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11. 发明授权

US06383574B1 Ion implantation method for fabricating magnetoresistive (MR) sensor element 失效
标题翻译：用于制造磁阻（MR）传感器元件的离子注入方法
公开(公告)号：US06383574B1
公开(公告)日：2002-05-07
申请号：US09360118
申请日：1999-07-23
申请人： Cherng-Chyi Han , Rong-Fu Xiao , Mao-Min Chen , Po-Kang Wang
发明人： Cherng-Chyi Han , Rong-Fu Xiao , Mao-Min Chen , Po-Kang Wang
IPC分类号： B05D500
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/48 , G11B5/3163 , H01F41/302
摘要： A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.
摘要翻译：形成磁阻（MR）层的方法首先采用形成由磁阻（MR）材料形成的磁阻（MR）层的衬底。然后选择性地离子注入，同时采用离子注入法，磁阻（MR）层形成：（1）由离子注入的磁阻（MR）材料形成的磁阻（MR）层的离子注入部分; 和（2）由磁阻（MR）材料形成的磁阻（MR）层的邻接非离子注入部分，其中离子注入磁阻（MR）材料是非磁阻（MR）材料。该方法可以用于在具有增强的尺寸均匀性的磁阻（MR）传感器元件磁阻（MR）层内形成，特别是增强的覆盖尺寸均匀性。

12. 发明授权

US5488528A Pole tip structure for thin film magnetic heads 失效
标题翻译：用于薄膜磁头的极尖结构
公开(公告)号：US5488528A
公开(公告)日：1996-01-30
申请号：US292630
申请日：1994-08-18
申请人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Neil L. Robertson , Po-Kang Wang
IPC分类号： G11B5/31 , G11B5/147
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/3183
摘要： A horizontal thin film magnetic head is provided which has well aligned pole tips. The head includes first and second seedlayers, the first and second seedlayers being located below a first pole tip and only the second seedlayer being located below the second pole tip. The first pole tip may be capped with a nonmagnetic material such as copper. A very narrow sidegap is employed between the first and second pole tips.
摘要翻译：提供了具有良好对准的极尖的水平薄膜磁头。头部包括第一和第二种子层，第一和第二种子层位于第一极端部下方，并且仅第二种子层位于第二极尖端下方。第一极尖可以用诸如铜的非磁性材料加盖。在第一和第二极尖之间使用非常窄的侧隙。

13. 发明授权

US5285339A Magnetoresistive read transducer having improved bias profile 失效
标题翻译：具有改进的偏置轮廓的磁阻读取传感器
公开(公告)号：US5285339A
公开(公告)日：1994-02-08
申请号：US843702
申请日：1992-02-28
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Ching H. Tsang , Po-Kang Wang
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3903
摘要： An MR read transducer having passive end regions separated by a central active region comprises an MR layer made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer is adjacent to but spaced from the MR layer in the central region only, and the soft magnetic bias layer is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions only, and the means for producing the longitudinal bias comprise a layer made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.
摘要翻译：具有由中心有源区域分离的无源端区域的MR读取传感器包括由具有低单轴磁各向异性的材料制成的MR层。软磁偏置层仅与中心区域中的MR层相邻但间隔开，并且软磁偏置层由具有高单轴磁各向异性的材料制成。仅在每个端部区域中直接产生纵向偏压，并且用于产生纵向偏压的装置包括由具有高单轴磁各向异性的材料制成的层。单轴各向异性的控制可以通过选择适当的磁致伸缩材料或固有单轴各向异性来实现。

14. 发明授权

US06608737B2 Method to make a stitched writer for a giant magneto-resistive head 失效
标题翻译：为巨型磁阻头制作缝合笔记的方法
公开(公告)号：US06608737B2
公开(公告)日：2003-08-19
申请号：US10266664
申请日：2002-10-08
申请人： Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wang , Moris Musa Dovek , Gene Michael Sandler , Jen-Wei C. Koo
发明人： Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wang , Moris Musa Dovek , Gene Michael Sandler , Jen-Wei C. Koo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , Y10T29/49046
摘要： A giant magneto-resistive head is provided which includes a novel high data-rate stitched pole inductive magnetic write head. The write head incorporates a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. The spacer layer shortens the throat height of the write head, reduces its saturation write current, and improves its overwrite and side erasure performance.
摘要翻译：提供了一种巨型磁阻头，它包括一种新颖的高数据速率缝合磁极感应磁写头。写磁头包括从磁极尖端凹入的非磁性间隔层和磁极轭。间隔层缩短写头的喉部高度，降低其饱和写入电流，并提高其覆盖和侧面擦除性能。

