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11. 发明申请

WO2004084229A1 PROGRAMMABLE RESISTANCE MEMORY DEVICE 审中-公开
标题翻译：可编程电阻存储器件
公开(公告)号：WO2004084229A1
公开(公告)日：2004-09-30
申请号：PCT/JP2003/003257
申请日：2003-03-18
申请人： KABUSHIKI KAISHA TOSHIBA , TODA, Haruki
发明人： TODA, Haruki
IPC分类号： G11C11/36
CPC分类号： G11C13/0011 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143
摘要： programmable resistance memory device includes: a semiconductor substrate; at least one cell array, in which memory cells are arranged, formed above the semiconductor substrate, each the memory cell having a stack structure of a programmable resistance element and an access element, the programmable resistance element storing a high resistance state or a low resistance state determined due to the polarity of voltage application in a non-volatile manner, the access element having such a resistance value in an off-state in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate as underlying the cell array for data reading and data writing in communication with the cell array.
摘要翻译：可编程电阻存储器件包括：半导体衬底; 形成在半导体衬底上方的至少一个单元阵列，其中存储单元被布置，每个存储单元具有可编程电阻元件和存取元件的堆叠结构，该可编程电阻元件存储高电阻状态或低电阻状态由于非易失性地施加的电压的极性而被确定，所述存取元件具有处于选择状态下的十倍以上的一定电压范围的截止状态的电阻值; 以及形成在半导体衬底上的读/写电路，用于与用于与单元阵列通信的数据读取和数据写入的单元阵列。

12. 发明申请

WO2012067218A1 ABSORBENT ARTICLE 审中-公开
标题翻译：吸收品
公开(公告)号：WO2012067218A1
公开(公告)日：2012-05-24
申请号：PCT/JP2011/076615
申请日：2011-11-14
申请人： UNICHARM CORPORATION , NAKAJIMA, Kaiyo , TODA, Haruki
发明人： NAKAJIMA, Kaiyo , TODA, Haruki
IPC分类号： A61F13/49 , A61F13/53
CPC分类号： A61F13/537 , A61F13/495 , A61F13/535 , A61F2013/4953 , A61F2013/4956 , A61F2013/4958
摘要： To provide an absorbent article ensuring that even when the excreted urine diffuses by running down the wearer's skin, the skin is prevented from remaining wetted. In the absorbent article of the present invention, when an artificial urine is dropped and absorbed in the urination region of the crotch region 13, where an absorbent sheet 60 is not disposed, the return amount of the artificial urine in the buttock region of the rear waist region 12, where an absorbent sheet 60 is disposed, takes a value of 200 times less than the return amount of the artificial urine in the urination region; and the return amount of the artificial urine in the buttock region when the artificial urine is dropped and absorbed in the buttock region takes a value of 0.7 or less of the return amount of the artificial urine in the urination region when the artificial urine is dropped and absorbed in the urination region.
摘要翻译：为了提供一种吸收性物品，确保即使当排泄的尿液通过使穿着者的皮肤下降而扩散时，防止皮肤保持润湿。在本发明的吸收性物品中，在未设置吸收性片材60的裆下区域13的排尿区域中人造尿液滴下并吸收时，后方的臀部区域中的人造尿液的返回量其中设置有吸收性片材60的腰围区域12的值比排尿区域中的人造尿液的返回量小200倍; 并且当人造尿在臀部区域下落并吸收时，臀部区域中的人造尿液的返回量在人造尿液滴下时排尿区域中的人造尿液的返回量的值为0.7以下，吸收在排尿区域。

