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11. 发明申请

US20090175072A1 PHASE-CHANGE RANDOM ACCESS MEMORY DEVICES AND RELATED METHODS OF OPERATION 有权
标题翻译：相变随机访问存储器件及其相关操作方法
公开(公告)号：US20090175072A1
公开(公告)日：2009-07-09
申请号：US12350344
申请日：2009-01-08
申请人： Chang-han Choi , Ho-keun Cho , Byung-gil Choi , Ki-sung Kim , Jong-chul Park , Jong-soo Seo
发明人： Chang-han Choi , Ho-keun Cho , Byung-gil Choi , Ki-sung Kim , Jong-chul Park , Jong-soo Seo
IPC分类号： G11C11/00 , G11C8/00 , G11C29/00
CPC分类号： G11C29/24 , G11C13/0004
摘要： A phase-change random access memory (PRAM) device includes a plurality of banks, a plurality of column redundancy cell arrays, and a plurality of column redundancy write drivers. Each of the plurality of column redundancy cell arrays corresponds to at least one of the banks. Each of the plurality of column redundancy write drivers corresponds to at least one of the column redundancy cell arrays. The column redundancy write drivers are configured to transmit respective redundancy test data to the corresponding ones of the column redundancy cell arrays in response to a test control signal, which may be activated in response to each program pulse for writing data. Related test and access methods are also discussed.
摘要翻译：相变随机存取存储器（PRAM）装置包括多个存储体，多个列冗余单元阵列和多个列冗余写入驱动器。多个列冗余单元阵列中的每一个对应于至少一个存储体。多个列冗余写入驱动器中的每一个对应于列冗余单元阵列中的至少一个。列冗余写入驱动器被配置为响应于可以响应于用于写入数据的每个编程脉冲激活的测试控制信号将相应的冗余测试数据发送到列冗余单元阵列中的对应的冗余测试数据。还讨论了相关的测试和访问方法。

12. 发明申请

US20070147455A1 End pumping vertical external cavity surface emitting laser apparatus 有权
标题翻译：垂直外腔表面发射激光装置
公开(公告)号：US20070147455A1
公开(公告)日：2007-06-28
申请号：US11508166
申请日：2006-08-23
申请人： Jun-youn Kim , Ki-sung Kim
发明人： Jun-youn Kim , Ki-sung Kim
IPC分类号： H01S3/04 , H01S5/00 , H01S3/091 , H01S3/08 , H01S3/092
CPC分类号： H01S5/041 , H01S5/0213 , H01S5/024 , H01S5/028 , H01S5/14 , H01S5/18305 , H01S5/18383
摘要： Provided is a vertical cavity external surface emitting laser (VECSEL) apparatus in which incidence loss of a pumping beam can be reduced. The VECSEL apparatus includes: a laser chip including: an anti-reflection coating (ARC) layer to which a pumping beam is incident; a low Herpin Index distributed Bragg reflector (LHI-DBR) having a LHI stack structure; and a periodic gain layer that is formed on the LHI-DBR and generates laser light by being excited by the pumping beam; and an external cavity mirror that is installed outside the laser chip and faces the periodic gain layer and constitutes a laser cavity with the LHI-DBR.
摘要翻译：提供了一种垂直腔外表面发射激光器（VECSEL）装置，其中可以减小泵浦光束的入射损失。 VECSEL装置包括：激光芯片，包括：泵送光束入射的防反射涂层（ARC）层; 具有LHI堆叠结构的低Herpin索引分布布拉格反射器（LHI-DBR）; 以及形成在LHI-DBR上的周期性增益层，并且由泵浦光束激发产生激光; 以及安装在激光芯片外部并面向周期性增益层并且与LHI-DBR构成激光腔的外腔镜。

