C14/40 , H01J37/32 , H01J37/34 , H01L21/00 , H01L21/285 , H01L29/47 , H01L29/872
CPC分类号： H01L21/67017 , H01J37/32082 , H01J37/32706 , H01J37/34 , H01J2237/32 , H01J2237/3348
摘要： The reduced pressure surface treatment apparatus according the present invention comprises at least one vacuum chamber and an exhaust unit and a gas supply unit connected thereto, and it is characterized in that it is provided with a holder to hold the specimen, means to bombard the specimen with ions without depositing a thin film on said specimen surface, and means to control kinetic energy of said ions to a small value. The reduced pressure surface treatment method of this invention is characterized in that substances adsorbed on the wafer surface or natural oxide film layers are removed by impinging ions on the wafer surface under a vacuum condition.
摘要翻译： PCT No.PCT / JP89 / 00026 Sec。 371日期1990年7月10日 102（e）日1990年7月10日PCT 1990年1月12日提交PCT。根据本发明的减压表面处理装置包括至少一个真空室和排气单元以及与其连接的气体供应单元，其特征在于由于设置有用于保持试样的保持器，用离子轰击试样而不在所述试样表面上沉积薄膜的装置，以及将所述离子的动能控制在较小值的装置。本发明的减压表面处理方法的特征在于，通过在真空条件下在晶片表面上冲击离子来去除吸附在晶片表面或自然氧化物膜层上的物质。

14. 发明授权

US4984060A Semiconductor device wirings with hillocks 失效
标题翻译：半导体器件与小丘配线
公开(公告)号：US4984060A
公开(公告)日：1991-01-08
申请号：US359764
申请日：1989-07-21
申请人： Tadahiro Ohmi , Tadashi Shibata , Masaru Umeda
发明人： Tadahiro Ohmi , Tadashi Shibata , Masaru Umeda
IPC分类号： H01L23/52 , H01L21/3205 , H01L23/522 , H01L23/528
CPC分类号： H01L23/5226 , H01L23/5283 , H01L2924/0002
摘要： A semiconductor device comprises metal wirings with its minimum line width of 1 .mu.m or less and on the surface of said metal wiring there is no hillock which has its height equal to or more than 1/4 of the minimum line width of said metal wiring. The main portion of said metal wiring is formed with pure metal, and is supplied in connection portion between the metal wiring and a semiconductor substrate with a barrier layer for preventing any atoms involved in said metal parts from diffusing into the semiconductor substrate.
摘要翻译： PCT No.PCT / JP88 / 00972 Sec。 371日期：1989年7月21日 102（e）日期1989年7月21日PCT PCT日期为1988年9月24日。一种半导体器件包括其最小线宽为1μm或更小的金属布线，并且在所述金属布线的表面上没有小丘高度等于或大于所述金属布线的最小线宽度的1/4。所述金属布线的主要部分由纯金属形成，并且在金属布线和具有阻挡层的半导体基板之间的连接部分中供应，以防止参与所述金属部件的任何原子扩散到半导体基板中。

15. 发明授权

US5591267A Reduced pressure device 失效
标题翻译：减压装置
公开(公告)号：US5591267A
公开(公告)日：1997-01-07
申请号：US458894
申请日：1995-06-02
申请人： Tadahiro Ohmi , Masaru Umeda
发明人： Tadahiro Ohmi , Masaru Umeda
IPC分类号： C23C8/14 , C23C14/35 , C23C14/56 , C23C16/44 , F16K31/02 , F16K51/02 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32174 , C23C14/35 , C23C14/564 , C23C16/4402 , C23C16/4404 , C23C8/14 , F16K31/02 , F16K51/02 , H01J37/32082 , H01J2237/186
摘要： A reduced pressure device the reduced pressure chamber of which is constructed of stainless steel, and includes a passivation film formed on the exposed interior surface thereof. The film has a thickness of more than 50 .ANG. and is composed of two or more layers. One layer contains mainly chrome oxide formed in the vicinity of the interface of the stainless steel and the passivation film. The other layer contains mainly iron oxide formed in the vicinity of the surface of the passivation film. A passivation film may also be used with a thickness of more than 50 .ANG. and containing mainly a mixture of chrome oxide and iron oxide. Lastly a passivation film may also be used with thickness of more than 50 .ANG. and containing mainly chrome oxide.
摘要翻译：一种减压装置，其减压室由不锈钢构成，并包括在其暴露的内表面上形成的钝化膜。该膜的厚度大于50，由两层或多层组成。一层主要含有形成在不锈钢和钝化膜界面附近的氧化铬。另一层主要在钝化膜的表面附近形成氧化铁。还可以使用钝化膜，其厚度大于50埃，并主要含有氧化铬和氧化铁的混合物。最后，钝化膜也可以使用，其厚度大于50，主要含有氧化铬。

