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11. 发明申请

US20070145392A1 LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES 审中-公开
标题翻译：具有电流阻塞结构的发光装置和制造具有电流阻塞结构的发光装置的方法
公开(公告)号：US20070145392A1
公开(公告)日：2007-06-28
申请号：US11681410
申请日：2007-03-02
申请人： Kevin Haberern , Michael Bergmann , Van Mieczkowski , David Emerson , John Edmond
发明人： Kevin Haberern , Michael Bergmann , Van Mieczkowski , David Emerson , John Edmond
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01S5/0421 , H01S5/2063 , H01S5/2068 , H01S5/32341
摘要： Light emitting devices and methods of fabricating light emitting devices having a current blocking mechanism below the wire bond pad are provided. The current blocking mechanism may be a reduced conduction region in an active region of the device. The current blocking mechanism could be a damage region of a layer on which a contact is formed. The current blocking mechanism could be a Schottky contact between an ohmic contact and the active region of the device. A semiconductor junction, such as a PN junction could also be provided between the ohmic contact and the active region.
摘要翻译：提供了发光器件和制造在引线接合焊盘下方具有电流阻挡机构的发光器件的方法。电流阻塞机构可以是器件的有源区域中的导通区域减小。电流阻塞机构可以是形成触点的层的损伤区域。电流阻塞机制可以是欧姆接触和器件的有源区域之间的肖特基接触。还可以在欧姆接触和有源区之间提供诸如PN结的半导体结。

12. 发明申请

US20050045895A1 Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures 有权
标题翻译：具有量子阱和超晶格的III族氮化物基发光二极管结构，基于III族氮化物的量子阱结构和基于III族氮化物的超晶格结构
公开(公告)号：US20050045895A1
公开(公告)日：2005-03-03
申请号：US10963666
申请日：2004-10-13
申请人： David Emerson , James Ibbetson , Michael Bergmann , Kathleen Doverspike , Michael O'Loughlin , Howard Nordby , Amber Abare
发明人： David Emerson , James Ibbetson , Michael Bergmann , Kathleen Doverspike , Michael O'Loughlin , Howard Nordby , Amber Abare
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/32
摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X
摘要翻译：在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。有源区具有至少一个量子阱结构。量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。还提供了一种III族氮化物基半导体器件，其包括具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期的氮化镓基超晶格，其中0 <= X <1且0 <= Y <1，X 不等于Y.半导体器件可以是具有基于III族氮化物的有源区的发光二极管。有源区可以是多量子阱有源区。

13. 发明申请

US20080038858A1 METHODS OF FABRICATING GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELL AND SUPERLATTICE, GROUP III NITRIDE BASED QUANTUM WELL STRUCTURES AND GROUP III NITRIDE BASED SUPERLATTICE STRUCTURES 有权
标题翻译：基于III型氮化物的发光二极管结构的方法，其具有量子阱和超导体，基于III类氮化物的量子结构和基于III类氮化物的超导结构
公开(公告)号：US20080038858A1
公开(公告)日：2008-02-14
申请号：US11875353
申请日：2007-10-19
申请人： David Emerson , James Ibbetson , Michael Bergmann , Kathleen Doverspike , Michael O'Loughlin , Howard Nordby , Amber Abare
发明人： David Emerson , James Ibbetson , Michael Bergmann , Kathleen Doverspike , Michael O'Loughlin , Howard Nordby , Amber Abare
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/32
摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X
摘要翻译：在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。有源区具有至少一个量子阱狭窄。量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。还提供了一种III族氮化物基半导体器件，其包括具有至少两个交替层的In 1 N 1 Ga 1-X N和In 1 N的纳米氮基超晶格， SUB> Y 1-Y N，其中0 <= X <1且0 <= Y <1，X不等于Y.该半导体器件可以是发光二极管与III族氮化物基活性区。有源区可以是多量子阱有源区。

14. 外观设计

USD672731S1 Light emitting diode 有权
公开(公告)号：USD672731S1
公开(公告)日：2012-12-18
申请号：US29383906
申请日：2011-01-24
申请人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schneider
设计人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schneider

15. 外观设计

USD689830S1 Light emitting diode 有权
公开(公告)号：USD689830S1
公开(公告)日：2013-09-17
申请号：US29383908
申请日：2011-01-24
申请人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schneider
设计人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schneider

16. 外观设计

USD682225S1 Light emitting diode 有权
公开(公告)号：USD682225S1
公开(公告)日：2013-05-14
申请号：US29383910
申请日：2011-01-24
申请人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schnelder
设计人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schnelder

