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11. 发明授权

US5324953A Reduced-projection exposure system with chromatic aberration correction system including diffractive lens such as holographic lens 失效
$Reduced-projection exposure system with chromatic aberration correction system including diffractive lens such as holographic lens$
标题翻译：具有色差校正系统的减少投影曝光系统，包括全息透镜等衍射透镜
公开(公告)号：US5324953A
公开(公告)日：1994-06-28
申请号：US12775
申请日：1993-02-03
申请人： Yasuhiro Yoshitake , Yoshitada Oshida , Masataka Shiba , Yasuhiko Nakayama
发明人： Yasuhiro Yoshitake , Yoshitada Oshida , Masataka Shiba , Yasuhiko Nakayama
IPC分类号： G02B5/32 , G02B27/00 , G03F7/23 , G03F9/00 , H01L21/027 , H01L21/30 , G06K7/015
CPC分类号： G03F9/70 , G02B27/0037 , G02B27/4211 , G02B27/4222 , G02B5/32
摘要： A novel exposure system includes a reduced-projection lens optimized for a predetermined single exposure wavelength and a chromatic aberration correction system for TTL (Through The Lens) alignment with broadband light. The correction system includes a holographic lens which dispersion has a negative number in contrast to a conventional glass lens which has a positive dispersion number. By employing a holographic lens, the total optical length of an alignment system can be made short enough to avoid the necessity of installing a mirror therein, thus realizing a highly accurate alignment system.
摘要翻译：一种新颖的曝光系统包括针对预定的单一曝光波长优化的缩小投影透镜和用于与宽带光进行TTL（透镜））对准的色差校正系统。校正系统包括与具有正色散数的常规玻璃透镜相反的色散具有负数的全息透镜。通过采用全息透镜，可以使对准系统的总光学长度足够短以避免在其中安装反射镜，从而实现高精度的对准系统。

12. 发明授权

US4676637A Exposure apparatus with foreign particle detector 失效
标题翻译：具有异物检测器的曝光装置
公开(公告)号：US4676637A
公开(公告)日：1987-06-30
申请号：US790475
申请日：1985-10-23
申请人： Sachio Uto , Masataka Shiba , Yoshitada Oshida
发明人： Sachio Uto , Masataka Shiba , Yoshitada Oshida
IPC分类号： H01L21/027 , B65G1/00 , G01N21/21 , G01N21/88 , G01N21/94 , G01N21/956 , G03F1/84 , G03F7/20 , H01L21/30 , H01L21/66 , G01N21/00
CPC分类号： G03F7/70741 , G01N21/94 , G03F7/70866 , G01N2021/9563 , G01N21/21
摘要： A plurality of substrate assemblies each including a substrate such as a reticle or photomask used for exposure and frames, mounted to the opposite surfaces of the substrate, to which foreign particle deposition preventive films are applied are stored in a magazine. By using a transport unit, a substrate assembly is taken out of the magazine, transported from the magazine to a mask table disposed at an exposure position and set at the mask table. A foreign particle detector is provided near the transport unit to optically detect foreign particles present on the foreign particle deposition preventive film of the substrate assembly. The substrate assembly set at the mask table is aligned to a wafer. A light beam is irradiated on the substrate assembly aligned relative to the wafer and a circuit pattern formed on the substrate is projected upon the wafer through a projection optical system to expose the wafer to the light beam through the circuit pattern.
摘要翻译：多个基板组件，其各自包括安装到基板的相反表面上的诸如用于曝光的掩模版或光掩模的基板和施加有外来颗粒沉积预防膜的相对表面的基板组件。通过使用传送单元，将基板组件从盒中取出，从盒传送到设置在曝光位置并设置在掩模台上的掩模台。在输送单元附近设有异物检测器，以光学检测存在于基板组件的异物颗粒沉积防止膜上的异物。设置在掩模台上的基板组件与晶片对准。将光束照射在相对于晶片对准的基板组件上，并且通过投影光学系统将形成在基板上的电路图案投影到晶片上，以通过电路图案将晶片暴露于光束。

