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11. 发明授权

US07776156B2 Side RF coil and side heater for plasma processing apparatus 有权
标题翻译：用于等离子体处理装置的侧面RF线圈和侧面加热器
公开(公告)号：US07776156B2
公开(公告)日：2010-08-17
申请号：US11055191
申请日：2005-02-10
申请人： Maolin Long , David P. Sun
发明人： Maolin Long , David P. Sun
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： C23C16/507 , C23C16/46 , H01J37/321 , H01J37/32174 , H01L21/67069 , H01L21/67109
摘要： A RF plasma generation and temperature control system for an inductively coupled plasma process chamber. The plasma generation system includes a heater that includes an elongated upper heating element substantially parallel to an elongated lower heating element, where the upper and lower heating elements are joined by one or more posts substantially perpendicular to the upper and lower heating elements. The system also including one or more RF coils featuring a crease at points of overlap with the posts. Also, a RF plasma generation system for an inductively coupled plasma process chamber, where the plasma generation system includes a heater thermally coupled to the chamber, and one or more RF coils coupled to the chamber, where the RF coils include a hollow tube having at least one flat side.
摘要翻译：用于感应耦合等离子体处理室的RF等离子体产生和温度控制系统。等离子体产生系统包括加热器，其包括基本上平行于细长的下部加热元件的细长的上部加热元件，其中上部加热元件和下部加热元件由基本上垂直于上部和下部加热元件的一个或多个支柱连接。该系统还包括一个或多个RF线圈，其具有在与柱重叠的点处的折痕。此外，用于感应耦合等离子体处理室的RF等离子体产生系统，其中等离子体发生系统包括热耦合到腔室的加热器和耦合到腔室的一个或多个RF线圈，其中RF线圈包括中空管，最少一个平面。

12. 发明授权

US07531061B2 Gas temperature control for a plasma process 失效
标题翻译：等离子体工艺的气体温度控制
公开(公告)号：US07531061B2
公开(公告)日：2009-05-12
申请号：US10940019
申请日：2004-09-14
申请人： Maolin Long
发明人： Maolin Long
IPC分类号： H01L21/00 , C23C16/00 , C23F1/00 , F25B29/00
CPC分类号： H01J37/3244 , C23C16/452
摘要： A method and system for controlling the temperatures of at least one gas in a plasma processing environment prior to the at least one gas entering a process chamber. This temperature control may vary at different spatial regions of a showerhead assembly (either an individual gas species or mixed gas species). According to one embodiment, an in-line heat exchanger alters (i.e., increases or decreases) the temperature of passing gas species (either high- or low-density) prior to entering a process chamber, temperature change of the gases is measured by determining a temperature of the gas both upon entrance into the in-line heat exchanger assembly and upon exit.
摘要翻译：一种用于在所述至少一种气体进入处理室之前控制等离子体处理环境中的至少一种气体的温度的方法和系统。该温度控制可以在喷头组件（单独的气体种类或混合气体种类）的不同空间区域中变化。根据一个实施例，直列式热交换器在进入处理室之前改变（即，增加或减少）通过的气体种类（高或低密度）的温度，气体的温度变化通过确定气体在进入直列热交换器组件时和出口时的温度。

13. 发明授权

US07782979B2 Base-band digital pre-distortion-based method for improving efficiency of RF power amplifier 有权
标题翻译：基带数字预失真方法，用于提高射频功率放大器的效率
公开(公告)号：US07782979B2
公开(公告)日：2010-08-24
申请号：US10511927
申请日：2003-01-27
申请人： Maolin Long
发明人： Maolin Long
IPC分类号： H04L1/02
CPC分类号： H03F1/02 , H03F1/3241 , H03F2200/331
摘要： The present invention relates to a BDPD-based method for improving efficiency of RF power amplifier, comprising: first, choose key neural network architecture and scale and input initial values of modeling data and network parameters necessary for establishing the neural network model for RF power amplifier; second, correct network parameters with back propagation method and output the neural network model for RF power amplifier when the error meets the criterion; next, solve the pre-distortion algorithm of the RF power amplifier with said model and then carry out pre-distortion processing for the input with the pre-distortion algorithm and feed the input to the RF power amplifier. The present invention can be used to establish a neural network model with adequate accuracy and easy to solve corresponding pre-distortion algorithm for RF power amplifier, in order to improve RF power amplifier efficiency, reduce costs, and suppress out-of-band spectrum leakage effectively through base-band digital pre-distortion technology.
摘要翻译：本发明涉及一种用于提高射频功率放大器效率的基于BDPD的方法，包括：首先，选择关键神经网络架构，对RF功率放大器建立神经网络模型所需的建模数据和网络参数的初始值进行比例和输入 ; 第二，使用反向传播方法正确的网络参数，当误差满足标准时输出射频功率放大器的神经网络模型; 然后用所述模型解决RF功率放大器的预失真算法，然后利用预失真算法对输入进行预失真处理，并将输入馈送到RF功率放大器。本发明可用于建立具有足够准确度的神经网络模型，并且易于解决RF功率放大器的相应的预失真算法，以提高RF功率放大器的效率，降低成本，并抑制带外频谱泄漏有效通过基带数字预失真技术。

