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11. 发明申请

US20070023806A1 Method and structure for forming slot via bitline for MRAM devices 有权
标题翻译：用于通过MRAM器件的位线形成槽的方法和结构
公开(公告)号：US20070023806A1
公开(公告)日：2007-02-01
申请号：US11193660
申请日：2005-07-29
申请人： Michael Gaidis , Carl Radens , Lawrence Clevenger , Timothy Dalton , Louis Hsu , Keith Hon Wong , Chih-Chao Yang
发明人： Michael Gaidis , Carl Radens , Lawrence Clevenger , Timothy Dalton , Louis Hsu , Keith Hon Wong , Chih-Chao Yang
IPC分类号： H01L29/94
CPC分类号： B82Y10/00 , H01L27/222 , H01L43/12
摘要： A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
摘要翻译：磁性随机存取存储器（MRAM）器件包括形成在下布线层上的磁隧道结（MTJ）堆叠，形成在MTJ堆叠上的硬掩模和形成在硬掩模上的上布线层。上布线层包括经由位于其中的位线的槽，槽经由与硬掩模接触的位线并与部分地围绕硬掩模的侧壁的蚀刻停止层接触。

12. 发明申请

US20060109117A1 Apparatus and Method of Intelligent Multistage System Deactivation 审中-公开
标题翻译：智能多级系统停用的装置与方法
公开(公告)号：US20060109117A1
公开(公告)日：2006-05-25
申请号：US10904664
申请日：2004-11-22
申请人： Louis Hsu , Lawrence Clevenger , Carl Radens , Kwong Wong , Chih-Chao Yang , Timothy Dalton
发明人： Louis Hsu , Lawrence Clevenger , Carl Radens , Kwong Wong , Chih-Chao Yang , Timothy Dalton
IPC分类号： G08B13/14
CPC分类号： G06F21/554 , G06F21/81 , G06F21/86
摘要： A deactivation management unit for facilitating an intelligent multistage system deactivation process where the deactivation management unit is flexible, facilitates recovery, and renders reverse engineering nearly impossible after the system has been permanently deactivated.
摘要翻译：一种停用管理单元，用于促进智能多级系统停用过程，其中停用管理单元是灵活的，便于恢复，并且在系统被永久停用之后几乎不可能实现逆向工程。

13. 发明授权

US08024012B2 Intelligent wireless power charging system 有权
标题翻译：智能无线充电系统
公开(公告)号：US08024012B2
公开(公告)日：2011-09-20
申请号：US12137185
申请日：2008-06-11
申请人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens
发明人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens
IPC分类号： H04B1/38 , H04B1/16
CPC分类号： H02J50/20 , H02J7/025 , H02J17/00
摘要： A system and methodology for intelligent power management of wirelessly networked devices. The system provides for reliable wireless communication via a wireless power charging method and, a method to maintain power capacity of batteries in a wireless device. The batteries are charged via an RF harvesting unit embedded inside the wireless device. An intelligent wireless power charging system further comprises at least two batteries and at least two RF adaptor devices coupled to an AC power line. The first adaptor is set for data communication while the second adaptor is used to transmit the power. In addition, when a first battery is in use during active mode, the second battery is subjected to wireless charging.
摘要翻译：一种用于无线网络设备智能电源管理的系统和方法。该系统通过无线电力充电方法提供可靠的无线通信，以及在无线设备中维持电池的电力容量的方法。电池通过嵌入在无线设备内部的射频收集单元进行充电。智能无线电力充电系统还包括耦合到AC电力线的至少两个电池和至少两个RF适配器装置。第一个适配器设置为数据通信，而第二个适配器用于传输电源。此外，当在活动模式期间使用第一电池时，对第二电池进行无线充电。

