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11. 发明申请

US20130149847A1 METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED THEREFOR 有权
标题翻译：制造GaN基膜及其使用的复合基板的方法
公开(公告)号：US20130149847A1
公开(公告)日：2013-06-13
申请号：US13696873
申请日：2011-12-21
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , C03C10/0018 , C04B35/106 , C04B35/16 , C04B35/185 , C04B35/481 , C04B35/486 , C04B35/488 , C04B35/645 , C04B35/6455 , C04B2235/3225 , C04B2235/3244 , C04B2235/3246 , C04B2235/3463 , C04B2235/9607 , C30B23/025 , C30B25/183 , C30B29/406 , H01L21/02002 , H01L21/02422 , H01L21/02436 , H01L21/02458 , H01L21/02658 , H01L21/02664
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

12. 发明申请

US20080283968A1 Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 有权
标题翻译： III-氮化物半导体晶体及其制造方法和III-III族氮化物半导体器件
公开(公告)号：US20080283968A1
公开(公告)日：2008-11-20
申请号：US11579645
申请日：2005-03-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： H01L29/20 , C03B9/00
CPC分类号： C30B9/12 , C30B11/00 , C30B29/403 , H01L21/02389 , H01L21/02392 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02625 , H01L33/0075 , H01S5/32341
摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
摘要翻译：一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

13. 发明申请

US20080212198A1 Molded lens and molding tool 有权
标题翻译：成型镜片和成型工具
公开(公告)号：US20080212198A1
公开(公告)日：2008-09-04
申请号：US12071560
申请日：2008-02-22
申请人： Tadahiro Kuwa , Hideki Komiya , Masashi Yoshimura
发明人： Tadahiro Kuwa , Hideki Komiya , Masashi Yoshimura
IPC分类号： G02B11/00
CPC分类号： C03B11/08 , B29D11/00009 , C03B2215/404 , C03B2215/49 , Y02P40/57 , Y10S425/808
摘要： A lens is manufactured by hardening soft material filled inside a molding tool by cooling. The lens includes a convex lens portion having an optical axis, and a marking portion located outside of an effective diameter of the lens portion. The shape or the position of the marking portion is set to prevent deformation of the marking portion by contact with the molding tool due to shrinkage of the material during cooling.
摘要翻译：通过冷却将硬化填充在模制工具内的软质硬化来制造透镜。透镜包括具有光轴的凸透镜部分和位于透镜部分的有效直径之外的标记部分。设置标记部分的形状或位置，以防止由于冷却期间材料的收缩导致标记部分与模具接触而导致变形。

14. 发明授权

US07419448B2 Drive belt pulley and belt drive system 有权
标题翻译：驱动皮带轮和皮带传动系统
公开(公告)号：US07419448B2
公开(公告)日：2008-09-02
申请号：US10944756
申请日：2004-09-21
申请人： Hirofumi Miyata , Shinichiro Nishikawa , Masashi Yoshimura
发明人： Hirofumi Miyata , Shinichiro Nishikawa , Masashi Yoshimura
IPC分类号： F16H7/12 , F16H7/20 , F16H55/36
CPC分类号： F16H55/36 , F16H7/12 , F16H7/20 , F16H2007/0865 , F16H2055/363
摘要： A hollow cylindrical pulley body 5 is carried rotatably by a hollow cylindrical shaft member 11. A support rod 8 is inserted in the shaft member 11 to support the shaft member 11 for rocking motion about a pivot axis C2 orthogonal to the shaft member 11. The pivot axis C2 is inclined backward in the direction of belt travel with respect to the direction of load on the shaft member 11. With this configuration, when the drive belt 3 deviates to one side, the pulley body 5 is immediately angularly moved so that it is inclined with a level difference with respect to the direction of load on the shaft member 11 and is positioned obliquely relative to the drive belt 3, thereby producing a force of returning the drive belt 3 to its normal position.
摘要翻译：中空圆筒形滑轮主体5由中空圆柱形轴构件11可转动地承载。支撑杆8插入到轴构件11中，以支撑轴构件11以围绕与轴构件11正交的枢转轴线C 2摇摆运动。枢转轴线C 2相对于轴构件11上的负载方向在带行进方向上向后倾斜。利用这种构造，当驱动带3偏离到一侧时，滑轮主体5立即成角度地移动，使得它相对于轴构件11上的负载方向倾斜水平差，并相对于驱动带3，从而产生使驱动带3返回其正常位置的力。