13. 发明申请

US20070058688A1 End pumping vertical external cavity surface emitting laser 审中-公开
标题翻译：端泵浦垂直外腔表面发射激光
公开(公告)号：US20070058688A1
公开(公告)日：2007-03-15
申请号：US11446153
申请日：2006-06-05
申请人： Ki-sung Kim , Taek Kim
发明人： Ki-sung Kim , Taek Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/18377 , H01S5/041 , H01S5/14 , H01S5/18369
摘要： A vertical external cavity surface emitting laser (VECSEL) is provided, in which the incident loss of a pumping beam is reduced. The VECSEL device comprising: a transparent substrate; an optical pump radiating a pumping beam onto a first surface of the transparent substrate; a first anti-reflection coating (ARC) layer formed of a first light-transmitting insulating material on a second surface of the transparent substrate to reduce loss of the pumping beam; a distributed Bragg reflector (DBR) layer formed on the first ARC layer; a periodic gain layer formed on the DBR layer; and an external cavity mirror facing the periodic gain layer.
摘要翻译：提供了垂直的外腔表面发射激光器（VECSEL），其中泵浦光束的入射损耗减小。所述VECSEL装置包括：透明基板; 将泵浦光束辐射到所述透明基板的第一表面上的光泵; 在所述透明基板的第二表面上由第一透光绝缘材料形成的第一抗反射涂层（ARC）层，以减少所述泵浦光束的损耗; 形成在第一ARC层上的分布式布拉格反射器（DBR）层; 形成在DBR层上的周期增益层; 以及面向周期性增益层的外腔镜。

14. 发明申请

US20060176924A1 Semiconductor light emitting device having effective cooling structure and method of manufacturing the same 审中-公开
标题翻译：具有有效冷却结构的半导体发光器件及其制造方法
公开(公告)号：US20060176924A1
公开(公告)日：2006-08-10
申请号：US11345333
申请日：2006-02-02
申请人： Ki-sung Kim , Jun-ho Lee
发明人： Ki-sung Kim , Jun-ho Lee
IPC分类号： H01S5/00
CPC分类号： H01S5/024 , H01L33/642 , H01S3/109 , H01S5/02476 , H01S5/141 , H01S5/18308 , H01S5/18311 , H01S5/18327 , H01S5/18377 , H01S5/2072 , H01S5/3095 , H01S2301/173 , H01S2304/00
摘要： A semiconductor light emitting device having a high heat emission efficiency and a method of manufacturing the same without reducing the light emission efficiency are provided. The semiconductor light emitting device includes a substrate, a thermal spreading layer formed on the substrate and patterned with predetermined gaps, a planarizing layer having a planarizing surface covering the thermal spreading layer, and a light emitting unit formed on the planarizing layer.
摘要翻译：提供了具有高发热效率的半导体发光器件及其制造方法而不降低发光效率。半导体发光器件包括：衬底，形成在衬底上并用预定间隙图案化的热扩散层，具有覆盖热扩散层的平坦化表面的平坦化层和形成在平坦化层上的发光单元。

15. 发明申请

US20130023080A1 CHEMICAL VAPOR DEPOSITION AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE USING CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：化学蒸气沉积和使用化学蒸气沉积制造发光装置的方法
公开(公告)号：US20130023080A1
公开(公告)日：2013-01-24
申请号：US13358189
申请日：2012-01-25
申请人： Bum-joon KIM , Ki-sung Kim , Young-sun Kim , Doek-gil Ko , Jin-young Lim , Eui-joon Jeong
发明人： Bum-joon KIM , Ki-sung Kim , Young-sun Kim , Doek-gil Ko , Jin-young Lim , Eui-joon Jeong
IPC分类号： H01L21/205 , H01L33/06
CPC分类号： H01L21/02458 , C23C16/303 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/0062 , H01L33/32
摘要： A chemical vapor deposition (CVD) method includes forming a first semiconductor layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a second semiconductor layer on the first semiconductor layer at a second process temperature. Also, a method of manufacturing a light-emitting device (LED) includes: forming a quantum well layer on a substrate that is mounted on a satellite disk at a first process temperature; and forming a quantum barrier layer on the quantum well layer at a second process temperature.
摘要翻译：化学气相沉积（CVD）方法包括在第一工艺温度下在安装在卫星盘上的衬底上形成第一半导体层; 以及在第二处理温度下在所述第一半导体层上形成第二半导体层。此外，制造发光器件（LED）的方法包括：在第一工艺温度下安装在卫星盘上的衬底上形成量子阱层; 以及在第二工艺温度下在量子阱层上形成量子势垒层。

