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11. 发明申请

WO2007038030A2 APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从底物中除去氟化聚合物的装置及其方法
公开(公告)号：WO2007038030A2
公开(公告)日：2007-04-05
申请号：PCT/US2006036139
申请日：2006-09-15
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
IPC分类号： H01L21/302 , G03C1/00 , H01L21/461
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当空腔中存在等离子体时，第一电线网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

12. 发明申请

WO2008027215A3 APPARATUS AND METHOD FOR INTEGRATED SURFACE TREATMENT AND DEPOSITION FOR COPPER INTERCONNECT 审中-公开
标题翻译：用于铜互连的集成表面处理和沉积的装置和方法
公开(公告)号：WO2008027215A3
公开(公告)日：2008-11-13
申请号：PCT/US2007018254
申请日：2007-08-17
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BOYD JOHN M , KOROLIK MIKHAIL , DORDI YEZDI , REDEKER FRITZ C
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN M , KOROLIK MIKHAIL , DORDI YEZDI , REDEKER FRITZ C
IPC分类号： C23C16/00
CPC分类号： H01L21/67207 , C23C16/0227 , C23C16/452 , C23C16/45514 , C23C16/45517 , C23C16/45551 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76868
摘要： The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.
摘要翻译：这些实施例提供了集成设备和方法，其为铜互连执行衬底表面处理和膜沉积，具有改善的金属迁移性能和减少的空穴传播。在一个示例性实施例中，提供了用于执行表面处理和膜沉积的腔室。腔室包括用于基板表面处理的第一接近头，其配置成分配第一处理气体以处理用于基板表面处理的第一接近头下方的基板表面的一部分。腔室还包括用于原子层沉积（ALD）的第一接近头，其被配置为顺序地分配第一反应物气体和第一吹扫气体以在用于ALD的第二接近头下面沉积第一ALD膜。

13. 发明申请

WO2007038514B1 APPARATUS AND METHOD FOR SUBSTRATE EDGE ETCHING 审中-公开
标题翻译：用于基底边缘蚀刻的装置和方法
公开(公告)号：WO2007038514B1
公开(公告)日：2008-11-06
申请号：PCT/US2006037492
申请日：2006-09-26
申请人： LAM RES CORP , KIM YUNSANG , BAILEY III ANDREW D , YOON HYUNGSUK ALEXANDER
发明人： KIM YUNSANG , BAILEY III ANDREW D , YOON HYUNGSUK ALEXANDER
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , H01J37/321 , H01J37/32623
摘要： A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.
摘要翻译：公开了一种等离子体处理系统，其包括用于处理基板的等离子体室。该设备包括配置用于支撑衬底的第一表面的卡盘。所述设备还包括抗等离子体阻挡层，所述抗等离子体阻挡层相对于所述衬底的第二表面以间隔关系设置，所述第二表面与所述第一表面相对，所述抗等离子体阻挡层基本上屏蔽所述衬底的中心部分并留下环形衬底的第二表面的外围区域基本上未被等离子体阻挡屏障遮蔽。该装置还包括至少一个通电电极，该通电电极与抗等离子体阻挡层协同操作以从等离子体气体生成受限等离子体，该受限等离子体基本上被限制在衬底的环形周边部分并且远离衬底。

14. 发明申请

WO2008027205A3 SELF ASSEMBLED MONOLAYER FOR IMPROVING ADHESION BETWEEN COPPER AND BARRIER LAYER 审中-公开
标题翻译：自组装单层膜用于改善铜与阻隔层之间的粘附性
公开(公告)号：WO2008027205A3
公开(公告)日：2008-04-24
申请号：PCT/US2007018212
申请日：2007-08-15
申请人： LAM RES CORP , NALLA PRAVEEN , THIE WILLIAM , BOYD JOHN , ARUNAGIRI TIRUCHIRAPALLI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C , DORDI YEZDI
发明人： NALLA PRAVEEN , THIE WILLIAM , BOYD JOHN , ARUNAGIRI TIRUCHIRAPALLI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C , DORDI YEZDI
IPC分类号： C23F11/00 , H01L21/302 , H01L21/312
CPC分类号： C23C16/45525 , C23C16/18 , H01L21/288 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76861
摘要： The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.
摘要翻译：这些实施例满足了能够在铜互连中沉积薄且共形的阻挡层以及铜层的需要，其具有良好的电迁移性能并且具有降低的应力诱发铜互连空洞的风险。电迁移和应力引起的空洞受阻挡层和铜层之间的粘附影响。功能化层沉积在阻挡层上以使铜层能够沉积在铜互连中。官能化层与阻挡层和铜形成牢固的结合，以改善两层之间的粘合性能。提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以帮助在铜互连中沉积铜层以改善铜互连的电迁移性能的示例性方法。该方法包括沉积金属阻挡层以使集成系统中的铜互连结构排成线，并且氧化金属阻挡层的表面。该方法还包括在金属阻挡层的氧化表面上沉积功能化层，并且在功能化层沉积在金属阻挡层上之后将铜层沉积在铜互连结构中。

15. 发明申请

WO2007038054A3 APPARATUS FOR THE REMOVAL OF AN EDGE POLYMER FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从基材上除去边缘聚合物的装置及其方法
公开(公告)号：WO2007038054A3
公开(公告)日：2007-05-31
申请号：PCT/US2006036323
申请日：2006-09-15
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , KIM YUNSANG , RYDER JASON A , BAILEY III ANDREW D
发明人： YOON HYUNGSUK ALEXANDER , KIM YUNSANG , RYDER JASON A , BAILEY III ANDREW D
IPC分类号： H01L21/203 , H01L21/461
CPC分类号： H01L21/02087 , H01J37/32541 , H01J37/3255 , H05H1/2406 , H05H2001/2412
摘要： An apparatus generating a plasma for removing an edge polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the edge polymer.
摘要翻译：公开了一种产生等离子体以从衬底去除边缘聚合物的设备。该实施例包括供电电极组件，该供电电极组件包括供电电极，第一介电层以及设置在供电电极和第一介电层之间的第一金属丝网。该实施例还包括与电源电极组件相对设置的接地电极组件，以便形成产生等离子体的空腔，当等离子体存在于空腔中时，第一电介质层被等离子体与等离子体屏蔽，腔在一端具有出口以提供等离子体以去除边缘聚合物。