17. 外观设计

USD675581S1 Light emitting diode 有权
公开(公告)号：USD675581S1
公开(公告)日：2013-02-05
申请号：US29396907
申请日：2011-07-08
申请人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schneider
设计人： Michael Bergmann , Kevin Haberern , Matthew Donofrio , Christopher D. Williams , Kevin Shawne Schneider

18. 发明授权

US08558252B2 White LEDs with emission wavelength correction 有权
标题翻译：发光波长校正的白色LED
公开(公告)号：US08558252B2
公开(公告)日：2013-10-15
申请号：US13219486
申请日：2011-08-26
申请人： James Ibbetson , Bernd Keller , Ronan Letoquin , Matthew Donofrio , Michael Bergmann
发明人： James Ibbetson , Bernd Keller , Ronan Letoquin , Matthew Donofrio , Michael Bergmann
IPC分类号： H01L29/18 , H01L29/205 , H01L33/00 , H01L21/00
CPC分类号： H01L33/504 , H01L33/0095 , H01L2933/0041
摘要： Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.
摘要翻译：用于制造具有发射波长校正的LED芯片的半导体器件的方法以及使用这些方法制造的器件。不同的实施方案包括在LED上提供两个或更多个转化材料的涂层或多层的顺序涂覆方法，其可以在晶片级完成。该方法特别适用于制造发出暖白光的LED芯片，其通常需要用一种或多种波长转换材料如磷光体覆盖LED。在一个实施例中，将基础波长转换材料施加到半导体器件。一部分碱转换材料被去除。在应用基底转换材料之前或之后，至少两种不同的调谐波长转换材料也被应用于半导体器件。

19. 发明申请

US20130049021A1 WHITE LEDS WITH EMISSION WAVELENGTH CORRECTION 有权
标题翻译：白光LED发射波长校正
公开(公告)号：US20130049021A1
公开(公告)日：2013-02-28
申请号：US13219486
申请日：2011-08-26
申请人： JAMES IBBETSON , Bernd Keller , Ronan Letoquin , Matthew Donofrio , Michael Bergmann
发明人： JAMES IBBETSON , Bernd Keller , Ronan Letoquin , Matthew Donofrio , Michael Bergmann
IPC分类号： H01L33/50 , H01L21/66
CPC分类号： H01L33/504 , H01L33/0095 , H01L2933/0041
摘要： Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.
摘要翻译：用于制造具有发射波长校正的LED芯片的半导体器件的方法以及使用这些方法制造的器件。不同的实施方案包括在LED上提供两个或更多个转化材料的涂层或多层的顺序涂覆方法，其可以在晶片级完成。该方法特别适用于制造发出暖白光的LED芯片，其通常需要用一种或多种波长转换材料如磷光体覆盖LED。在一个实施例中，将基础波长转换材料施加到半导体器件。一部分碱转换材料被去除。在应用基底转换材料之前或之后，至少两种不同的调谐波长转换材料也被应用于半导体器件。

20. 发明申请

US20060246612A1 Light emitting devices with active layers that extend into opened pits 有权
标题翻译：具有延伸到开放凹坑中的有源层的发光器件
公开(公告)号：US20060246612A1
公开(公告)日：2006-11-02
申请号：US11118987
申请日：2005-04-29
申请人： David Emerson , Michael Bergmann
发明人： David Emerson , Michael Bergmann
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L33/007 , H01L33/32
摘要： Light emitting devices include an active region comprising a plurality of layers and a pit opening region on which the active region is disposed. The pit opening region is configured to expand a size of openings of a plurality of pits to a size sufficient for the plurality of layers of the active region to extend into the pits. In some embodiments, the active region comprises a plurality of quantum wells. The pit opening region may comprise a superlattice structure. The pits may surround their corresponding dislocations and the plurality of layers may extend to the respective dislocations. At least one of the pits of the plurality of pits may originate in a layer disposed between the pit opening layer and a substrate on which the pit opening layer is provided. The active region may be a Group III nitride based active region. Methods of fabricating such devices are also provided.
摘要翻译：发光器件包括包括多个层的有源区和设置有源区的凹坑开口区。凹坑开口区域被配置为将多个凹坑的开口的尺寸扩大到足以使有源区域的多个层延伸到凹坑中的尺寸。在一些实施例中，有源区包括多个量子阱。凹坑开口区域可以包括超晶格结构。凹坑可以围绕其相应的位错，并且多个层可以延伸到相应的位错。多个凹坑中的凹坑中的至少一个凹坑可以起源于设置在凹坑开口层和设置凹坑开口层的基底之间的层。有源区可以是基于III族氮化物的有源区。还提供了制造这种装置的方法。

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