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11. 发明申请

US20110254989A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20110254989A1
公开(公告)日：2011-10-20
申请号：US13139855
申请日：2010-01-22
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H01L27/148
摘要： A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, an output register unit 20 that receives the charge from the imaging area 10, a multiplication register unit 40 that multiplies the charge from the output register 20, and at least one charge dispersion means 71 that disperses the charge input to the multiplication register unit 40 in a width direction perpendicular to a transfer direction.
摘要翻译：根据本发明的一个实施例的固态成像装置1是电荷倍增固态成像装置，并且包括根据入射光量产生电荷的成像区域10，接收到的输出寄存器单元20 来自成像区域10的电荷，将来自输出寄存器20的电荷相乘的乘法寄存器单元40和至少一个电荷分散单元71，其将电荷输入分散到垂直于转移的宽度方向的倍增寄存器单元40 方向。

12. 发明申请

US20110186913A1 SOLID STATE IMAGING DEVICE WITH ELECTRON MULTIPLYING FUNCTION 有权
标题翻译：具有电子倍增功能的固态成像装置
公开(公告)号：US20110186913A1
公开(公告)日：2011-08-04
申请号：US12920119
申请日：2010-01-27
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
IPC分类号： H01L27/148
CPC分类号： H01L27/14887 , H01L27/14609 , H01L27/1464 , H01L27/14812 , H01L27/1485 , H01L29/76816
摘要： In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer 2 is thicker at both side portions than in a central region. A pair of overflow drains 1N is formed at a boundary between a central region and both side portions of an N-type semiconductor region 1C. Each overflow drain 1N extends along the electron transfer direction of the multiplication register EM. Overflow gate electrodes G extend from the thin portion to the thick portion of the insulating layer 2. The overflow gate electrodes G are disposed between both ends of each transfer electrode 8 in a longitudinal direction and the insulating layer 2, and they also function as shield electrodes for each electrode 8 (8A and 8B).
摘要翻译：在具有电子倍增功能的固态成像装置中，在与乘法寄存器EM的电子转移方向垂直的截面中，绝缘层2在两侧部比在中央区域更厚。在N型半导体区域1C的中心区域和两侧部分之间的边界处形成一对溢流漏极1N。每个溢流漏极1N沿乘法寄存器EM的电子传输方向延伸。溢流栅电极G从绝缘层2的薄部延伸到厚部。溢流栅电极G沿纵向方向设置在每个转移电极8的两端之间，绝缘层2也起到屏蔽作用每个电极8（8A和8B）的电极。

13. 发明申请

US20110075005A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20110075005A1
公开(公告)日：2011-03-31
申请号：US12990051
申请日：2009-04-22
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shinya Otsuka , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shinya Otsuka , Masaharu Muramatsu
IPC分类号： H04N5/335
CPC分类号： H01L27/14831 , H01L27/14825 , H04N5/37213
摘要： A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3 and first and second shift registers 9, 13. Each photoelectric converting portion 3 has a photosensitive region 15 which generates a charge according to incidence of light and which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 17 which forms a potential gradient increasing along a predetermined direction parallel to the long sides forming the planar shape of the photosensitive region 15, in the photosensitive region, 15. The plurality of photoelectric converting portions 3 are juxtaposed along a direction intersecting with the predetermined direction. The first and second shift registers 9, 13 acquire charges transferred from the respective photoelectric converting portions 3 and transfer them in the direction intersecting with the predetermined direction to output them. This achieves the solid-state imaging device capable of quickly reading out the charge generated in the photosensitive region, without complicating image processing.
摘要翻译：固态成像装置1设置有多个光电转换部分3和第一和第二移位寄存器9,13。每个光电转换部分3具有光敏区域15，其根据光的入射产生电荷，并且具有由两个长边和两个短边组成的近似矩形形状的平面形状以及形成沿着平行于形成感光区域15的平面形状的长边的预定方向增加的电位梯度的电位梯度形成区域17 感光区域15.多个光电转换部分3沿着与预定方向相交的方向并置。第一移位寄存器9和第二移位寄存器13获取从各个光电转换部分3传送的电荷并沿与预定方向相交的方向传送它们以输出它们。这实现了能够快速读出感光区域中产生的电荷的固态成像装置，而不会使图像处理复杂化。

