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11. 发明授权

US4944925A Apparatus for producing single crystals 失效
标题翻译：单晶制造装置
公开(公告)号：US4944925A
公开(公告)日：1990-07-31
申请号：US357663
申请日：1989-05-25
申请人： Kazuhisa Yamauchi , Kazuo Sawada , Yoshihiro Nakai
发明人： Kazuhisa Yamauchi , Kazuo Sawada , Yoshihiro Nakai
IPC分类号： C30B15/00 , C30B15/24
CPC分类号： C30B15/24 , C30B15/00 , C30B29/30 , C30B29/42 , Y10T117/1036 , Y10T117/1044 , Y10T117/1068
摘要： A method of producing single crystals is characterized in that in withdrawing a semiconductor or dielectric material from its molten state while allowing it to grow into a single crystal solid, a die heated to a temperature higher than the solidifying point of the melt is disposed at the melt withdrawing outlet and the single crystal is withdrawn through the die.
摘要翻译：制造单晶的方法的特征在于，在使半导体或介电材料从其熔融状态中取出并使其生长成单晶固体的同时，将加热至高于熔融物凝固点的温度的模具设置在熔融抽出口，单晶通过模具取出。

12. 发明授权

US4906609A Fabrication of superconducting oxide wires by powder-in-tube method 失效
标题翻译：通过粉末管制法制造超导氧化物线
公开(公告)号：US4906609A
公开(公告)日：1990-03-06
申请号：US175794
申请日：1988-03-31
申请人： Kazuhisa Yamauchi , Kazuya Ohmatsu , Tetsuya Ishida , Tomoji Gotoh , Syuji Yazu , Tetsuji Jodai
发明人： Kazuhisa Yamauchi , Kazuya Ohmatsu , Tetsuya Ishida , Tomoji Gotoh , Syuji Yazu , Tetsuji Jodai
IPC分类号： H01L39/12 , B21C37/04 , B21C37/08 , C01B13/14 , C01G1/00 , C04B35/00 , C04B35/45 , H01B12/04 , H01B13/00 , H01L39/24
CPC分类号： H01L39/248 , Y10S505/704 , Y10S505/74 , Y10T29/49014 , Y10T29/5185 , Y10T29/5187
摘要： A powder-in-tube method of producing an oxide superconduction wire is disclosed in which a preformed copper oxide superconducting powder is continuously filled into a tube precursor having a U shape cross-section formed from a long strip of metal material. The tube precursor is formed into a tube by bending and welding. The resulting tube is drawn to a reduced cross-section and further heated to sinter the packed powder to form the finished oxide superconducting wire.

13. 发明授权

US4176070A Semi-permeable membranes of regenerated cuprammonium cellulose and method for heat sterilization thereof in physiological saline 失效
标题翻译：再生铜铵纤维素的半透膜及其在生理盐水中热灭菌的方法
公开(公告)号：US4176070A
公开(公告)日：1979-11-27
申请号：US886949
申请日：1978-03-15
申请人： Yutaka Sakurada , Kimihisa Sunahara , Kazuhisa Yamauchi
发明人： Yutaka Sakurada , Kimihisa Sunahara , Kazuhisa Yamauchi
IPC分类号： A61L2/07 , B01D65/02 , A61L1/00 , B01D13/04 , B01D39/18
CPC分类号： A61L2/07 , B01D65/022 , B01D2321/08
摘要： Semi-permeable membranes of regenerated cellulose are subjected to wet-heat sterilization at a temperature of 105.degree. to 140.degree. C. During the treatment, the membranes are maintained in contact with an aqueous medium such as water or physiological saline. For the dialysis of body fluids, hollow fiber, semi-permeable membranes so sterilized exhibit a sonic modulus of at least 6.5.times.10.sup.10 dynes/cm.sup.2. Hollow fibers made of cuprammonium regenerated cellulose are particularly preferred for the above purpose.
摘要翻译：再生纤维素的半透膜在105〜140℃的温度下进行湿热灭菌。在处理过程中，将膜与含水介质如水或生理盐水保持接触。对于体液的透析，中空纤维，如此灭菌的半透膜显示出至少6.5×10 10达因/ cm 2的声速模量。对于上述目的，特别优选由铜铵再生纤维素制成的中空纤维。

