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11. 发明申请

WO8906444A3 VERTICAL POWER TRANSISTOR AND FABRICATION METHODS 审中-公开
标题翻译：垂直功率晶体管和制造方法
公开(公告)号：WO8906444A3
公开(公告)日：1989-09-08
申请号：PCT/US8804703
申请日：1988-12-29
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , RABE STEVEN , HOLLIS MARK A , HARRIS CHRISTOPHER T , NICHOLS KIRBY B
IPC分类号： H01L21/28 , H01L21/335 , H01L29/06 , H01L29/41 , H01L29/737 , H01L29/772 , H01L29/80 , H01L21/285 , H01L21/31 , H01L21/76 , H01L29/08 , H01L29/40 , H01L29/72
CPC分类号： H01L29/66454 , H01L21/28 , H01L29/0649 , H01L29/0692 , H01L29/41 , H01L29/7371 , H01L29/7722
摘要： A power permeable base transistor comprising: a base layer formed as comb structures with grating teeth (50, 52, 54, 56) of the combs extending into active regions (34, 36, 38, 40) of semiconductor material and extended active regions (34, 36, 38, 40) separated by inactive regions (35, 37, 39, 41, 43) over which collector contacts (24, 26, 28) extend. These features improve heat dissipation in operation. Current density can also be reduced by provision of thick gold collector contacts (24, 26, 28). Large devices have digitated base layers. A processing method of forming a layer of material having a pattern of high resolution portions and lesser resolution portions, comprising the steps of sputtering a uniform layer of tungsten, forming a nickel mask over the tungsten by both X-ray and photolithography techniques, and etching the tungsten exposed by the nickel mask. The resulting patterned layer can be the aforesaid comb structure. A method of forming alloyed contacts with partial ohmic contact to a semiconductor layer having proton bombarded insulating regions formed therein. A heterojuncction bipolar transistor with extended active regions (152, 154) separated by inactive regions (132) over which collector contacts (144, 146) extend is also disclosed.

12. 发明专利

DE3177317T2 未知
公开(公告)号：DE3177317T2
公开(公告)日：1999-02-25
申请号：DE3177317
申请日：1981-04-06
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , FAN JOHN C C , MCCLELLAND ROBERT W
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/043 , H01L31/0687 , H01L31/18 , H01S5/02 , C30B25/18

13. 发明专利

CA1150807A SHALLOW HOMOJUNCTION SOLAR CELLS 未知
公开(公告)号：CA1150807A
公开(公告)日：1983-07-26
申请号：CA408201
申请日：1982-07-27
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , CHAPMAN RALPH L , FAN JOHN C C , MCCLELLAND ROBERT W
IPC分类号： H01L31/0693 , H01L31/074 , H01L31/18 , H01L31/04
摘要： The disclosure teaches a method of applying an electrical contact and an anodic antireflection coating to an n+ layer of a direct gap semiconductor device. In accordance with the invention, a metal contact is applied to the n+ type layer. The metal contact must be anodizable, Thereafter, the n+ layer is anodized whereby its thickness is reduced and an antireflection layer is formed thereover. The anodizable metal may comprise tin.