14. 发明申请

US20100188564A1 IMAGING DEVICE HOLDING STRUCTURE AND IMAGING DEVICE 有权
标题翻译：成像装置保持结构和成像装置
公开(公告)号：US20100188564A1
公开(公告)日：2010-07-29
申请号：US12445630
申请日：2007-10-12
申请人： Hiroya Kobayashi , Yasuhito Miyazaki , Masaharu Muramatsu
发明人： Hiroya Kobayashi , Yasuhito Miyazaki , Masaharu Muramatsu
IPC分类号： H04N5/225
CPC分类号： H04N5/2253
摘要： A holding structure 100 for an image pickup device includes a back-incident type image pickup device 1 and a holding member 51 that holds the image pickup element 1, and the image pickup device 1 has an image pickup element 11 that performs imaging and a wiring board 12 electrically connected to the image pickup element 11. The holding member 51 is freely attachably and detachably attached to a side face 27 of the wiring board 12, at each of the opposing side faces 27a, 27a in the wiring board 12, a to-be-fitted portion 28 is formed, and the to-be-fitted portion 28 and a fitting portion 54 formed at the holding member 51 are fitted together. This relieves, even when an impact is applied to the image pickup device 1 during an inspection, delivery, etc., the impact to be applied to the wiring board 12 and the image pickup element 11 by the holding member 51 while suppressing the holding member 51 from coming off. Further, handling of the image pickup device 1 is facilitated, and an unnecessary impact to be applied to the image pickup device 1 is suppressed.
摘要翻译：用于图像拾取装置的保持结构100包括后入射型图像拾取装置1和保持图像拾取元件1的保持构件51，并且图像拾取装置1具有执行成像和布线的图像拾取元件11 基板12电连接到图像拾取元件11.保持构件51在布线板12的每个相对侧面27a，27a处可自由地安装和拆卸地附接到布线板12的侧面，a至被嵌合部28和形成在保持构件51上的嵌合部54嵌合在一起。即使当在检查，传送等期间对图像拾取装置1施加冲击时，也可以通过保持构件51对保持构件51施加的对冲击的影响，同时抑制保持构件来自51 此外，便于图像拾取装置1的处理，并且抑制对图像拾取装置1施加不必要的影响。

15. 发明申请

US20100012820A1 LIGHT DETECTING DEVICE 有权
标题翻译：光检测装置
公开(公告)号：US20100012820A1
公开(公告)日：2010-01-21
申请号：US12444967
申请日：2007-10-09
申请人： Hiroya Kobayashi , Yasuhito Miyazaki , Masaharu Muramatsu
发明人： Hiroya Kobayashi , Yasuhito Miyazaki , Masaharu Muramatsu
IPC分类号： G01J1/44
CPC分类号： H01L31/024 , H01L25/042 , H01L27/14618 , H01L31/0203 , H01L2224/05553 , H01L2224/48091 , H01L2224/4824 , H01L2224/49175 , H04N5/2253 , H01L2924/00014
摘要： In a photodetecting device 3, a wiring board 12 is provided at the front surface side of a photodetecting element 11 so that a first bonding pad region 15 formed on the front surface of the photodetecting element 11 is exposed, and second bonding pads 17B are formed, of the wiring board 12, in the region on a further inner side than first bonding pads 17A. Thereby, in the photodetecting device 3, a forming space for wire bonding can be located at the inside of the photodetecting element 11, so that the wiring board 12 and the photodetecting element 11 can be made almost equal in size. As a result, in the photodetecting device 3, the area that the photodetecting element 11 occupies relative to the photodetecting device 3 can be sufficiently secured, and minimization of the non-sensitive region in the case of a buttable arrangement of the photodetecting devices 3 on a cold plate 2 can be realized.
摘要翻译：在光电检测装置3中，在受光元件11的正面侧设置配线基板12，使得形成在受光元件11的表面上的第一焊盘区域15露出，形成第二接合焊盘17B 在比第一接合焊盘17A更靠内侧的区域中。因此，在光检测装置3中，用于引线接合的形成空间可以位于受光元件11的内部，使得布线板12和光电检测元件11的尺寸几乎相等。结果，在光检测装置3中，可以充分确保光检测元件11相对于受光器件3占有的面积，并且在光检测装置3的可放置配置的情况下，非敏感区域的最小化可以实现冷板2。

