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    • 13. 发明授权
    • Method of manufacturing piezoelectric vibrating reed, piezoelectric vibrating reed, piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled timepiece
    • 制造压电振动片,压电振动片,压电振动器,振荡器,电子设备和无线电控制时计的方法
    • US08445185B2
    • 2013-05-21
    • US12950737
    • 2010-11-19
    • Masayuki Kawaguchi
    • Masayuki Kawaguchi
    • G03F7/20H03H3/02
    • H03H9/21G04R20/10H03H9/1021Y10T29/42
    • There are provided a method of manufacturing a piezoelectric vibrating reed capable of improving the reliability of a product by sorting out a defective product correctly, a piezoelectric vibrating reed, a piezoelectric vibrator having a piezoelectric vibrating reed, an oscillator, an electronic apparatus, and a radio-controlled timepiece. In a resist pattern forming step, a resist pattern is formed by performing contact exposure on a photoresist film in a state where a photomask is in close contact with the photoresist film. Before the resist pattern forming step, a photomask treatment step is included in which when a defect is found in an outer shape equivalent region equivalent to the outer pattern in the photomask, a part of a light shielding film pattern is removed to change the shape of the outer shape equivalent region where damage is present.
    • 提供一种制造压电振动片的方法,该压电振动片能够通过正确地分类不合格产品来提高产品的可靠性,压电振动片,具有压电振动片的压电振动器,振荡器,电子设备和 无线电遥控表。 在抗蚀剂图案形成步骤中,通过在光掩模与光致抗蚀剂膜紧密接触的状态下对光致抗蚀剂膜进行接触曝光来形成抗蚀剂图案。 在抗蚀剂图案形成步骤之前,包括光掩模处理步骤,其中当在与光掩模中的外部图案相当的外形等效区域中发现缺陷时,去除一部分遮光膜图案以改变形状 存在损坏的外形等效区域。
    • 15. 发明授权
    • Semiconductor integration device and fabrication method of the same
    • 半导体集成器件及其制造方法相同
    • US6051872A
    • 2000-04-18
    • US32103
    • 1998-02-27
    • Satoru KanekoMasayuki KawaguchiHirotsugu Hata
    • Satoru KanekoMasayuki KawaguchiHirotsugu Hata
    • H01L21/331H01L29/417H01L29/423H01L27/082
    • H01L29/66272H01L29/41708H01L29/42304
    • A lead electrode (57) is formed to expose an active base region (61). On the lead electrode (57) is formed a lead electrode (64) for an emitter electrode via an insulation film (56). When a base contact hole (65') for exposing the lead electrode (57) and an emitter contact hole for exposing the lead electrode (64) are formed at the same time, total thickness of the insulation film on the lead electrode (64) is thinner than that of the insulation layer on the lead electrode (57), which results in excessive etching on a part of the surface of the lead electrode to form recess. The lead electrode (64) is led out to a LOCOS film to form the emitter contact hole in a region on the LOCOS film to expose the lead electrode (64). Therefore, the recess having been formed on the lead electrode (64) upon forming the emitter contact hole is made to form on the LOCOS film outside the emitter region. The recess prevents depth of the emitter region from dispersing.
    • 形成引线电极(57)以暴露活性碱性区域(61)。 在引线电极(57)上经由绝缘膜(56)形成用于发射电极的引线电极(64)。 当同时形成用于使引线电极(57)露出的基极接触孔(65')和用于使引线电极(64)露出的发射极接触孔时,引线电极(64)上的绝缘膜的总厚度 比引线电极(57)上的绝缘层薄,这导致对引线电极的一部分表面的过度蚀刻以形成凹陷。 引线电极(64)被引出到LOCOS膜,以在LOCOS膜上的区域中形成发射极接触孔,以露出引线电极(64)。 因此,在形成发射极接触孔的引线电极(64)上形成的凹部被形成在发射极区域外部的LOCOS膜上。 该凹口防止发射极区域的深度分散。