16. 发明授权

US5313982A Gas supply piping device for a process apparatus 失效
标题翻译：用于处理装置的气体供应管道装置
公开(公告)号：US5313982A
公开(公告)日：1994-05-24
申请号：US121174
申请日：1993-09-13
申请人： Tadahiro Ohmi , Nakahara Fumio , Tuyosi Satoh , Masaru Umeda
发明人： Tadahiro Ohmi , Nakahara Fumio , Tuyosi Satoh , Masaru Umeda
IPC分类号： C23C8/14 , C23C14/56 , C23C16/44 , B08B9/02
CPC分类号： C23C16/4404 , C23C14/564 , C23C16/4402 , C23C8/14 , Y10T137/4358 , Y10T137/87249
摘要： A gas supply pipeline system for process equipment which is adapted to supply at least two kinds of process gas. The system includes two independent flow passages formed between each process gas supply pipeline and a purge gas supply pipeline. The system further includes plurality of flow passages each of which is connected between one of the process gas supply pipelines and the process apparatus. Each of the process gas supply pipelines can be purged independently and the stagnation of gas in the pipelines which are not in use can be prevented by flowing purge gas constantly therethrough.
摘要翻译：一种用于工艺设备的气体供应管道系统，其适于提供至少两种工艺气体。该系统包括在每个工艺气体供应管线和吹扫气体供应管线之间形成的两个独立的流动通道。该系统还包括多个流动通道，每个流动通道连接在一个工艺气体供应管道和处理装置之间。每个工艺气体供应管道可以独立地清洗，并且可以通过不断地吹扫吹扫气体来防止未被使用的管道中的气体停滞。

17. 发明授权

US5160429A Piping system for supplying ultra-pure water 失效
标题翻译：用于供应超纯水的管道系统
公开(公告)号：US5160429A
公开(公告)日：1992-11-03
申请号：US635590
申请日：1990-12-31
申请人： Tadahiro Ohmi , Michiya Kawakami , Tadashi Shibata , Masaru Umeda
发明人： Tadahiro Ohmi , Michiya Kawakami , Tadashi Shibata , Masaru Umeda
IPC分类号： B01D61/22 , C02F1/00 , C02F1/32 , C02F1/44 , H01L21/304
CPC分类号： B01D61/22 , C02F1/006 , C02F1/32 , C02F1/444 , Y10S210/90
摘要： The present invention offers a piping system for supplying ultra-pure water, which comprises a circulation tank to store primary pure water from a primary pure water producing unit, a pump for sending the primary pure water from said circulation tank, an outward pipe, one end of which is connected to a final purifying unit to purify primary pure water from said pump to ultra-pure water, a plurality of connection pipes, each end of which is connected to the other end of said outward pipe, a branching pipe connected between the middle of said connection pipe and the ultra-pure water using unit and having a branching valve to adjust the water quantity, and a return pipe connected between the other end of said connection pipe and said circulation tank, characterized in that means for controlling the output of said pump is provided to keep the water pressure at constant level by detecting the water pressure in said outward pipe, thereby supplying a constant quantity of ultra-pure water to the ultra-pure water using unit at all times, and that ultra-pure water of ultra-high purity can be stably supplied by preventing counterflow from the return pipe to the ultra-pure water using unit.
摘要翻译： PCT No.PCT / JP90 / 00648 Sec。 371 1990年12月31日第 102（e）1990年12月31日PCT PCT 1989年6月29日PCT公布。出版物WO90 / 00155 日本1990年1月11日。本发明提供了一种用于提供超纯水的管道系统，其包括循环罐，用于储存来自初级纯水生产单元的初级纯水，用于将来自所述循环的初级纯水罐，一个向外的管，其一端连接到最终净化单元，以将来自所述泵的初级纯水纯化成超纯水;多个连接管，其每个端部连接到所述外部的另一端管，连接在所述连接管的中间和超纯水使用单元之间并具有分流阀以调节水量的分支管;以及连接在所述连接管的另一端和所述循环罐之间的回流管，其特征在于，提供用于控制所述泵的输出的装置，用于通过检测所述外管中的水压来将水压保持在恒定水平，从而提供恒定量的ul 将超纯水用于超纯水使用单位，通过防止从返回管逆流到超纯水使用单元，可以稳定地提供超纯净的超纯水。

