会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 11. 发明申请
    • Wafer dividing method
    • 晶圆分割法
    • US20080293220A1
    • 2008-11-27
    • US11889024
    • 2007-08-08
    • Masaru Nakamura
    • Masaru Nakamura
    • H01L21/302
    • H01L21/78H01L21/67092H01L21/67132
    • A method of dividing a wafer having a plurality of dividing lines which are formed in a lattice pattern on the front surface, into individual chips along the dividing lines, the method comprising a wafer affixing step for affixing the front surface of the wafer to the front surface of a holding plate having stiffness through an adherent layer; a grinding step for grinding the rear surface of the wafer affixed to the holding plate to a predetermined thickness; a deteriorated layer forming step for applying a pulse laser beam of a wavelength having permeability for the wafer from the rear surface of the wafer which is affixed to the holding plate and has undergone the grinding step to form a deteriorated layer in the inside of the wafer along the dividing lines; a wafer transfer step for putting the rear surface of the wafer which has undergone the deteriorated layer forming step on an adherent tape mounted on an annular frame and removing the holding plate from the front surface of the wafer; and a wafer dividing step for exerting external force to the wafer put on the adherent tape to divide the wafer along the dividing lines.
    • 一种将在前表面上以格子状形成的多条分割线的晶片沿分割线划分成各个芯片的方法,该方法包括将晶片的前表面固定在前面的晶片固定步骤 通过粘合层具有刚度的保持板的表面; 研磨步骤,用于将固定在所述保持板上的所述晶片的后表面研磨至预定厚度; 劣化层形成步骤,用于从固定在保持板上的晶片的背面施加具有晶片导磁率的波长的脉冲激光束,并进行研磨步骤,以在晶片内部形成劣化层 沿分界线; 用于将已经经历劣化层形成步骤的晶片的后表面放置在安装在环形框架上的粘附带上并从晶片的前表面移除保持板的晶片转移步骤; 以及用于对放置在粘附带上的晶片施加外力以沿分割线分割晶片的晶片分割步骤。
    • 13. 发明申请
    • Wafer dividing method
    • 晶圆分割法
    • US20080153264A1
    • 2008-06-26
    • US12071711
    • 2008-02-25
    • Masaru NakamuraYusuke Nagai
    • Masaru NakamuraYusuke Nagai
    • H01L21/00
    • H01L21/78B23K26/40B23K2103/50B28D5/0011H01L21/6836H01L2221/68327
    • A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.
    • 一种分割具有多个装置的晶片的方法,所述晶片形成在由前表面上的格子图案形成的街道划分的多个区域中,并且具有形成在街道上的测试金属图案,包括以下步骤: 激光束施加步骤,用于通过在形成在晶片上的街道中的测试金属图案的两侧沿着街道施加激光束来进行激光处理以在测试金属图案的两侧上沿着街道形成分割起始点 ; 以及分割步骤,通过向晶片施加外力,分割已经被激光处理的晶片沿分割开始点形成分割开始点,导致留下在其上形成有测试金属图案的街道。
    • 14. 发明授权
    • Wafer dividing method
    • 晶圆分割法
    • US07329564B2
    • 2008-02-12
    • US11198137
    • 2005-08-08
    • Masaru NakamuraYusuke NagaiKentaro Iizuka
    • Masaru NakamuraYusuke NagaiKentaro Iizuka
    • H01L21/00H01L21/30H01L21/46
    • H01L21/6836H01L21/78H01L33/0095H01L2221/68327H01L2221/68336
    • A method of dividing a wafer having a plurality of dividing lines formed on the front surface in a lattice pattern and function elements formed in a plurality of areas sectioned by the plurality of dividing lines into individual chips, along the dividing lines, the method comprising the steps of forming a deteriorated layer by applying a laser beam capable of passing through the wafer along the dividing lines; expanding the support tape affixed to the wafer to divide the wafer into individual chips along the dividing lines where the deteriorated layer has been formed and to form a space between adjacent chips; and applying an external stimulus to an area, to which the wafer is affixed, of the support tape in the above state to cure the adhesive layer to maintain the space between adjacent chips.