13. 发明申请

WO2012067216A1 ABSORBENT ARTICLE 审中-公开
标题翻译：吸收品
公开(公告)号：WO2012067216A1
公开(公告)日：2012-05-24
申请号：PCT/JP2011/076613
申请日：2011-11-14
申请人： UNICHARM CORPORATION , TODA, Haruki , NAKAJIMA, Kaiyou
发明人： TODA, Haruki , NAKAJIMA, Kaiyou
IPC分类号： A61F13/49 , A61F13/15 , A61F13/53
CPC分类号： A61F13/51 , A61F13/4942 , A61F13/4946 , A61F13/49473 , A61F13/495 , A61F13/532 , A61F13/5323 , A61F13/533 , A61F13/53717 , A61F13/53747 , A61F13/539 , A61F2013/530554 , A61F2013/530562 , A61F2013/530868 , A61F2013/8497
摘要： An absorbent article ensuring that even when the excreted urine diffuses by running down the wearer's skin, the skin is prevented from remaining wetted. An absorbent article 1 in which the longitudinal direction from the front side to the rear side consists of a front waist region 11, a rear waist region 12 and a crotch region 13 located between these regions and an absorbent sheet 60 between the topsheet 20 and the second sheet 50 comprising at least one liquid-pervious sheet having sandwiched thereby an absorbent polymer is present between a topsheet 20 and a second sheet 50, wherein: the second sheet 50 is higher in the liquid diffusibility than the topsheet 20; the topsheet 20, the backsheet 30, the absorption body 40 and the second sheet 50 are disposed across the front waist region 11, the crotch region 13 and the rear waist region 12; and the absorbent sheet 60 is disposed in at least a part of the rear waist region 12.
摘要翻译：一种吸收性物品，确保即使当排泄的尿液通过穿过穿着者的皮肤而扩散时，防止皮肤保持润湿。从前侧到后侧的纵向方向的吸收性物品1由位于这些区域之间的前腰围区域11，后腰围区域12和裆下区域13以及在顶片20和在顶片20和第二片50之间存在包含至少一个其中夹有吸收性聚合物的透液性片的第二片50，其中：第二片50的液体扩散性高于顶片20; 顶片20，底片30，吸收体40和第二片50跨过前腰围区域11，裆下区域13和后腰围区域12设置; 并且吸收性片材60设置在后腰围区域12的至少一部分中。

14. 发明申请

WO2012067217A1 ABSORBENT ARTICLE 审中-公开
标题翻译：吸收品
公开(公告)号：WO2012067217A1
公开(公告)日：2012-05-24
申请号：PCT/JP2011/076614
申请日：2011-11-14
申请人： UNICHARM CORPORATION , NAKAJIMA, Kaiyo , TODA, Haruki
发明人： NAKAJIMA, Kaiyo , TODA, Haruki
IPC分类号： A61F13/49 , A61F13/15 , A61F13/53
CPC分类号： A61F13/53747 , A61F13/49426 , A61F13/5323 , A61F13/535 , A61F2013/530525 , A61F2013/530532 , A61F2013/530554 , A61F2013/530562 , A61F2013/5355 , A61F2013/53795
摘要： An absorbent article ensuring that even when excreted urine diffuses by running down the wearer's skin, the urine is prevented from leaking out of the absorbent article. In the absorbent article 1 of the present invention, an absorbent sheet 50 has at least one absorbent polymer-existing region 54 in which the absorbent polymer 51 is sandwiched by at least one liquid-pervious sheet 52 and 53 and at least one absorbent polymer-nonexisting region 55 which is free of absorbent polymer. The at least a part of the absorbent sheet 50 is disposed in a rear waist region 12, and a planar shape of the absorbent polymer-existing region 54 disposed on the rear waist region 12 side of the longitudinal center of the crotch region 13 of the absorbent sheet 50 is a nearly V-shaped with an apex facing in the direction from the front waist region 11 to the rear waist region 12 in the longitudinal direction of the absorbent article 1.
摘要翻译：一种吸收性物品，其确保即使排泄的尿液通过使穿着者的皮肤下降而扩散，也能防止尿液从吸收性物品中泄漏出来。在本发明的吸收性物品1中，吸收性片材50具有至少一个吸收性聚合物存在区域54，吸收性聚合物51由至少一个透液性片材52,53和至少一种吸收性聚合物 - 不存在吸收性聚合物的非现有区域55。吸收性片材50的至少一部分设置在后腰围区域12中，并且设置在吸收性聚合物存在区域54的裆部区域13的纵向中心的后腰围区域12侧的平面形状吸收性片材50是沿着吸收性物品1的长度方向从前腰围区域11到后腰围区域12的方向形成的大致V字状的顶点。

