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    • 14. 发明授权
    • Polysulfone porous membrane and a method of manufacturing the same
    • 聚砜多孔膜及其制造方法
    • US06284137B1
    • 2001-09-04
    • US09249165
    • 1999-02-12
    • Akira HajikanoKei MuraseJun Kamo
    • Akira HajikanoKei MuraseJun Kamo
    • B01D7168
    • B01D71/68B01D67/0011B01D69/02B01D69/08B01D2323/06B01D2323/08B01D2323/10B01D2323/12
    • The present invention relates to a polysufone porous membrane having a high water flux, an excellent resistance to moist heat and an excellent repercolation characteristic, and which comprises a mixed polymer having polyarylsulfone and polyethersulfone at a ratio of from 9/1-1/9 (by weight), the membrane being a graded porous membrane forming a cross-linked polymer network wherein a number of micropores being interconnected from one surface to the other surface, and the membrane comprising two layers wherein one layer being a dense layer having a number of pores with pore sizes in the range of 0.01-1 &mgr;m and thereby having a separation function, and the other layer being a graded type supporting layer supporting said dense layer and having a pore size distribution wherein the pores existing therein and having sizes of 1-100 &mgr;m increase continuously from the dense layer side toward the other surface side, wherein the separation particle size is not larger than 0.5 &mgr;m, and a method of manufacturing the same.
    • 本发明涉及一种具有高水通量,优异的耐湿热性和优异的再聚合特性的多分散多孔膜,其包含具有聚芳基砜和聚醚砜的混合聚合物,其比例为9 / 1-1 / 9( 所述膜是形成交联聚合物网络的分级多孔膜,其中多个微孔从一个表面互连到另一个表面,并且所述膜包括两层,其中一层是致密层,其中多个 孔径在0.01-1μm范围内并因此具有分离功能的孔,另一层是支撑所述致密层并具有孔尺寸分布的梯度型支撑层,其中存在于其中并具有1- 100μm从致密层侧向另一个表面侧连续增加,其中分离粒度不大于0.5μm,以及方法 制造相同。
    • 15. 发明授权
    • Polymeric resist mask composition
    • 聚合物抗蚀剂掩模组合物
    • US4125672A
    • 1978-11-14
    • US760374
    • 1977-01-19
    • Masami KakuchiShungo SugawaraKei MuraseKentaro Matsuyama
    • Masami KakuchiShungo SugawaraKei MuraseKentaro Matsuyama
    • G03F7/004C08F20/00C08F20/22G03F7/039H01F41/34H01L21/027B05D3/06
    • G03F7/039H01F41/34Y10T428/3154Y10T428/31667
    • A polymeric resist mask composition thinly coated on a semiconductor substrate, wherein the prescribed portions of said resist mask are exposed to high energy rays such as electron beams, X-rays or ultraviolet rays for degradation, and the degraded portions of the resist mask are removed by an organic solvent to present a prescribed resist mask pattern on the semiconductor substrate, which comprises a halogenated polymethacrylic ester whose composition is expressed by the general formula ##STR1## (WHERE R denotes a halogenated alkyl radical including a halogen element selected from the group consisting of fluorine, chlorine and bromine, and at least one fluorine atom in case said radical contains chlorine or bromine and n indicates an average polymerization degree of 100 to 20,000) and an organic solvent for said halogenated polymethacrylate.
    • 薄膜涂覆在半导体衬底上的聚合物抗蚀剂掩模组合物,其中所述抗蚀剂掩模的规定部分暴露于诸如电子束,X射线或紫外线的高能射线以降解,并且去除抗蚀剂掩模的劣化部分 通过有机溶剂在半导体衬底上呈现规定的抗蚀剂掩模图案,其包含卤化聚甲基丙烯酸酯,其组成由通式“IMAGE”表示(其中R表示包含选自以下的卤素元素的卤代烷基: 氟,氯和溴,以及在所述基团含有氯或溴的情况下至少一个氟原子,n表示平均聚合度为100至20,000)和所述卤代聚甲基丙烯酸酯的有机溶剂。