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11. 发明申请

US20110317732A1 Edge Emitting Semiconductor Laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US20110317732A1
公开(公告)日：2011-12-29
申请号：US13130444
申请日：2009-11-19
申请人： Hans-Christoph Eckstein , Uwe D. Zeitner , Wolfgang Schmid
发明人： Hans-Christoph Eckstein , Uwe D. Zeitner , Wolfgang Schmid
IPC分类号： H01S5/10
CPC分类号： H01S5/10 , H01S5/028 , H01S5/0655 , H01S5/1064 , H01S5/1203 , H01S5/1237 , H01S5/16 , H01S5/2036 , H01S2301/176
摘要： An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.
摘要翻译：边缘发射半导体激光器包括具有波导区域的半导体本体。波导区域包括下覆盖层，下波导层，用于产生激光辐射的有源层，上波导层和上覆盖层。波导区域还包括至少一个结构化的激光辐射散射区域，其中横向基底激光辐射模式经受比较高激光模式的辐射更少的散射损耗。

12. 发明授权

US07856045B2 Surface emitting semiconductor component 有权
标题翻译：表面发射半导体元件
公开(公告)号：US07856045B2
公开(公告)日：2010-12-21
申请号：US11634708
申请日：2006-12-05
申请人： Marc Philippens , Tony Albrecht , Martin Müller , Wolfgang Schmid
发明人： Marc Philippens , Tony Albrecht , Martin Müller , Wolfgang Schmid
IPC分类号： H01S5/187
CPC分类号： H01S5/18383 , B82Y20/00 , H01L33/08 , H01L33/105 , H01S5/18311 , H01S5/18358 , H01S5/3095 , H01S5/34
摘要： A surface emitting semiconductor component (1) with an emission direction which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are arranged in a manner spaced apart from one another, a frequency-selective element (6) being formed in the semiconductor body.
摘要翻译：具有包括半导体本体（2）的发射方向的表面发射半导体部件（1）。半导体本体包括多个适于产生辐射的有源区（4a，4b），并且以相互隔开的方式布置，在半导体本体中形成频率选择元件（6）。

13. 发明授权

US07816163B2 Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权
标题翻译：用于垂直发射激光的辐射发射半导体体及其制造方法
公开(公告)号：US07816163B2
公开(公告)日：2010-10-19
申请号：US12240147
申请日：2008-09-29
申请人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
发明人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
IPC分类号： H01L21/00
CPC分类号： H01S5/14 , H01S5/18308 , H01S5/2072
摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
摘要翻译：本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

14. 发明授权

US07778300B2 Optically pumped semiconductor device 有权
标题翻译：光泵浦半导体器件
公开(公告)号：US07778300B2
公开(公告)日：2010-08-17
申请号：US11579196
申请日：2005-04-11
申请人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
发明人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
IPC分类号： H01S5/00
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/18313 , H01S5/18327 , H01S5/18388 , H01S5/32341
摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.
摘要翻译：一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源，在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层（2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场垂直发射极层（3）被抑制。

15. 发明授权

US07709851B2 Light-emitting diode chip including a mirror layer and a light-generating active zone 有权
标题翻译：发光二极管芯片，其包括镜层和发光活性区
公开(公告)号：US07709851B2
公开(公告)日：2010-05-04
申请号：US11578657
申请日：2005-04-14
申请人： Stefan Bader , Wolfgang Schmid
发明人： Stefan Bader , Wolfgang Schmid
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L27/15 , H01L29/267 , H01L31/12 , H01L29/16 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/0203
CPC分类号： H01L33/405 , H01L33/465 , H01L2224/48091 , H01L2924/00014
摘要： A thin-film light-emitting diode chip, in which the distance between a mirror layer (4) and a light-generating active zone (3) is set in such a way that a radiation emitted by the active zone (3) interferes with a light reflected from the mirror layer (4), the internal quantum efficiency of the active zone (3) being influenced by this interference and the emission characteristic of the active zone (3) of at least one preferred direction thereby being obtained.
摘要翻译：一种薄膜发光二极管芯片，其中镜面层（4）和发光活性区域（3）之间的距离被设置成使得由活性区域（3）发射的辐射干扰从镜面层（4）反射的光，活性区域（3）的内部量子效率受到该干涉的影响，从而得到至少一个优选方向的有源区域（3）的发射特性。

16. 发明授权

US07650978B2 Actuator device for actuating a locking mechanism 失效
标题翻译：用于致动锁定机构的致动器装置
公开(公告)号：US07650978B2
公开(公告)日：2010-01-26
申请号：US11630534
申请日：2005-06-11
申请人： Uwe Rühringer , Wolfgang Schmid , Thilo Schmidt
发明人： Uwe Rühringer , Wolfgang Schmid , Thilo Schmidt
IPC分类号： F16H63/48 , F16H63/38 , B60T7/00
CPC分类号： F16H63/3483 , F15B15/261 , F16H63/3433 , F16H63/3491 , F16H2061/226
摘要： An actuating mechanism (1) for operating a parking-lock mechanism of the drive chain of a vehicle with an automatic drive. The actuating mechanism has a piston unit (4), a detent element and an electromagnetic operating device (6) for operating a release element (7), which is intended for deactivating the detent element (5). The piston unit communicates with an emergency unlocking mechanism (14) and is positioned to open the locking mechanism by way of the piston unit. The detent element, the piston unit and the release element interact such that the locking mechanism remains in the currently engaged state when the locking mechanism is open and the operating device is not electrified, as well as when the locking mechanism is closed and a fluid pressure is applied to the piston unit.
摘要翻译：一种用于利用自动驱动来操作车辆的驱动链的驻车锁定机构的致动机构（1）。致动机构具有用于操作释放元件（7）的活塞单元（4），制动元件和用于操作止动元件（5）的释放元件（7）的电磁操作装置（6）。活塞单元与紧急解锁机构（14）连通并且被定位成通过活塞单元打开锁定机构。锁定元件，活塞单元和释放元件相互作用，使得当锁定机构打开并且操作装置未通电时，锁定机构保持处于当前接合状态，并且当锁定机构闭合时，流体压力被施加到活塞单元。