16. 发明申请

US20070104241A1 Vertical external cavity surface emitting laser with pump beam reflector 有权
标题翻译：垂直外腔表面发射激光器与泵浦反射器
公开(公告)号：US20070104241A1
公开(公告)日：2007-05-10
申请号：US11448774
申请日：2006-06-08
申请人： Ki-sung Kim , Taek Kim
发明人： Ki-sung Kim , Taek Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/183 , H01S3/094084 , H01S3/109 , H01S5/024 , H01S5/041 , H01S5/141
摘要： A vertical external cavity surface emitting laser (VECSEL) using end pumping in which a pumping beam is recycled using a pumping beam reflection layer to increase pumping beam absorption is provided. The VECSEL includes: an active layer for generating and emitting signal light; an external mirror that is separated from and faces a top surface of the active layer and transmits a first portion of the signal light and reflects a second portion of the signal light to the active layer; a first reflection layer contacting a lower surface of the active layer and reflecting the signal light to the external mirror; a pump laser for emitting the pumping beam toward the lower surface of the active layer to excite the active layer; and a second reflection layer contacting the top surface of the active layer and reflecting a portion of the pumping beam back to the active layer.
摘要翻译：提供了使用端泵浦的垂直外腔表面发射激光器（VECSEL），其中泵浦光束使用泵浦光束反射层再循环以增加泵浦光束吸收。 VECSEL包括：用于产生和发射信号光的有源层; 外部反射镜，其与有源层的顶表面分离并且面对有源层的顶表面，并且透射信号光的第一部分并将信号光的第二部分反射到有源层; 接触有源层的下表面并将信号光反射到外部反射镜的第一反射层; 泵浦激光器，用于朝着有源层的下表面发射泵浦光束以激发有源层; 以及与有源层的顶表面接触并将泵浦光束的一部分反射回有源层的第二反射层。

17. 发明授权

US07202099B2 Method of fabricating a laser diode that includes thermally cleaning a deposition reactor using a gas mixture of arsine and hydrogen 有权
标题翻译：制造激光二极管的方法包括使用胂和氢的气体混合物热沉积沉积反应器
公开(公告)号：US07202099B2
公开(公告)日：2007-04-10
申请号：US11000895
申请日：2004-12-02
申请人： Ki-sung Kim , Yong-jo Park
发明人： Ki-sung Kim , Yong-jo Park
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/0014 , H01S5/183 , H01S5/34306 , H01S2304/04 , Y10S438/905
摘要： Provided is a method of fabricating a laser diode including a lower Al-containing semiconductor material layer, a active layer, and an upper Al-containing semiconductor material layer. The method includes thermally cleaning the inside of a deposition reactor in which a substrate on which the lower Al-containing semiconductor material layer is stacked is loaded. During the thermal cleaning process, the inside of the deposition reactor is thermally treated at a predetermined temperature in an atmosphere of a gas mixture of AsH3 and H2 that is injected into the deposition reactor.
摘要翻译：提供一种制造包括下部含Al半导体材料层，有源层和上部含Al半导体材料层的激光二极管的方法。该方法包括对其中装载有含下层的含Al半导体材料层的基板被加载的沉积反应器的内部进行热清洗。在热清洗过程中，将沉积反应器的内部在预定温度下在注入到AsH 3和H 2的气体混合物的气氛中进行热处理沉积反应器。

