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11. 发明申请

WO2011002800A3 METHODS AND ARRANGEMENTS FOR IN-SITU PROCESS MONITORING AND CONTROL FOR PLASMA PROCESSING TOOLS 审中-公开
标题翻译：用于等离子体加工工具的现场过程监控和控制的方法和装置
公开(公告)号：WO2011002800A3
公开(公告)日：2011-04-07
申请号：PCT/US2010040456
申请日：2010-06-29
申请人： LAM RES CORP , VENUGOPAL VIJAYAKUMAR C , BENJAMIN NEIL MARTIN PAUL
发明人： VENUGOPAL VIJAYAKUMAR C , BENJAMIN NEIL MARTIN PAUL
IPC分类号： H01L21/3065 , H01L21/00
CPC分类号： H01J37/3299 , H01J37/32935
摘要： An arrangement for implementing an automatic in-situ process control scheme during execution of a recipe is provided. The arrangement includes control-loop sensors configured at least for collecting a first set of sensor data to facilitate monitoring set points during the recipe execution, wherein the control-loop sensors being part of a process control loop. The arrangement also includes independent sensors configured at least for collecting a second set of sensor data, which is not part of the process control loop. The arrangement yet also includes a hub configured for at least receiving at least one of the first set of sensor data and the second set of sensor data. The arrangement yet further includes an analysis computer communicably coupled with the hub and configured for performing analysis of at least one of the first set of sensor data and the second set of sensor data.
摘要翻译：提供了在执行配方期间实现自动原位过程控制方案的布置。该装置包括控制回路传感器，其配置成至少用于收集第一组传感器数据以便于在配方执行期间监视设定点，其中控制环传感器是过程控制回路的一部分。该装置还包括至少用于收集第二组传感器数据的独立传感器，其不是过程控制回路的一部分。该布置还包括配置用于至少接收第一组传感器数据和第二组传感器数据中的至少一个的集线器。该装置还包括分析计算机，其与所述集线器可通信地耦合并且被配置用于对所述第一组传感器数据和所述第二组传感器数据中的至少一个执行分析。

12. 发明申请

WO2011002810A3 METHODS FOR CONSTRUCTING AN OPTIMAL ENDPOINT ALGORITHM 审中-公开
标题翻译：构建最优端点算法的方法
公开(公告)号：WO2011002810A3
公开(公告)日：2011-04-14
申请号：PCT/US2010040477
申请日：2010-06-29
申请人： LAM RES CORP , WANG JIANGXIN , PERRY ANDREW JAMES , VENUGOPAL VIJAYAKUMAR C
发明人： WANG JIANGXIN , PERRY ANDREW JAMES , VENUGOPAL VIJAYAKUMAR C
IPC分类号： H01L21/66 , H01L21/00 , H01L21/3065
CPC分类号： H01J37/3299 , H01J37/32935
摘要： A method for automatically identifying an optimal endpoint algorithm for qualifying a process endpoint during substrate processing within a plasma processing system is provided. The method includes receiving sensor data from a plurality of sensors during substrate processing of at least one substrate within the plasma processing system, wherein the sensor data includes a plurality of signal streams from a plurality of sensor channels. The method also includes identifying an endpoint domain, wherein the endpoint domain is an approximate period within which the process endpoint is expected to occur. The method further includes analyzing the sensor data to generate a set of potential endpoint signatures. The method yet also includes converting the set of potential endpoint signatures into a set of optimal endpoint algorithms. The method yet further includes importing one optimal endpoint algorithm of the set of optimal endpoint algorithms into production environment.
摘要翻译：提供了一种用于在等离子体处理系统内的衬底处理期间自动识别用于限定过程端点的最佳端点算法的方法。该方法包括在等离子体处理系统内的至少一个衬底的衬底处理期间从多个传感器接收传感器数据，其中传感器数据包括来自多个传感器通道的多个信号流。该方法还包括识别端点域，其中端点域是期望发生处理端点的大概周期。该方法还包括分析传感器数据以产生一组潜在的端点签名。该方法还包括将潜在端点签名集合转换成一组最优端点算法。该方法还包括将一组最优端点算法的一个最优端点算法导入到生产环境中。