18. 发明授权

US4917136A Process gas supply piping system 失效
标题翻译：工艺供气管道系统
公开(公告)号：US4917136A
公开(公告)日：1990-04-17
申请号：US198079
申请日：1988-05-24
申请人： Tadahiro Ohmi , Kazuhiko Sugiyawa , Fumio Nakahara , Masaru Umeda
发明人： Tadahiro Ohmi , Kazuhiko Sugiyawa , Fumio Nakahara , Masaru Umeda
IPC分类号： F17D1/04 , B01J4/00 , B08B9/02 , B08B9/032 , C23C16/455 , F17D1/02 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
CPC分类号： B08B9/0325 , B08B9/0328 , C23C16/455 , C23C16/45561 , H01J37/3244 , Y10S134/902 , Y10T137/0419 , Y10T137/4259
摘要： This invention relates to the supply piping system of the process gas for various types of thin-film making and fine pattern dry etching process, and more particularly to the process gas supply system, which makes it possible to form high quality thin films and to perform high quality etching.Specifically, when there are a unit in operation with process gas supplied and a unit not in operation with no process gas supplied in a process gas supply piping system, supplying the process gas to two or more process units from a cylinder cabinet piping system, this invention provides a gas supply piping system, where the process gas supply piping line to the process unit not in operation can be purged with purge gas all the time and where gas flows all the time through all of gas supply piping lines to eliminate the stagnation of gas.
摘要翻译：本发明涉及用于各种薄膜制造和精细图案干蚀刻工艺的工艺气体的供应管道系统，更具体地涉及工艺气体供应系统，这使得可以形成高质量的薄膜并执行高品质蚀刻。具体地说，当在处理气体供给管道系统中存在具有工业气体运转的单元和不进行工艺气体运转的单元时，将处理气体从筒柜配管系统供给到两个以上的处理单元时，本发明提供了一种气体供应管道系统，其中不处于操作的处理单元的工艺气体供应管线可以一直被吹扫气体吹扫，并且其中气体始终流过所有气体供应管线，以消除停滞加油站。

19. 发明授权

US4869301A Cylinder cabinet piping system 失效
标题翻译：气缸柜管道系统
公开(公告)号：US4869301A
公开(公告)日：1989-09-26
申请号：US194841
申请日：1988-05-17
申请人： Tadahiro Ohmi , Kazuhiko Sugiyama , Fumio Nakahara , Masaru Umeda
发明人： Tadahiro Ohmi , Kazuhiko Sugiyama , Fumio Nakahara , Masaru Umeda
IPC分类号： B01D46/42 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/3065 , B08B9/00
CPC分类号： H01L21/67069 , Y10T137/4259
摘要： The cylinder cabinet piping system of this invention has a system to supply a purge gas continuously to the main line, or to the main line and the branch line, thereby to prevent stagnation of gas in the purge gas line and to supply a super-high-purity gas to a process unit.
摘要翻译：本发明的气缸柜配管系统具有连续向主管线，主管线和分支管路供给净化气体的系统，从而防止气体在净化气体管路中停滞，并提供超高压纯度气体输送到处理单元。

20. 发明申请

US20120040098A1 CARBURETOR, CARBURETOR FOR MOCVD USING SAME, CENTER ROD FOR USE IN THE CARBURETOR OR CARBURETOR FOR MOCVD, METHOD FOR DISPERSING CARRIER GAS, AND METHOD FOR VAPORIZING CARRIER GAS 有权
标题翻译：用于使用相同的MOCVD的CARBURETOR，用于MOCVD的碳水化合物或碳水化合物的中心棒，用于分散载体气体的方法和用于蒸发载体气体的方法
公开(公告)号：US20120040098A1
公开(公告)日：2012-02-16
申请号：US13147668
申请日：2010-01-27
申请人： Masayuki Toda , Masaru Umeda
发明人： Masayuki Toda , Masaru Umeda
IPC分类号： C23C16/18 , C23C16/44 , B05C9/02
CPC分类号： B01B1/005 , C23C16/4481
摘要： Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.
摘要翻译：本发明提供一种能够有效地冷却载气的蒸发器，提高防止材料在气体通路的出口附近堵塞的效果，有助于延长维护时间，提高作业效率，发挥更均匀的分散效果。蒸发器包括：插入到分散器中形成的载气导入孔中的中心杆，与载气引入孔的内壁配合形成气体通道; 冷却部，其设置在所述分散器中的所述载气导入孔的外周侧，以冷却所述气体通道的内部; 沿所述中心杆的轴向方向跨过所述中心杆的整个长度形成的冷却构件插入孔; 以及设置在冷却部件插入孔的内部以冷却中心杆的冷却部件。

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