14. 发明申请

US20080014663A1 STRUCTURE AND METHOD OF FABRICATING A HINGE TYPE MEMS SWITCH 失效
标题翻译：铰链类型MEMS开关的结构和方法
公开(公告)号：US20080014663A1
公开(公告)日：2008-01-17
申请号：US11776835
申请日：2007-07-12
申请人： Louis Hsu , Timothy Dalton , Lawrence Clevenger , Carl Radens , Kwong Wong , Chih-Chao Yang
发明人： Louis Hsu , Timothy Dalton , Lawrence Clevenger , Carl Radens , Kwong Wong , Chih-Chao Yang
IPC分类号： H01L21/00
CPC分类号： H01H59/0009 , H01H1/20 , H01H2001/0084 , H01H2001/0089 , Y10T29/49105 , Y10T29/49128 , Y10T29/49155 , Y10T29/49204 , Y10T29/49208
摘要： A hinge type MEMS switch that is fully integratable within a semiconductor fabrication process such as a CMOS, is described. The MEMS switch constructed on a substrate consists of two posts, each end thereof terminating in a cap; a rigid movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings being loosely connected to guiding posts; upper and lower electrode pairs; and upper and lower interconnect wiring lines connected and disconnected by the rigid movable conductive plate. When in the energized state, a low voltage level is applied to the upper electrode pair, while the lower electrode pair is grounded. The conductive plate moves up, shorting two upper interconnect wirings lines. Conversely, the conductive plate moves down when the voltage is applied to the lower electrode pair, while the upper electrode pair is grounded, shorting the two lower interconnect wiring lines and opening the upper wiring lines. The MEMS switch thus formed generates an even force that provides the conductive plate with a translational movement, with the displacement being guided by the two vertical posts.
摘要翻译：描述了在诸如CMOS之类的半导体制造工艺中可完全集成的铰链式MEMS开关。构造在基板上的MEMS开关由两个柱构成，每个端部终止于盖; 刚性可移动导电板，其表面终止于两个相对边缘中的每一个中的环中，所述环松散地连接到引导柱; 上下电极对; 并且由刚性可移动导电板连接和断开的上下互连布线。当处于通电状态时，低电压电平施加到上电极对，而下电极对接地。导电板向上移动，使两条上部互连线路短路。相反，当电压施加到下电极对时，导电板向下移动，而上电极对接地，使两个下互连布线短路并打开上布线。由此形成的MEMS开关产生均匀的力，其为导电板提供平移运动，位移由两个垂直柱引导。

15. 发明申请

US20070281469A1 MODIFIED VIA BOTTOM STRUCTURE FOR RELIABILITY ENHANCEMENT 审中-公开
标题翻译：通过可靠性增强的底部结构进行修改
公开(公告)号：US20070281469A1
公开(公告)日：2007-12-06
申请号：US11839258
申请日：2007-08-15
申请人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Conal Murray , Carl Radens , Kwong-Hon Wong , Chih-Chao Yang
发明人： Lawrence Clevenger , Timothy Dalton , Louis Hsu , Conal Murray , Carl Radens , Kwong-Hon Wong , Chih-Chao Yang
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76847 , H01L21/76865 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The present invention provides an interconnect structure that can be made in the BEOL which exhibits good mechanical contact during normal chip operations and does not fail during various reliability tests as compared with the conventional interconnect structures described above. The inventive interconnect structure has a kinked interface at the bottom of a via that is located within an interlayer dielectric layer. Specifically, the inventive interconnect structure includes a first dielectric layer having at least one metallic interconnect embedded within a surface thereof; a second dielectric layer located atop the first dielectric layer, wherein said second dielectric layer has at least one aperture having an upper line region and a lower via region, wherein the lower via region includes a kinked interface; at least one pair of liners located on at least vertical walls of the at least one aperture; and a conductive material filling the at least one aperture.
摘要翻译：本发明提供一种可以在BEOL中制造的互连结构，其在正常的芯片操作期间表现出良好的机械接触，并且在与上述的常规互连结构相比在各种可靠性测试期间不会失败。本发明的互连结构在通孔的底部具有位于层间介质层内的扭结界面。具体地，本发明的互连结构包括：第一介电层，其具有嵌入在其表面内的至少一个金属互连; 位于所述第一介电层顶部的第二电介质层，其中所述第二电介质层具有至少一个具有上线区域和下通孔区域的孔，其中所述下通孔区域包括扭结界面; 位于所述至少一个孔的至少垂直壁上的至少一对衬垫; 以及填充所述至少一个孔的导电材料。

