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11. 发明申请

WO2012162051A1 VACUUM SEAL ARRANGEMENT USEFUL IN PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：真空密封装置适用于等离子体加工室
公开(公告)号：WO2012162051A1
公开(公告)日：2012-11-29
申请号：PCT/US2012/038081
申请日：2012-05-16
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet
发明人： SINGH, Harmeet
IPC分类号： H01L21/00
CPC分类号： H01L21/67126 , F16J15/062
摘要： A vacuum seal arrangement comprising a one-piece elastomeric gasket having at least first and second O-rings interconnected by a planar web, a first part having a first planar sealing surface with a dove-tail groove therein holding the first O-ring and a square walled groove therein holding the second O-ring, the first part further including at least one passage in the first planar sealing surface surrounded by the first O-ring or second O-ring.
摘要翻译：一种真空密封装置，包括具有通过平面腹板互连的至少第一和第二O形环的单件式弹性垫圈，第一部分具有第一平面密封表面，其中带有第一O形环的鸽尾槽，其中保持第二O形环的方形壁槽，第一部分还包括由第一O形环或第二O形环包围的第一平面密封表面中的至少一个通道。

12. 发明申请

WO2011049620A2 HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：加热板用于半导体加工的平面加热区
公开(公告)号：WO2011049620A2
公开(公告)日：2011-04-28
申请号：PCT/US2010/002794
申请日：2010-10-20
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet , GAFF, Keith , BENJAMIN, Neil , COMENDANT, Keith
发明人： SINGH, Harmeet , GAFF, Keith , BENJAMIN, Neil , COMENDANT, Keith
IPC分类号： H01L21/68
CPC分类号： H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

13. 发明申请

WO2010067284A3 METHOD AND SYSTEM FOR CENTERING WAFER ON CHUCK 审中-公开
公开(公告)号：WO2010067284A3
公开(公告)日：2010-06-17
申请号：PCT/IB2009/055503
申请日：2009-12-04
申请人： LAM RESEARCH CORPORATION , O'NEILL, Robert Griffith , LUQUE, Jorge , CHOU, Shang-I , SINGH, Harmeet
发明人： O'NEILL, Robert Griffith , LUQUE, Jorge , CHOU, Shang-I , SINGH, Harmeet
IPC分类号： H01L21/68 , H01L21/687
摘要： A wafer handling mechanism is operated to place a wafer on a chuck. A chucking force is then applied to the wafer, whereby wafer support features of the chuck transfer a defect pattern onto a surface of the wafer. The surface of the wafer is analyzed by a defect metrology tool to obtain a mapping of the defect pattern transferred onto the surface of the wafer. A center coordinate of the chuck within a coordinate system of the wafer is determined by analyzing the defect pattern as transferred to the surface of the wafer. A spatial offset between the center coordinate of the chuck and the center of the wafer is determined. The spatial offset is used to adjust the wafer handling mechanism so as to enable alignment of the center of the wafer to the center coordinate of the chuck.

14. 发明申请

WO2013012620A1 ATOMIC LAYER ETCHING USING METASTABLES FORMED FROM AN INERT GAS 审中-公开
标题翻译：使用从惰性气体形成的质子的原子层蚀刻
公开(公告)号：WO2013012620A1
公开(公告)日：2013-01-24
申请号：PCT/US2012/046137
申请日：2012-07-11
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet
发明人： SINGH, Harmeet
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32458 , H01J37/32633 , H01J37/32715 , H01J37/32899 , H01J2237/334 , H01L21/3065 , H01L21/76814
摘要： Substrate processing systems and methods for etching an atomic layer are disclosed. The methods and systems are configured to introducing a first gas into the chamber, the gas being an etchant gas suitable for etching the layer and allowing the first gas to be present in the chamber for a period of time sufficient to cause adsorption of at least some of the first gas into the layer. The first gas is substantially replaced in the chamber with an inert gas, and metastables are then generated from the inert gas to etch the layer with the metastables while substantially preventing the plasma charged species from etching the layer.
摘要翻译：公开了用于蚀刻原子层的衬底处理系统和方法。所述方法和系统被配置为将第一气体引入所述室中，所述气体是适于蚀刻所述层的蚀刻剂气体，并允许所述第一气体在所述室中存在足以引起至少一些吸附的时间的第一个气体进入层。第一种气体在室内基本上被惰性气体替代，然后从惰性气体产生亚稳态，以便在亚稳态下蚀刻该层，同时基本上防止等离子体带电物质蚀刻该层。

