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    • 20. 发明授权
    • Cyanuric fluoride and related compounds for anisotropic etching
    • 氰化氟和相关化合物用于各向异性蚀刻
    • US06508948B2
    • 2003-01-21
    • US09880157
    • 2001-06-13
    • Brian Scott FelkerRonald Martin Pearlstein
    • Brian Scott FelkerRonald Martin Pearlstein
    • H01L21302
    • H01L21/3065H01L21/30621
    • A method for etching features into a substrate by removing substrate material from selected areas while leaving the substrate substantially unaffected in other areas is provided including the steps of providing the substrate to be etched into a process chamber, providing a patterned mask on the substrate as a guide for selective removal of the substrate, the substrate having a mask area and mask-free area, introducing a chemical species of halogenated heterocylic hydrocarbons into the process chamber, applying excitation energy to the process chamber to cause the chemical species to dissociate and form reactive ions and neutral species, and maintaining an electric potential gradient in an area adjacent the substrate to impose directionality and anisotropy to the etch.
    • 提供了一种通过从选定区域去除衬底材料而将衬底基本上不受其它区域影响而将特征蚀刻到衬底中的方法,包括以下步骤:将要蚀刻的衬底提供到处理室中,在衬底上提供图案化掩模作为 用于选择性去除衬底的指导,衬底具有掩模区域和无掩模区域,将卤化杂环烃的化学物质引入到处理室中,向处理室施加激发能以使化学物质解离并形成反应性 离子和中性物质,并且在邻近衬底的区域中保持电势梯度,以对蚀刻施加方向性和各向异性。