15. 发明授权

US07387584B2 Drive belt pulley and belt drive system 有权
标题翻译：驱动皮带轮和皮带传动系统
公开(公告)号：US07387584B2
公开(公告)日：2008-06-17
申请号：US10944709
申请日：2004-09-21
申请人： Hirofumi Miyata , Shinichiro Nishikawa , Masashi Yoshimura
发明人： Hirofumi Miyata , Shinichiro Nishikawa , Masashi Yoshimura
IPC分类号： F16H55/32 , F16H7/20 , F16D3/14
CPC分类号： F16H7/12 , F16H7/18 , F16H55/36 , F16H2007/0865 , Y10S474/902
摘要： A hollow cylindrical pulley body 5 is carried rotatably by a hollow cylindrical shaft member 11. A support rod 8 is inserted in the shaft member 11, and the shaft member 11 is elastically supported to the support rod 8 through an elastic body 10. The elastic body 10 is provided within a quarter of the periphery of the support rod 8 that is located, when viewed along the axis of the shaft member 11, forward of the line of action of a radial shaft load on the shaft member 11 with respect to the direction of rotation of the pulley body 5. With this configuration, when the drive belt 3 deviates to one side, the pulley body 5 is immediately angularly moved so that it is inclined with a level difference with respect to the direction of the radial shaft load and is positioned obliquely relative to the drive belt 3. In this manner, a force of compensating for the deviation of the drive belt 3 is produced to avoid its wobbling.
摘要翻译：中空圆筒形滑轮主体5由中空圆柱形轴构件11可转动地承载。支撑杆8插入到轴构件11中，并且轴构件11通过弹性体10弹性地支撑到支撑杆8。弹性体10设置在支撑杆8的周边的四分之一之内，当沿着轴构件11的轴线观察时，其位于轴构件11上的径向轴负载的作用线的前方，相对于到滑轮主体5的旋转方向。利用这种构造，当驱动带3偏离到一侧时，滑轮主体5立即成角度地移动，使得其相对于径向轴载荷的方向倾斜，并且相对于驱动带倾斜地定位 3。以这种方式，产生补偿驱动带3的偏差的力，以避免其摆动。

16. 发明授权

US07348286B2 Ceramic composite material and method of its manufacture 失效
标题翻译：陶瓷复合材料及其制造方法
公开(公告)号：US07348286B2
公开(公告)日：2008-03-25
申请号：US10904191
申请日：2004-10-28
申请人： Masashi Yoshimura , Tomoyuki Ueno
发明人： Masashi Yoshimura , Tomoyuki Ueno
IPC分类号： C04B35/52 , B28B7/34
CPC分类号： C04B35/58007 , B82Y30/00 , C04B35/528 , C04B35/565 , C04B35/575 , C04B35/58 , C04B35/58014 , C04B35/58021 , C04B35/581 , C04B35/583 , C04B35/584 , C04B35/593 , C04B35/6261 , C04B35/645 , C04B2235/3244 , C04B2235/3821 , C04B2235/3826 , C04B2235/3856 , C04B2235/386 , C04B2235/3865 , C04B2235/3869 , C04B2235/3873 , C04B2235/3886 , C04B2235/404 , C04B2235/422 , C04B2235/781 , C04B2235/80 , C04B2235/94 , C04B2235/9607 , C04B2235/963
摘要： Ceramic composite material that has excellent mechanical properties within a range from room temperature to high temperature and high die release with respect to glass, resins, ceramics, and similar substances. The ceramic composite material is composed of a ceramic phase and a phase containing 2 to 98 wt. % carbon and/or boron nitride as the main component, and that has a mean particle size of 100 nm or less, wherein the thermal expansion coefficient is within a range of 2.0-9.0×10−6/° C. and the surface roughness after surface polishing is 0.05 μm or less. The sintered body of the material is obtained by sintering a mixture of powdered starting materials at a sintering temperature of 800-1500° C. and a sintering pressure of 200 MPa or higher.
摘要翻译：陶瓷复合材料在室温至高温范围内具有优异的机械性能，相对于玻璃，树脂，陶瓷和类似物质具有较高的脱模性。陶瓷复合材料由陶瓷相和含有2〜98wt。％碳和/或氮化硼作为主要成分，其平均粒径为100nm以下，其中，热膨胀系数在2.0〜9.0×10 -6 /℃的范围内表面抛光后的表面粗糙度为0.05μm以下。该材料的烧结体通过在800-1500℃的烧结温度和200MPa或更高的烧结压力下烧结起始材料的混合物而获得。