17. 发明授权

US07443898B2 Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same 有权
标题翻译：用于垂直发射激光的辐射发射半导体体及其制造方法
公开(公告)号：US07443898B2
公开(公告)日：2008-10-28
申请号：US11210263
申请日：2005-08-23
申请人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
发明人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
IPC分类号： H01S5/00
CPC分类号： H01S5/14 , H01S5/18308 , H01S5/2072
摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
摘要翻译：本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

18. 发明申请

US20080212632A1 Integrated tapered diode laser arrangement and method for producing it 有权
标题翻译：集成锥形二极管激光器布置及其制造方法
公开(公告)号：US20080212632A1
公开(公告)日：2008-09-04
申请号：US12072761
申请日：2008-02-27
申请人： Franz Eberhard , Thomas Schlereth , Wolfgang Schmid
发明人： Franz Eberhard , Thomas Schlereth , Wolfgang Schmid
IPC分类号： H01S5/20 , H01L33/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/1064 , H01S5/162 , H01S5/2072 , H01S5/3414 , H01S5/343
摘要： An integrated tapered diode laser arrangement comprises an injector region (2) and a region (3) which is optically coupled to the injector region and expands in a cross section. At least one of said regions (2, 3) has a quantum well structure with a plurality of semiconductor materials, wherein the semiconductor materials are intermixed at least in one region (21, 31). The intermixed region (21, 31) has a larger electrical band gap than a non-intermixed region.
摘要翻译：集成的锥形二极管激光装置包括喷射器区域（2）和与喷射器区域光学耦合并在横截面中膨胀的区域（3）。所述区域（2,3）中的至少一个具有多个半导体材料的量子阱结构，其中半导体材料至少在一个区域（21,31）中混合。混合区域（21,31）具有比非混合区域更大的电气带隙。

19. 发明申请

US20070145388A1 Semiconductor component 有权
标题翻译：半导体元件
公开(公告)号：US20070145388A1
公开(公告)日：2007-06-28
申请号：US11634708
申请日：2006-12-05
申请人： Marc Philippens , Tony Albrecht , Martin Muller , Wolfgang Schmid
发明人： Marc Philippens , Tony Albrecht , Martin Muller , Wolfgang Schmid
IPC分类号： H01L33/00
CPC分类号： H01S5/18383 , B82Y20/00 , H01L33/08 , H01L33/105 , H01S5/18311 , H01S5/18358 , H01S5/3095 , H01S5/34
摘要： A surface emitting semiconductor component (1) with an emission direction which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are arranged in a manner spaced apart from one another, a frequency-selective element (6) being formed in the semiconductor body.
摘要翻译：具有包括半导体本体（2）的发射方向的表面发射半导体部件（1）。半导体本体包括多个有效区域（4a，4b），它们适合于产生辐射并且以彼此间隔开的方式布置;频率选择元件（6）形成在半导体本体。

20. 发明授权

US07019832B2 Optical spectrometer with several spectral bandwidths 失效
标题翻译：具有多个光谱带宽的光谱仪
公开(公告)号：US07019832B2
公开(公告)日：2006-03-28
申请号：US10612227
申请日：2003-07-02
申请人： Thomas Fuhrmann , Wolfgang Schmid , Michael Pahlke
发明人： Thomas Fuhrmann , Wolfgang Schmid , Michael Pahlke
IPC分类号： G01J3/28
CPC分类号： G01J3/02 , G01J3/0218 , G01J3/28
摘要： An optical spectrometer comprises at least two coupling apertures with different mode field diameters, a means for dispersing the light beams exiting each of the coupling apertures along a dispersion axis and at least two decoupling apertures on which the dispersed light beams are imaged and whose mode field diameters each correspond to the mode field diameters of the associated coupling apertures. Due the enlarged mode field diameter, a larger spectral fraction of dispersed light beams, i.e., light of a larger spectral bandwidth, can be coupled into the decoupling aperture than into the decoupling aperture.
摘要翻译：光学光谱仪包括具有不同模场直径的至少两个耦合孔径，用于沿着色散轴线分散离开每个耦合孔的光束的装置和分散光束成像的至少两个去耦孔，并且其模场直径各自对应于相关联的联接孔的模场直径。由于放大的模场直径，分散光束的较大光谱分数，即较大光谱带宽的光可以耦合到去耦孔径中而不是去耦孔径。

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