14. 发明申请

US20070113976A1 Plasma chamber wall segment temperature control 审中-公开
公开(公告)号：US20070113976A1
公开(公告)日：2007-05-24
申请号：US11654568
申请日：2007-01-18
申请人： Andrej Mitrovic , Maolin Long , Paul Moroz , Steven Fink , William Jones
发明人： Andrej Mitrovic , Maolin Long , Paul Moroz , Steven Fink , William Jones
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67248 , G05D23/1934 , H01J37/32522 , H01L21/67069 , H01L21/67109
摘要： A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

15. 发明授权

US08736175B2 Current control in plasma processing systems 有权
标题翻译：等离子体处理系统中的电流控制
公开(公告)号：US08736175B2
公开(公告)日：2014-05-27
申请号：US12908468
申请日：2010-10-20
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
IPC分类号： H05B31/26
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32935
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统包括用于传导用于维持等离子体的至少一部分的电流的线圈。等离子体处理系统还包括与线圈耦合的传感器，用于测量供电电流的大小以提供幅度测量，而不测量所提供的电流的任何相位角。所提供的电流是用于提供多个电流（例如，包括电流）的电流或总电流。等离子体处理系统还包括与传感器耦合的控制器，用于使用使用幅度测量导出的幅度测量和/或信息来生成指令，而不使用与相位角测量相关的信息，并且用于提供用于控制提供电流和/或总电流的大小。

16. 发明申请

US20100314048A1 ADJUSTING CURRENT RATIOS IN INDUCTIVELY COUPLED PLASMA PROCESSING SYSTEMS 有权
标题翻译：在电感耦合等离子体处理系统中调整电流比
公开(公告)号：US20100314048A1
公开(公告)日：2010-12-16
申请号：US12728112
申请日：2010-03-19
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani
IPC分类号： H05H1/34 , H01L21/3065 , G05F1/00
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3211 , H01J37/32137 , H01J37/32183 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统可以包括用于传导第一电流以维持等离子体的至少第一部分的第一线圈。等离子体处理系统还可以包括用于传导第二电流以维持等离子体的至少第二部分的第二线圈。等离子体处理系统还可以包括用于为第一电流和第二电流供电的电源。等离子体处理系统还可以包括并联电路，用于调节第一电流的电流强度和第二电流的电流强度之一。并联电路可以电耦合在电源和第一线圈和第二线圈中的至少一个之间。并联电路可以包括彼此并联电连接的电感器和可变电容器。

17. 发明申请

US20070131650A1 Plasma chamber wall segment temperature control 审中-公开
标题翻译：等离子室壁段温控
公开(公告)号：US20070131650A1
公开(公告)日：2007-06-14
申请号：US11654564
申请日：2007-01-18
申请人： Andrej Mitrovic , Maolin Long , Paul Moroz , Steven Fink , William Jones
发明人： Andrej Mitrovic , Maolin Long , Paul Moroz , Steven Fink , William Jones
IPC分类号： B44C1/22
CPC分类号： H01L21/67248 , G05D23/1934 , H01J37/32522 , H01L21/67069 , H01L21/67109
摘要： A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.
摘要翻译：一种用于通过多个温度控制系统控制暴露于等离子体的壁内或其他表面内的等离子体室的温度的装置和方法。可以通过独立地控制壁或其它表面的段的温度来控制等离子体室内的等离子体处理。

