专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06875629B2 III group nitride based semiconductor element and method for manufacture thereof 失效
标题翻译： III族氮化物类半导体元件及其制造方法
公开(公告)号：US06875629B2
公开(公告)日：2005-04-05
申请号：US10479590
申请日：2002-06-03
申请人： Masanobu Senda , Naoki Shibata , Jun Ito , Toshiaki Chiyo
发明人： Masanobu Senda , Naoki Shibata , Jun Ito , Toshiaki Chiyo
IPC分类号： C23C4/02 , C23C4/18 , H01L21/20 , H01L29/20 , H01L33/32 , H01L21/00
CPC分类号： C30B25/18 , C23C4/02 , C23C4/18 , C30B29/403 , H01L21/0242 , H01L21/02425 , H01L21/02458 , H01L21/02472 , H01L21/02491 , H01L21/02505 , H01L21/0254 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10S257/918
摘要： A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III nitride compound semiconductor layer can be grown with good crystallinity on the undercoat layer. TiN is sprayed on the undercoat layer to form a thermal spray depositing layer. Then, the separator layer is chemically etched to reveal the undercoat layer. Then, a Group III nitride compound semiconductor layer is grown on a surface of the undercoat layer.
摘要翻译：在蓝宝石等的辅助基板上形成有Ti的隔离层。在隔离层上形成TiN的底涂层。提供底涂层，使得能够在底涂层上生长具有良好结晶性的III族氮化物化合物半导体层。将TiN喷涂在底涂层上以形成热喷涂沉积层。然后，隔离层被化学蚀刻以露出底涂层。然后，在底涂层的表面上生长III族氮化物化合物半导体层。

12. 发明授权

US06841808B2 Group III nitride compound semiconductor device and method for producing the same 有权
标题翻译： III族氮化物化合物半导体器件及其制造方法
公开(公告)号：US06841808B2
公开(公告)日：2005-01-11
申请号：US09885046
申请日：2001-06-21
申请人： Naoki Shibata , Toshiaki Chiyo , Masanobu Senda , Jun Ito , Hiroshi Watanabe , Shinya Asami , Shizuyo Asami
发明人： Naoki Shibata , Toshiaki Chiyo , Masanobu Senda , Jun Ito , Hiroshi Watanabe , Shinya Asami , Shizuyo Asami
IPC分类号： H01L21/20 , H01L33/00 , H01L33/32 , H01L31/0328 , H01L27/15 , H01L31/0336 , H01L31/12
CPC分类号： H01L33/32 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/007
摘要： An AlN layer having a surface of a texture structure is formed on a sapphire substrate. Then, a growth suppressing material layer is formed on the AlN layer so that the AlN layer is partially exposed to the outside. Then, group III nitride compound semiconductor layers are grown on the AlN layer and on the growth suppressing material layer by execution of an epitaxial lateral overgrowth method. Thus, a group III nitride compound semiconductor device is produced. An undercoat layer having convex portions each shaped like a truncated hexagonal pyramid is formed on a substrate. Group III nitride compound semiconductor layers having a device function are laminated successively on the undercoat layer.
摘要翻译：在蓝宝石衬底上形成具有纹理结构表面的AlN层。然后，在AlN层上形成生长抑制材料层，使得AlN层部分地暴露在外部。然后，通过执行外延横向过度生长法，在AlN层和生长抑制材料层上生长III族氮化物化合物半导体层。因此，制造了III族氮化物化合物半导体器件。在基板上形成具有各自成形为截头六角锥的凸部的底涂层。具有器件功能的III族氮化物化合物半导体层依次层压在底涂层上。

13. 发明授权

US06531719B2 Group III nitride compound semiconductor device 有权
标题翻译： III族氮化物化合物半导体器件
公开(公告)号：US06531719B2
公开(公告)日：2003-03-11
申请号：US09888519
申请日：2001-06-26
申请人： Naoki Shibata , Toshiaki Chiyo , Masanobu Senda , Jun Ito , Hiroshi Watanabe , Shinya Asami , Shizuyo Asami
发明人： Naoki Shibata , Toshiaki Chiyo , Masanobu Senda , Jun Ito , Hiroshi Watanabe , Shinya Asami , Shizuyo Asami
IPC分类号： H01L310336
CPC分类号： H01L33/32 , H01L31/03042 , H01L31/03046 , H01L31/184 , H01L31/1852 , H01L33/12 , H01L33/22 , H01L33/405 , H01S5/32341 , Y02E10/544 , Y10S438/978
摘要： A group III nitride compound semiconductor device has a substrate, a group III nitride compound semiconductor layer having a device function, and an undercoat layer formed between the substrate and the group III nitride semiconductor layer. The undercoat layer has a surface which has a texture structure, or which is trapezoid shaped in section or which is pit shaped. In addition, a reflection layer made of nitride of at least one metal selected from the group consisting of titanium, zirconium, hafnium and tantalum may be formed on a surface of the undercoat layer. Also the surface of the reflection layer is formed as a texture structure, a trapezoid shape in section or a pit shape.
摘要翻译： III族氮化物化合物半导体器件具有衬底，具有器件功能的III族氮化物化合物半导体层和形成在衬底和III族氮化物半导体层之间的底涂层。底涂层具有具有纹理结构的表面，或者是截面呈梯形或凹坑形的表面。此外，可以在底涂层的表面上形成由选自钛，锆，铪和钽中的至少一种金属的氮化物制成的反射层。此外，反射层的表面也形成为纹理结构，截面为梯形或凹坑形状。

