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11. 发明专利

JPH03138353A PRODUCTION OF THIN OXIDE FILM 失效
公开(公告)号：JPH03138353A
公开(公告)日：1991-06-12
申请号：JP27337789
申请日：1989-10-20
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SHARP KK , SANYO ELECTRIC CO , NIPPON STEEL CORP , NEC CORP
发明人： KITA RYUSUKE , YOSHIDA ISAO , TEJIMA HIDEKAZU , SUZUKI KATSUMI , MORISHITA TADATAKA
IPC分类号： C04B41/87 , C01B13/14 , C01G1/00 , C23C14/02 , C23C14/08 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To produce a thin single crystal oxide film having high quality and high purity with superior reproducibility by evaporating constituent elements other than oxygen in vacuum, subjecting oxygen ions to energy control by means of electric field, and then irradiating a substrate with both mentioned above. CONSTITUTION:A substrate 6 composed of MgO, SrTiO3, LaGaO3, LaAlO3, Si, GaAs, Pt, etc., is disposed in an evacuated vacuum chamber 1. This substrate 6 is irradiated with Ar ionized by means of an ion generator 2 and accelerated by means of electric field, by which the surface of the substrate 6 is cleaned. Subsequently, O ions generated by means of the above ion generator 2 and separated by means of a mass spectrograph 3 are focused by means of a focusing lens 4. The above O ions are decelerated by a decelerating electrode 5 and O ion energy is controlled by an ionic current by means of a bias electric power source 10, with which the substrate 6 is irradiated. Simultaneously, constituent elements, such as Y, Ba, and Ca, are evaporated from evaporation sources 7 and the substrate 6 is irradiated with the resulting vapors in the form of molecular beams 9, respectively. By this method, the thin single crystal oxide film of Y1Ba2Ca3O7-x, etc., having superior superconductivity can be formed.

12. 发明专利

JPH0518730A SURFACE ANALYZING APPARATUS 失效
公开(公告)号：JPH0518730A
公开(公告)日：1993-01-26
申请号：JP19706591
申请日：1991-07-11
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , FUJIKURA LTD , ASAHI GLASS CO LTD , SHOWA ELECTRIC WIRE & CABLE CO
发明人： USUI TOSHIO , AOKI YUJI , KAMEI MASAYUKI , MORISHITA TADATAKA
IPC分类号： G01B15/00 , G01B15/04 , G01B15/08 , G01N23/225 , H01J37/244 , H01J37/252 , H01J37/256
摘要： PURPOSE:To carry out component analysis of a specimen and obtain an enlarged image of the surface of the specimen simultaneously by radiating electron beam to the surface of the specimen and detecting the x-ray and secondary electron beam emitted by excitation of the surface of the specimen. CONSTITUTION:Electron beam is struck against the surface of a specimen at incidence angle thetag (

13. 发明专利

JPH0545308A SURFACE ANALYZING APPARATUS 失效
公开(公告)号：JPH0545308A
公开(公告)日：1993-02-23
申请号：JP22872491
申请日：1991-08-14
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , FUJIKURA LTD , SHOWA ELECTRIC WIRE & CABLE CO , ASAHI GLASS CO LTD
发明人： USUI TOSHIO , AOKI YUJI , KAMEI MASAYUKI , MORISHITA TADATAKA
IPC分类号： G01N23/225 , G01N23/223
摘要： PURPOSE:To obtain an apparatus which can capture the characteristic X rays from the surface of an excited sample and can analyze the component of the surface of the sample and wherein an energy dispersion type X-ray detector for capturing the characteristic X rays can be readily attached and removed. CONSTITUTION:An energy source for emitting energy particles into a sample 1 and an energy dispersion type X-ray detector 18 are attached to a vacuum container 20 for containing a sample 1. A connecting chamber 79 which is freely evaluated into the vacuum state is independently formed for the vacuum container 20. The energy dispersion type X-ray detector 28 is attached to the connecting chamber 79 so that the detector can be freely attached and removed. The characteristic X rays emitted from the surface of the excited sample 1 are captured at the total reflection angle. Thus, the component of the thin film of the surface of the sample 1 can be analyzed. When, the energy dispersion type X-ray detector 28 is removed from the connecting chamber 79, the detector can be removed without breaking the vacuum state of the vacuum container 20.