13. 发明授权

US07598020B2 Exposure apparatus and method 失效
标题翻译：曝光装置和方法
公开(公告)号：US07598020B2
公开(公告)日：2009-10-06
申请号：US11117492
申请日：2005-04-29
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
IPC分类号： H01L21/00
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device through an object lens, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing, the light pattern projected on the substrate is formed by excimer laser light which is emitted from an annular shaped light source and which is passed through a mask having a phase shifter.
摘要翻译：一种半导体器件的制造方法，包括以下步骤：通过物镜将半导体器件的基板上的光图案投射到半导体器件的基板上，使其抗蚀剂曝光，使由光图形曝光的抗蚀剂显影形成具有抗蚀剂的晶片图案，并且蚀刻其上形成有抗蚀剂的晶片图案的基板。在曝光的步骤中，投射在基板上的光图案由从环形光源发射并通过具有移相器的掩模的准分子激光形成。

14. 发明授权

US07277155B2 Exposure apparatus and method 失效
标题翻译：曝光装置和方法
公开(公告)号：US07277155B2
公开(公告)日：2007-10-02
申请号：US11117447
申请日：2005-04-29
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
IPC分类号： G03B27/42 , G03B27/32 , G03C5/00
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a first light pattern on the substrate of the semiconductor device the first light pattern being formed by passing light through a first mask, and exposing the resist by projecting a second light pattern on the substrate, the second light pattern being formed by passing light through a second mask. In the step of exposing the resist by projecting the second light pattern, the second light pattern is formed by excimer laser light having an annular shape and passed through the second mask.
摘要翻译：一种半导体器件的制造方法，包括以下步骤：通过将半导体器件的衬底上的第一光图案投射到通过第一掩模通过光而形成的第一光图案，使涂覆在半导体器件的衬底上的抗蚀剂曝光，并通过在基板上投射第二光图案来曝光抗蚀剂，第二光图案是通过使光通过第二掩模而形成的。在通过投影第二光图案使抗蚀剂曝光的步骤中，第二光图案由具有环形的准分子激光形成并通过第二掩模。

15. 发明申请

US20050196713A1 Exposure apparatus and method 失效
标题翻译：曝光装置和方法
公开(公告)号：US20050196713A1
公开(公告)日：2005-09-08
申请号：US11117447
申请日：2005-04-29
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
IPC分类号： G03F1/84 , G03F7/20 , H01L21/027 , H01L21/30 , G03F7/00
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a first light pattern on the substrate of the semiconductor device the first light pattern being formed by passing light through a first mask, and exposing the resist by projecting a second light pattern on the substrate, the second light pattern being formed by passing light through a second mask. In the step of exposing the resist by projecting the second light pattern, the second light pattern is formed by excimer laser light having an annular shape and passed through the second mask.
摘要翻译：一种半导体器件的制造方法，包括以下步骤：通过将半导体器件的衬底上的第一光图案投射到通过第一掩模通过光而形成的第一光图案，使涂覆在半导体器件的衬底上的抗蚀剂曝光，并通过在基板上投射第二光图案来曝光抗蚀剂，第二光图案是通过使光通过第二掩模而形成的。在通过投影第二光图案使抗蚀剂曝光的步骤中，第二光图案由具有环形的准分子激光形成并通过第二掩模。