16. 发明授权

US5780913A Photoelectric tube using electron beam irradiation diode as anode 失效
标题翻译：光电管采用电子束照射二极管作为阳极
公开(公告)号：US5780913A
公开(公告)日：1998-07-14
申请号：US954616
申请日：1997-10-27
申请人： Masaharu Muramatsu , Motohiro Suyama , Koei Yamamoto
发明人： Masaharu Muramatsu , Motohiro Suyama , Koei Yamamoto
IPC分类号： H01J31/49 , H01L31/115
CPC分类号： H01J31/49
摘要： When light is incident on the photoelectric surface of this electron tube, photoelectrons are emitted. These photoelectrons are accelerated and incident on an electron beam irradiation diode. A reverse voltage of about 100 V is applied to the electron beam irradiation diode to form a depletion region almost throughout an anode layer and near the p-n junction interface of a silicon substrate. The incident accelerated electrons release a kinetic energy in a heavily doped p-type layer having an electron incidence surface and the depleted anode layer to form electron-hole pairs. In this case, since the heavily doped p-type layer having the electron incidence surface is very thin, the energy is hardly released in this layer, and almost all energy is released in the depletion region. Signal charges extracted from the electron-hole pairs formed upon releasing the energy are output as a signal from two electrodes.
摘要翻译：当光入射到该电子管的光电表面上时，发射光电子。这些光电子被加速并入射在电子束照射二极管上。大约100V的反向电压被施加到电子束照射二极管，以在整个阳极层和硅衬底的p-n结界面附近形成耗尽区。事件加速电子在具有电子入射表面和耗尽的阳极层的重掺杂p型层中释放动能以形成电子 - 空穴对。在这种情况下，由于具有电子入射面的重掺杂p型层非常薄，所以在该层中几乎不释放能量，几乎所有能量在耗尽区中释放。从释放能量时形成的电子 - 空穴对提取的信号电荷作为来自两个电极的信号被输出。

17. 发明授权

US09299860B2 Solid state imaging device including photoelectric conversion portion 有权
标题翻译：固态成像装置包括光电转换部分
公开(公告)号：US09299860B2
公开(公告)日：2016-03-29
申请号：US13977976
申请日：2011-11-11
申请人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
发明人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L31/00 , H01L31/02 , H01L27/148
CPC分类号： H01L31/02 , H01L27/14806 , H01L27/14825 , H01L27/14831 , H01L27/14887
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having photosensitive regions 13, and a potential gradient forming portion 3 arranged opposite to the photosensitive regions 13. A planar shape of each photosensitive region 13 is a substantially rectangular shape composed of two long sides and two short sides. The photosensitive regions 13 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 has a first potential gradient forming region to form a potential gradient becoming lower along a second direction from one of the short sides to the other of the short sides, and a second potential gradient forming region to form a potential gradient becoming higher along the second direction. The second potential gradient forming region is arranged next to the first potential gradient forming region in the second direction.
摘要翻译：固态成像装置1设置有具有感光区域13的光电转换部分2和与感光区域13相对设置的电位梯度形成部分3.每个光敏区域13的平面形状是由两个长边和两边。感光区域13在与长边相交的第一方向上并列。电位梯度形成部分3具有第一电位梯度形成区域，以形成沿着从短边中的一个短边到另一个的第二方向变低的电位梯度;以及第二电位梯度形成区域，以形成电位梯度沿着第二个方向变得更高。第二电位梯度形成区域沿着第二方向布置在第一电位梯度形成区域的旁边。

18. 发明授权

US09000492B2 Back-illuminated solid-state image pickup device 有权
标题翻译：背照式固态摄像装置
公开(公告)号：US09000492B2
公开(公告)日：2015-04-07
申请号：US13258680
申请日：2010-03-24
申请人： Hisanori Suzuki , Yasuhito Yoneta , Yasuhito Miyazaki , Masaharu Muramatsu , Koei Yamamoto
发明人： Hisanori Suzuki , Yasuhito Yoneta , Yasuhito Miyazaki , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L27/148 , H01L27/146 , H01L31/0352 , H01L31/0236
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14625 , H01L27/14806 , H01L31/02363 , H01L31/035281
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.
摘要翻译：在背照式固体摄像装置中，包括具有背面侧的光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的电荷转移电极2相对于光入射面，光检测面具有不平坦的表面。通过具有不平坦表面的光检测表面，抑制由不平坦表面反射的光相对于入射光的相位具有散射的相位差并导致相互抵消的干涉光，因此抑制了金属化。因此，可以通过背照式固态图像拾取装置获得高质量的图像。