14. 发明授权

US06623998B2 Method for manufacturing group III nitride compound semiconductor device 有权
标题翻译：制造III族氮化物化合物半导体器件的方法
公开(公告)号：US06623998B2
公开(公告)日：2003-09-23
申请号：US10304033
申请日：2002-11-26
申请人： Naoki Shibata , Toshiaki Chiyo , Masanobu Senda , Jun Ito , Hiroshi Watanabe , Shinya Asami , Shizuyo Asami
发明人： Naoki Shibata , Toshiaki Chiyo , Masanobu Senda , Jun Ito , Hiroshi Watanabe , Shinya Asami , Shizuyo Asami
IPC分类号： H01L2100
CPC分类号： H01L33/32 , H01L31/03042 , H01L31/03046 , H01L31/184 , H01L31/1852 , H01L33/12 , H01L33/22 , H01L33/405 , H01S5/32341 , Y02E10/544 , Y10S438/978
摘要： A method of manufacturing a group III nitride compound semiconductor device, includes providing a substrate, forming a group III nitride compound semiconductor layer having a device function, and forming an undercoat layer between the substrate and the group III nitride semiconductor layer, the undercoat layer having a surface of a peak and trough structure.
摘要翻译：一种制造III族氮化物化合物半导体器件的方法，包括提供衬底，形成具有器件功能的III族氮化物化合物半导体层，以及在衬底和III族氮化物半导体层之间形成底涂层，底涂层具有峰和槽结构的表面。

15. 发明申请

US20070278532A1 Field-Effect Transistor, Semiconductor Device, a Method for Manufacturing Them, and a Method of Semiconductor Crystal Growth 有权
标题翻译：场效应晶体管，半导体器件，其制造方法以及半导体晶体生长的方法
公开(公告)号：US20070278532A1
公开(公告)日：2007-12-06
申请号：US11578965
申请日：2005-06-09
申请人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
发明人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
IPC分类号： H01L29/778 , H01L21/335 , H01L21/338 , H01L29/812 , H01L21/36
CPC分类号： H01L29/66462 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003
摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.
摘要翻译：一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构，层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层平面。

16. 发明授权

US06925100B2 Communication device 有权
标题翻译：通讯设备
公开(公告)号：US06925100B2
公开(公告)日：2005-08-02
申请号：US10620572
申请日：2003-07-17
申请人： Masanobu Senda , Naoki Shibata
发明人： Masanobu Senda , Naoki Shibata
IPC分类号： G02B6/42 , H01L21/60 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/38 , H01L33/62 , H01L33/64 , H01S3/04 , H01S5/00
CPC分类号： H01L33/38 , G02B6/4204 , H01L33/387 , H01L2224/05001 , H01L2224/05023 , H01L2224/051 , H01L2224/05568 , H01L2224/056 , H01L2224/16225 , H01L2924/00014
摘要： In an LED, the area of contact between an ohmic electrode formed on a contact layer and the contact layer serves as an effective light-emitting area of a light-emitting layer. Therefore, while the area of contact between the ohmic electrode and the contact layer is kept small, a seat electrode is interposed so that the seat electrode is connected to a circuit wiring on a wiring board by a ball electrode being contact with the seat electrode at an area larger than the area. As a result, the size necessary for forming the ball electrode can be secured easily and the light-emitting area of the light-emitting layer in the LED can be reduced sufficiently. Accordingly, a capacitance component formed by clamping the light-emitting portion of the light-emitting layer can be reduced, so that a time constant at a leading edge of luminance and a time constant at a trailing edge of luminance can be reduced sufficiently to obtain a high speed.
摘要翻译：在LED中，形成在接触层上的欧姆电极与接触层之间的接触面积成为发光层的有效发光面积。因此，尽管欧姆电极和接触层之间的接触面积保持较小，但是插入座电极，使得座电极通过与座电极接触的球电极连接到布线板上的电路布线面积大于面积。结果，可以容易地确保形成球电极所需的尺寸，并且可以充分降低LED中的发光层的发光面积。因此，可以减少通过夹持发光层的发光部分而形成的电容分量，从而可以充分降低辉度前沿的时间常数和亮度后沿的时间常数，以获得高速。