16. 发明申请

WO2006098888A2 PLASMA OXIDATION AND REMOVAL OF OXIDIZED MATERIAL 审中-公开
标题翻译：等离子体氧化和去除氧化材料
公开(公告)号：WO2006098888A2
公开(公告)日：2006-09-21
申请号：PCT/US2006007401
申请日：2006-02-27
申请人： LAM RES CORP , KIM YUNSANG , BAILEY ANDREW III , YOON HYUNGSUK ALEXANDER , HOWALD ARTHUR M
发明人： KIM YUNSANG , BAILEY ANDREW III , YOON HYUNGSUK ALEXANDER , HOWALD ARTHUR M
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/7684 , H01L21/31683 , H01L21/321 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/32138 , H01L21/32139 , H01L21/76865 , H01L21/76885
摘要： A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.
摘要翻译：蚀刻导电层的方法包括转换导电层的至少一部分并蚀刻导电层，以基本上去除导电层的转换部分，从而暴露出剩余的表面。剩余的表面具有小于约10nm的平均表面粗糙度。还公开了用于蚀刻导电层的系统。

17. 发明专利

MY171542A PROCESSES AND INTEGRATED SYSTEMS FOR ENGINEERING A SUBSTRATE SURFACE FOR METAL DEPOSITION 未知
公开(公告)号：MY171542A
公开(公告)日：2019-10-17
申请号：MYPI2012004997
申请日：2007-08-17
申请人： LAM RES CORP
发明人： THIE WILLIAM , JOHN BOYD , ARUNAGIRI TIRUCHIRAPALLI , REDEKER FRITZ C , DORDI YEZDI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
IPC分类号： B05D1/18
摘要： The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system (450) to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

18. 发明专利

SG182143A1 METHODS OF FABRICATING ELECTRONIC DEVICES USING DIRECT COPPER PLATING 未知
公开(公告)号：SG182143A1
公开(公告)日：2012-07-30
申请号：SG2012039798
申请日：2008-06-02
申请人： LAM RES CORP
发明人： YOON HYUNGSUK ALEXANDER , REDECKER FRITZ
摘要： The present invention relates to methods and structures for the metallization of semiconductor devices. One aspect of the present invention is a method of forming a semiconductor device having copper metallization. In one embodiment, the method includes providing a patterned wafer having a diffusion barrier for copper; depositing a copperless seed layer on the diffusion barrier effective for electrochemical deposition of gapfill copper. The seed layer is formed by a conformal deposition process and by a nonconformal deposition process. The method further includes electroplating copper gapfill onto the seed layer. Another aspect of the invention includes electronic devices made using methods and structures according to embodiments of the present invention,[FIG.1]

19. 发明专利

MY149595A APPARATUS FOR ISOLATED BEVEL EDGE CLEAN AND METHOD FOR USING THE SAME 未知
公开(公告)号：MY149595A
公开(公告)日：2013-09-13
申请号：MYPI20084358
申请日：2007-05-04
申请人： LAM RES CORP
发明人： YOON HYUNGSUK ALEXANDER , BAILEY ANDREW D III , RYDER JASON A , WILCOXSON MARK H , GASPARITSCH JEFFREY G , JOHNSON RANDY , HOFFMANN STEPHAN P
IPC分类号： B08B7/00
摘要： AN APPARATUS, SYSTEM AND METHOD FOR CLEANING A SUBSTRATE EDGE (101) INCLUDE A BRISTLE BRUSH UNIT (200) THAT CLEANS BEVEL POLYMERS (103) DEPOSITED ON SUBSTRATE EDGES USING FRICTIONAL CONTACT IN THE PRESENCE OF CLEANING CHEMISTRY. THE BRISTLE BRUSH UNIT IS MADE UP OF A PLURALITY OF OUTWARDLY EXTENDING VANES (201) AND IS MOUNTED ON A ROTATING SHAFT (202). AN ABRASIVE MATERIAL IS DISTRIBUTED THROUGHOUT AND WITHIN THE OUTWARDLY EXTENDING VANES OF THE BRISTLE BRUSH UNIT TO PROVIDE THE FRICTIONAL CONTACT. THE BRISTLE BRUSH UNIT CLEANS THE EDGE OF THE SUBSTRATE BY ALLOWING FRICTIONAL CONTACT OF THE PLURALITY OF ABRASIVE PARTICLES WITH THE EDGE OF THE SUBSTRATE IN THE PRESENCE OF FLUIDS, SUCH AS CLEANING CHEMISTRY, TO CUT, RIP AND TEAR THE BEVEL POLYMER FROM THE EDGE OF THE SUBSTRATE.

20. 发明专利

SG174751A1 APPARATUS AND METHOD FOR INTEGRATED SURFACE TREATMENT AND DEPOSITION FOR COPPER INTERCONNECT 未知
公开(公告)号：SG174751A1
公开(公告)日：2011-10-28
申请号：SG2011062189
申请日：2007-08-17
申请人： LAM RES CORP
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN M , KOROLIK MIKHAIL , DORDI YEZDI , REDEKER FRITZ C
摘要： OF THE DISCLOSURE[109] The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.Figure 9A

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