16. 发明授权

US06757621B2 Process management system 失效
标题翻译：流程管理系统
公开(公告)号：US06757621B2
公开(公告)日：2004-06-29
申请号：US10342871
申请日：2003-01-16
申请人： Fumio Mizuno , Seiji Isogai , Kenji Watanabe , Yasuhiro Yoshitake , Terushige Asakawa , Yuichi Ohyama , Hidekuni Sugimoto , Seiji Ishikawa , Masataka Shiba , Jun Nakazato , Makoto Ariga , Tetsuji Yokouchi , Toshimitsu Hamada , Ikuo Suzuki , Masami Ikota , Mari Nozoe , Isao Miyazaki , Yoshiharu Shigyo
发明人： Fumio Mizuno , Seiji Isogai , Kenji Watanabe , Yasuhiro Yoshitake , Terushige Asakawa , Yuichi Ohyama , Hidekuni Sugimoto , Seiji Ishikawa , Masataka Shiba , Jun Nakazato , Makoto Ariga , Tetsuji Yokouchi , Toshimitsu Hamada , Ikuo Suzuki , Masami Ikota , Mari Nozoe , Isao Miyazaki , Yoshiharu Shigyo
IPC分类号： H01L2166
CPC分类号： H01L22/20 , G01N21/9501 , G01R31/2894 , G01R33/06 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： A process management system in accordance with the present invention includes inspection apparatuses for inspecting defects on a wafer, the inspection apparatuses being connected through a communication network, inspection information and image information obtained from these inspection apparatuses being collected to construct a data base and an image file, therein definition of defects is given by combinations of elements which characterize the defect based on the inspection information and the image information obtained from the inspection apparatuses. By giving definition of the defect, characteristics of the defect can be subdivided and known. Therefore, the cause of a defect can be studied.
摘要翻译：根据本发明的处理管理系统包括用于检查晶片上的缺陷的检查装置，通过通信网络连接的检查装置，从这些检查装置获得的检查信息和图像信息被收集以构建数据库和图像文件，其中缺陷的定义通过基于检查信息和从检查装置获得的图像信息来表征缺陷的元件的组合来给出。通过给出缺陷的定义，可以细分和知道缺陷的特征。因此，可以研究缺陷的原因。

17. 发明授权

US5526094A Exposure apparatus and method 失效
标题翻译：曝光装置和方法
公开(公告)号：US5526094A
公开(公告)日：1996-06-11
申请号：US235654
申请日：1994-04-29
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
IPC分类号： G03F1/84 , G03F7/20 , H01L21/027 , H01L21/30 , G03B27/42 , G03B27/32 , G03B27/72
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging, transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.
摘要翻译：一种曝光装置和方法，其中用光和光照射掩模，将透射通过和从照射的掩模反射的透镜装置成像到基板上。至少在成像期间，部分地抑制从被照射的掩模发射和反射的光的透射。更具体地，利用空间滤波器来抑制O级衍射光的至少一部分。

18. 发明授权

US4819033A Illumination apparatus for exposure 失效
标题翻译：曝光照明装置
公开(公告)号：US4819033A
公开(公告)日：1989-04-04
申请号：US113514
申请日：1987-10-28
申请人： Yasuhiro Yoshitake , Yoshitada Oshida , Masataka Shiba , Naoto Nakashima
发明人： Yasuhiro Yoshitake , Yoshitada Oshida , Masataka Shiba , Naoto Nakashima
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027 , H01S3/101 , H01S3/106 , G03B27/42 , G03B27/72
CPC分类号： G03F7/70558 , G03F7/2006 , G03F7/70041 , G03F7/70058
摘要： An illumination apparatus is disclosed which is suitable for use in a projection/exposure system for projecting an image of a circuit pattern of a reticle on a semiconductor wafer through a projection lens. The illumination apparatus includes an excimer laser for emitting a pulsed laser beam, an optical system for illuminating the reticle with a plurality of laser pulses emitted from the excimer laser so that laser pulses having passed through the reticle impinge on the semiconductor wafer in different directions through the projection lens, and a light intensity control device for controlling the light intensity of each of the laser pulses so that the laser pulses equally contribute to the reaction of a light sensitive material which is provided on the semiconductor wafer, with light.
摘要翻译：公开了一种适用于投影/曝光系统的照明装置，用于通过投影透镜在半导体晶片上投射标线片的电路图案的图像。照明装置包括用于发射脉冲激光束的准分子激光器，用于从准分子激光器发射的多个激光脉冲照射标线片的光学系统，使得已经穿过掩模版的激光脉冲以不同方向穿过半导体晶片投影透镜和用于控制每个激光脉冲的光强度的光强度控制装置，使得激光脉冲同样有助于设置在半导体晶片上的光敏材料与光的反应。