18. 发明申请

US20070075770A1 Base-band digital pre-distortion-based method for improving efficiency of rf power amplifier 有权
标题翻译：基带数字预失真方法，用于提高射频功率放大器的效率
公开(公告)号：US20070075770A1
公开(公告)日：2007-04-05
申请号：US10511927
申请日：2004-01-27
申请人： Maolin Long
发明人： Maolin Long
IPC分类号： H03F1/26
CPC分类号： H03F1/02 , H03F1/3241 , H03F2200/331
摘要： The present invention relates to a BDPD-based method for improving efficiency of RF power amplifier, comprising: first, choose key neural network architecture and scale and input initial values of modeling data and network parameters necessary for establishing the neural network model for RF power amplifier; second, correct network parameters with back propagation method and output the neural network model for RF power amplifier when the error meets the criterion; next, solve the pre-distortion algorithm of the RF power amplifier with said model and then carry out pre-distortion processing for the input with the pre-distortion algorithm and feed the input to the RF power amplifier. The present invention can be used to establish a neural network model with adequate accuracy and easy to solve corresponding pre-distortion algorithm for RF power amplifier, in order to improve RF power amplifier efficiency, reduce costs, and suppress out-of-band spectrum leakage effectively through base-band digital pre-distortion technology.
摘要翻译：本发明涉及一种用于提高射频功率放大器效率的基于BDPD的方法，包括：首先，选择关键神经网络架构，对RF功率放大器建立神经网络模型所需的建模数据和网络参数的初始值进行比例和输入 ; 第二，使用反向传播方法正确的网络参数，当误差满足标准时输出射频功率放大器的神经网络模型; 然后用所述模型解决RF功率放大器的预失真算法，然后利用预失真算法对输入进行预失真处理，并将输入馈送到RF功率放大器。本发明可用于建立具有足够准确度的神经网络模型，并且易于解决RF功率放大器的相应的预失真算法，以提高RF功率放大器的效率，降低成本，并抑制带外频谱泄漏有效通过基带数字预失真技术。

19. 发明申请

US20060174834A1 Side RF coil and side heater for plasma processing apparatus 有权
标题翻译：用于等离子体处理装置的侧面RF线圈和侧面加热器
公开(公告)号：US20060174834A1
公开(公告)日：2006-08-10
申请号：US11055191
申请日：2005-02-10
申请人： Maolin Long , David Sun
发明人： Maolin Long , David Sun
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/507 , C23C16/46 , H01J37/321 , H01J37/32174 , H01L21/67069 , H01L21/67109
摘要： A RF plasma generation and temperature control system for an inductively coupled plasma process chamber. The plasma generation system includes a heater that includes an elongated upper heating element substantially parallel to an elongated lower heating element, where the upper and lower heating elements are joined by one or more posts substantially perpendicular to the upper and lower heating elements. The system also including one or more RF coils featuring a crease at points of overlap with the posts. Also, a RF plasma generation system for an inductively coupled plasma process chamber, where the plasma generation system includes a heater thermally coupled to the chamber, and one or more RF coils coupled to the chamber, where the RF coils include a hollow tube having at least one flat side.
摘要翻译：用于感应耦合等离子体处理室的RF等离子体产生和温度控制系统。等离子体产生系统包括加热器，其包括基本上平行于细长的下部加热元件的细长的上部加热元件，其中上部加热元件和下部加热元件由基本上垂直于上部和下部加热元件的一个或多个支柱连接。该系统还包括一个或多个RF线圈，其具有在与柱重叠的点处的折痕。此外，用于感应耦合等离子体处理室的RF等离子体产生系统，其中等离子体发生系统包括热耦合到腔室的加热器和耦合到腔室的一个或多个RF线圈，其中RF线圈包括中空管，其具有最少一个平面。

20. 发明申请

US20110115379A1 CURRENT CONTROL IN PLASMA PROCESSING SYSTEMS 有权
标题翻译：等离子体处理系统中的电流控制
公开(公告)号：US20110115379A1
公开(公告)日：2011-05-19
申请号：US12908468
申请日：2010-10-20
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
IPC分类号： H05H1/24
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32935
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统包括用于传导用于维持等离子体的至少一部分的电流的线圈。等离子体处理系统还包括与线圈耦合的传感器，用于测量供电电流的大小以提供幅度测量，而不测量所提供的电流的任何相位角。所提供的电流是用于提供多个电流（例如，包括电流）的电流或总电流。等离子体处理系统还包括与传感器耦合的控制器，用于使用使用幅度测量导出的幅度测量和/或信息来生成指令，而不使用与相位角测量有关的信息，并且用于提供用于控制提供电流和/或总电流的大小。

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