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11. 发明授权

US4311505A Method of manufacturing glass-lined metal tubes 失效
标题翻译：制造玻璃衬金属管的方法
公开(公告)号：US4311505A
公开(公告)日：1982-01-19
申请号：US202071
申请日：1980-10-30
申请人： Tadashi Yasui , Isamu Nakamura , Shigeo Goto
发明人： Tadashi Yasui , Isamu Nakamura , Shigeo Goto
IPC分类号： C03C27/04 , C03C27/02 , C23D5/04
CPC分类号： C03C27/02 , Y10T29/4994
摘要： A method of manufacturing glass-lined tube. An undercoat of glass is fused onto the surfaces of nozzle-shaped flange-pieces, from their outer peripheral edges to their molded and curved inner faces, welding flange components then welded to either end of the metal tube to form a complete flange at each end. The inner faces of the weld zones are then shaped by grinding and polishing. A glass tube that is greater in length than the metal tube is fitted loosely into the latter tube. The glass tube is supported at either end within the wells of conical caps which are fitted around the flanges by air-permeable spacer-rings, with the ends of the glass tube extending beyond the outward faces of the flange joints and with the glass tube being securely positioned at the center line of the metal tube. The entire assembly is heated so that the glass tube will soften and expand under the influence of internal pressure, thus providing a continuous covering of the inner surface of the metal tube extending to the surface of the flange junction.
摘要翻译：一种制造玻璃衬管的方法。将玻璃底层从喷嘴状凸缘的表面熔化到其外周边缘到其模制和弯曲的内表面，然后将焊接法兰部件焊接到金属管的任一端，以在每一端形成完整的凸缘。然后通过研磨和抛光将焊接区的内表面成形。长度大于金属管的玻璃管宽松地装入后一管。玻璃管在圆锥形盖的孔中的任一端支撑，圆锥形盖的孔通过透气隔离环安装在凸缘周围，玻璃管的端部延伸超过法兰接头的外表面，玻璃管为牢固地定位在金属管的中心线处。整个组件被加热，使得玻璃管在内部压力的作用下会软化和膨胀，从而提供延伸到凸缘连接处表面的金属管的内表面的连续覆盖。

12. 发明授权

US5373191A Semiconductor device and method of producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5373191A
公开(公告)日：1994-12-13
申请号：US998856
申请日：1992-12-30
申请人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
发明人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
IPC分类号： H01L21/285 , H01L21/331 , H01L21/335 , H01L21/337 , H01L21/338 , H01L21/60 , H01L21/8252 , H01L23/485 , H01L29/812 , H01L29/80 , H01L23/48 , H01L29/06 , H01L29/48
CPC分类号： H01L21/76897 , H01L21/28587 , H01L21/8252 , H01L23/485 , H01L29/66318 , H01L29/66462 , H01L29/66863 , H01L29/66871 , H01L29/66924 , H01L29/8128 , H01L2924/0002
摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.
摘要翻译：具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容并且有利地增加源极栅极击穿电压。上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

13. 发明授权

US5351128A Semiconductor device having reduced contact resistance between a channel or base layer and a contact layer 失效
标题翻译：具有降低沟道或基底层与接触层之间的接触电阻的半导体器件
公开(公告)号：US5351128A
公开(公告)日：1994-09-27
申请号：US919676
申请日：1992-07-27
申请人： Shigeo Goto , Hidetoshi Matsumoto , Masamitsu Yazawa , Yasunari Umemoto , Yoko Uchida , Kenji Hiruma
发明人： Shigeo Goto , Hidetoshi Matsumoto , Masamitsu Yazawa , Yasunari Umemoto , Yoko Uchida , Kenji Hiruma
IPC分类号： H01L29/45 , H01L29/16 , H01L29/205
CPC分类号： H01L29/452
摘要： A field-effect transistor or a bipolar transistor may be provided in which the contact resistance between a channel layer or base layer and a contact layer are reduced. For example, an InGaAs buffer layer may be formed on the substrate side of an InGaAs channel layer of a field-effect transistor and by the bypassing effect that carriers pass through this InGaAs buffer layer, the InGaAs channel layer comes in contact with the contact layer with a low resistance. The contact resistance between the InGaAs channel layer and the contact layer can be reduced to 10 ohm per a width of 10.mu.m, and as a result, the value of transconductance factor K of a field-effect transistor can be increased in 14 mA/V.sup.2 per a width of 10.mu.m.
摘要翻译：可以提供场效应晶体管或双极晶体管，其中沟道层或基极层与接触层之间的接触电阻降低。例如，可以在场效应晶体管的InGaAs沟道层的衬底侧上形成InGaAs缓冲层，并且通过载流子通过该InGaAs缓冲层的旁路效应，InGaAs沟道层与接触层接触具有低阻力。 InGaAs沟道层和接触层之间的接触电阻可以减小到10欧姆，宽度为10微米，结果是场效应晶体管的跨导因子K的值可以增加到14mA / V2宽度为10微米。

14. 发明授权

US5181087A Semiconductor device and method of producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5181087A
公开(公告)日：1993-01-19
申请号：US340471
申请日：1989-04-19
申请人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
发明人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
IPC分类号： H01L21/285 , H01L21/331 , H01L21/335 , H01L21/337 , H01L21/338 , H01L21/60 , H01L21/8252 , H01L23/485 , H01L29/812
CPC分类号： H01L21/76897 , H01L21/28587 , H01L21/8252 , H01L23/485 , H01L29/66318 , H01L29/66462 , H01L29/66863 , H01L29/66871 , H01L29/66924 , H01L29/8128 , H01L2924/0002
摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.
摘要翻译：具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容并且有利地增加源极栅极击穿电压。上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

