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11. 发明授权

US06287477B1 Solvents for processing silsesquioxane and siloxane resins 失效
标题翻译：用于处理倍半硅氧烷和硅氧烷树脂的溶剂
公开(公告)号：US06287477B1
公开(公告)日：2001-09-11
申请号：US09420091
申请日：1999-10-18
申请人： Nigel P. Hacker , Jan Nedbal
发明人： Nigel P. Hacker , Jan Nedbal
IPC分类号： B44C122
CPC分类号： H01L21/02087 , H01L21/31111 , H01L21/3124
摘要： Methods for removing unwanted siloxane and silsesquioxane dielectric film precursor residues from substrates and spin on coating devices are provided. The methods of the invention use liquid silicones to dissolve the film precursors. Solutions of the film precursors in the silicones do not undergo gelling or increase in molecular weight.
摘要翻译：提供从底物上除去不想要的硅氧烷和倍半硅氧烷介电膜前体残余物并在涂覆装置上旋转的方法。本发明的方法使用液体硅氧烷来溶解膜前体。硅氧烷中膜前体的溶液不会发生凝胶化或分子量增加。

12. 发明授权

US6043330A Synthesis of siloxane resins 失效
标题翻译：硅氧烷树脂的合成
公开(公告)号：US6043330A
公开(公告)日：2000-03-28
申请号：US55244
申请日：1998-04-06
申请人： Nigel P. Hacker , Lisa K. Figge , Scott Lefferts
发明人： Nigel P. Hacker , Lisa K. Figge , Scott Lefferts
IPC分类号： C08G77/04 , C08G77/08 , C08G77/12 , C09D183/05 , H01L21/312 , H01L21/768 , H01L23/532 , C08G77/06
CPC分类号： C08G77/04 , C08G77/12 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L23/5329 , H01L2924/0002
摘要： Novel processes for preparing hydridosiloxane and organohydridosiloxane resins are disclosed. The processes of the invention broadly provide for the steps of contacting a silane monomer with a phase transfer catalyst in the presence of a reaction mixture that includes a nonpolar, e.g., hydrocarbon, solvent, and a polar solvent, e.g., alcohol and water. The process is conducted under conditions effective to catalytically convert said silane monomer into hydridosiloxane and organohydridosiloxane resins. Recovery of the products is advantageously aided by the ease of separating the phase transfer catalyst from the dual phase reaction mixture by separating the immiscible polar solvent carrying the catalyst from the nonpolar solvent that carries the product. Hydridosiloxane and organohydridosiloxane resins produced by the processes of the invention are also provided.
摘要翻译：公开了制备氢硅氧烷和有机氢硅氧烷树脂的新方法。本发明的方法广泛地提供了在包含非极性例如烃，溶剂和极性溶剂如醇和水的反应混合物存在下使硅烷单体与相转移催化剂接触的步骤。该方法在有效地将所述硅烷单体催化转化成氢硅氧烷和有机氢硅氧烷树脂的条件下进行。通过将携带催化剂的不混溶的极性溶剂与携带产物的非极性溶剂分离，可有利地辅助相分离催化剂与双相反应混合物的分离。还提供了通过本发明的方法制备的氢硅氧烷和有机氢硅氧烷树脂。

13. 发明授权

US07029826B2 Method to restore hydrophobicity in dielectric films and materials 失效
公开(公告)号：US07029826B2
公开(公告)日：2006-04-18
申请号：US10312295
申请日：2001-06-19
申请人： Nigel P. Hacker , Michael Thomas , James S. Drage
发明人： Nigel P. Hacker , Michael Thomas , James S. Drage
IPC分类号： G03C5/56
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/0234 , H01L21/02343 , H01L21/02359 , H01L21/02362 , H01L21/3105 , H01L21/31058 , H01L21/3122 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76831 , Y10T428/24802
摘要： Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.