16. 发明申请

US20070252127A1 Phase change memory element with a peripheral connection to a thin film electrode and method of manufacture thereof 审中-公开
标题翻译：具有与薄膜电极的周边连接的相变存储元件及其制造方法
公开(公告)号：US20070252127A1
公开(公告)日：2007-11-01
申请号：US11394263
申请日：2006-03-30
申请人： John Arnold , Lawrence Clevenger , Timothy Dalton , Michael Gaidis , Louis Hsu , Carl Radens , Keith Wong , Chih-Chao Yang
发明人： John Arnold , Lawrence Clevenger , Timothy Dalton , Michael Gaidis , Louis Hsu , Carl Radens , Keith Wong , Chih-Chao Yang
IPC分类号： H01L29/02
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of one of the first and second electrodes contacts the phase change element thereby reducing the contact area between the phase change element and one of the electrodes thereby increasing the current density through the phase change element and effectively inducing the phase change at a first programming power.
摘要翻译： PCM单元结构包括第一电极，相变元件和第二电极，其中相变元件插入在第一电极和第二电极之间，并且只有第一和第二电极中的一个的周边边缘接触从而减小相变元件与电极中的一个之间的接触面积，从而通过相变元件增加电流密度，并有效地在第一编程功率下引起相位变化。

17. 发明申请

US20070054489A1 Interconnect structures with encasing cap and methods of making thereof 失效
标题翻译：具有封盖的互连结构及其制造方法
公开(公告)号：US20070054489A1
公开(公告)日：2007-03-08
申请号：US11503259
申请日：2006-08-14
申请人： Kwong Wong , Louis Hsu , Timothy Dalton , Carl Radens , Chih-Chao Yang , Lawrence Clevenger , Theodorus Standaert
发明人： Kwong Wong , Louis Hsu , Timothy Dalton , Carl Radens , Chih-Chao Yang , Lawrence Clevenger , Theodorus Standaert
IPC分类号： H01L21/44
CPC分类号： H01L21/76852 , H01L21/288 , H01L21/2885 , H01L21/76885 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of making an interconnect that includes providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure extends above an upper surface of the dielectric; and depositing an encasing cap over the extended portion of the interconnect structure.
摘要翻译：一种制造互连的方法，包括在电介质材料中提供互连结构，使电介质材料凹陷，使得互连结构的一部分在电介质的上表面上方延伸; 以及在所述互连结构的延伸部分上沉积封装盖。

18. 发明申请

US20060145792A1 STRUCTURE AND METHOD OF FABRICATING A HINGE TYPE MEMS SWITCH 有权
标题翻译：铰链类型MEMS开关的结构和方法
公开(公告)号：US20060145792A1
公开(公告)日：2006-07-06
申请号：US10905449
申请日：2005-01-05
申请人： Louis Hsu , Timothy Dalton , Lawrence Clevenger , Carl Radens , Kwong Wong , Chih-Chao Yang
发明人： Louis Hsu , Timothy Dalton , Lawrence Clevenger , Carl Radens , Kwong Wong , Chih-Chao Yang
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H1/20 , H01H2001/0084 , H01H2001/0089 , Y10T29/49105 , Y10T29/49128 , Y10T29/49155 , Y10T29/49204 , Y10T29/49208
摘要： A hinge type MEMS switch that is fully integratable within a semiconductor fabrication process, such as a CMOS, is described. The MEMS switch constructed on a substrate consists of two posts, each end thereof terminating in a cap; a movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings being loosely connected to guiding posts; an upper and lower electrode pairs; and upper and lower interconnect wiring lines connected and disconnected by the movable conductive plate. When in the energized state, a low voltage level is applied to the upper electrode pair, while the lower electrode pair is grounded. The conductive plate moves up, shorting two upper interconnect wirings lines. Conversely, the conductive plate moves down when the voltage is applied to the lower electrode pair, while the upper electrode pair is grounded, shorting the two lower interconnect wiring lines and opening the upper wiring lines. The MEMS switch thus formed generates an even force that provides the conductive plate with a translational movement, with the displacement being guided by the two vertical posts.
摘要翻译：描述了在诸如CMOS之类的半导体制造工艺中可完全集成的铰链式MEMS开关。构造在基板上的MEMS开关由两个柱构成，每个端部终止于盖; 可移动导电板，其表面终止于两个相对边缘中的每一个中的环中，所述环松动地连接到引导柱; 上下电极对; 以及由可动导电板连接和断开的上下互连布线。当处于通电状态时，低电压电平施加到上电极对，而下电极对接地。导电板向上移动，使两条上部互连线路短路。相反，当电压施加到下电极对时，导电板向下移动，而上电极对接地，使两个下互连布线短路并打开上布线。由此形成的MEMS开关产生均匀的力，其为导电板提供平移运动，位移由两个垂直柱引导。