19. 发明授权

US08947587B2 Imaging device holding structure and imaging device 有权
标题翻译：成像装置保持结构和成像装置
公开(公告)号：US08947587B2
公开(公告)日：2015-02-03
申请号：US12445630
申请日：2007-10-12
申请人： Hiroya Kobayashi , Yasuhito Miyazaki , Masaharu Muramatsu
发明人： Hiroya Kobayashi , Yasuhito Miyazaki , Masaharu Muramatsu
IPC分类号： H04N5/222 , H04N5/225
CPC分类号： H04N5/2253
摘要： A holding structure 100 for an image pickup device includes a back-incident type image pickup device 1 and a holding member 51 that holds the image pickup element 1, and the image pickup device 1 has an image pickup element 11 that performs imaging and a wiring board 12 electrically connected to the image pickup element 11. The holding member 51 is freely attachably and detachably attached to a side face 27 of the wiring board 12, at each of the opposing side faces 27a, 27a in the wiring board 12, a to-be-fitted portion 28 is formed, and the to-be-fitted portion 28 and a fitting portion 54 formed at the holding member 51 are fitted together. This relieves, even when an impact is applied to the image pickup device 1 during an inspection, delivery, etc., the impact to be applied to the wiring board 12 and the image pickup element 11 by the holding member 51 while suppressing the holding member 51 from coming off. Further, handling of the image pickup device 1 is facilitated, and an unnecessary impact to be applied to the image pickup device 1 is suppressed.
摘要翻译：用于图像拾取装置的保持结构100包括后入射型图像拾取装置1和保持图像拾取元件1的保持构件51，并且图像拾取装置1具有执行成像和布线的图像拾取元件11 基板12电连接到图像拾取元件11.保持构件51在布线板12的每个相对侧面27a，27a处可自由地安装和拆卸地附接到布线板12的侧面，a至被嵌合部28和形成在保持构件51上的嵌合部54嵌合在一起。即使当在检查，传送等期间对图像拾取装置1施加冲击时，也可以通过保持构件51对保持构件51施加的对冲击的影响，同时抑制保持构件来自51 此外，便于图像拾取装置1的处理，并且抑制对图像拾取装置1施加不必要的影响。

20. 发明授权

US08466498B2 Solid state image device having a pair of overflow drains extends along the electron transfer direction at a boundary between channel region and channel stop isolation regions of the multiplication register 有权
标题翻译：具有一对溢流漏极的固态图像装置在乘法寄存器的沟道区域和沟道停止隔离区域之间的边界处沿着电子传输方向延伸
公开(公告)号：US08466498B2
公开(公告)日：2013-06-18
申请号：US12920119
申请日：2010-01-27
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shin-ichiro Takagi , Kentaro Maeta , Masaharu Muramatsu
IPC分类号： H01L27/148 , H01L29/765
CPC分类号： H01L27/14887 , H01L27/14609 , H01L27/1464 , H01L27/14812 , H01L27/1485 , H01L29/76816
摘要： In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer 2 is thicker at both side portions than in a central region. A pair of overflow drains 1N is formed at a boundary between a central region and both side portions of an N-type semiconductor region 1C. Each overflow drain 1N extends along the electron transfer direction of the multiplication register EM. Overflow gate electrodes G extend from the thin portion to the thick portion of the insulating layer 2. The overflow gate electrodes G are disposed between both ends of each transfer electrode 8 in a longitudinal direction and the insulating layer 2, and they also function as shield electrodes for each electrode 8 (8A and 8B).
摘要翻译：在具有电子倍增功能的固态成像装置中，在与乘法寄存器EM的电子转移方向垂直的截面中，绝缘层2在两侧部比在中央区域更厚。在N型半导体区域1C的中心区域和两侧部分之间的边界处形成一对溢流漏极1N。每个溢流漏极1N沿乘法寄存器EM的电子传输方向延伸。溢流栅电极G从绝缘层2的薄部延伸到厚部。溢流栅电极G沿纵向方向设置在每个转移电极8的两端之间，绝缘层2也起到屏蔽作用每个电极8（8A和8B）的电极。

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