15. 发明授权

US06469874B1 Method to make a stitched writer for a giant magneto-resistive head 失效
标题翻译：为巨型磁阻头制作缝合笔记的方法
公开(公告)号：US06469874B1
公开(公告)日：2002-10-22
申请号：US09523993
申请日：2000-03-13
申请人： Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wang , Moris Musa Dovek , Gene Michael Sandler , Jeu-Wei C. Koo
发明人： Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wang , Moris Musa Dovek , Gene Michael Sandler , Jeu-Wei C. Koo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , Y10T29/49046
摘要： A high data-rate stitched pole inductive magnetic write head incorporating a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. Said spacer layer is deposited as part of a self-aligned, patterned photoresist process, wherein the spacer layer is deposited first and the P2 portion of the upper pole assembly is then plated over it to form the pole tip configuration. Increasing the thickness of the spacer layer, while keeping it within a specified tolerance range, allows the upper stitched P3 portion of the pole piece to be recessed relative to the tip of P2. The spacer layer shortens throat height, reduces saturation write current, and improves overwrite and side erasure performance.
摘要翻译：包含非磁性间隔层的高数据速率缝合磁极感应磁性写入头和从磁极尖端凹入的磁极轭。所述间隔层沉积为自对准的图案化光刻胶工艺的一部分，其中首先沉积间隔层，然后将上极组件的P2部分电镀在其上以形成极尖构型。增加间隔层的厚度，同时将其保持在规定的公差范围内，允许极片的上缝合P3部分相对于P2的尖端凹入。间隔层缩短喉部高度，降低饱和写入电流，并提高覆盖和侧面擦除性能。

16. 发明授权

US06393692B1 Method of manufacture of a composite shared pole design for magnetoresistive merged heads 失效
标题翻译：用于磁阻合并头的复合共轭极设计方法
公开(公告)号：US06393692B1
公开(公告)日：2002-05-28
申请号：US09283840
申请日：1999-04-01
申请人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei-Wei Chang
发明人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei-Wei Chang
IPC分类号： H04R3100
CPC分类号： G11B5/3912 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.
摘要翻译：合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。在第一屏蔽层上形成具有磁阻头的读取间隙层。共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。在共享极的第一高磁矩极点上形成写间隙层。上极包括写间隙层上的高磁矩极点层。

17. 发明授权

US06373667B1 Single stripe magnetoresistive (MR) head 失效
标题翻译：单条磁阻（MR）头
公开(公告)号：US06373667B1
公开(公告)日：2002-04-16
申请号：US09637208
申请日：2000-08-14
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
摘要翻译：一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。首先提供基板。在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。软相邻层（SAL）的第一表面接触电介质层的第二表面。最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

