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11. 发明申请

US20120108067A1 Edge Bead Remover For Coatings 审中-公开
标题翻译：用于涂料的边缘珠去除剂
公开(公告)号：US20120108067A1
公开(公告)日：2012-05-03
申请号：US12915950
申请日：2010-10-29
申请人： Mark O. Neisser , Srinivasan Chakrapani , Munirathna Padmanaban , Ralph R. Dammel
发明人： Mark O. Neisser , Srinivasan Chakrapani , Munirathna Padmanaban , Ralph R. Dammel
IPC分类号： H01L21/311 , G03F7/42
CPC分类号： G03F7/168 , C11D3/373 , C11D3/3765 , C11D3/43 , C11D7/5022 , C11D11/0047 , G03F7/2041
摘要： The invention relates to an edge bead remover composition for an organic film disposed on a substrate surface, comprising an organic solvent and at least one polymer having a contact angle with water greater than 70°. The invention also relates to a process for using the composition as an edge bead remover for an organic film.
摘要翻译：本发明涉及一种用于有机膜的边缘珠粒去除组合物，其用于设置在基材表面上，包括有机溶剂和至少一种与水的接触角大于70°的聚合物。本发明还涉及使用该组合物作为有机膜的边缘珠去除剂的方法。

12. 发明申请

US20090253080A1 Photoresist Image-Forming Process Using Double Patterning 审中-公开
标题翻译：使用双重图案的光刻胶图像形成过程
公开(公告)号：US20090253080A1
公开(公告)日：2009-10-08
申请号：US12061061
申请日：2008-04-02
申请人： Ralph R. Dammel , David Abdallah , Eric Alemy , Munirathna Padmanaban
发明人： Ralph R. Dammel , David Abdallah , Eric Alemy , Munirathna Padmanaban
IPC分类号： G03F7/30
CPC分类号： G03F7/0035 , G03F7/40
摘要： A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) imagewise exposing the second photoresist; and, g) developing the imagewise exposed second photoresist to form a second photoresist pattern between the first photoresist pattern, thereby providing a double photoresist pattern.
摘要翻译：一种在器件上形成光致抗蚀剂图案的工艺，包括： a）从第一光致抗蚀剂组合物在衬底上形成第一光致抗蚀剂层; b）成像曝光第一光致抗蚀剂; c）显影第一光致抗蚀剂以形成第一光致抗蚀剂图案; d）用包含至少2个氨基（NH 2）基团的硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的第一光致抗蚀剂图案; e）在包含来自第二光致抗蚀剂组合物的硬化的第一光致抗蚀剂图案的衬底的区域上形成第二光致抗蚀剂层; f）成像曝光第二光致抗蚀剂; 以及g）显影所述成像曝光的第二光致抗蚀剂以在所述第一光致抗蚀剂图案之间形成第二光致抗蚀剂图案，从而提供双光致抗蚀剂图案。

13. 发明授权

US07595141B2 Composition for coating over a photoresist pattern 有权
标题翻译：用于在光致抗蚀剂图案上涂覆的组合物
公开(公告)号：US07595141B2
公开(公告)日：2009-09-29
申请号：US10973633
申请日：2004-10-26
申请人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel
发明人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/40
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.
摘要翻译：本发明涉及包含含有氨基的聚合物的光致抗蚀剂图案的水性涂料组合物。本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分不与去除溶液反应的涂料。

14. 发明授权

US6114085A Antireflective composition for a deep ultraviolet photoresist 有权
标题翻译：用于深紫外光致抗蚀剂的抗反射组合物
公开(公告)号：US6114085A
公开(公告)日：2000-09-05
申请号：US195057
申请日：1998-11-18
申请人： Munirathna Padmanaban , Ralph R. Dammel , Stanley A. Ficner , Joseph E. Oberlander , John P. Sagan
发明人： Munirathna Padmanaban , Ralph R. Dammel , Stanley A. Ficner , Joseph E. Oberlander , John P. Sagan
IPC分类号： G03F7/11 , G03F7/09 , H01L21/027 , G03F7/004
CPC分类号： G03F7/091
摘要： The present invention relates to a novel antireflecting coating composition, where the composition comprises a polymer, thermal acid generator and a solvent composition. The invention further comprises processes for the use of such a composition in photolithography. The composition strongly absorbs radiation ranging from about 130 nm (nanometer) to about 250 nm.
摘要翻译：本发明涉及新型抗反射涂料组合物，其中组合物包含聚合物，热酸产生剂和溶剂组合物。本发明还包括在光刻中使用这种组合物的方法。该组合物强烈地吸收约130nm（纳米）至约250nm的辐射。

