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11. 发明授权

US06797643B2 Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power 失效
标题翻译：使用VHF-RF功率的等离子体增强CVD低k碳掺杂氧化硅膜沉积
公开(公告)号：US06797643B2
公开(公告)日：2004-09-28
申请号：US10279367
申请日：2002-10-23
申请人： Juan Carlos Rocha-Alvarez , Maosheng Zhao , Ying Yu , Shankar Venkataraman , Srinivas D. Nemani , Li-Qun Xia
发明人： Juan Carlos Rocha-Alvarez , Maosheng Zhao , Ying Yu , Shankar Venkataraman , Srinivas D. Nemani , Li-Qun Xia
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/31633
摘要： A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture to the deposition chamber, in which the gas mixture is comprised of one or more cyclic organosilicon compounds, one or more aliphatic compounds and one or more oxidizing gases. The method further includes reacting the gas mixture in the presence of an electric field to form the low dielectric constant film on the semiconductor substrate. The electric field is generated using a very high frequency power having a frequency in a range of about 20 MHz to about 100 MHz.
摘要翻译：在基板上沉积低介电常数膜的方法。在一个实施例中，该方法包括以下步骤：将基板定位在沉积室中，为沉积室提供气体混合物，其中气体混合物由一种或多种环状有机硅化合物，一种或多种脂族化合物和一种或多种脂族化合物组成，更多的氧化气体。该方法还包括在存在电场的情况下使气体混合物反应以在半导体衬底上形成低介电常数膜。使用频率在约20MHz至约100MHz范围内的非常高频率的功率产生电场。

12. 发明授权

US06923189B2 Cleaning of CVD chambers using remote source with cxfyoz based chemistry 失效
标题翻译：使用基于cxfyoz的化学物质的远程源清洁CVD室
公开(公告)号：US06923189B2
公开(公告)日：2005-08-02
申请号：US10346836
申请日：2003-01-16
申请人： Annamalai Lakshmanan , Ju-Hyung Lee , Troy Kim , Maosheng Zhao , Shankar Venkataraman
发明人： Annamalai Lakshmanan , Ju-Hyung Lee , Troy Kim , Maosheng Zhao , Shankar Venkataraman
IPC分类号： B08B7/00 , C23C16/44 , B08B9/093
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method and apparatus for cleaning a processing chamber are provided. The cleaning method includes the use of a remote plasma source to generate reactive species and an in situ RF power to generate or regenerate reactive species. The reactive species are generated from a carbon and fluorine-containing gas and an oxygen source.
摘要翻译：提供一种用于清洁处理室的方法和装置。清洁方法包括使用远程等离子体源来产生反应物种和原位RF功率以产生或再生反应性物质。活性物质由碳和含氟气体和氧源产生。

13. 发明授权

US06914014B2 Method for curing low dielectric constant film using direct current bias 失效
标题翻译：使用直流偏压固化低介电常数膜的方法
公开(公告)号：US06914014B2
公开(公告)日：2005-07-05
申请号：US10342077
申请日：2003-01-13
申请人： Lihua Li , Tzu-Fang Huang , Li-Qun Xia , Juan Carlos Rocha-Alvarez , Maosheng Zhao
发明人： Lihua Li , Tzu-Fang Huang , Li-Qun Xia , Juan Carlos Rocha-Alvarez , Maosheng Zhao
IPC分类号： C23C16/30 , C23C16/56 , H01L21/316 , H01L21/768 , H01L21/3105
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/56 , H01L21/02216 , H01L21/02274 , H01L21/31633 , H01L21/76825 , H01L21/76826
摘要： A method for depositing a low dielectric constant film on a substrate. The method includes depositing a low dielectric constant film comprising silicon, carbon, oxygen and hydrogen on the substrate disposed in a chemical vapor deposition chamber, introducing a gas mixture comprising a hydrogen-containing gas to the chemical vapor deposition chamber, forming a plasma of the gas mixture proximate the low dielectric constant film using a radio frequency power, and applying a direct current bias to at least one of the substrate or a gas distribution plate to cure the low dielectric constant film.
摘要翻译：一种在基板上沉积低介电常数膜的方法。该方法包括在设置在化学气相沉积室中的衬底上沉积包含硅，碳，氧和氢的低介电常数膜，将包含含氢气体的气体混合物引入化学气相沉积室，形成等离子体使用射频功率接近低介电常数膜的气体混合物，并且将至少一个基板或气体分布板施加直流偏压以固化低介电常数膜。

14. 发明授权

US08449678B2 Combinatorial process system 有权
公开(公告)号：US08449678B2
公开(公告)日：2013-05-28
申请号：US12028643
申请日：2008-02-08
申请人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
发明人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
IPC分类号： H01L21/31 , C23C16/458 , C23C16/50 , B65H1/00
CPC分类号： H01L21/32051 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00659 , B01J2219/00745 , B01J2219/00756 , C23C14/042 , C23C14/50 , C23C14/548 , C23C16/45544 , H01L21/67005 , H01L21/6719
摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