14. 发明专利

JPH0545307A METHOD AND APPARATUS FOR ANALYZING SURFACE 失效
公开(公告)号：JPH0545307A
公开(公告)日：1993-02-23
申请号：JP22872391
申请日：1991-08-14
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , FUJIKURA LTD , ASAHI GLASS CO LTD , SHOWA ELECTRIC WIRE & CABLE CO
发明人： USUI TOSHIO , KAMEI MASAYUKI , AOKI YUJI , MORISHITA TADATAKA
IPC分类号： G01N13/00 , G01N23/223
摘要： PURPOSE:To improve the detecting accuracy at the thin part of the surface of a sample by emitting X rays on the sample at a low incident angle, generating fluorescence X rays from the sample, and taking out the X rays in the vicinity of the total reflection angle of the X rays with an energy-dispersion type X-ray detector. CONSTITUTION:X rays are emitted from an X-ray generator 48 on the surface of a sample 1 at an incident angle of about 4 deg. or less. Then, the part of the surface is excited, and the fluorescence X rays (characteristic X rays) are emitted. The characteristic X rays are rapidly increased at the specified take-out angle of 4 deg. or less (total reflecting angle). At this angle, the characteristic X rays are taken out with a probe 30 of an energy-dispersion X-ray detector 28. Thus, the characteristic X rays corresponding to the component of the thin film of the surface of the sample can be specified. With the incident angle of the X rays as THETAg, a diffraction-X-ray detecting device 18 is moved up and down along a rail member 17. The X-ray taking-out angle is adjusted so that the angle becomes 2THETAg with respect to the extending line of the X rays in the incident direction. Under this state, the sample 1 and the detecting device 18 are turned by the specified angle at the same time. Thus, the X-ray diffraction peak of the surface part of the sample can be detected.

15. 发明专利

JPH06191995A METHOD FOR PRODUCTION OXIDE SUPERCONDUCTIVE THIN FILM 失效
公开(公告)号：JPH06191995A
公开(公告)日：1994-07-12
申请号：JP34288092
申请日：1992-12-22
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ASAHI GLASS CO LTD , FUJIKURA LTD , SHOWA ELECTRIC WIRE & CABLE CO , TOHOKU ELECTRIC POWER CO
发明人： KAMEI MASAYUKI , USUI TOSHIO , AOKI YUJI , OOKODA SEIYA , MORISHITA TADATAKA
IPC分类号： C30B29/22 , G01N23/225 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To provide the method capable of producing the oxide superconductive thin film having a high quality. CONSTITUTION:The method for producing a multi-element oxide superconductive thin film by forming a deposited film on a substrate in a film-forming device is characterized by injecting electron beams on the surface of the deposited film at prescribed incidence angles during the deposition of the deposited film to excite atoms on the surface of the deposited film, determining the film thickness dependency of the strength of a characteristic X ray generated from the excited atoms on the surface of the deposited film, determining the taking-angle dependency of the strength of the characteristic X ray generated from the excited atoms on the surface of the deposited film to confirm the joining surface of the deposited film, the components in the surface atom layer of the deposited film and the flatness of the deposited film, and subsequently forming the deposited film, while controlling the film-forming conditions of the deposited film on the basis of the confirmed results. This method permits to obtain the deposited film good in flatness an coverage and thereby the production of the oxide superconductive thin film having a high quality is attained.

16. 发明专利

JPH05149720A METHOD AND DEVICE FOR INSPECTING SUPERCONDUCTING OXIDE FILM 失效
公开(公告)号：JPH05149720A
公开(公告)日：1993-06-15
申请号：JP31508991
申请日：1991-11-29
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , HITACHI LTD
发明人： HIGASHIYAMA KAZUHISA , HIRABAYASHI IZUMI , MORISHITA TADATAKA , TANAKA SHOJI
IPC分类号： G01B11/06 , G01B11/30 , H01L39/00 , H01L39/24
摘要： PURPOSE:To measure the forming speed, thickness, and surface smoothness of a superconducting oxide film by irradiating the film with a laser beam while the film is formed on a substrate and measuring the intensity of reflected light from the irradiated section of the film. CONSTITUTION:When a superconducting oxide film 20 formed on a substrate 5 is irradiated with a laser beam 25 having a wavelength lambda, a phase difference delta is produced between a reflected beam 26 form the upper surface of the film 20 and another reflected beam 27 from the lower surface of the film 20. The difference can be expressed by delta=2pi/lambda1.2nd.Cosx+ or -pi, where lambda1, (n), (d), and (x) respectively represent the wavelength of the laser beams 25, refractive index of the film 20, thickness of the film 20, and incident angle of the laser beam 25 in the film 20. It can be understood from the expression that the film thickness (d) at which the intensities of the reflected beams become maximum and minimum are proportional to 1/4 of the wavelength of the laser beam. Therefore, when each peak value is detected, the film thickness (d) and film forming speed can be found. In addition, as the film thickness (d) increases, the vibrational amplitudes of the reflected beams become smaller and the value of a base line decreases. Since the light absorbing amount of the film 25 is a function of the film thickness, the surface smoothness of the film 25 can be found from the intensity reducing speeds of the reflected beams by calculating the function.

17. 发明专利

JPH05139737A OXIDE THIN FILM AND FILM FORMING METHOD THEREFOR 失效
公开(公告)号：JPH05139737A
公开(公告)日：1993-06-08
申请号：JP30082091
申请日：1991-11-15
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , HOKKAIDO ELECTRIC POWER
发明人： HONMA KOUJI , MORISHITA TADATAKA
IPC分类号： C01G1/00 , C01G3/00 , C04B41/89 , C23C14/08 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/22 , H01L39/24
摘要： PURPOSE:To provide a method to film-form a joint film of the 1st oxide thin film exhibiting superconductive property with the 2nd oxide thin film exhibiting insulation property or, if necessary, semiconductive property by a method enhancing production efficiency and improving film quality and film property. CONSTITUTION:The 1st and 2nd target having the same chemical composition are used. The 1st oxide thin film is formed by sputtering the 1st target with 100V target cathode voltage by from an external D.C. voltage source. Next, when switching to the 2nd target, target cathode voltage is changed to 50V self-bias voltage without changing another film-forming condition. By the change, sputtering of the 2nd target is executed in succession to sputtering of the 1st target without discontinuance of time and the 2nd oxide thin film is film-formed on the 1st oxide thin film.

