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11. 发明申请

US20060226416A1 Nitride semiconductor device 审中-公开
标题翻译：氮化物半导体器件
公开(公告)号：US20060226416A1
公开(公告)日：2006-10-12
申请号：US11332688
申请日：2006-01-13
申请人： Kyu Lee , Je Kim , Dong Kim
发明人： Kyu Lee , Je Kim , Dong Kim
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06 , H01S5/2004 , H01S5/3095 , H01S5/3412 , H01S5/34333
摘要： The invention relates to a nitride semiconductor device having electron-emitting. In the device, an n-type nitride semiconductor layer is formed over a substrate, and an active layer is formed over the n-type nitride semiconductor layer. Also, a p-type nitride semiconductor layer is formed on the active layer. The active layer is formed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer and includes a quantum well layer and a quantum barrier layer. Further, an electron-emitting layer is formed between the n-type nitride semiconductor layer and the active layer. The electron-emitting layer includes a nitride semiconductor quantum dot layer formed on the n-type nitride semiconductor layer and having a composition expressed by AlXInyGa1-X-y)N, where 0≦x≦1 and 0≦y≦1, and a resonance tunnel layer formed on the nitride semiconductor quantum dot layer and having energy band gap bigger than that of adjacent quantum dot layer.
摘要翻译：本发明涉及具有电子发射的氮化物半导体器件。在器件中，在衬底上形成n型氮化物半导体层，并且在n型氮化物半导体层上形成有源层。此外，在有源层上形成p型氮化物半导体层。有源层形成在p型氮化物半导体层和n型氮化物半导体层之间，包括量子阱层和量子势垒层。此外，在n型氮化物半导体层和有源层之间形成电子发射层。电子发射层包括形成在n型氮化物半导体层上的氮化物半导体量子点层，并且具有由Al x In 1 Y 1 Ga -Xy）N，其中0 <= x <= 1且0 <= y <= 1，以及形成在氮化物半导体量子点层上并具有大于相邻量子能带隙的能带隙的谐振隧道层点层。

12. 发明申请

US20060079073A1 FABRICATION METHOD OF NITRIDE SEMICONDUCTORS AND NITRIDE SEMICONDUCTOR STRUCTURE FABRICATED THEREBY 失效
标题翻译：氮化物半导体和氮化物半导体结构的制造方法
公开(公告)号：US20060079073A1
公开(公告)日：2006-04-13
申请号：US11235278
申请日：2005-09-27
申请人： Sun Kim , In Kim , Hun Hahm , Soo Lee , Dong Kim , Je Kim
发明人： Sun Kim , In Kim , Hun Hahm , Soo Lee , Dong Kim , Je Kim
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
摘要翻译：公开了一种在MOCVD反应器中制造氮化物半导体的方法。首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。在氮化蓝宝石衬底上生长氮化物半导体层。通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

13. 发明申请

US20060060880A1 Nitride semiconductor light emitting device having electrostatic discharge(ESD) protection capacity 有权
标题翻译：氮化物半导体发光器件具有静电放电（ESD）保护能力
公开(公告)号：US20060060880A1
公开(公告)日：2006-03-23
申请号：US11053906
申请日：2005-02-10
申请人： Kyu Lee , Hyun Kim , Je Kim , Dong Kim
发明人： Kyu Lee , Hyun Kim , Je Kim , Dong Kim
IPC分类号： H01L29/22
CPC分类号： H01L27/15 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.
摘要翻译：一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层在第一个地区。在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物半导体层。

14. 发明申请

US20050179027A1 Nitride based semiconductor light-emitting device 审中-公开
标题翻译：氮化物基半导体发光器件
公开(公告)号：US20050179027A1
公开(公告)日：2005-08-18
申请号：US10890215
申请日：2004-07-14
申请人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
发明人： Je Kim , Jeong Oh , Dong Kim , Sun Kim , Jin Park , Kyu Lee
IPC分类号： H01L29/06 , H01L33/06 , H01L33/32
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1−AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0

15. 发明申请

US20050133812A1 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效
标题翻译：由此制造氮化物半导体的制造方法和氮化物半导体结构
公开(公告)号：US20050133812A1
公开(公告)日：2005-06-23
申请号：US10806432
申请日：2004-03-23
申请人： Sun Kim , In Kim , Hun Hahm , Soo Lee , Dong Kim , Je Kim
发明人： Sun Kim , In Kim , Hun Hahm , Soo Lee , Dong Kim , Je Kim
IPC分类号： C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L29/225
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
摘要翻译：公开了一种在MOCVD反应器中制造氮化物半导体的方法。首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。在氮化蓝宝石衬底上生长氮化物半导体层。通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