15. 发明申请

US20090068849A1 MULTI-REGION PROCESSING SYSTEM AND HEADS 有权
标题翻译：多区域处理系统和头
公开(公告)号：US20090068849A1
公开(公告)日：2009-03-12
申请号：US11965689
申请日：2007-12-27
申请人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao
发明人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/45565 , B05B14/30 , B05B16/80 , B05D1/10 , B05D1/62 , C23C16/4412 , C23C16/45589 , C23C16/4584 , C23C16/4585 , C23C16/4587 , C23C16/50 , Y10S438/942
摘要： The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.
摘要翻译：本发明的各种实施例提供了基板和工艺头在最小空间中访问整个晶片的相对运动，以在基板的各个区域上进行组合处理。这些头使得所描述的室内的现场隔离处理和使用其的方法被描述。

16. 发明申请

US20050252447A1 Gas blocker plate for improved deposition 审中-公开
标题翻译：阻气板用于改善沉积
公开(公告)号：US20050252447A1
公开(公告)日：2005-11-17
申请号：US10843839
申请日：2004-05-11
申请人： Maosheng Zhao , Juan Rocha-Alvarez
发明人： Maosheng Zhao , Juan Rocha-Alvarez
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/45565
摘要： Embodiments of the present invention are directed to a blocker for a gas distribution system for use in semiconductor deposition apparatus. The gas distribution system includes a faceplate having a plurality of faceplate apertures to distribute a gas flow onto a surface of a substrate disposed downstream of the faceplate for film deposition on the substrate; and a blocker disposed upstream of the faceplate. The blocker includes a generally planar blocker surface facing the faceplate and a side wall disposed around a periphery of the blocker surface. The blocker surface includes a plurality of blocker holes to permit gas flow therethrough to the faceplate. The side wall is disposed near an edge of the faceplate and includes a plurality of side apertures to permit gas flow therethrough to the faceplate.
摘要翻译：本发明的实施例涉及一种用于半导体沉积设备中的气体分配系统的阻断器。气体分配系统包括具有多个面板孔的面板，以将气流分布到设置在面板下游的衬底的表面上，用于在衬底上沉积膜; 以及设置在面板上游的阻挡器。阻挡器包括面向面板的大致平面的阻挡面，以及围绕阻挡面的周边设置的侧壁。阻挡表面包括多个阻挡孔，以允许气体流过面板。侧壁设置在面板的边缘附近，并且包括多个侧孔，以允许气体流过面板。

17. 发明授权

US08387563B2 Combinatorial process system 失效
公开(公告)号：US08387563B2
公开(公告)日：2013-03-05
申请号：US13372729
申请日：2012-02-14
申请人： Rick Endo , Jeremy Cheng , Indranil De , James Tsung , Kurt Weiner , Maosheng Zhao
发明人： Rick Endo , Jeremy Cheng , Indranil De , James Tsung , Kurt Weiner , Maosheng Zhao
IPC分类号： H01L21/31 , C23C16/458 , C23C16/50 , B65H1/00
CPC分类号： H01L21/32051 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00659 , B01J2219/00745 , B01J2219/00756 , C23C14/042 , C23C14/50 , C23C14/548 , C23C16/45544 , H01L21/67005 , H01L21/6719
摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

18. 发明申请

US20090061087A1 COMBINATORIAL PROCESS SYSTEM 有权
公开(公告)号：US20090061087A1
公开(公告)日：2009-03-05
申请号：US12028643
申请日：2008-02-08
申请人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
发明人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
IPC分类号： C23C16/00
CPC分类号： H01L21/32051 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00659 , B01J2219/00745 , B01J2219/00756 , C23C14/042 , C23C14/50 , C23C14/548 , C23C16/45544 , H01L21/67005 , H01L21/6719
摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

19. 发明申请

US20120142197A1 COMBINATORIAL PROCESS SYSTEM 失效
公开(公告)号：US20120142197A1
公开(公告)日：2012-06-07
申请号：US13372729
申请日：2012-02-14
申请人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
发明人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao , Jeremy Cheng
IPC分类号： H01L21/31 , C23C16/458 , C23C16/50 , B65H1/00
CPC分类号： H01L21/32051 , B01J19/0046 , B01J2219/0043 , B01J2219/00536 , B01J2219/00596 , B01J2219/00659 , B01J2219/00745 , B01J2219/00756 , C23C14/042 , C23C14/50 , C23C14/548 , C23C16/45544 , H01L21/67005 , H01L21/6719
摘要： A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

20. 发明授权

US08039052B2 Multi-region processing system and heads 有权
标题翻译：多区域处理系统和头
公开(公告)号：US08039052B2
公开(公告)日：2011-10-18
申请号：US11965689
申请日：2007-12-27
申请人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao
发明人： Rick Endo , Kurt Weiner , Indranil De , James Tsung , Maosheng Zhao
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/45565 , B05B14/30 , B05B16/80 , B05D1/10 , B05D1/62 , C23C16/4412 , C23C16/45589 , C23C16/4584 , C23C16/4585 , C23C16/4587 , C23C16/50 , Y10S438/942
摘要： The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.
摘要翻译：本发明的各种实施例提供了基板和工艺头在最小空间中访问整个晶片的相对运动，以在基板的各个区域上进行组合处理。这些头使得所描述的室内的现场隔离处理和使用其的方法被描述。

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