17. 发明授权

US07981744B2 Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth 有权
标题翻译：场效应晶体管，半导体器件，它们的制造方法以及半导体晶体生长方法
公开(公告)号：US07981744B2
公开(公告)日：2011-07-19
申请号：US11578965
申请日：2005-06-09
申请人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
发明人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L29/66462 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003
摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.
摘要翻译：一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构，层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层平面。

18. 发明授权

US06897139B2 Group III nitride compound semiconductor device 有权
标题翻译： III族氮化物化合物半导体器件
公开(公告)号：US06897139B2
公开(公告)日：2005-05-24
申请号：US10297840
申请日：2001-07-18
申请人： Naoki Shibata , Masanobu Senda
发明人： Naoki Shibata , Masanobu Senda
IPC分类号： H01L33/10 , H01L21/20 , H01L21/203 , H01L21/306 , H01L31/10 , H01L33/12 , H01L33/32 , H01L21/28 , H01L21/3205
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0075 , Y10S257/918
摘要： A titanium layer and a titanium nitride layer are successively laminated on a substrate and a group III nitride compound semiconductor layer is further formed thereon. When the titanium layer is removed in the condition that a sufficient film thickness is given to the titanium nitride layer, a device having the titanium nitride layer as a substrate is obtained.
摘要翻译：在基板上依次层叠钛层和氮化钛层，并且在其上进一步形成III族氮化物化合物半导体层。当在氮化钛层具有足够的膜厚的条件下除去钛层时，得到具有氮化钛层作为基板的元件。

19. 发明授权

US06924515B2 Semiconductor light-emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US06924515B2
公开(公告)日：2005-08-02
申请号：US10454581
申请日：2003-06-05
申请人： Masanobu Senda , Jun Ito
发明人： Masanobu Senda , Jun Ito
IPC分类号： H01L33/06 , H01L33/08 , H01L33/10 , H01L33/24 , H01L33/32 , H01L33/44 , H01S5/18 , H01S5/323 , H01S5/343 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/184
CPC分类号： H01L33/20 , H01L33/10 , H01L33/32
摘要： The invention is to realize such a semiconductor light-emitting element which is higher in external quantum efficiency than an existing LED, and lower in production cost than an existing semiconductor laser. The light transmission insulating film is formed on a continuously incline face comprising the semiconductor layers having an opening angle etched in right angled V. The V shape incline is formed by a known technique, and both left and right inclined faces have the angle of 45°. Depending on the length of δ or the position of the light reflecting portion, probability that the light in duration of resonance is reflected may be made optimum or preferable. According to this structure, it is no longer necessary to carry out processing treatments of high degree, high precision, or high cost such as, e.g., multi-layered film coating in a resonance direction, and it is possible to structure the semiconductor light-emitting element having a resonating mechanism as a resonator though not forming end faces of high cost.
摘要翻译：本发明是为了实现与现有的LED相比，外部量子效率高的半导体发光元件，比现有的半导体激光器低的制造成本。光透射绝缘膜形成在包括具有以直角V蚀刻的开口角的半导体层的连续倾斜面上.V形倾斜通过已知技术形成，并且左右倾斜面的角度为45° 。取决于三角形的长度或光反射部分的位置，可以使反射持续时间的光的可能性被最佳化或优选。根据该结构，不再需要进行高度，高精度或高成本的加工处理，例如在谐振方向上的多层膜涂覆，并且可以构造半导体发光元件，具有谐振机构作为谐振器的发光元件，但不形成高成本的端面。

20. 发明授权

US07253450B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US07253450B2
公开(公告)日：2007-08-07
申请号：US10926342
申请日：2004-08-26
申请人： Masanobu Senda , Jun Ito , Koichi Goshonoo
发明人： Masanobu Senda , Jun Ito , Koichi Goshonoo
IPC分类号： H01L29/24 , H01L29/22
CPC分类号： H01L33/22 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0091 , H01L2224/05599
摘要： A foam-holding body 52 having a large difference in refractive index between foams 521 and the surrounding material is disposed on the major light extraction surface of the sapphire substrate 50. The foam-holding body 52 has translucency to light of a light-emitting wavelength and is formed of a material such as a silicone or the like, having a refractive index equal to or more than 1.77, and includes a foam-holding layer holding a plurality of foams made of an air or an inactive gas having a refractive index of about one. Therefore, when the light emitted in the light-emitting portion scatters in the foam-holding body 52, the spread of the scattered light becomes wide, which restricts repetition of the total reflection in the light-emitting device to improve an efficiency of the light extraction.
摘要翻译：在蓝宝石衬底50的主要光提取表面上设置泡沫体521与周围材料之间的折射率差大的泡沫保持体52。泡沫保持体52对发光波长的光具有透光性，并且由折射率等于或大于1.77的诸如硅酮等的材料形成，并且包括保持泡沫的泡沫保持层由折射率约为1的空气或惰性气体制成的多个泡沫体。因此，当发光部分发射的光散发在泡沫保持体52中时，散射光的扩展变宽，这限制了发光装置中的全反射的重复，以提高光的效率萃取。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式