16. 发明申请

US20070059440A1 Method for manufacturing plasma display panel 审中-公开
标题翻译：等离子显示面板制造方法
公开(公告)号：US20070059440A1
公开(公告)日：2007-03-15
申请号：US11519203
申请日：2006-09-12
申请人： Dae Park , Kyung Kim , Byung Seo , Min Park , Won Jeon , Dong Shin , Deok Park , Hong Lee , Je Kim , Byung Ryu
发明人： Dae Park , Kyung Kim , Byung Seo , Min Park , Won Jeon , Dong Shin , Deok Park , Hong Lee , Je Kim , Byung Ryu
IPC分类号： H05K3/00 , B05D5/12 , C23C28/00
CPC分类号： C23C26/00 , H01J9/02 , H01J2217/49207
摘要： A method for manufacturing a plasma display panel is disclosed. The plasma display panel manufacturing method includes forming an electrode material on a dielectric sheet, and transcribing the dielectric sheet and electrode material on a substrate simultaneously.
摘要翻译：公开了一种制造等离子体显示面板的方法。等离子体显示面板的制造方法包括在电介质片上形成电极材料，同时将基片和电极材料转印在基片上。

17. 发明申请

US20070013311A1 Dielectric sheet, plasma display panel using the same, and manufacturing method therefor 失效
标题翻译：电介质片，使用其的等离子体显示面板及其制造方法
公开(公告)号：US20070013311A1
公开(公告)日：2007-01-18
申请号：US11482196
申请日：2006-07-07
申请人： Won Moon , Byung Seo , Bo Kim , Won Jeon , Je Kim , Byung Ryu
发明人： Won Moon , Byung Seo , Bo Kim , Won Jeon , Je Kim , Byung Ryu
IPC分类号： H01J17/49
CPC分类号： H01J11/38 , H01J9/02 , H01J11/12
摘要： A dielectric sheet having two layers made of different materials for forming a differential dielectric sheet on a plasma display panel, a plasma display panel using the same, and a manufacturing method therefor.
摘要翻译：具有由等离子体显示面板上形成差分电介质的不同材料制成的两层的电介质片，使用其的等离子体显示面板及其制造方法。

18. 发明申请

US20060038955A1 Sheet for manufacturing plasma display apparatus and method for manufacturing plasma display 失效
公开(公告)号：US20060038955A1
公开(公告)日：2006-02-23
申请号：US11206844
申请日：2005-08-19
申请人： Je Kim , Dae Park
发明人： Je Kim , Dae Park
IPC分类号： G02F1/1333
CPC分类号： H01J9/02 , H01J11/10 , H01J11/22 , H01J2211/444 , Y10T29/49124 , Y10T428/24
摘要： Provided are a sheet for manufacturing a plasma display apparatus, and a method for manufacturing the plasma display apparatus. The sheet includes a base film; a photoresist layer formed on the base film; an electrode material layer formed on the photoresist layer; and a cover film formed on the electrode material layer.

19. 发明申请

US20070103075A1 Green sheet for black layers, plasma display panels using the green sheet and methods for fabricating the plasma display panels 审中-公开
标题翻译：用于黑色层的绿色片材，使用生片的等离子体显示面板和用于制造等离子体显示面板的方法
公开(公告)号：US20070103075A1
公开(公告)日：2007-05-10
申请号：US11593634
申请日：2006-11-07
申请人： Je Kim , Dae Park , Byung Seo , Moon Song , Byung Ryu , Won Jeon , Hong Lee
发明人： Je Kim , Dae Park , Byung Seo , Moon Song , Byung Ryu , Won Jeon , Hong Lee
IPC分类号： H01J17/49
CPC分类号： H01J11/44 , H01J9/02 , H01J9/2278 , H01J9/242 , H01J11/12 , H01J2211/36 , H01J2211/38 , H01J2211/444
摘要： A plasma display panel with improved brightness and reduced discharge voltage is disclosed. The plasma display panel comprises an upper panel and a lower panel facing each other through barrier ribs wherein a first dielectric layer is formed on the upper panel and second dielectric layers containing a black pigment are formed by patterning on the first dielectric layer.
摘要翻译：公开了一种具有改善的亮度和降低的放电电压的等离子体显示面板。等离子体显示面板包括通过障壁彼此面对的上面板和下面板，其中第一介电层形成在上面板上，并且包含黑色颜料的第二介电层通过图案化形成在第一介电层上。

20. 发明申请

US20070057637A1 Plasma display panel and method for forming electrode thereof 审中-公开
标题翻译：等离子显示面板及其电极形成方法
公开(公告)号：US20070057637A1
公开(公告)日：2007-03-15
申请号：US11518498
申请日：2006-09-11
申请人： Dae Park , Kyung Kim , Byung Seo , Min Park , Won Jeon , Dong Shin , Deok Park , Hong Lee , Je Kim , Byung Ryu
发明人： Dae Park , Kyung Kim , Byung Seo , Min Park , Won Jeon , Dong Shin , Deok Park , Hong Lee , Je Kim , Byung Ryu
IPC分类号： H01J17/49 , B23P19/00
CPC分类号： H01J11/24 , G09G3/288 , G09G2300/0426 , H01J9/02 , H01J11/12 , H01J11/46 , H01J2211/245 , Y10T29/53204
摘要： A method for manufacturing a plasma display panel is disclosed. In the plasma display panel including upper and lower panels bonded to face each other with barrier ribs therebetween, at least one of electrodes formed on the upper and lower panels has a ratio of width to thickness in a range of 5:1˜50:1.
摘要翻译：公开了一种制造等离子体显示面板的方法。在等离子体显示面板中，包括彼此面对的具有阻挡肋的彼此面对的上板和下板，形成在上板和下板上的至少一个电极的宽度与厚度之比在5:1〜50:1的范围内。

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