14. 发明公开

EP0034166A4 SEMICONDUCTOR EMBEDDED LAYER TECHNOLOGY. 失效
标题翻译：嵌入式技术用于半导体层。
公开(公告)号：EP0034166A4
公开(公告)日：1984-04-27
申请号：EP80901688
申请日：1981-02-24
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , ALLEY GARY D , LINDLEY WILLIAM T , MURPHY R ALLEN
IPC分类号： H01L29/73 , H01L21/20 , H01L21/331 , H01L21/335 , H01L21/74 , H01L23/482 , H01L23/52 , H01L23/535 , H01L29/10 , H01L29/772 , H01L29/80 , H01L29/92 , H01L29/48 , H01L23/48 , H01L27/02 , H01L29/06
CPC分类号： H01L29/66424 , H01L21/02395 , H01L21/02532 , H01L21/02546 , H01L21/02639 , H01L21/743 , H01L23/4824 , H01L23/52 , H01L23/535 , H01L28/40 , H01L29/7722 , H01L2924/0002 , H01L2924/3011 , Y10S148/164 , H01L2924/00
摘要： A permeable base transistor (30) including a metal base layer (34) embedded in a semiconductor crystal (32) to separate collector (38) and emitter (40) regions and form a Schottky barrier with each. The metal base layer has at least one opening (37) through which the crystal semiconductor (32) joins the collector (38) and emitter (40) regions. Ohmic contacts (42, 44) are made to the emitter (40) and collector (38) regions. The width of all openings (37) in the base layer (34) is of the order of the zero bias depletion width corresponding to the carrier concentration in the opening. The thickness of the metal layer (34) is in the order of 10% if this zero bias depletion width. As a result, a potential barrier in each opening limits current flow over the lower portion of the bias range. With increasing forward base bias the potential in the openings, which is lower than along the metal of the base layer (34), is lowered sufficiently to permit substantial increase in the barrier limited current flow from the collector (38) to emitter (40). A method of fabricating this transistor as well as methods for forming integrated circuit structures are also disclosed. Metal and other layers may be selectively embedded in semiconductor crystal. Embedded metal layers may serve as interconnections between devices. Devices may be in a stacked configuration.

15. 发明公开

EP0049286A4 METHODS OF PRODUCING SHEETS OF CRYSTALLINE MATERIAL AND DEVICES AMDE THEREFROM. 失效
标题翻译：生产工艺叶晶体材料和产生的那些器件。
公开(公告)号：EP0049286A4
公开(公告)日：1982-08-05
申请号：EP81901098
申请日：1981-04-06
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , FAN JOHN C C , MCCLELLAND ROBERT W
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/0687 , H01L31/18 , H01S5/02 , H01L21/36
CPC分类号： H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02002 , H01L21/02381 , H01L21/02461 , H01L21/02463 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2221/68318 , H01L2924/0002 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/902 , Y10S117/904 , Y10S117/905 , Y10S117/915 , Y10S148/026 , Y10S148/048 , Y10S148/054 , Y10S148/09 , Y10S148/135 , Y10S438/977 , H01L2924/00
摘要： A method of producing sheets of crystalline material, wherein a growth mask is formed upon a crystallization substrate so as to leave areas of the substrate exposed and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is separated so that the substrate can be reused, if desired. To separate the sheet from the crystallization substrate, a new substrate is applied to the sheet of crystalline material and then the new sheet and substrate are together separated from the crystallization substrate.

16. 发明公开

EP0011629A4 SHALLOW-HOMOJUNCTION SOLAR CELLS. 失效
标题翻译：太阳能电池肤浅HOMO过渡。
公开(公告)号：EP0011629A4
公开(公告)日：1980-10-17
申请号：EP79900329
申请日：1979-10-23
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , CHAPMAN RALPH L , FAN JOHN C C , MCCLELLAND ROBERT W
IPC分类号： H01L31/04 , H01L31/068 , C25D5/00 , C25D11/32 , H01L31/06
CPC分类号： H01L31/068 , Y02E10/547
摘要： Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semi conductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n+/p/p+ structure (26, 24, 22) in which the n+ top layer (26) is limited to a thickness which permits significant carrier generation to occur in a lower semiconductor layer (24). An antireflection coating (28) is applied over the n+ top layer (26), and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.

17. 发明专利

DE3177317D1 未知
公开(公告)号：DE3177317D1
公开(公告)日：1998-08-20
申请号：DE3177317
申请日：1981-04-06
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , FAN JOHN C C , MCCLELLAND ROBERT W
IPC分类号： C30B19/00 , C30B25/02 , C30B25/04 , C30B33/00 , H01L21/20 , H01L21/263 , H01L21/84 , H01L25/04 , H01L31/04 , H01L31/042 , H01L31/043 , H01L31/0687 , H01L31/18 , H01S5/02 , C30B25/18