17. 发明申请

US20080022921A1 Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device 有权
标题翻译：第III族氮化物晶体及其制造方法，III族氮化物晶体基板和半导体器件
公开(公告)号：US20080022921A1
公开(公告)日：2008-01-31
申请号：US11628253
申请日：2005-04-15
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Seiji Nakahata , Ryu Hirota
IPC分类号： C30B29/38 , C30B11/06 , C30B9/10 , H01L33/00
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32
摘要： A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
摘要翻译：一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。

18. 发明授权

US07247203B2 Process for producing crystalline nucleus and method of screening crystallization conditions 失效
标题翻译：生产晶核的方法和筛选结晶条件的方法
公开(公告)号：US07247203B2
公开(公告)日：2007-07-24
申请号：US10525809
申请日：2003-08-25
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Hiroaki Adachi , Hiroshi Masuhara , Youichiroh Hosokawa , Kazufumi Takano
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Hiroaki Adachi , Hiroshi Masuhara , Youichiroh Hosokawa , Kazufumi Takano
IPC分类号： C30B29/54
CPC分类号： C30B7/00 , C30B29/58 , Y10S117/904
摘要： The present invention relates to a process for producing high-quality crystals of protein or organic substances easily and efficiently. A solution of protein or an organic substance is prepared and then is cooled slowly to be supersaturated to a low degree. This supersaturated solution is irradiated with a femtosecond laser 10. A local explosion phenomenon occurs at the focal point of the laser and thereby a crystalline nucleus is generated. A high-quality crystal is obtained when a crystal is grown on the crystalline nucleus over a long period of time. The femtosecond laser to be used herein can be a titanium:sapphire laser having a wavelength of 800 nm, a duration of 120 fs, a frequency of 1 kHz, and an output of 400 mW.
摘要翻译：本发明涉及容易高效地生产蛋白质或有机物质的优质晶体的方法。制备蛋白质或有机物质的溶液，然后缓慢冷却至低饱和度。用飞秒激光10照射该过饱和溶液。在激光的焦点发生局部爆炸现象，从而产生晶核。当晶体长时间在晶核上生长时，获得高质量的晶体。本文使用的飞秒激光可以是波长为800nm，持续时间为120fs，频率为1kHz，输出为400mW的钛：蓝宝石激光。

19. 发明申请

US20070129233A1 Ceramic composite material and method for producing same 有权
标题翻译：陶瓷复合材料及其制造方法
公开(公告)号：US20070129233A1
公开(公告)日：2007-06-07
申请号：US10595577
申请日：2004-10-22
申请人： Tomoyuki Ueno , Masashi Yoshimura
发明人： Tomoyuki Ueno , Masashi Yoshimura
IPC分类号： C04B35/52 , C04B35/569 , C04B35/587
CPC分类号： C04B35/645 , B82Y30/00 , C04B35/117 , C04B35/185 , C04B35/443 , C04B35/486 , C04B35/488 , C04B35/52 , C04B35/522 , C04B35/524 , C04B35/528 , C04B35/565 , C04B35/575 , C04B35/581 , C04B35/584 , C04B35/593 , C04B35/597 , C04B35/6261 , C04B35/6303 , C04B35/80 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3246 , C04B2235/3256 , C04B2235/3463 , C04B2235/3826 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3856 , C04B2235/3865 , C04B2235/3869 , C04B2235/3873 , C04B2235/3886 , C04B2235/404 , C04B2235/422 , C04B2235/424 , C04B2235/425 , C04B2235/427 , C04B2235/5248 , C04B2235/5288 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/658 , C04B2235/6581 , C04B2235/767 , C04B2235/77 , C04B2235/781 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/963
摘要： Highly wear-resistant, low-friction ceramic composites suited for machining-tool, sliding-component, and mold-die materials are made available. The ceramic composites characterized are constituted from a phase having carbon of 3 μm or less, preferably 30 nm or less, average crystal-grain size as the principal component, and a ceramic phase (with the proviso that carbon is excluded). The ceramic phase is at least one selected from the group made up of nitrides, carbides, oxides, composite nitrides, composite carbides, composite oxides, carbonitrides, oxynitrides, oxycarbonitrides, and oxycarbides of Al, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ceramic composites are produced by sintering the source-material powders at a sintering temperature of 800 to 1500° C. and a sintering pressure of 200 MPa or greater.
摘要翻译：提供了适用于加工工具，滑动部件和模具模具材料的高度耐磨，低摩擦的陶瓷复合材料。所述陶瓷复合体由具有3μm以下，优选30nm以下的碳，作为主要成分的平均结晶粒径和陶瓷相（前提是不排除碳）的相构成。陶瓷相是选自由氮化物，碳化物，氧化物，复合氮化物，复合碳化物，复合氧化物，碳氮化物，氮氧化物，碳氮氧化物和Al，Si，Ti，Zr，Hf，V， Nb，Ta，Cr，Mo和W.通过在800〜1500℃的烧结温度和200MPa以上的烧结压力下烧结源材料粉末来制造陶瓷复合体。