15. 发明公开

EP2715731A1 SEMICONDUCTOR MEMORY DEVICE 有权转让
标题翻译：半导体存储器件
公开(公告)号：EP2715731A1
公开(公告)日：2014-04-09
申请号：EP12790300.3
申请日：2012-03-09
申请人： Kabushiki Kaisha Toshiba
发明人： DEGUCHI, Jun , TODA, Haruki
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0002 , G11C13/0007 , G11C2013/0073 , G11C2013/0085 , G11C2013/0088 , G11C2013/009 , G11C2213/71 , G11C2213/77
摘要： A semiconductor memory device comprises a memory cell array including plural memory cells provided at the intersections of plural first lines and plural second lines; and a write circuit. The write circuit, on execution of a write operation, executes a first step of applying a voltage across the first and second lines connected to a data-write-targeted, selected memory cell, and a different voltage across the first and second lines connected to a data-write-untargeted, unselected memory cell of the plural memory cells and, after execution of the first step, executes a second step of applying a voltage, required for data write, across the first and second lines connected to the selected memory cell, and bringing at least one of the first and second lines connected to the unselected memory cell into the floating state.
摘要翻译：半导体存储器件包括：存储单元阵列，包括设置在多条第一线和多条第二线的交叉处的多个存储单元; 和一个写电路。写入电路在执行写入操作时执行第一步骤，在连接到以数据写入为目标的选定存储器单元的第一和第二线路上施加电压，并且在连接到第一和第二线路的第一和第二线路上施加不同电压多个存储单元的数据写入不定向的未选定存储单元，并且在执行第一步骤之后，执行第二步骤，在连接到所选存储单元的第一和第二线上施加数据写入所需的电压以及将连接到未选存储单元的第一和第二线中的至少一条置于浮置状态。

16. 发明公开

EP1609154A1 PHASE CHANGE MEMORY DEVICE 有权
标题翻译：相变存储设备
公开(公告)号：EP1609154A1
公开(公告)日：2005-12-28
申请号：EP03816361.4
申请日：2003-03-18
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： TODA, Haruki
IPC分类号： G11C11/34 , H01L27/06 , H01L21/822
CPC分类号： G11C13/0004 , G11C8/08 , G11C11/36 , G11C13/0007 , G11C13/0028 , G11C13/004 , G11C13/0069 , G11C2013/0042 , G11C2013/009 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1675
摘要： A phase change memory device includes a substrate, a plurality of cell arrays stacked above the substrate and each including a matrix layout of a plurality of memory cells, each the memory cell storing therein as data a resistance value determinable by a phase change, a write circuit configured to write a pair cell constituted by two neighboring memory cells within the plurality of cell arrays in such a manner as to write one of the pair cell into a high resistance value state and write the other into a low resistance value state, and a read circuit configured to read complementary resistance value states of the pair cell as a one bit of data.

17. 发明授权

EP1609154B1 PHASE CHANGE MEMORY DEVICE 有权
标题翻译：相变存储设备
公开(公告)号：EP1609154B1
公开(公告)日：2013-12-25
申请号：EP03816361.4
申请日：2003-03-18
申请人： Kabushiki Kaisha Toshiba
发明人： TODA, Haruki
IPC分类号： G11C11/34 , H01L27/06 , H01L21/822
CPC分类号： G11C13/0004 , G11C8/08 , G11C11/36 , G11C13/0007 , G11C13/0028 , G11C13/004 , G11C13/0069 , G11C2013/0042 , G11C2013/009 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1675

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