19. 发明授权

US4725737A Alignment method and apparatus for reduction projection type aligner 失效
标题翻译：还原投影型对准器的对准方法和装置
公开(公告)号：US4725737A
公开(公告)日：1988-02-16
申请号：US797131
申请日：1985-11-12
申请人： Toshihiko Nakata , Masataka Shiba , Yoshitada Oshida , Sachio Uto , Atsuhiro Yoshizaki
发明人： Toshihiko Nakata , Masataka Shiba , Yoshitada Oshida , Sachio Uto , Atsuhiro Yoshizaki
IPC分类号： G03F9/00 , G01V9/04 , G01B11/00
CPC分类号： G03F9/7076
摘要： An alignment method and apparatus for reduction projection type aligner in which the rough detection of reticle position in the reticle alignment process at the time of mounting a reticle and the fine detection of reticle position in the wafer alignment for the alignment between a wafer and the reticle are performed automatically by the same reticle alignment pattern and the same optical alignment detection system. A plurality of one- or two-dimensional Fresnel zone plates having different shapes of diffraction patterns formed outside of a reticle circuit pattern and arranged at a position outward of the entrance pupil of the reduction projection lens are used as a reticle alignment pattern to detect the absolute position of the reticle. The detection field of view of the optical alignment detection system is thus effectively widened to make pattern detection possible with high magnification for an improved detection accuracy. The same reticle alignment pattern and the same optical alignment detection system are used for rough detection of reticle position in reticle alignment and fine detection of reticle position in wafer alignment. In the optical alignment detection system, on the other hand, the image position of the diffraction pattern from the reticle alignment pattern and the image position of the wafer alignment pattern are located at the same distance from the reticle surface.
摘要翻译：用于还原投影型对准器的对准方法和装置，其中在安装光罩时在光罩对准过程中对光罩位置进行粗略检测，并且在晶片对准中精确检测标线片位置以用于晶片和掩模版之间的对准通过相同的掩模版对准图案和相同的光学对准检测系统自动执行。使用在分划板电路图案之外形成并且布置在还原投影透镜的入射光瞳外侧的位置处具有不同形状的衍射图案的多个一维或二维菲涅尔区域板作为掩模版对准图案，以检测掩模版的绝对位置。因此光学对准检测系统的检测视场被有效地加宽，以便以高放大率进行图案检测以提高检测精度。相同的掩模版对准图案和相同的光学对准检测系统用于粗略检测掩模版对准中的掩模版位置和精确检测晶片对准中的掩模版位置。另一方面，在光学对准检测系统中，衍射图案的标线片取向图案的图像位置和晶片对准图案的图像位置位于与标线片表面相同的距离处。

20. 发明授权

US06335146B1 Exposure apparatus and method 失效
标题翻译：曝光装置和方法
公开(公告)号：US06335146B1
公开(公告)日：2002-01-01
申请号：US09542071
申请日：2000-04-03
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
IPC分类号： G03F700
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, forming the excimer laser in a particular shape, illuminating a pattern on a mask for a phase shifter method with the particular shaped excimer laser, and exposing a resist on a wafer with the excimer laser which passed through the mask. The resist on the wafer is developed and the wafer is etched to form a pattern.
摘要翻译：半导体器件的制造方法包括以下步骤：从光源发射准分子激光，形成特定形状的准分子激光器，照射具有特定形状的准分子激光器的移相器方法的掩模上的图案，以及曝光具有通过掩模的准分子激光器的晶片上的抗蚀剂。显影晶片上的抗蚀剂，蚀刻晶片以形成图案。

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