14. 发明授权

US07011889B2 Organosiloxanes 失效
标题翻译：有机硅氧烷
公开(公告)号：US07011889B2
公开(公告)日：2006-03-14
申请号：US10078919
申请日：2002-02-19
申请人： William B. Bedwell , Nigel P. Hacker , Roger Y. Leung , Nancy Iwamoto , Jan Nedbal , Songyuan Xie , Lorenza Moro , Shyama P. Mukherjee
发明人： William B. Bedwell , Nigel P. Hacker , Roger Y. Leung , Nancy Iwamoto , Jan Nedbal , Songyuan Xie , Lorenza Moro , Shyama P. Mukherjee
IPC分类号： B32B9/04
CPC分类号： C08G77/04 , C08G77/12 , G03F7/0751 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/76807 , H01L21/76829 , H01L21/76835 , Y10T428/265 , Y10T428/31663
摘要： The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.
摘要翻译：本发明提供了包含至少80重量％的式I的有机硅氧烷：[Y 0.01-1.0 SiO 2 1.5-2] 0.01-1.0 SiO <1.5-2 其中Y是芳基; Z是烯基; a是一级方程式的15％至70％; b是式I的2％至50％; 并且c为式I的20％至80％。本发明的组合物可用于半导体器件，并且可有利地用作蚀刻停止层。

15. 发明授权

US06440550B1 Deposition of fluorosilsesquioxane films 失效
标题翻译：氟倍半硅氧烷薄膜的沉积
公开(公告)号：US06440550B1
公开(公告)日：2002-08-27
申请号：US09420052
申请日：1999-10-18
申请人： Nigel P. Hacker
发明人： Nigel P. Hacker
IPC分类号： B32B300
CPC分类号： H01L21/31629 , C01B33/113 , C09D4/00 , C09D183/08 , C23C16/401 , H01L21/02131 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/3124 , Y10T428/249969 , Y10T428/31663 , C08G77/24
摘要： There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.
摘要翻译：提供了氟取代的倍半硅氧烷薄膜前体的阵列，其具有氟基与倍半硅氧烷笼的硅原子结合的结构。在第一方面，本发明提供一种组合物，其包含具有式[F-SiO 1.5] x [H-SiO 1.5] y的汽化材料，其中x + y = n，n为2至30的整数，x是1和n之间的整数，y是0和n之间的整数。还提供了由这些前体制成的膜和包含这些膜的物体。

16. 发明授权

US4760013A Sulfonium salt photoinitiators 失效
标题翻译：锍盐光引发剂
公开(公告)号：US4760013A
公开(公告)日：1988-07-26
申请号：US15402
申请日：1987-02-17
申请人： Nigel P. Hacker , Carl E. Larson
发明人： Nigel P. Hacker , Carl E. Larson
IPC分类号： C08G59/18 , C07C67/00 , C07C325/00 , C07C381/12 , C08G59/00 , C08G59/68 , G03F7/029 , G03F7/031 , G03C5/04 , C07F9/90 , C08F8/18 , G03C1/68
CPC分类号： C07C381/12 , G03F7/029 , C07C2103/24 , Y10S430/115 , Y10S430/122
摘要： Alkyldiarylsulfonium salts of 9, 10,-dithiophenoxyanthracene are useful as photoinitiators in resist compositions, such as epoxy resin formulations, particularly using long wavelength light.

17. 发明授权

US07858294B2 Method to restore hydrophobicity in dielectric films and materials 有权
标题翻译：恢复介电薄膜和材料疏水性的方法
公开(公告)号：US07858294B2
公开(公告)日：2010-12-28
申请号：US11784081
申请日：2007-04-05
申请人： Nigel P. Hacker , Michael Thomas , James S. Drage
发明人： Nigel P. Hacker , Michael Thomas , James S. Drage
IPC分类号： H01L21/465
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02337 , H01L21/0234 , H01L21/02343 , H01L21/02359 , H01L21/02362 , H01L21/3105 , H01L21/31058 , H01L21/3122 , H01L21/31695 , H01L21/7682 , H01L21/76826 , H01L21/76831 , Y10T428/24802
摘要： Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.
摘要翻译：无论是纳米多孔泡沫二氧化硅电介质还是无孔二氧化硅电介质，二氧化硅电介质膜都容易被制造方法和试剂所破坏，这些方法和试剂可以从电介质表面减少或去除疏水性质。本发明提供了赋予衬底上存在的这种损坏的二氧化硅介电膜的疏水性的方法。本发明还提供了用于赋予新的和损坏的二氧化硅介电膜的疏水性的基于等离子体的方法。还提供了通过本发明方法制备的半导体器件。

