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    • 11. 发明授权
    • Antenna apparatus
    • 天线装置
    • US5926136A
    • 1999-07-20
    • US852599
    • 1997-05-07
    • Masataka OhtsukaYoshihiko KonishiMakoto MatsunagaShintaro Nakahara
    • Masataka OhtsukaYoshihiko KonishiMakoto MatsunagaShintaro Nakahara
    • H01Q15/08H01Q1/32H01Q3/01H01Q3/02H01Q9/04H01Q13/08
    • H01Q9/0407H01Q3/02H01Q9/0414
    • In an antenna apparatus in which n dielectric layers with .epsilon..sub.r1 -.epsilon..sub.rn in dielectric constants are respectively stacked between a ground plate and a major radiating conductor, the thickness t.sub.1 -t.sub.n of the dielectric layers are determined so as to satisfy substantially the following equations:(t.sub.1 +t.sub.2 + . . . +t.sub.n)/(t.sub.1 /.epsilon..sub.r1 +t.sub.2 /.epsilon..sub.r2 + . . . +t.sub.n /.epsilon..sub.rn)=.epsilon..sub.reff, andt.sub.1 +t.sub.2 + . . . t.sub.n =t.sub.minwith respect to a dielectric constant .epsilon..sub.reff of the antenna defined for a desired beam width, and the minimum value t.sub.min of the dielectric layers capable of ensuring a desired operation band and low reflection losses in this dielectric constant .epsilon..sub.reff. Thus, the thinnest antenna structure which can ensure a desired radiation in directions of low elevation angles, and desired operation bands and low reflection losses can be made.
    • 在其中介电常数中的ε1〜ε1的n个电介质层分别层叠在接地板和主辐射导体之间的天线装置中,电介质层的厚度t1-tn被确定为基本上满足以下等式 :(t1 + t2 + ... + tn)/(t1 / epsilon r1 + t2 / epsilon r2 + ... + tn / epsilon rn)=εreff和t1 + t2 +。 。 。 相对于为期望波束宽度定义的天线的介电常数εreff,以及能够确保期望的操作频带的介电层的最小值tmin和在该介电常数εref中的低反射损耗,tn = tmin。 因此,可以制造能够确保在低仰角方向上期望的辐射以及期望的操作带和低反射损耗的最薄的天线结构。
    • 19. 发明授权
    • Stripline diode phase shifter
    • 带状二极管移相器
    • US4331942A
    • 1982-05-25
    • US93960
    • 1979-11-14
    • Makoto MatsunagaAkihito Mizobuchi
    • Makoto MatsunagaAkihito Mizobuchi
    • H01P1/185
    • H01P1/185
    • A stripline diode phase shifter in which plural hybrid couplers, one for each stage, are connected in series with one another with no bias blocking means disposed between the hybrid couplers to thereby eliminate much loss and unwanted reflections. At least one DC cut is coupled between each of hybrid couplers and a diode loading line. A PIN diode is coupled to a second terminal of the diode loading line. The diode loading line is constructed as a .lambda./4 impedance conversion line section and a diode loading line section coupled in series with the length of the diode loading line section being set such that the phase of reflection voltage from the diode is equal in magnitude but different in sign at the connecting point of the diode loading line section and the .lambda./4 impedance conversion line section.
    • 带状线二极管移相器,其中多个混合耦合器(每个级用于一个)彼此串联连接,没有偏置阻挡装置设置在混合耦合器之间,从而消除大量的损耗和不希望的反射。 每个混合耦合器和二极管负载线之间至少连接一个直流切割。 PIN二极管耦合到二极管负载线的第二端。 二极管负载线被构造为λ/ 4阻抗转换线部分,并且二极管负载线部分与二极管负载线路部分的长度串联耦合,使得来自二极管的反射电压的相位的幅度相等,但是 在二极管负载线路部分和λ/ 4阻抗转换线路部分的连接点处的符号不同。