19. 发明授权

US07348870B2 Structure and method of fabricating a hinge type MEMS switch 有权
标题翻译：制造铰链式MEMS开关的结构和方法
公开(公告)号：US07348870B2
公开(公告)日：2008-03-25
申请号：US10905449
申请日：2005-01-05
申请人： Louis C. Hsu , Timothy Dalton , Lawrence Clevenger , Carl Radens , Kwong Hon Wong , Chih-Chao Yang
发明人： Louis C. Hsu , Timothy Dalton , Lawrence Clevenger , Carl Radens , Kwong Hon Wong , Chih-Chao Yang
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H1/20 , H01H2001/0084 , H01H2001/0089 , Y10T29/49105 , Y10T29/49128 , Y10T29/49155 , Y10T29/49204 , Y10T29/49208
摘要： A hinge type MEMS switch that is fully integratable within a semiconductor fabrication process, such as a CMOS, is described. The MEMS switch constructed on a substrate consists of two posts, each end thereof terminating in a cap; a movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings being loosely connected to guiding posts; an upper and lower electrode pairs; and upper and lower interconnect wiring lines connected and disconnected by the movable conductive plate. When in the energized state, a low voltage level is applied to the upper electrode pair, while the lower electrode pair is grounded. The conductive plate moves up, shorting two upper interconnect wirings lines. Conversely, the conductive plate moves down when the voltage is applied to the lower electrode pair, while the upper electrode pair is grounded, shorting the two lower interconnect wiring lines and opening the upper wiring lines. The MEMS switch thus formed generates an even force that provides the conductive plate with a translational movement, with the displacement being guided by the two vertical posts.
摘要翻译：描述了在诸如CMOS之类的半导体制造工艺中可完全集成的铰链式MEMS开关。构造在基板上的MEMS开关由两个柱构成，每个端部终止于盖; 可移动导电板，其表面终止于两个相对边缘中的每一个中的环中，所述环松动地连接到引导柱; 上下电极对; 以及由可动导电板连接和断开的上下互连布线。当处于通电状态时，低电压电平施加到上电极对，而下电极对接地。导电板向上移动，使两条上部互连线路短路。相反，当电压施加到下电极对时，导电板向下移动，而上电极对接地，使两个下互连布线短路并打开上布线。由此形成的MEMS开关产生均匀的力，其为导电板提供平移运动，位移由两个垂直柱引导。

20. 发明授权

US07473979B2 Semiconductor integrated circuit devices having high-Q wafer back-side capacitors 有权
标题翻译：具有高Q晶片背面电容器的半导体集成电路器件
公开(公告)号：US07473979B2
公开(公告)日：2009-01-06
申请号：US11443394
申请日：2006-05-30
申请人： Lawrence Clevenger , Timothy Joseph Dalton , Louis Hsu , Carl Radens , Vidhya Ramachandran , Keith Kwong Hon Wong , Chih-Chao Yang
发明人： Lawrence Clevenger , Timothy Joseph Dalton , Louis Hsu , Carl Radens , Vidhya Ramachandran , Keith Kwong Hon Wong , Chih-Chao Yang
IPC分类号： H01L29/92
CPC分类号： H01L21/84 , H01L21/76898 , H01L23/481 , H01L23/5223 , H01L27/1203 , H01L2924/0002 , Y10S438/957 , H01L2924/00
摘要： Methods are provided for fabricating semiconductor IC (integrated circuit) chips having high-Q on-chip capacitors formed on the chip back-side and connected to integrated circuits on the chip front-side using through-wafer interconnects. In one aspect, a semiconductor device includes a semiconductor substrate having a front side, a back side, and a buried insulating layer interposed between the front and back sides of the substrate. An integrated circuit is formed on the front side of the semiconductor substrate, an integrated capacitor is formed on the back side of the semiconductor substrate, and an interconnection structure is formed through the buried insulating layer to connect the integrated capacitor to the integrated circuit.
摘要翻译：提供了用于制造半导体IC（集成电路）芯片的半导体IC（集成电路）芯片，其具有形成在芯片背面的高Q片上电容器，并使用晶片间互连连接到芯片正面的集成电路。在一个方面，半导体器件包括一个半导体衬底，该半导体衬底具有介于衬底的正面和背面之间的正面，背面和掩埋绝缘层。在半导体基板的正面形成有集成电路，在半导体基板的背面形成有集成电容器，通过埋入绝缘层形成互连结构，将集成电容器与集成电路连接起来。

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