专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07202144B2 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US07202144B2
公开(公告)日：2007-04-10
申请号：US11007188
申请日：2004-12-09
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L21/20
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

12. 发明申请

US20050244996A1 Method for fabricating image display device 有权
标题翻译：图像显示装置的制造方法
公开(公告)号：US20050244996A1
公开(公告)日：2005-11-03
申请号：US11172958
申请日：2005-07-05
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
摘要翻译：提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。形成在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR 1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光光束被重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的分立的重整区域。在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等的有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致电影。

13. 发明申请

US20050170618A1 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US20050170618A1
公开(公告)日：2005-08-04
申请号：US11007188
申请日：2004-12-09
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： G02F1/1368 , C30B1/06 , G02F1/133 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

14. 发明授权

US07456428B2 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US07456428B2
公开(公告)日：2008-11-25
申请号：US11711623
申请日：2007-02-28
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L29/04
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μos。

15. 发明授权

US07262821B2 LCD with first and second circuit regions each with separately optimized transistor properties 有权
标题翻译： LCD具有第一和第二电路区域，每个具有单独优化的晶体管特性
公开(公告)号：US07262821B2
公开(公告)日：2007-08-28
申请号：US10772431
申请日：2004-02-06
申请人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
发明人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
IPC分类号： G02F1/136
CPC分类号： H01L27/1296 , G02F1/13624 , G02F1/136277 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78627
摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.
摘要翻译：大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。

16. 发明授权

US07192852B2 Method for fabricating image display device 有权
公开(公告)号：US07192852B2
公开(公告)日：2007-03-20
申请号：US11172958
申请日：2005-07-05
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

17. 发明授权

US08338867B2 Highly sensitive photo-sensing element and photo-sensing device using the same 有权
标题翻译：高灵敏度感光元件和使用其的感光元件
公开(公告)号：US08338867B2
公开(公告)日：2012-12-25
申请号：US13236338
申请日：2011-09-19
申请人： Mitsuharu Tai , Hideo Sato , Mutsuko Hatano , Masayoshi Kinoshita
发明人： Mitsuharu Tai , Hideo Sato , Mutsuko Hatano , Masayoshi Kinoshita
IPC分类号： H01L31/062
CPC分类号： H01L27/1214 , G09G2360/14 , H01L31/1136
摘要： According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo transistor is formed by using TFT, which comprises a first electrode 11 prepared on an insulating substrate 10, a photoelectric conversion region 14 and a second electrode 12, and a third electrode 13 disposed above the photoelectric conversion region 14. An impurity layer positioned closer to an intrinsic layer (density of active impurities is 1017 cm−3 or lower) is provided on the regions 15 and 16 on both sides under the third electrode 13 or on one of the regions 15 or 16 on one side.
摘要翻译：根据本发明，通过仅使用多晶材料，通过平面法在绝缘基板上制备高灵敏度的感光元件和传感器驱动电路。感光元件和传感器驱动电路都由多晶硅膜制成。作为感光元件，通过使用TFT形成光电晶体管，该TFT包括在绝缘基板10上制备的第一电极11，光电转换区域14和第二电极12以及设置在光电转换器之上的第三电极13 在第三电极13下方的区域15和16上，或者在区域15或16中的一个区域上设置位于更接近本征层（活性杂质的密度为1017cm-3或更低）的杂质层。在一边。

18. 发明授权

US07939826B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07939826B2
公开(公告)日：2011-05-10
申请号：US12258738
申请日：2008-10-27
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜110％的范围内。

19. 发明授权

US07442958B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07442958B2
公开(公告)日：2008-10-28
申请号：US11768588
申请日：2007-06-26
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/76
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

20. 发明授权

US07256423B2 Thin film semiconductor device 有权
标题翻译：薄膜半导体器件
公开(公告)号：US07256423B2
公开(公告)日：2007-08-14
申请号：US11186907
申请日：2005-07-22
申请人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya Yamaguchi , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L29/10
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device which includes an insulating substrate, a semiconductor polycrystal thin film formed over the substrate and a transistor with the thin film as a channel. The polycrystal includes a plurality of crystal grains, with grain boundaries between the crystal grains being recessed. The grain boundaries with the recessed surfaces are the most predominant of all grain boundaries within the channel. With this structure, the polycrystal can be a low temperature polycrystal that can be formed at a temperature of 150° C. or less, thereby achieving a low-cost device with high carrier mobility.
摘要翻译：一种薄膜半导体器件，其包括绝缘衬底，形成在衬底上的半导体多晶体薄膜和具有薄膜作为沟道的晶体管。多晶体包括多个晶粒，晶粒之间的晶界是凹陷的。具有凹陷表面的晶界是通道内所有晶界的最主要的。利用该结构，多晶体可以是能够在150℃以下的温度下形成的低温多晶体，从而实现具有高载流子迁移率的低成本器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式