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11. 发明申请

US20090166681A1 MOS Transistor and Semiconductor Device 有权
标题翻译： MOS晶体管和半导体器件
公开(公告)号：US20090166681A1
公开(公告)日：2009-07-02
申请号：US11968552
申请日：2008-01-02
申请人： Marc Tiebout , Daniel Kehrer , Domagoj Siprak , Pierre Mayr , Johannes Kunze , Christopher Weyers
发明人： Marc Tiebout , Daniel Kehrer , Domagoj Siprak , Pierre Mayr , Johannes Kunze , Christopher Weyers
IPC分类号： H01L29/78
CPC分类号： H01L23/5283 , H01L23/4824 , H01L23/528 , H01L29/41725 , H01L2924/0002 , H01L2924/30105 , H01L2924/00
摘要： According to one embodiment of the present invention, a MOS transistor includes a semiconductor layer including a source region, a drain region, and a channel region disposed between the source region and the drain region. A gate structure is arranged above the channel regions. A source wiring structure is arranged above the source region and is connected to the source region. A drain wiring structure is arranged above the drain region and is connected to the drain region. The width of the source wiring structure is larger than the width of the drain wiring structure, and the height of the source wiring structure is smaller than the height of the drain wiring structure, or vice versa.
摘要翻译：根据本发明的一个实施例，MOS晶体管包括半导体层，其包括源极区，漏极区和设置在源极区和漏极区之间的沟道区。栅极结构布置在沟道区域的上方。源极布线结构布置在源极区域的上方并与源极区域连接。漏极布线结构布置在漏极区上方并连接到漏极区。源极布线结构的宽度大于漏极布线结构的宽度，源极布线结构的高度小于漏极布线结构的高度，反之亦然。

12. 发明申请

US20080055803A1 INTEGRATED CIRCUIT ARRANGEMENT AND CIRCUIT ARRAY 有权
标题翻译：集成电路布置和电路阵列
公开(公告)号：US20080055803A1
公开(公告)日：2008-03-06
申请号：US11574066
申请日：2005-08-09
申请人： Christoph Kienmayer , Martin Streibl , Marc Tiebout
发明人： Christoph Kienmayer , Martin Streibl , Marc Tiebout
IPC分类号： H02H9/00
CPC分类号： H01L27/0251
摘要： One aspect is an integrated circuit arrangement. The arrangement includes a first terminal, which can be brought to a first supply potential, a second terminal, which can be brought to a second supply potential, and a supply potential path formed between the first terminal and the second terminal. There is an electrostatic discharge element at least in the supply potential path. There is a signal input pad, to which an input signal can be applied and a signal output, at an output signal can be provided. A first inductance is arranged between the signal input pad and the signal output, and a second inductance is arranged between the signal output and the first terminal.
摘要翻译：一个方面是集成电路装置。该布置包括可以被带到第一电源电位的第一端子，可以被带到第二电源电位的第二端子和形成在第一端子和第二端子之间的电源路径。至少在电源电位路径中存在静电放电元件。有一个信号输入焊盘，可以在输出信号上提供输入信号并输出信号。在信号输入焊盘和信号输出之间布置第一电感，并且在信号输出和第一端子之间布置第二电感。

13. 发明授权

US07298224B2 Amplifier circuit for an oscillator in a defined oscillating frequency range and oscillator circuit 有权
标题翻译：在定义的振荡频率范围和振荡器电路中的振荡器的放大器电路
公开(公告)号：US07298224B2
公开(公告)日：2007-11-20
申请号：US11361042
申请日：2006-02-23
申请人： Marcin Augustyniak , Ralf Brederlow , Marc Tiebout
发明人： Marcin Augustyniak , Ralf Brederlow , Marc Tiebout
IPC分类号： H03B5/36
CPC分类号： H03B5/326 , H03F1/34 , H03F3/345
摘要： An amplifier circuit for an oscillator in a defined oscillating frequency range includes a plurality of transconductors, wherein at least one transconductor has a positive transconductance, and wherein at least one other transconductor has a negative transconductance, wherein the transconductors together provide a positive amplification, and a passive impedance element coupled to at least one fed back transconductor, wherein the transconductance of the transconductor and the impedance element are dimensioned so that, in the oscillating frequency range, a given phase difference is present between a signal at the input and a signal at the output.
摘要翻译：用于定义的振荡频率范围的振荡器的放大器电路包括多个跨导体，其中至少一个跨导体具有正跨导，并且其中至少一个其它跨导体具有负跨导，其中跨导体一起提供正扩增，以及耦合到至少一个反馈跨导体的无源阻抗元件，其中跨导体和阻抗元件的跨导的尺寸被设计为使得在振荡频率范围内，在输入端的信号与信号之间存在给定的相位差输出。