14. 发明申请

US20130175544A1 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20130175544A1
公开(公告)日：2013-07-11
申请号：US13824357
申请日：2010-11-10
申请人： Toshiyuki Oishi , Hiroshi Otsuka , Koji Yamanaka , Kazuhisa Yamauchi , Masatake Hangai , Masatoshi Nakayama
发明人： Toshiyuki Oishi , Hiroshi Otsuka , Koji Yamanaka , Kazuhisa Yamauchi , Masatake Hangai , Masatoshi Nakayama
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/0254 , H01L29/0607 , H01L29/0657 , H01L29/205 , H01L29/7786
摘要： It is an object to attain both high gain and a broad band (that is, to attain both reduction in a gate-drain capacitance and reduction in a source-drain capacitance). Provided is a semiconductor device, including: a GaN channel layer (3) through which electrons travel; a barrier layer (4) which is provided on the GaN channel layer in order to form two-dimensional electron gas in the GaN channel layer and which contains at least any one of In, Al, and Ga and contains N; a gate electrode (8), a source electrode (6), and a drain electrode (7); and a plate (20) formed of a material having polarization, which is provided between the gate electrode (8) and the drain electrode (7), the plate being held in contact with a part of the barrier layer (4).
摘要翻译：本发明的目的是获得高增益和宽带（即，获得栅极 - 漏极电容的减小和源极 - 漏极电容的减小）。提供了一种半导体器件，包括：电子行进通过的GaN沟道层（3）; 阻挡层（4），其设置在所述GaN沟道层上，以在所述GaN沟道层中形成二维电子气，并且其包含In，Al和Ga中的至少任一个并且包含N; 栅电极（8），源电极（6）和漏电极（7）; 以及设置在所述栅极（8）和所述漏电极（7）之间的具有偏振材料的板（20），所述板与所述阻挡层（4）的一部分保持接触。

15. 发明授权

US08149060B2 Low distortion amplifier and Doherty amplifier using low distortion amplifier 有权
标题翻译：低失真放大器和Doherty放大器采用低失真放大器
公开(公告)号：US08149060B2
公开(公告)日：2012-04-03
申请号：US12933509
申请日：2008-03-25
申请人： Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
发明人： Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
IPC分类号： H03F3/68
CPC分类号： H03F3/195 , H03F1/0288 , H03F1/3205 , H03F1/565 , H03F3/601 , H03F2200/387 , H03F2200/451
摘要： Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.
摘要翻译：提供了能够满足晶体管附近的设定空间的固定和低阻抗的低失真放大器。低失真放大器包括其短端与高频短路元件和低频短路元件短路的短路短路短路短路元件，短路短路元件连接到至少一个晶体管的栅极端子和漏极端子，并且包括多条分支线路，所述多条分支线路的前端与高频短路元件和低频短路元件短路元件。

16. 发明申请

US20110140776A1 VARIABLE FREQUENCY AMPLIFIER 有权
标题翻译：可变频率放大器
公开(公告)号：US20110140776A1
公开(公告)日：2011-06-16
申请号：US13058008
申请日：2009-11-04
申请人： Kazuhisa Yamauchi , Hidenori Yukawa , Akira Inoue , Atsushi Yamamoto , Koichi Fujisaki , Hiroomi Ueda
发明人： Kazuhisa Yamauchi , Hidenori Yukawa , Akira Inoue , Atsushi Yamamoto , Koichi Fujisaki , Hiroomi Ueda
IPC分类号： H03F1/00 , H03G3/00
CPC分类号： H03F1/42 , H03F1/32 , H03F3/191 , H03F3/211 , H03F3/24 , H03F2200/192 , H03F2200/195 , H03F2200/198 , H03F2200/201 , H03F2200/204 , H03F2200/207
摘要： A variable frequency amplifier includes a main amplifier system 4 for amplifying one of signals into which an input signal is split by a directional coupler 3 to output the amplified signal, and an injection amplifier system 9 for adjusting at least one of the amplitude and phase of the other one of the signals into which the input signal is split by the directional coupler 3 according to a setting provided thereto from outside the variable frequency amplifier, and for amplifying the other signal and injecting this amplified signal into an output side of the main amplifier system 4.
摘要翻译：可变频放大器包括：主放大器系统4，用于放大由定向耦合器3输入信号被分离的信号之一以输出放大信号;以及注入放大器系统9，用于调节幅度和相位中的至少一个根据从可变频放大器的外部提供的设置，由定向耦合器3将输入信号分离的信号中的另一个，并且用于放大另一信号并将该放大信号注入到主放大器的输出侧系统4。

17. 发明授权

US07649412B2 High efficiency amplifier 失效
标题翻译：高效放大器
公开(公告)号：US07649412B2
公开(公告)日：2010-01-19
申请号：US11921504
申请日：2006-07-31
申请人： Kenichi Horiguchi , Satoru Ishizaka , Kazuhisa Yamauchi , Masatoshi Nakayama
发明人： Kenichi Horiguchi , Satoru Ishizaka , Kazuhisa Yamauchi , Masatoshi Nakayama
IPC分类号： H03F3/68
CPC分类号： H03F1/0288
摘要： When an input signal level is small, the electrical length of a phase line 21 and the electrical length of a phase line 23 are set in such a manner that the impedance seen by looking into the output side from an impedance reference point 11 at the output side of a carrier amplifier 3 becomes 2R+α (where R is a load resistance and α is positive), and the electrical length of a phase line 22 is set at a difference between the electrical length of the phase line 21 and the electrical length of the phase line 23.
摘要翻译：当输入信号电平小时，相线21的电长度和相线23的电长度被设定为使得通过在输出处从阻抗参考点11观察输出侧看到的阻抗载波放大器3的一侧变为2R +α（其中R是负载电阻，α为正），相线22的电长度被设定为相线21的电长度与电长度的相线23。