18. 发明授权

US5452165A Close packed magnetic head linear array 失效
标题翻译：封闭磁头线性阵列
公开(公告)号：US5452165A
公开(公告)日：1995-09-19
申请号：US214902
申请日：1994-03-16
申请人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Denny D. Tang , Po-Kang Wang
发明人： Mao-Min Chen , Kochan Ju , Mohamad T. Krounbi , Denny D. Tang , Po-Kang Wang
IPC分类号： G11B5/008 , G11B5/012 , G11B5/31 , G11B5/48 , G11B5/56 , G11B5/584 , G11B5/29
CPC分类号： G11B5/3103 , G11B5/3183 , G11B5/4886 , G11B5/4893 , G11B5/56 , G11B5/584 , G11B5/00817 , G11B5/012
摘要： The present invention includes a plurality of thin film magnetic heads which are arranged in a linear array with a spacing D between adjacent heads. The pole pieces of the magnetic heads are positioned in a side by side relationship in contrast to the normal pancake type of magnetic head. The linear array is angled at a skew angle .theta. with respect to the direction of travel of the magnetic medium. The track pitch is then D sin .theta.. The track width is substantially equal to the thickness of the pole tips P1T and P2T of the magnetic heads. This thickness can be in the order of 3 .mu.m. With such a pole tip thickness the track pitch of each magnetic head in the linear array can be 3-4 .mu.m. A plurality of narrow data tracks can then be provided with minimum pitch by a corresponding number of magnetic heads. The write signals are simultaneously fed to the heads or the read signals are simultaneously fed to the heads. This allows high data rates to be processed. The invention also provides different azimuth between adjacent heads to minimize cross talk between the tracks caused by track misregistration. Additional magnetic heads can be employed for servo control as needed.
摘要翻译：本发明包括多个薄膜磁头，其以相邻磁头之间的间隔D布置成线性阵列。与正常的煎饼型磁头相反，磁头的极片与并排的关系定位。线性阵列相对于磁性介质的行进方向以偏斜角θ成角度。轨道间距为Dsinθ。轨道宽度基本上等于磁头的极尖P1T和P2T的厚度。该厚度可以在3μm左右。具有这样的极尖厚度，线阵列中每个磁头的轨道间距可以是3-4μm。然后可以通过相应数量的磁头以最小间距来提供多个窄数据轨道。写入信号被同时馈送到头部，或者读取信号被同时馈送到头部。这样可以处理高数据速率。本发明还提供相邻头部之间的不同方位角，以最小化由轨道重合失调引起的轨道之间的串扰。可根据需要使用额外的磁头进行伺服控制。

19. 发明授权

US5283942A Sacrificial layer planarization process for fabricating a narrow thin film inductive head 失效
标题翻译：用于制造窄薄膜感应头的牺牲层平坦化工艺
公开(公告)号：US5283942A
公开(公告)日：1994-02-08
申请号：US998085
申请日：1992-12-29
申请人： Mao-Min Chen , Jyh-Shuey J. Lo , Po-Kang Wang
发明人： Mao-Min Chen , Jyh-Shuey J. Lo , Po-Kang Wang
IPC分类号： G11B5/31 , G11B5/42
CPC分类号： G11B5/3163 , G11B5/3116 , Y10T29/49046 , Y10T29/49052
摘要： A process for producing a planar thin film magnetic head wherein a sacrificial layer is introduced to provide control of the gap planarization procedure. Unbounded planar layers of lower pole-tip material and nonmagnetic gap material are first deposited and covered with a sacrificial layer that may be selectively removed by solvent. A critical layer island is then formed by etching the excess, thereby ensuring ideal planar characteristics at the edges of the critical gap layer. Following island formation, the entire assembly is covered with a nonmagnetic insulating layer and lapped or etched smooth. This planarization process is adjusted to end in the sacrificial layer. The remaining sacrificial layer material is then removed by solvent, a step that not only ensures the integrity of the underlying critical gap and pole layers but also creates the upper step needed for staggered pole-tip and conformal pole-tip head configurations.
摘要翻译：一种制造平面薄膜磁头的方法，其中引入牺牲层以提供间隙平坦化过程的控制。首先沉积下极尖材料和非磁性间隙材料的无界平面层，并用可以通过溶剂选择性去除的牺牲层覆盖。然后通过蚀刻过量形成临界层岛，从而确保在临界间隙层的边缘处的理想平面特性。随着岛形成，整个组件被非磁性绝缘层覆盖并且被研磨或蚀刻光滑。该平坦化处理被调整为在牺牲层中结束。然后通过溶剂去除剩余的牺牲层材料，该步骤不仅确保了下面的关键间隙和极层的完整性，而且产生了交错的极尖和共形极尖头构造所需的上部步骤。

20. 发明授权

US07012789B2 Composite shared pole design for magnetoresistive merged heads 失效
标题翻译：用于磁阻合并头的复合共享极设计
公开(公告)号：US07012789B2
公开(公告)日：2006-03-14
申请号：US10131675
申请日：2002-04-24
申请人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei Wei Chang
发明人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei Wei Chang
IPC分类号： G11B5/127
CPC分类号： G11B5/3912 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.
摘要翻译：合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。在第一屏蔽层上形成具有磁阻头的读取间隙层。共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。在共享极的第一高磁矩极点上形成写间隙层。上极包括写间隙层上的高磁矩极点层。

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