18. 发明专利

DE3071962D1 SEMICONDUCTOR EMBEDDED LAYER TECHNOLOGY 未知
公开(公告)号：DE3071962D1
公开(公告)日：1987-06-04
申请号：DE3071962
申请日：1980-08-07
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , ALLEY GARY D , LINDLEY WILLIAM T , MURPHY R ALLEN
IPC分类号： H01L29/73 , H01L21/20 , H01L21/331 , H01L21/335 , H01L21/74 , H01L23/482 , H01L23/52 , H01L23/535 , H01L29/10 , H01L29/772 , H01L29/80 , H01L29/92 , H01L29/48 , H01L23/48 , H01L27/02 , H01L29/06

19. 发明申请

WO9926333A2 MICROELECTRO-MECHANICAL SYSTEM ACTUATOR DEVICE AND RECONFIGURABLE CIRCUITS UTILIZING SAME 审中-公开
标题翻译：微电子机械系统执行器装置和利用相同的可重构电路
公开(公告)号：WO9926333A2
公开(公告)日：1999-05-27
申请号：PCT/US9824344
申请日：1998-11-13
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , DRANGMEISTER RICHARD G , PARR ROBERT J , KUSHNER LAWRENCE J
IPC分类号： B81B3/00 , B81C99/00 , H01H59/00 , H01P1/12 , H01P1/203 , H01P5/04 , H02N
CPC分类号： B81B3/0021 , B81B2201/014 , B81B2203/0118 , B81C1/00214 , H01G5/18 , H01G5/40 , H01H59/0009 , H01H2059/0081 , H01P1/12 , H01P1/20327 , H01P1/20363 , H01P1/20381 , H01P1/2039 , H01P5/04
摘要： A microelectro-mechanical device which includes a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode. The device includes first and second electrically conductive regions which are isolated from one another by the fixed electrode. The moveable electrode moves to cover the fixed electrode and to electrically couple to the second conductive region, thus electrically coupling the first and second conductive regions, in response to a potential being applied across the fixed and moveable electrodes. The fixed electrode is transparent to electromagnetic signals or waves and the moveable electrode impedes or allows transmission of electromagnetic signals or waves. In one embodiment of the invention, the fixed and moveable electrodes are configured within an array of similar devices, and each device or groups of devices in the array are individually addressable to actuate the moveable electrodes. In another embodiment of the invention, there is provided a reconfigurable circuit including an array of actuatable devices which are addressed individually or in selected groups, each of the actuatable devices having a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode.
摘要翻译：一种微电子机械装置，其特征在于，在基板上形成固定电极，所述固定电极具有透明高电阻层和在规定方向上形成有各向异性应力的可动电极，并与所述固定电极相邻配置。该装置包括通过固定电极彼此隔离的第一和第二导电区域。响应于在固定电极和可移动电极之间施加电势，可移动电极移动以覆盖固定电极并电耦合到第二导电区域，从而电耦合第一导电区域和第二导电区域。固定电极对电磁信号或波而言是透明的，并且可移动电极阻止或允许传输电磁信号或波。在本发明的一个实施例中，固定和可移动电极被配置在类似装置的阵列内，并且阵列中的每个装置或多个装置组可独立寻址以致动可移动电极。在本发明的另一个实施例中，提供了一种可重新配置的电路，其包括可单独寻址或以选定组寻址的可致动装置阵列，每个可致动装置具有形成在衬底上的固定电极，所述固定电极包括透明的高以及在预定方向上形成有各向异性应力并且与固定电极相邻设置的可移动电极。

20. 发明专利

CA2163981A1 SPATIAL LIGHT MODULATOR 未知
公开(公告)号：CA2163981A1
公开(公告)日：1995-01-12
申请号：CA2163981
申请日：1993-07-02
申请人： MASSACHUSETTS INST TECHNOLOGY
发明人： BOZLER CARL O , RABE STEVEN
IPC分类号： G02B26/08 , G02B26/02 , G09F9/37
摘要： A spatial light modulator formed of a moveable electrode (30) which is dispo sed opposite a fixed electrode (12) and is biased to roll in a preferred direction upon application of an electric field across t he electrodes to produce a light valve or light shutter. In one embodiment, the moveable electrode is restrained at one end and coils about the fixed end in a preferred roll direction. The bias is achieved by inducing anisotropic stress or anisotropic stiffness.

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