15. 发明授权

US4776897A Method for treating the surface of stainless steel by high temperature oxidation 失效
标题翻译：通过高温氧化处理不锈钢表面的方法
公开(公告)号：US4776897A
公开(公告)日：1988-10-11
申请号：US928783
申请日：1986-11-10
申请人： Haruji Takahashi , Shigeo Goto , Syuichi Takata , Mitsuaki Shibata , Tomihira Hata
发明人： Haruji Takahashi , Shigeo Goto , Syuichi Takata , Mitsuaki Shibata , Tomihira Hata
IPC分类号： C23C8/02 , C23C8/14 , C23C8/18
CPC分类号： C23C8/14 , C23C8/02
摘要： This disclosure is concerned with a method for treating a stainless steel surface by high temperature oxidation. The surface of a stainless steel article is cleaned, TiO.sub.2 and SiO.sub.2 are mixed in microparticles to form a coating agent, and water is added to the mixture to make a slip. The slip is coated on the steel surface to form a coating having a uniform thickness. The coating is dried and the article is subjected to a heat-treatment to form an oxide film. This treatment is performed in an oxidizing atmosphere for a time and a temperature suitable for the color tone to be produced. A desirable temperature for the heat-treatment is between 350.degree. C. to 700.degree. C. When a coating agent is used, it is later removed by washing, etc. after cooling the article. Further, when less dissolution of iron from the stainless steel surface is required, a decolorization treatment is applied; that is, the colored oxide film is removed from the surface by dissolution using an acid or an electrolytic treatment.

16. 发明授权

US06576503B2 Laser diodes and manufacturing methods 有权
公开(公告)号：US06576503B2
公开(公告)日：2003-06-10
申请号：US09902778
申请日：2001-07-12
申请人： Takeshi Kikawa , Shigeo Goto
发明人： Takeshi Kikawa , Shigeo Goto
IPC分类号： H01C2144
CPC分类号： H01S5/028 , H01S5/0282
摘要： A laser diode having an optical cavity which is formed on top of a semiconductor substrate and has semiconductor crystals and an oxide layer that is substantially free from arsenic oxide. The oxide layer may be formed by using the matrix of the optical cavity as a matrix or a layer formed by the hydrogenation or oxygenation of the matrix of the cavity on at least one side of the optical cavity. The laser diode has a long operational life and high reliability without facet degradation.

17. 发明授权

US06455876B1 Semiconductor radiative device 有权
标题翻译：半导体辐射装置
公开(公告)号：US06455876B1
公开(公告)日：2002-09-24
申请号：US09931894
申请日：2001-08-20
申请人： Takeshi Kikawa , Shigeo Goto
发明人： Takeshi Kikawa , Shigeo Goto
IPC分类号： H01L3300
CPC分类号： H01S5/028
摘要： A semiconductor radiative device comprises a layered film comprised of a low-refraction first dielectric film and a high-refraction second dielectric film having a refraction index greater than that of the first dielectric film, and formed on at least one of facets of an optical cavity. The high-refraction second dielectric film is an amorphous dielectric film of nitrogen-doped hydrogenated silicon. The semiconductor radiative device is capable of stably operating in a high-output mode for a long period of time.
摘要翻译：半导体辐射装置包括由低折射率第一介电膜和折射率大于第一介电膜的折射率的高折射率第二介电膜构成的层状膜，并形成在光腔的至少一个面上。高折射率第二电介质膜是氮掺杂氢化硅的非晶体介质膜。半导体辐射装置能够长时间稳定地在高输出模式下工作。

18. 发明授权

US5656540A Semiconductor crystal growing method 失效
标题翻译：半导体晶体生长方法
公开(公告)号：US5656540A
公开(公告)日：1997-08-12
申请号：US411464
申请日：1995-03-28
申请人： Yasuhiko Nomura , Shigeo Goto , Yoshitaka Morishita
发明人： Yasuhiko Nomura , Shigeo Goto , Yoshitaka Morishita
IPC分类号： H01L21/205 , H01L21/20 , H01L21/203 , H01L29/06
CPC分类号： H01L21/02395 , H01L21/02433 , H01L21/02543 , H01L21/02546 , H01L21/0262 , Y10S438/925
摘要： On a surface of a p-type GaAs (111)B substrate 11, a mesa groove is formed along a [211]A direction. TDMAAs as a group V material and TMGa as a group III material are supplied at 8.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow n-type GaAs 13 dominantly on a side surface of a mesa 12. Subsequently, the group V material is changed to metal As. As.sub.4 and MAGa are supplied at 5.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow p-type GaAs 14 only on a side surface of the GaAs 13. Then, the group V material is again changed to TDMAAs. TDMAAs and TMGa are supplied both at 8.times.10.sup.-4 Pa to grow p-type GaAs 15.
摘要翻译：在p型GaAs（111）B基板11的表面上沿[2 + E，ovs 11 + EE] A方向形成台面槽。以8×10 -3 Pa和8×10 -4 Pa分别提供作为V族材料的TDMAAs和作为III族材料的TMGa，以主要在台面12的侧表面上生长n型GaAs 13。材质改为金属As。 As4和MAGa分别以5×10 -3 Pa和8×10 -4 Pa供应，以仅在GaAs 13的侧表面上生长p型GaAs 14。然后，组V材料再次改变为TDMAA。在8×10 -4 Pa下提供TDMAAs和TMGa以生长p型GaAs 15。

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