18. 发明授权

US06472076B1 Deposition of organosilsesquioxane films 失效
标题翻译：有机倍半硅氧烷膜沉积
公开(公告)号：US06472076B1
公开(公告)日：2002-10-29
申请号：US09420218
申请日：1999-10-18
申请人： Nigel P. Hacker
发明人： Nigel P. Hacker
IPC分类号： B32B900
CPC分类号： C23C16/401 , C07F7/21 , Y10T428/24999 , Y10T428/31663
摘要： There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C1 to C100 alkyl group. Also provided are films made from these precursors and objects comprising these films.
摘要翻译：提供了一种烷基取代的倍半硅氧烷薄膜前体的阵列，其具有其中烷基与倍半硅氧烷笼的硅原子键合的结构。烷基可以与其它烷基相同或不同。在第一方面，本发明提供一种组合物，其包含具有式[R-SiO 1.5] x [H-SiO 1.5] y的气化材料，其中x + y = n，n为2至30的整数，x是1和n之间的整数，y是0和n之间的整数。 R是C1至C100烷基。还提供了由这些前体制成的膜和包含这些膜的物体。

19. 发明授权

US06218020B1 Dielectric films from organohydridosiloxane resins with high organic content 失效
标题翻译：具有高有机含量的有机氢硅氧烷树脂的介电薄膜
公开(公告)号：US06218020B1
公开(公告)日：2001-04-17
申请号：US09227498
申请日：1999-01-07
申请人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge
发明人： Nigel P. Hacker , Scott P. Lefferts , Lisa K. Figge
IPC分类号： B32B904
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122 , Y10T428/265 , Y10T428/31663
摘要： A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation and 40 mole percent or greater of an organic substituent. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. The dielectric films of the present invention exhibit dielectric constants of approximately 2.8 or lower.
摘要翻译：提出了一种从含有机硅氧烷树脂的组合物在基片上制作电介质膜的方法。有机氢硅氧烷树脂具有笼形构象和40摩尔％以上的有机取代基。制造电介质膜的方法包括形成溶剂和有机氢硅氧烷树脂的溶液，将溶液分配在基材上，纺丝基板，烘烤基板以除去溶剂，并固化基板以形成电介质膜。本发明的电介质膜的介电常数为2.8以下。

20. 发明授权

US6143855A Organohydridosiloxane resins with high organic content 失效
公开(公告)号：US6143855A
公开(公告)日：2000-11-07
申请号：US44798
申请日：1998-03-20
申请人： Nigel P. Hacker , Scott Lefferts , Lisa Figge
发明人： Nigel P. Hacker , Scott Lefferts , Lisa Figge
IPC分类号： C08G77/08 , C08G77/12 , C09D183/05 , H01L21/312 , H01L21/768 , H01L23/532
CPC分类号： H01L21/02126 , C08G77/12 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L23/5329 , H01L2924/0002 , H01L2924/12044
摘要： An organohydridosiloxane polymer having a cage conformation, at least approximately 40 Mole percent carbon containing substituents and a dielectric constant of less than about 2.7 is presented. Each silicon atom of the cage polymer is bonded to at least three oxygen atoms and to either a hydrogen atom or an organic substituent. By providing such a caged structure with essentially no hydroxyl or alkoxy substituents, either on the polymer backbone or at terminal silicon atoms, essentially no chain lengthening polymerization can occur in solution. Such organohydridosiloxane resins having a molecular weight in the range from about 400 to about 200,000 atomic mass units were formed using a dual phase solvent system and either a solid phase or phase transfer catalyst to assist the condensation of hydridotrihalosilane with at least one organotrihalosilane.

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