18. 发明授权

US08416018B2 Variable frequency amplifier 有权
标题翻译：变频放大器
公开(公告)号：US08416018B2
公开(公告)日：2013-04-09
申请号：US13058008
申请日：2009-11-04
申请人： Kazuhisa Yamauchi , Hidenori Yukawa , Akira Inoue , Atsushi Yamamoto , Koichi Fujisaki , Hiroomi Ueda
发明人： Kazuhisa Yamauchi , Hidenori Yukawa , Akira Inoue , Atsushi Yamamoto , Koichi Fujisaki , Hiroomi Ueda
IPC分类号： H03F3/68
CPC分类号： H03F1/42 , H03F1/32 , H03F3/191 , H03F3/211 , H03F3/24 , H03F2200/192 , H03F2200/195 , H03F2200/198 , H03F2200/201 , H03F2200/204 , H03F2200/207
摘要： A variable frequency amplifier includes a main amplifier system 4 for amplifying one of signals into which an input signal is split by a directional coupler 3 to output the amplified signal, and an injection amplifier system 9 for adjusting at least one of the amplitude and phase of the other one of the signals into which the input signal is split by the directional coupler 3 according to a setting provided thereto from outside the variable frequency amplifier, and for amplifying the other signal and injecting this amplified signal into an output side of the main amplifier system 4.
摘要翻译：可变频放大器包括：主放大器系统4，用于放大由定向耦合器3输入信号被分离的信号之一以输出放大信号;以及注入放大器系统9，用于调节幅度和相位中的至少一个根据从可变频放大器的外部提供的设置，由定向耦合器3将输入信号分离的信号中的另一个，并且用于放大另一信号并将该放大信号注入到主放大器的输出侧系统4

19. 发明申请

US20110012681A1 LOW DISTORTION AMPLIFIER AND DOHERTY AMPLIFIER USING LOW DISTORTION AMPLIFIER 有权
标题翻译：低失真放大器和使用低失真放大器的DOHERTY放大器
公开(公告)号：US20110012681A1
公开(公告)日：2011-01-20
申请号：US12933509
申请日：2008-03-25
申请人： Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
发明人： Kazuhisa Yamauchi , Hifumi Noto , Akira Inoue , Tomokazu Hamada , Masatoshi Nakayama , Kenichi Horiguchi
IPC分类号： H03F3/68
CPC分类号： H03F3/195 , H03F1/0288 , H03F1/3205 , H03F1/565 , H03F3/601 , H03F2200/387 , H03F2200/451
摘要： Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.
摘要翻译：提供了能够满足晶体管附近的设定空间的固定和低阻抗的低失真放大器。低失真放大器包括其短端与高频短路元件和低频短路元件短路的短路短路短路短路元件，短路短路元件连接到至少一个晶体管的栅极端子和漏极端子，并且包括多条分支线，多条分支线路的前端与高频短路元件短路，低频短路元件。

20. 发明申请

US20100079210A1 POWER AMPLIFICATION DEVICE 有权
标题翻译：功率放大器件
公开(公告)号：US20100079210A1
公开(公告)日：2010-04-01
申请号：US12518664
申请日：2007-12-05
申请人： Kazuhisa Yamauchi , Yuji Sakai , Koichi Fujisaki , Akira Inoue
发明人： Kazuhisa Yamauchi , Yuji Sakai , Koichi Fujisaki , Akira Inoue
IPC分类号： H03F1/07
CPC分类号： H03F1/0238 , H03F1/0244 , H03F1/0288
摘要： Provided is a power amplification device including: a DC power supply that outputs a drain voltage; a Doherty amplifier including a carrier amplifier and a peak amplifier, which are connected in parallel, and amplifies an RF signal; a voltage control circuit that outputs a first instruction to output a low voltage when an output power is equal to or lower than a given value, and outputs a second instruction to output a high voltage when the output power is larger than the given value; and a voltage converter circuit that converts the drain voltage to a voltage lower than the drain voltage and applies the converted voltage to drain terminals of the carrier amplifier and the peak amplifier according to the first instruction, and applies the drain voltage directly to the drain terminals of the carrier amplifier and the peak amplifier according to the second instruction.
摘要翻译：提供了一种功率放大装置，包括：输出漏极电压的直流电源; 包括并联连接的载波放大器和峰值放大器的Doherty放大器，并放大RF信号; 电压控制电路，当输出功率等于或低于给定值时，输出第一指令以输出低电压，并且当输出功率大于给定值时输出第二指令以输出高电压; 以及电压转换器电路，其将漏极电压转换为低于漏极电压的电压，并根据第一指令将转换的电压施加到载波放大器和峰值放大器的漏极端子，并将漏极电压直接施加到漏极端子的载波放大器和峰值放大器。

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