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    • 11. 发明授权
    • Wavelength demultiplexing stack photodiode detector with electrical isolation layers
    • 具有电隔离层的波长解复用堆叠光电二极管检测器
    • US06271943B1
    • 2001-08-07
    • US09049252
    • 1998-03-27
    • Keith Wayne Goossen
    • Keith Wayne Goossen
    • H04B1000
    • B82Y20/00H01L31/035236H01L31/101
    • A wavelength demultiplexer having at least two pairs of photodetectors is disclosed. The photodetectors are arranged in sequential layers along an optical path and the pairs of photodetectors are separated by a non-optically active insulator interposed between the pairs. The photodetectors differ in bandgap, and are arranged so that the optical signal passes through relatively larger bandgap photodetectors before being received by relatively smaller bandgap detectors. Each photodetector absorbs photons within a predetermined energy range and generates a voltage as a function of the absorbed energy. The photodetectors can be used to detect, and hence demultiplex, a wavelength-division-multiplexed signal.
    • 公开了具有至少两对光电检测器的波长解复用器。 光电检测器沿着光路布置成顺序层,并且成对的光电检测器被插入在对之间的非光学活性绝缘体分开。 光电检测器在带隙方面不同,并且被布置成使得光信号在被相对较小的带隙检测器接收之前通过相对较大的带隙光电检测器。 每个光电探测器在预定的能量范围内吸收光子并产生作为吸收能量的函数的电压。 光电探测器可用于检测波分复用信号,从而解复用波分复用信号。
    • 14. 发明授权
    • Micromechanical optical modulator with linear operating characteristic
    • 具有线性工作特性的微机械光学调制器
    • US5838484A
    • 1998-11-17
    • US699374
    • 1996-08-19
    • Keith Wayne Goossen
    • Keith Wayne Goossen
    • G02B26/00G02B26/08G02F1/09
    • G02B26/001G02B26/0825
    • A micromechanical optical modulator having a linear response in reflectivity, as a function of applied bias, and a method of operating and making same, are disclosed. The modulator consists of a movable layer suspended over a substrate. A gap is defined between the movable layer and the substrate. As the movable layer moves, the gap changes size, resulting in a change in modulator reflectivity. In operation, the movable layer moves within a linear operating regime under the action of an applied voltage, which is the sum of a constant bias and a signal from an analog source. A substantially linear operating characteristic, i.e., reflectivity versus applied voltage is obtained within the linear operating regime by properly selecting the size of the gap in the absence of the applied voltage and the range in the applied voltage.
    • 公开了具有作为施加偏压的函数的反射率线性响应的微机械光学调制器及其操作和制造方法。 调制器由悬挂在基板上的可移动层组成。 在可移动层和衬底之间限定间隙。 随着可移动层移动,间隙改变尺寸,导致调制器反射率的变化。 在操作中,可移动层在施加电压的作用下在线性操作状态下移动,施加的电压是来自模拟源的恒定偏压和信号之和。 通过在没有施加的电压和施加的电压的范围的情况下适当地选择间隙的尺寸,在线性操作状态下获得基本上线性的工作特性,即反射率对施加的电压。
    • 15. 发明授权
    • Micromechanical optical modulator having a reduced-mass composite
membrane
    • 具有缩小质量复合膜的微机械光学调制器
    • US5710656A
    • 1998-01-20
    • US688325
    • 1996-07-30
    • Keith Wayne Goossen
    • Keith Wayne Goossen
    • G02B26/08G02B26/00
    • G02B26/0833G02B26/0825
    • A method and apparatus for a micromechanical modulator having a reduced-mass multilayer membrane is disclosed. The modulator includes a movable composite membrane suspended over a subtrate. The composite membrane consists of an overlayer and an underlayer. The overlayer is characterized by a thickness that is less than one-quarter of a wavelength of the optical signal being modulated. Under the action of a bias voltage, the movable membrane moves from a quiescent position to a second position closer to the substrate. The modulator is fabricated so that in either the quiescent position or the second position the gap between the composite membrane and the substrate is equal to d=m.lambda./4-n.sub.s s when n.sub.u is about equal to (n.sub.s) .sup.0.5, where m is an even integer, .lambda. is the wavelength of the optical signal being modulated, n.sub.s is the refractive index of the subtrate, n.sub.u is the refractive index of the underlayer, n.sub.o is the refractive index of the overlayer, and s is the thickness of the overlayer. More generally, the gap may be given by d=m.lambda./4-n.sub.s s+(n.sub.u -n.sub.s.sup.0.5) (.lambda./10) sin (4.pi.n.sub.o s/.lambda.).
    • 公开了一种具有低质量多层膜的微机械调制器的方法和装置。 该调制器包括悬浮在副滴定板上的可移动复合膜。 复合膜由覆盖层和底层组成。 覆盖层的特征在于小于被调制的光信号的波长的四分之一的厚度。 在偏置电压的作用下,可动膜从静止位置移动到靠近基板的第二位置。 制造调制器使得在静止位置或第二位置时,当nu大约等于(ns)0.5时,复合膜和衬底之间的间隙等于d =mλ/ 4-nss,其中m是 即使是整数,λ是被调制的光信号的波长,n是减法器的折射率,nu是底层的折射率,不是覆盖层的折射率,s是覆盖层的厚度。 更通常地,间隙可以由d =mλ/ 4-nss+(nu- 0.5)(λ/ 10)sin(4πnos/λ)给出。
    • 18. 发明授权
    • Integrated semiconductor devices
    • 集成半导体器件
    • US06172417B2
    • 2001-01-09
    • US08535677
    • 1995-09-27
    • Keith Wayne Goossen
    • Keith Wayne Goossen
    • H01L2334
    • H01L31/125H01L25/167H01L2221/68359H01L2221/68363H01L2924/0002Y10S438/933Y10S438/977H01L2924/00
    • An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of a photoresist between the devices, allowing the etch-resist to dry, and removing the substrate from one of the semiconductor devices. Preferably the etch-resist is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, flowing a photoresist between the modulators and the chip, allowing the photoresist to dry, and removing the substrate from the modulator.
    • 通过将具有衬底的一个制造的半导体器件的导体与具有衬底的另一制造的半导体器件上的导体结合来形成集成半导体器件,在器件之间流动以光致抗蚀剂形式的蚀刻抗蚀剂,允许蚀刻抗蚀剂 干燥,并从一个半导体器件中去除衬底。 优选地,保留抗蚀剂以赋予该装置机械强度。 更具体地说,通过将一个或多个GaAs / AlGaAs多量子阱调制器的导体与IC芯片上的导体结合,形成混合半导体器件,在调制器和芯片之间流动光致抗蚀剂,使光致抗蚀剂干燥,并除去 来自调制器的底物。