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    • 12. 发明申请
    • High-frequency switching apparatus
    • 高频开关装置
    • US20070096845A1
    • 2007-05-03
    • US11546260
    • 2006-10-12
    • Masakazu AdachiTadayoshi Nakatsuka
    • Masakazu AdachiTadayoshi Nakatsuka
    • H01P1/15
    • H01P1/15
    • A high-frequency switching apparatus is composed of a transfer circuit unit including a plurality of FETs, and a shunt circuit unit including a plurality of FETs, as well. An electromagnetic wave absorption material element is connected to an end of the shunt circuit unit. To a connection point between the shunt circuit unit and the electromagnetic wave absorption material element, an external voltage terminal for fixing a potential at the point is connected. By this, a high-frequency switching apparatus is obtained which is excellent in isolation characteristics and is hard to break down even when a signal of a high voltage, such as an electrostatic surge, flows into the apparatus.
    • 高频开关装置由包括多个FET的转移电路单元和包括多个FET的分流电路单元构成。 电磁波吸收材料元件连接到分流电路单元的一端。 对于分流电路单元和电磁波吸收材料元件之间的连接点,连接用于固定电位的外部电压端子。 由此,获得隔离特性优异的高频开关装置,即使静电浪涌等高电压信号流入装置也难以分解。
    • 19. 发明授权
    • High-frequency switching apparatus
    • 高频开关装置
    • US07423499B2
    • 2008-09-09
    • US11546260
    • 2006-10-12
    • Masakazu AdachiTadayoshi Nakatsuka
    • Masakazu AdachiTadayoshi Nakatsuka
    • H01P1/10H01P1/15
    • H01P1/15
    • A high-frequency switching apparatus is composed of a transfer circuit unit including a plurality of FETs, and a shunt circuit unit including a plurality of FETs, as well. An electromagnetic wave absorption material element is connected to an end of the shunt circuit unit. To a connection point between the shunt circuit unit and the electromagnetic wave absorption material element, an external voltage terminal for fixing a potential at the point is connected. By this, a high-frequency switching apparatus is obtained which is excellent in isolation characteristics and is hard to break down even when a signal of a high voltage, such as an electrostatic surge, flows into the apparatus.
    • 高频开关装置由包括多个FET的转移电路单元和包括多个FET的分流电路单元构成。 电磁波吸收材料元件连接到分流电路单元的一端。 对于分流电路单元和电磁波吸收材料元件之间的连接点,连接用于固定电位的外部电压端子。 由此,获得隔离特性优异的高频开关装置,即使静电浪涌等高电压信号流入装置也难以分解。