18. 发明申请

US20060291515A1 High power vertical external cavity surface emitting laser 有权
标题翻译：大功率垂直外腔表面发射激光
公开(公告)号：US20060291515A1
公开(公告)日：2006-12-28
申请号：US11448839
申请日：2006-06-08
申请人： Ki-sung Kim
发明人： Ki-sung Kim
IPC分类号： H01S5/00 , H01S3/091
CPC分类号： H01S5/141 , H01S5/041 , H01S5/183
摘要： An improved VECSEL device is provided in which the gain of each of the quantum well layers can be increased in a periodic gain structure. A vertical external cavity surface emitting laser (VECSEL) device comprising: a substrate; a bottom DBR mirror formed on the substrate; a multiple quantum well layer formed on the bottom DBR mirror and comprising: a plurality of quantum well layers; first and second strain compensation layers sequentially formed above and below each of the quantum well layers to gradually relieve the strain of the quantum well layers; a capping layer formed on the multiple quantum well layer; an optical pump radiating a pump beam to the surface of the capping layer; and an external cavity mirror separated from and facing the bottom DBR mirror.
摘要翻译：提供了一种改进的VECSEL器件，其中可以在周期性增益结构中增加每个量子阱层的增益。一种垂直外腔表面发射激光器（VECSEL）器件，包括：衬底; 形成在基板上的底部DBR镜; 形成在底部DBR反射镜上的多量子阱层，包括：多个量子阱层; 第一和第二应变补偿层，顺序地形成在每个量子阱层之上和之下，以逐渐减轻量子阱层的应变; 形成在所述多量子阱层上的覆盖层; 将泵浦光束辐射到覆盖层的表面的光泵; 以及与底部DBR镜分离并面向底部DBR镜的外部腔镜。

19. 发明申请

US20060140234A1 Surface emitting laser device having double channeled structure 有权
公开(公告)号：US20060140234A1
公开(公告)日：2006-06-29
申请号：US11193411
申请日：2005-08-01
申请人： Taek Kim , Ki-sung Kim
发明人： Taek Kim , Ki-sung Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S3/109 , H01S5/141 , H01S5/18308 , H01S5/18333 , H01S5/2063 , H01S5/2072 , H01S5/3095
摘要： Embodiments provide a vertical external cavity surface emitting laser (VECSEL) that may provide a uniform current density in an active layer using a double current injecting channel. The surface emitting laser device may include a double channel current injection structure for uniformly applying current to an active layer, wherein the double channel current injection structure may include: a first current injection channel, which may allow current to be injected toward a central portion of an aperture, which may be a light beam output region formed in the active layer, and may have a smaller diameter than the aperture: and a second current injection channel, which may allow current to be injected toward an edge of the aperture and may be located around the aperture.

20. 发明申请

US20050152420A1 Semiconductor device having quantum well structure including dual barrier layers, semiconductor laser employing the semiconductor device, and methods of manufacturing the semiconductor device and the semiconductor laser 审中-公开
标题翻译：具有包括双阻挡层的量子阱结构的半导体器件，采用半导体器件的半导体激光器，以及半导体器件和半导体激光器的制造方法
公开(公告)号：US20050152420A1
公开(公告)日：2005-07-14
申请号：US10989000
申请日：2004-11-16
申请人： Ki-sung Kim
发明人： Ki-sung Kim
IPC分类号： H01S5/34 , H01S5/183 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/3211 , H01S5/32366 , H01S5/3407 , H01S5/34306 , H01S5/34313
摘要： A semiconductor device having a GaInNAs quantum well structure including a plurality of barrier layers, in which the emission wavelength of the device can be controlled by varying the thicknesses and compositions of the barrier layers, a semiconductor laser using the semiconductor device, and methods of manufacturing the same are provided. The semiconductor laser includes a GaAs-based substrate, a quantum well structure formed on the GaAs-based substrate, a cladding layer surrounding the quantum well structure, and a pair of electrodes electrically connected to the cladding layer. The quantum well structure include a quantum well layer, a pair of first barrier layers facing each other with the active region therebetween, and a pair of second barrier layers adjacent to the respective first barrier layers. Optical quality degradation in a long wavelength range, which arises with common quantum well structures, and emission wavelength shifting to a shorter wavelength range, which occurs when a GaInNAs quantum well structure is thermally treated, can be prevented.
摘要翻译：具有包括多个阻挡层的GaInNAs量子阱结构的半导体器件，其中可以通过改变阻挡层的厚度和组成来控制器件的发射波长，使用半导体器件的半导体激光器和制造方法提供相同的。半导体激光器包括GaAs基衬底，形成在GaAs基衬底上的量子阱结构，围绕量子阱结构的包层以及与包层电连接的一对电极。量子阱结构包括量子阱层，一对彼此面对的第一势垒层和其间的有源区，以及与各个第一势垒层相邻的一对第二阻挡层。可以防止在GaInNAs量子阱结构被热处理时发生的在长波长范围内的光学质量劣化，其通过普通量子阱结构产生，并且发射波长移向较短的波长范围。

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