20. 发明授权

US07008893B2 Silicon nitride-based composite sintered body and producing method thereof 失效
标题翻译：氮化硅基复合烧结体及其制造方法
公开(公告)号：US07008893B2
公开(公告)日：2006-03-07
申请号：US11031994
申请日：2005-01-11
申请人： Masashi Yoshimura
发明人： Masashi Yoshimura
IPC分类号： C04B35/00
CPC分类号： C04B35/58071 , B82Y30/00 , C04B35/58014 , C04B35/58064 , C04B35/583 , C04B35/584 , C04B35/587 , C04B35/591 , C04B35/593 , C04B35/62615 , C04B35/62842 , C04B35/6303 , C04B35/64 , C04B2235/3217 , C04B2235/3225 , C04B2235/3804 , C04B2235/3813 , C04B2235/3826 , C04B2235/3843 , C04B2235/3856 , C04B2235/386 , C04B2235/3873 , C04B2235/3886 , C04B2235/404 , C04B2235/422 , C04B2235/425 , C04B2235/46 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/549 , C04B2235/666 , C04B2235/781 , C04B2235/80 , C04B2235/85 , C04B2235/96
摘要： The present invention provides a silicon nitride-based sintered body having excellent mechanical properties from room temperature to a medium-low temperature range, a low friction coefficient and excellent wear resistance; a raw material powder for the sintered body; a method of producing the raw material powder; and a method of producing the sintered body.The sintered body of the present invention comprises silicon nitride, titanium compounds and boron nitride, or else silicon nitride, a titanium-based nitride and/or carbide, silicon carbide and graphite and/or carbon; and it has a mean particle diameter of 100 nm or less, and a friction coefficient under lubricant-free conditions of 0.3 or less, or else 0.2 or less. The silicon nitride-based composite powder, which is the raw material of the sintered body comprises primary particles of each of silicon nitride and titanium compounds, containing boron or carbon, each having a mean particle diameter of 20 nm or less, or 30 nm or less, and a phase containing an amorphous phase that surrounds the surfaces of the primary particles. Moreover, the method of producing the sintered body comprises pulverizing and mixing a silicon nitride powder, a sintering aid powder, a metallic titanium powder and a boron nitride powder, or else a silicon nitride powder, a sintering aid powder, a metallic titanium powder and a graphite and/or carbon powder, until the mean particle diameters become 20 nm or less, or else 30 nm or less, thus forming secondary
摘要翻译：本发明提供一种氮化硅类烧结体，其具有从室温至中低温范围的优异的机械性能，低摩擦系数和优异的耐磨性; 用于烧结体的原料粉末; 一种生产原料粉末的方法; 以及烧结体的制造方法。本发明的烧结体包括氮化硅，钛化合物和氮化硼，或氮化硅，钛基氮化物和/或碳化物，碳化硅和石墨和/或碳; 平均粒径为100nm以下，无润滑条件下的摩擦系数为0.3以下，或0.2以下。作为烧结体的原料的氮化硅系复合粉末包含平均粒径为20nm以下或30nm以下的硼或碳的氮化硅和钛化合物的一次粒子，以及包含包围一次颗粒表面的非晶相的相。此外，制造烧结体的方法包括将氮化硅粉末，烧结助剂粉末，金属钛粉末和氮化硼粉末，或氮化硅粉末，烧结助剂粉末，金属钛粉末和石墨和/或碳粉末，直到平均粒径变为20nm以下，或者30nm以下，从而形成二次

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