18. 发明专利

JPH10330193A PRODUCTION OF OXIDE SUPERCONDUCTING FILM 失效
公开(公告)号：JPH10330193A
公开(公告)日：1998-12-15
申请号：JP9819298
申请日：1998-03-27
申请人： NEC CORP , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： MIURA SADAHIKO , MORISHITA TADATAKA , ENOMOTO YOICHI
IPC分类号： C01G1/00 , C01G3/00 , C30B29/22 , H01B13/00 , H01L21/368 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To make at high rate an oxide superconducting film with smooth surface and uniform thickness on a simple substrate structure. SOLUTION: This oxide supreconducting film is produced by the following method: a melt 1 for liquid phase epitaxial growth to be used comprises 10 wt.% Y1 Ba2 Cu3 Ox and 90 wt.% Ba3 Cu7 O10 , while a seed crystal (substrate) 2 to be used comprises 100 wt.% MgO; a film-forming atmosphere consists of 2 at.% oxygen and 98 at.% nitrogen; film-forming temperature is set at 900-970 deg.C; the objective film, i.e., Y1 Ba2 Cu3 Ox film 3, is formed by immersing the seed crystal 2 in the melt 1; after finishing the film formation, a rotating shaft 4 supporting the seed crystal 2 is gradually pulled up from position (a) via position (b) to position (c) as shown in the figure; the appropriate angle of inclination of the substrate relative to the melt 1 is 1 to 44 degree; subsequently, the shaft 4 is revolved at a rate of as high as 300 to 3,000 rpm for 5 s to 5 min as shown in (d) in the figure to remove an excess of residual melt 5 from the substrate.

19. 发明专利

JPH0517877A METHOD AND APPARATUS FOR PRODUCTION OF OXIDE THIN FILM 失效
公开(公告)号：JPH0517877A
公开(公告)日：1993-01-26
申请号：JP16973491
申请日：1991-07-10
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SHARP KK , KOBE STEEL LTD , ELECTRIC POWER DEV CO
发明人： KITA RYUSUKE , HASE TAKASHI , SASAKI MASATO , MORISHITA TADATAKA
IPC分类号： C23C8/12 , C04B41/50 , C04B41/85 , C04B41/87 , C23C8/16 , C23C14/08 , C23C14/24 , C23C14/58 , C30B23/02
摘要： PURPOSE:To provide the method and apparatus for producing an oxide thin film which produce the oxide thin film having excellent crystallinity and purity with good productivity while exactly controlling the compsh. thereof. CONSTITUTION:The pressure in a vacuum chamber 1 is regulated to attain >=1X10 Torr and thereafter, prescribed metal elements are deposited by evaporation on a substrate 3 to form the metallic thin film within the vacuum chamber 1. In succession, a cover member 7 is risen and is brought into tight contact with a receiving part 10. A hermetic chamber which hermetically seals the substrate 3 by enclosing the substrate is constituted in the vacuum chamber 1 in this way. Geseous O2 is directly introduced into this hermetic chamber through a gas piping 8 in the state of maintaining the vacuum degree around the hermetic chamber to oxidize the above-mentioned metallic thin film and to form the oxide thin film. Simultaneously, the gas in the hermetic chamber is directly discharged outside the vacuum chamber through the gas piping 40.

20. 发明专利

JPH04311561A METHOD AND DEVICE FOR FORMING THIN FILM 失效
公开(公告)号：JPH04311561A
公开(公告)日：1992-11-04
申请号：JP7635991
申请日：1991-04-09
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , ULVAC KOOPOREETO CENTER KK , HITACHI CABLE , MITSUBISHI MATERIALS CORP
发明人： IZUMI HIROHIKO , OHATA KAZUMI , FUJINO SHUICHI , MORISHITA TADATAKA
IPC分类号： B01J19/12 , C01G1/00 , C01G3/00 , C23C14/28 , C30B29/22
摘要： PURPOSE:To continuously and stably form an excellent thin film on a substrate for a long time by partially melting a target with a heating means and irradiating the target with a thin film forming laser beam. CONSTITUTION:A vacuum pump 9 and a gas feed part 8 are actuated to adjust the pressure and atmosphere in a vacuum vessel 1, and a target 5 is heated by a heating means 6 and melted. Under such conditions, a thin film forming laser beam from a laser oscillator 7 is condensed on the molten target 5 through an inlet window 1a, then the target is irradiated the laser beam. Accordingly, a thin film forming atom is spattered from the target and deposited on the opposed target 3 held at a specified temp. to form a thin film. As a result, a fusifomr structre is not formed on the target 5 surface, the surface condition of the target 5 is kept constant, and an excellent thin film is continuously formed for a long time.

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