15. 发明申请

US20110086312A1 Positive-Working Photoimageable Bottom Antireflective Coating 审中-公开
标题翻译：正面照相底部防反射涂层
公开(公告)号：US20110086312A1
公开(公告)日：2011-04-14
申请号：US12576622
申请日：2009-10-09
申请人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
发明人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/091
摘要： The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is wherein W is selected from (C1-C30) linear, branched or cyclic alkyl moiety, substituted or unsubstituted (C3-C40) alicyclic hydrocarbon moiety and substituted is or unsubstituted (C3-C40) cycloalkylalkylene moiety; R is selected from C1-C10 linear or branched alkylene and n≧2. The invention further relates to a process for using such a composition.
摘要翻译：本发明涉及能够在含水碱性显影剂中显影的正底部可光成像抗反射涂料组合物，其中抗反射涂料组合物包含含有至少一个具有发色团的重复单元的聚合物和一个具有羟基的重复单元， /或羧基，结构式（7）的乙烯基醚封端的交联剂，以及任选的光酸产生剂和/或酸和/或热酸发生剂，其中结构（7）其中W选自（C1 -C 30）直链，支链或环状的烷基部分，取代或未取代的（C 3 -C 40）脂环烃部分和取代的或未取代的（C 3 -C 40）环烷基亚烷基部分; R选自C1-C10直链或支链亚烷基，n≥2。本发明还涉及使用这种组合物的方法。

16. 发明申请

US20080171270A1 Polymers Useful in Photoresist Compositions and Compositions Thereof 审中-公开
标题翻译：用于光致抗蚀剂组合物和组合物的聚合物
公开(公告)号：US20080171270A1
公开(公告)日：2008-07-17
申请号：US11623335
申请日：2007-01-16
申请人： Munirathna Padmanaban , Srinivasan Chakrapani , Ralph R. Dammel
发明人： Munirathna Padmanaban , Srinivasan Chakrapani , Ralph R. Dammel
IPC分类号： G03F1/00
CPC分类号： C08F220/28
摘要： The present application relates to a polymer having the formula where R30, R31, R32, R33, R40, R41, R42, jj, kk, mm, and nn are described herein. The compounds are useful in forming photoresist compositions.
摘要翻译：本申请涉及具有下式的聚合物：其中R 30，R 31，R 32，R 33，本文描述了R 40，R 41，R 42，j j，k k，mm和n n。这些化合物可用于形成光致抗蚀剂组合物。

17. 发明授权

US06365322B1 Photoresist composition for deep UV radiation 有权
标题翻译：用于深紫外线辐射的光刻胶组合物
公开(公告)号：US06365322B1
公开(公告)日：2002-04-02
申请号：US09455872
申请日：1999-12-07
申请人： Munirathna Padmanaban , Ralph R. Dammel
发明人： Munirathna Padmanaban , Ralph R. Dammel
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region, where the photoresist performance is not adversely impacted by basic contaminants in the processing environment of the photoresist. The novel photoresist comprises a polymer, a photoactive compound, a basic compound that is a sulfonium or iodonium compound that is essentially nonabsorbing at the exposure wavelength of the photoresist, and a solvent composition. The invention further relates to a process for imaging such a photoresist in the deep ultraviolet region.
摘要翻译：本发明涉及在深紫外区域敏感的新型光致抗蚀剂组合物，其中光致抗蚀剂性能在光致抗蚀剂的加工环境中不受碱性污染物的不利影响。新型光致抗蚀剂包括聚合物，光活性化合物，碱性化合物，其是在光致抗蚀剂的曝光波长下基本上不吸收的锍或碘鎓化合物和溶剂组合物。本发明还涉及一种用于在深紫外区域中成像这种光致抗蚀剂的方法。