15. 发明申请

WO2022098778A1 SPARK PLASMA SINTERED COMPONENT FOR PLASMA PROCESSING CHAMBER 审中-公开
公开(公告)号：WO2022098778A1
公开(公告)日：2022-05-12
申请号：PCT/US2021/057926
申请日：2021-11-03
申请人： LAM RESEARCH CORPORATION
发明人： XU, Lin , SINGH, Harmeet , HAZARIKA, Pankaj , SRINIVASAN, Satish , KOSHY, Robin
IPC分类号： H01J37/32 , C23C16/44
摘要： A method for making a component for use in a plasma processing chamber is provided. A non-oxide silicon containing powder composition is placed in a mold, wherein the non-oxide silicon containing powder composition consists essentially of a non-oxide silicon containing powder and at least one of a B or B4C dopant. The non-oxide silicon containing powder composition is subjected to spark plasma sintering (SPS) to form a spark plasma sintered component. The spark plasma sintered component is machined into a plasma processing chamber component.

16. 发明申请

WO2013012612A1 ELECTROSTATIC CHUCK WITH WAFER BACKSIDE PLASMA ASSISTED DECHUCK 审中-公开
标题翻译：带背面等离子体辅助离心机的静电卡盘
公开(公告)号：WO2013012612A1
公开(公告)日：2013-01-24
申请号：PCT/US2012/046066
申请日：2012-07-10
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet
发明人： SINGH, Harmeet
IPC分类号： H05F3/00
CPC分类号： H01L21/6831
摘要： An electrostatic chuck assembly useful in a plasma processing chamber, comprising a support surface on which a semiconductor wafer is supported during processing of the wafer in the chamber, at least one electrostatic clamping electrode which applies an electrostatic clamping force to the wafer on the support surface when an electrostatic clamping voltage is applied to the clamping electrode, at least one outlet in the support surface which delivers a heat transfer gas to an underside of the wafer, at least one gas passage connected to a source of heat transfer gas operable to supply heat transfer gas at a desired pressure to the at least one gas passage, and at least one cavity and plasma generating electrode along the at least one gas passage, the plasma generating electrode operable to form a dechucking plasma in the cavity.
摘要翻译：一种用于等离子体处理室的静电卡盘组件，包括：在处理室内的晶片时支撑半导体晶片的支撑表面;至少一个静电夹持电极，其将静电夹持力施加到支撑表面上的晶片当向夹持电极施加静电夹紧电压时，将支撑表面中的至少一个出口传送到晶片的下侧，将至少一个气体通道连接到可传导热量的热传递气体源将所需压力的气体转移到至少一个气体通道，以及沿着至少一个气体通道的至少一个空腔和等离子体产生电极，等离子体产生电极可操作以在空腔中形成解吸等离子体。