13. 发明申请

WO2004030050A2 APPARATUS AND METHOD FOR CONTROLLING ETCH DEPTH 审中-公开
标题翻译：用于控制蚀刻深度的装置和方法
公开(公告)号：WO2004030050A2
公开(公告)日：2004-04-08
申请号：PCT/US0330117
申请日：2003-09-18
申请人： LAM RES CORP , KAMP TOM A , MILLER ALAN J , VENUGOPAL VIJAYAKUMAR C
发明人： KAMP TOM A , MILLER ALAN J , VENUGOPAL VIJAYAKUMAR C
IPC分类号： H01L21/00 , H01L21/3065
CPC分类号： H01L21/67253 , H01J37/321 , H01J37/32963 , H01L21/3065 , H01L21/67069
摘要： An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.
摘要翻译：描述了用改进的深度控制和再现性来蚀刻晶片中的特征的设备和方法。该特征以第一蚀刻速率蚀刻，然后以比第一蚀刻速率慢的第二蚀刻速率蚀刻。使用光学终点设备来确定蚀刻深度并且停止蚀刻，使得该特征具有期望的深度。两种不同的蚀刻速率提供了高通量和良好的深度控制和可重复性。该设备包括蚀刻工具，在该蚀刻工具中，卡盘保持待蚀刻的晶片。定位光学终点设备以测量特征蚀刻深度。电子控制器与光学终点设备和蚀刻工具通信以控制工具通过蚀刻特征部分地减少蚀刻速率并且停止蚀刻工具，使得该特征被蚀刻到期望的深度。

14. 发明专利

SG189712A1 METHODS AND APPARATUS FOR NORMALIZING OPTICAL EMISSION SPECTRA 未知
公开(公告)号：SG189712A1
公开(公告)日：2013-05-31
申请号：SG2013022942
申请日：2009-04-03
申请人： LAM RES CORP
发明人： VENUGOPAL VIJAYAKUMAR C , PAPE ERIC , BOOTH JEAN-PAUL
摘要： METHODS AND APPARATUS FOR NORMALIZING OPTICAL EMISSION SPECTRAAn arrangement for in-situ optical interrogation of plasma emission to quantitatively measure normalized optical emission spectra in a plasma chamber is provided. The arrangement includes a flash lamp and a set of quartz windows. The arrangement also includes a plurality of collimated optical assemblies, which is optically coupled to the set of quartz windows. The arrangement further includes a plurality of fiber optic bundles, which comprises at least an illumination fiber optic bundle, a collection fiber optic bundle, and a reference fiber optic bundle. The arrangement more over includes a multi-channel spectrometer, which is configured with at least a signal channel and a reference channel. The signal channel is optically coupled to at least the flash lamp, the set of quartz windows, the set of collimated optical assemblies, the illuminated fiber optic bundle, and the collection fiber optic bundle to measure a first signal.FIG. 1

15. 发明专利

SG176566A1 METHODS FOR CONSTRUCTING AN OPTIMAL ENDPOINT ALGORITHM 未知
公开(公告)号：SG176566A1
公开(公告)日：2012-01-30
申请号：SG2011085149
申请日：2010-06-29
申请人： LAM RES CORP
发明人： WANG JIANGXIN , PERRY ANDREW JAMES , VENUGOPAL VIJAYAKUMAR C
摘要： A method for automatically identifying an optimal endpoint algorithm for qualifying a process endpoint during substrate processing within a plasma processing system is provided. The method includes receiving sensor data from a plurality of sensors during substrate processing of at least one substrate within the plasma processing system, wherein the sensor data includes a plurality of signal streams from a plurality of sensor channels. The method also includes identifying an endpoint domain, wherein the endpoint domain is an approximate period within which the process endpoint is expected to occur. The method further includes analyzing the sensor data to generate a set of potential endpoint signatures. The method yet also includes converting the set of potential endpoint signatures into a set of optimal endpoint algorithms. The method yet further includes importing one optimal endpoint algorithm of the set of optimal endpoint algorithms into production environment.