18. 发明申请

US20080085463A1 PHOTOACTIVE COMPOUNDS 失效
标题翻译：光化合物
公开(公告)号：US20080085463A1
公开(公告)日：2008-04-10
申请号：US11538841
申请日：2006-10-05
申请人： Ralph R. Dammel , M. Dalil Rahman , David L. Rentkiewicz , Karl van Werden
发明人： Ralph R. Dammel , M. Dalil Rahman , David L. Rentkiewicz , Karl van Werden
IPC分类号： G03C1/00
CPC分类号： C07F5/027 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： The present application relates to photoactive materials having the formula wherein C1+ is a cation; each of R30, R31, R32, R33, R34, R35, R36, R37, R38, R39, R40, and R41 are selected from hydrogen, alkyl, alkyl chain optionally containing one or more O atoms, halide, aryl, aralkyl, alkoxyalkyl, cycloalkyl, hydroxyl, and alkoxy, the alkyl, alkyl chain optionally containing one or more O atoms, aryl, aralkyl, alkoxyalkyl, cycloalkyl, and alkoxy groups being unsubstituted or substituted.
摘要翻译：本申请涉及具有下式的光活性材料：其中C1 + +为阳离子; 每个R 30，R 31，R 32，R 33，R 34和/或S

19. 发明授权

US5614349A Using a Lewis base to control molecular weight of novolak resins 失效
标题翻译：使用路易斯碱控制酚醛清漆树脂的分子量
公开(公告)号：US5614349A
公开(公告)日：1997-03-25
申请号：US997942
申请日：1992-12-29
申请人： M. Dalil Rahman , Daniel P. Aubin , Dana L. Durham , Ralph R. Dammel
发明人： M. Dalil Rahman , Daniel P. Aubin , Dana L. Durham , Ralph R. Dammel
IPC分类号： C08G8/00 , C08G8/08 , C08G8/10 , G03F7/023 , C08G8/04
CPC分类号： C08G8/08 , G03F7/0236
摘要： The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a precise and consistent molecular weight, by adjusting the concentration of Lewis base. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.
摘要翻译：本发明提供了通过调节路易斯碱的浓度来制备具有精确和一致分子量的水不溶性水溶性酚醛清漆树脂的方法。还提供了用于由这种酚醛清漆树脂制造光致抗蚀剂组合物并用于制备使用这种光致抗蚀剂组合物的半导体器件的方法。

20. 发明授权

US5981145A Light absorbing polymers 失效
标题翻译：吸光聚合物
公开(公告)号：US5981145A
公开(公告)日：1999-11-09
申请号：US846986
申请日：1997-04-30
申请人： Shuji Ding , Dinesh N. Khanna , Ping-Hung Lu , Jianhui Shan , Ralph R. Dammel , Dana L. Durham , M. Dalil Rahman , Iain McCulloch
发明人： Shuji Ding , Dinesh N. Khanna , Ping-Hung Lu , Jianhui Shan , Ralph R. Dammel , Dana L. Durham , M. Dalil Rahman , Iain McCulloch
IPC分类号： G03F7/11 , C08F8/00 , C08F8/30 , G03F7/09 , H01L21/027
CPC分类号： G03F7/091 , C08F8/00 , C08F8/30 , C08F12/24 , C08F212/14 , C08F2810/20
摘要： The present invention relates to a novel polymer suitable for use as an antireflective coating or as an additive in photoresist for absorption of reflected light. The novel polymer comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm and at least one unit that contains no aromatic funtionality. The polymer is soluble in organic solvents, preferrably solvents of low toxicity, or it may be soluble in water, which may additionally contain other water miscible organic solvents.
摘要翻译：本发明涉及一种适合用作抗反射涂层的新型聚合物或作为用于吸收反射光的光刻胶中的添加剂。该新型聚合物包含至少一个含有吸收约180nm至约450nm的染料的单元和至少一个不含芳香官能团的单元。聚合物可溶于有机溶剂中，优选低毒性溶剂，或者它可溶于水，其可另外含有其它与水可混溶的有机溶剂。

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