17. 发明申请

WO2012142038A1 E-BEAM ENHANCED DECOUPLED SOURCE FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：电子束增强半导体加工的解离源
公开(公告)号：WO2012142038A1
公开(公告)日：2012-10-18
申请号：PCT/US2012/032920
申请日：2012-04-10
申请人： LAM RESEARCH CORPORATION , HOLLAND, John, Patrick , VENTZEK, Peter, L.g. , SINGH, Harmeet , SHINAGAWA, Jun , KOSHIISHI, Akira
发明人： HOLLAND, John, Patrick , VENTZEK, Peter, L.g. , SINGH, Harmeet , SHINAGAWA, Jun , KOSHIISHI, Akira
IPC分类号： H01J37/32 , B05D3/06 , B05D3/14
CPC分类号： C23C16/45536 , C23C16/517 , H01J2237/06366
摘要： A semiconductor substrate processing system includes a processing chamber, a substrate support, and a separate plasma chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion.to. radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.
摘要翻译：半导体基板处理系统包括处理室，基板支撑件和单独的等离子体室。等离子体室被定义为产生等离子体。该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。该系统还包括用于将电子注入到处理室中的电子注入装置，以控制处理室内的电子能量分布，从而控制离子。处理室内的自由基密度比。在一个实施例中，电子束源被定义为将电子束透过衬底支撑件上方并穿过衬底支撑件的处理室。

18. 发明申请

WO2012064543A1 HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：加热板用于半导体加工的平面加热区
公开(公告)号：WO2012064543A1
公开(公告)日：2012-05-18
申请号：PCT/US2011/058590
申请日：2011-10-31
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet
发明人： SINGH, Harmeet
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , B29D7/01 , H01C17/28 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B3/68 , H05B2203/037
摘要： Abstract A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone includes one or more heater elements made of an insulator-conductor composite. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：摘要：一种用于半导体等离子体处理装置中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置每个平面加热器区域包括由绝缘体 - 导体复合材料制成的一个或多个加热器元件。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷片接合在一起。

19. 发明申请

WO2012054198A2 METHODS OF FAULT DETECTION FOR MULTIPLEXED HEATER ARRAY 审中-公开
标题翻译：复合加热器阵列故障检测方法
公开(公告)号：WO2012054198A2
公开(公告)日：2012-04-26
申请号：PCT/US2011/053558
申请日：2011-09-28
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet
发明人： SINGH, Harmeet
IPC分类号： H01L21/205 , H01L21/66
CPC分类号： H05B1/0233 , H01L21/67109 , H01L21/67288
摘要： Abstract Described herein is a method of detecting fault conditions in a multiplexed multi-heater-zone heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus.
摘要翻译：本文描述了一种用于检测用于在半导体处理设备中支撑半导体衬底的衬底支撑组件的多路复用多加热器区加热板中的故障状况的方法。

20. 发明申请

WO2012039744A2 PLASMA CONFINEMENT RING ASSEMBLY FOR PLASMA PROCESSING CHAMBERS 审中-公开
标题翻译：用于等离子体处理室的等离子体约束环组件
公开(公告)号：WO2012039744A2
公开(公告)日：2012-03-29
申请号：PCT/US2011/001501
申请日：2011-08-25
申请人： LAM RESEARCH CORPORATION , DE LA LLERA, Anthony , CARMAN, David , TAYLOR, Travis, R. , ULLAL, Saurabh, J. , SINGH, Harmeet
发明人： DE LA LLERA, Anthony , CARMAN, David , TAYLOR, Travis, R. , ULLAL, Saurabh, J. , SINGH, Harmeet
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069
摘要： A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.
摘要翻译：可以使用具有单个可移动下环的等离子体约束环组件来控制电容耦合等离子体反应室中的晶片面积压力，其中晶片支撑在下电极组件上并且将处理气体引入该室由上部喷头电极组件组成。该组件包括上部环，下部环，衣架，衣架帽，隔套和垫圈。当调节上下电极之间的间隙时，垫圈与下电极组件接触时，下环由吊架支撑并可朝上环移动。衣架帽与衣架的上端接合并且装配在上环中的衣架孔的上部中。隔离套筒围绕吊架的下部并装配在吊架孔的下部内。垫圈放在衣架的扩大头部和下部环的下表面之间。隔离套的尺寸设计为避免在提升下环期间与悬挂孔的内表面摩擦。

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