16. 发明专利

AU2003258170A1 METHOD FOR IN-SITU MONITORING OF PATTERNED SUBSTRATE PROCESSING USING REFLECTOMETRY 未知
公开(公告)号：AU2003258170A1
公开(公告)日：2004-02-25
申请号：AU2003258170
申请日：2003-08-12
申请人： LAM RES CORP
发明人： VENUGOPAL VIJAYAKUMAR C , PERRY ANDREW J
IPC分类号： G01B11/02 , G01B11/06 , G01N21/00 , G01N21/27 , G01N21/45 , H01L21/027 , H01L21/3065 , H01L21/334 , H01L21/8242 , H01L27/108 , H01L21/66
摘要： A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtaining a measured net reflectance of at least a portion of the substrate including the trench, computing a modeled net reflectance of the portion of the substrate as a weighted incoherent sum of reflectances from n1 different regions constituting the portion of the substrate, determining a set of parameters that provides a close match between the measured net reflectance and the modeled net reflectance, and extracting the first dimension from the set of parameters; computing an endpoint of the process as a function of the first dimension and a desired recess depth measured from the reference point; and etching down from a surface of the column of material until the endpoint is reached.

17. 发明专利

SG10201403275UA AUTOMATIC FAULT DETECTION AND CLASSIFICATION IN A PLASMA PROCESSING SYSTEM AND METHODS THEREOF 未知
公开(公告)号：SG10201403275UA
公开(公告)日：2014-09-26
申请号：SG10201403275U
申请日：2010-06-29
申请人： LAM RES CORP
发明人： YUN GUNSU , VENUGOPAL VIJAYAKUMAR C

18. 发明专利

SG176798A1 SEASONING PLASMA PROCESSING SYSTEMS 未知
公开(公告)号：SG176798A1
公开(公告)日：2012-01-30
申请号：SG2011091725
申请日：2010-08-26
申请人： LAM RES CORP
发明人： CHOI BRIAN , VENUGOPAL VIJAYAKUMAR C
摘要： A system for facilitating seasoning a plasma processing chamber. The system includes a computer-readable medium storing a chamber seasoning program (or CS program). The CS program includes code for receiving a first plurality of values and a second plurality of values of a set of parameters related to operation of the plasma processing chamber. The CS program includes code for ascertaining, using the first plurality of values and the second plurality of values, whether current values of the parameters have stabilized. The CS program also includes code for determining, using the second plurality of values but not the first plurality of values, whether the current values of parameters have stabilized within a predetermined range. The system may also include circuit hardware for performing one or more tasks associated with the CS program.

19. 发明专利

SG176147A1 METHODS AND ARRANGEMENTS FOR IN-SITU PROCESS MONITORING AND CONTROL FOR PLASMA PROCESSING TOOLS 未知
公开(公告)号：SG176147A1
公开(公告)日：2011-12-29
申请号：SG2011085107
申请日：2010-06-29
申请人： LAM RES CORP
发明人： VENUGOPAL VIJAYAKUMAR C , BENJAMIN NEIL MARTIN PAUL
摘要： An arrangement for implementing an automatic in-situ process control scheme during execution of a recipe is provided. The arrangement includes control-loop sensors configured at least for collecting a first set of sensor data to facilitate monitoring set points during the recipe execution, wherein the control-loop sensors being part of a process control loop. The arrangement also includes independent sensors configured at least for collecting a second set of sensor data, which is not part of the process control loop. The arrangement yet also includes a hub configured for at least receiving at least one of the first set of sensor data and the second set of sensor data. The arrangement yet further includes an analysis computer communicably coupled with the hub and configured for performing analysis of at least one of the first set of sensor data and the second set of sensor data.

20. 发明专利

SG176146A1 DETERMINING PLASMA PROCESSING SYSTEM READINESS WITHOUT GENERATING PLASMA 未知
公开(公告)号：SG176146A1
公开(公告)日：2011-12-29
申请号：SG2011085099
申请日：2010-06-09
申请人： LAM RES CORP
发明人： CHOI BRIAN , YUN GUNSU , VENUGOPAL VIJAYAKUMAR C , WILLIAMS NORMAN
摘要： A test system for facilitating determining whether a plasma processing system (which includes a plasma processing chamber) is ready for processing wafers. The test system may include a computer-readable medium storing at least a test program. The test program may include code for receiving electric parameter values derived from signals detected by at least one sensor when no plasma is present in the plasma processing chamber. The test program may also include code for generating electric model parameter values using the electric parameter values and a mathematical model. The test program may also include code for comparing the electric model parameter values with baseline model parameter value information. The test program may also include code for determining readiness of the plasma processing system based on the comparison. The test system may also include circuit hardware for performing one or more tasks associated with the test program.

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