    • 一种将沿着划分线将形成在前表面上的多个划分线的晶片和由多个分割线划分成多个区域的功能元件分成单个芯片的方法,该方法包括: 通过施加能够沿分割线穿过晶片的激光束形成劣化层的步骤; 扩展固定在晶片上的支撑胶带,沿着形成了劣化层的分割线将晶片分割成单独的芯片,并在相邻芯片之间形成空间; 并且在上述状态下将外部刺激施加到支撑带的晶片固定的区域上,以固化粘合剂层以保持相邻芯片之间的空间。
    • 15. 发明授权
    • Switching power source apparatus
    • 开关电源装置
    • US07292461B2
    • 2007-11-06
    • US11549850
    • 2006-10-16
    • Masaru Nakamura
    • Masaru Nakamura
    • H02M3/335
    • H02M3/3385
    • A switching power source apparatus has a switching element being connected with a DC power source through a primary winding of a transformer in which parasitic capacitance exists between terminals of the switching element. A voltage V4 of free oscillation appears at a gate of the switching element after a flyback period due to the parasitic capacitance. Based on the free oscillation voltage, the switching power source apparatus detects timing synchronized with a period of the free oscillation, outputs a trigger signal V10 based on the detected timing, uses the trigger signal to estimate bottom timing when the free oscillation reaches a bottom level the second time, outputs an ON start signal V9 synchronized with the bottom timing, uses the ON start signal to output an ON control signal to turn on the switching element, and drives the switching element in response to the ON control signal.
    • 开关电源装置具有通过变压器的初级绕组与直流电源连接的开关元件,其中开关元件的端子之间存在寄生电容。 在由于寄生电容引起的反激期之后,开关元件的栅极处出现自由振荡的电压V 4。 基于自由振荡电压,开关电源装置检测与自由振荡周期同步的定时,基于检测到的定时输出触发信号V10,当自由振荡达到底部时,使用触发信号来估计底部定时 输出与底部定时同步的ON启动信号V9,使用ON起始信号输出ON控制信号以接通开关元件,并响应于ON控制信号驱动开关元件。
    • 17. 发明申请
    • Wafer dividing method
    • 晶圆分割法
    • US20070004179A1
    • 2007-01-04
    • US11472285
    • 2006-06-22
    • Masaru NakamuraYusuke Nagai
    • Masaru NakamuraYusuke Nagai
    • H01L21/78
    • H01L21/78B23K26/40B23K2103/50B28D5/0011
    • A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface and test metal patterns which are formed on the streets, comprising: a metal pattern breaking step for forming a break line in the test metal patterns by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position near the test metal patterns; a deteriorated layer forming step for forming a deteriorated layer along the streets above the break lines in the inside of the wafer by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position above the break lines in the inside of the wafer; and a dividing step for dividing the wafer into individual chips along the deteriorated layers of the wafer by exerting external force to the wafer having the deteriorated layers formed therein.
    • 一种分割具有多个装置的晶片的方法,所述晶片形成在由正面上的格子图案形成的街道划分的多个区域中,并且测试形成在街道上的金属图案,包括:金属图案断裂步骤 用于通过将其焦点设置在靠近测试金属图案的位置向晶片的后表面施加具有渗透性的脉冲激光束,从而在测试金属图案中形成断裂线; 劣化层形成步骤,用于通过将具有渗透性的脉冲激光束施加到晶片的后表面,使其焦点设置在晶片的上方,沿着晶片内部的断裂线上方的街道形成劣化层 晶片内部的断裂线; 以及分割步骤,通过向其中形成有劣化层的晶片施加外力,将晶片分割成沿晶片的劣化层的各个芯片。