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11. 发明申请

US20070020785A1 Systems and methods for alignment of laser beam(s) for semiconductor link processing 有权
标题翻译：用于半导体连接处理的激光束对准的系统和方法
公开(公告)号：US20070020785A1
公开(公告)日：2007-01-25
申请号：US11481562
申请日：2006-07-05
申请人： Kelly Bruland , Stephen Swaringen
发明人： Kelly Bruland , Stephen Swaringen
IPC分类号： H01L21/66
CPC分类号： H01L23/5258 , B23K26/043 , G11C17/14 , G11C17/143 , H01L2924/0002 , H01L2924/00
摘要： A method makes a discrete adjustment to static alignment of a laser beam in a machine for selectively irradiating conductive links on or within a semiconductor substrate using the laser beam. The laser beam propagates along a beam path having an axis extending from a laser to a laser beam spot at a location on or within the semiconductor substrate. The method generates, based on at least one measured characteristic of the laser beam, at least one signal to control an adjustable optical element of the machine effecting the laser beam path. The method also sends said at least one signal to the adjustable optical element. The method then adjusts the adjustable optical element in response to said at least one signal so as to improve static alignment of the laser beam path axis.
摘要翻译：一种方法对机器中的激光束的静态对准进行离散调整，用于使用激光束选择性地照射半导体衬底上或内部的导电连接。激光束沿着具有从激光器延伸到半导体衬底上或内部的位置的激光束点的光束路径传播。该方法基于激光束的至少一个测量特性产生至少一个信号，以控制影响激光束路径的机器的可调节光学元件。该方法还将所述至少一个信号发送到可调光学元件。该方法然后响应于所述至少一个信号调整可调光学元件，以改善激光束路径轴线的静态对准。

12. 发明申请

US20050281101A1 Semiconductor structure processing using multiple laterally spaced laser beam spots with on-axis offset 有权
标题翻译：使用具有轴上偏移的多个横向间隔开的激光束点的半导体结构处理
公开(公告)号：US20050281101A1
公开(公告)日：2005-12-22
申请号：US11051265
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen
发明人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen
IPC分类号： G11C17/14 , G11C29/00 , H01L23/525
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/082 , G11C17/14 , G11C17/143 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate electrically conductive structures on or within a semiconductor substrate using multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates a first laser beam along a first propagation path having a first axis incident at a first location on or within the semiconductor substrate at a given time. The first location is either on a structure in a first row of structures or between two adjacent structures in the first row. The method also propagates a second laser beam along a second propagation path having a second axis incident at a second location on or within the semiconductor substrate at the given time. The second location is either on a structure in a second row of structures or between two adjacent structures in the second row. The second row is distinct from the first row, and the second location is offset from the first location by some amount in the lengthwise direction of the rows. The method moves the first and second laser beam axes substantially in unison in the lengthwise direction of the rows relative to the semiconductor substrate, so as to selectively irradiate structures in the first and second rows with the first and second laser beams respectively.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或内部的导电结构。这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。一种方法在给定时间沿着第一传播路径传播第一激光束，该第一传播路径具有入射在半导体衬底上或半导体衬底上的第一位置的第一轴。第一个位置是在第一行结构中的结构上，或者在第一行的两个相邻结构之间。该方法还在给定时间沿第二传播路径传播第二激光束，该第二传播路径具有入射在半导体衬底上或第二位置的第二轴。第二位置在第二行结构中的结构上，或者位于第二行中的两个相邻结构之间。第二行与第一行不同，第二位置在行的长度方向上偏离第一位置一定量。该方法使第一和第二激光束轴相对于半导体衬底在行的长度方向基本一致地移动，以便分别用第一和第二激光束选择性地照射第一和第二行中的结构。

13. 发明申请

US20050279739A1 Semiconductor structure processing using multiple laser beam spots spaced on-axis to increase single-blow throughput 有权
标题翻译：使用在轴上间隔开的多个激光束点的半导体结构处理来增加单次打击吞吐量
公开(公告)号：US20050279739A1
公开(公告)日：2005-12-22
申请号：US11052000
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen , Frank Evans
发明人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen , Frank Evans
IPC分类号： B23K26/00 , B23K26/06 , B23K26/067 , B23K26/08 , B23K26/10 , B23K26/38 , B23K26/40 , H01L21/768 , H01L23/525
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0624 , B23K26/067 , B23K26/10 , B23K2101/40 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row so as to complete irradiation of said structures with a single laser pulse per structure. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with either the first or the second laser beam. The moving step results in a speed that is greater than would occur if only a single laser beam were utilized to irradiate the structures in the row.
摘要翻译：方法和系统使用多个脉冲激光束选择性地照射半导体衬底上或内部的结构。这些结构被布置成在大体上沿长度方向延伸的一排。该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一脉冲激光束和沿着与半导体衬底相交的第二激光束轴传播的第二脉冲激光束。该方法将来自第一和第二脉冲激光束的相应的第一和第二脉冲引导到行中不同的第一和第二结构，以便用每个结构的单个激光脉冲完成所述结构的照射。该方法相对于半导体衬底基本上在与行的长度方向平行的方向基本上一致地移动第一和第二激光束轴线，以便用第一或第二激光束选择性地照射该行中的结构。移动步骤导致的速度大于如果仅使用单个激光束来照射行中的结构的速度。

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