14. 发明申请

US20050231289A1 Integrated amplifier, electronic communication unit with integrated amplifier and method for operating the electronic communication unit with an integrated amplifier 有权
标题翻译：集成放大器，具有集成放大器的电子通信单元和用于使用集成放大器操作电子通信单元的方法
公开(公告)号：US20050231289A1
公开(公告)日：2005-10-20
申请号：US11080341
申请日：2005-03-15
申请人： Christoph Kienmayer , Marc Tiebout
发明人： Christoph Kienmayer , Marc Tiebout
IPC分类号： H03F3/04 , H03F3/191 , H03F3/193 , H03G5/28 , H03J3/18
CPC分类号： H03F3/193 , H03F2200/294 , H03F2200/372 , H03J3/185
摘要： An integrated amplifier has a resonant circuit with a tuneable center frequency, in which the resonant circuit has at least one coil and at least one varactor for varying a resonant frequency of the resonant circuit.
摘要翻译：集成放大器具有可调中心频率的谐振电路，其中谐振电路具有至少一个线圈和至少一个用于改变谐振电路的谐振频率的变容二极管。

15. 发明授权

US06717503B2 Coil and coil system for integration into a micro-electronic circuit and microelectronic circuit 有权
标题翻译：线圈和线圈系统集成到微电子电路和微电子电路中
公开(公告)号：US06717503B2
公开(公告)日：2004-04-06
申请号：US10200422
申请日：2002-07-22
申请人： Jörg Berthold , Dieter Sewald , Marc Tiebout
发明人： Jörg Berthold , Dieter Sewald , Marc Tiebout
IPC分类号： H01F500
CPC分类号： H01L23/522 , H01F17/0033 , H01F27/362 , H01L23/5227 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The coil and coil system is provided for integration in a microelecronic circuit. The coil is placed inside an oxide layer of a chip, and the oxide layer is placed on the substrate surface of a substrate. The coil comprises one or more windings, whereby the winding(s) is/are formed by at least segments of two conductor tracks, which are each provided in spatially spaced-apart metalization levels, and by via-contacts which connect these conductor track(s) and/or conductor track segments. In order to be able to produce high-quality coils, a coil is produced with the largest possible coil cross-section, whereby a standard metalization, especially a standard metalization using copper, can, however, be used for producing the oil. To this end, the via contacts are formed from a stack of two ore more via elements arranged one above the other. Parts of the metalization levels can be located between the via elements.
摘要翻译：线圈和线圈系统被提供用于集成在微电子电路中。将线圈放置在芯片的氧化物层的内部，氧化物层被放置在基板的基板表面上。线圈包括一个或多个绕组，由此绕组由两个导体轨道的至少一部分形成，每个导体轨道分别设置在空间上间隔开的金属化水平，以及通过连接这些导体轨迹的通孔接触 s）和/或导体轨道段。为了能够生产高质量的线圈，制造线圈截面最大的线圈，由此可以使用标准金属化，特别是使用铜的标准金属化来生产油。为此，通孔触点由一个彼此排列的两个以上的通孔元件的叠层形成。金属化水平的一部分可以位于通孔元件之间。

16. 发明授权

US08619639B2 Power detector radio frequency multiplexer 有权
标题翻译：功率检波器射频多路复用器
公开(公告)号：US08619639B2
公开(公告)日：2013-12-31
申请号：US11774432
申请日：2007-07-06
申请人： Koen Mertens , Andreas Wiesbauer , Sven Derksen , Marc Tiebout
发明人： Koen Mertens , Andreas Wiesbauer , Sven Derksen , Marc Tiebout
IPC分类号： H04B7/00
CPC分类号： H03F3/24 , H03F3/68 , H04B2001/0416
摘要： A disclosed circuit arrangement may include a power detector. A multiplexer circuit may be coupled to the power detector. The multiplexer circuit may include at least two switching sections, one of the switching sections to pass a radio frequency (RF) signal generated based on a first modulation scheme to the power detector and another of the switching sections to pass an RF signal generated based on a second modulation scheme to the power detector.
摘要翻译：所公开的电路装置可以包括功率检测器。多路复用器电路可以耦合到功率检测器。多路复用器电路可以包括至少两个切换部分，其中一个切换部分将基于第一调制方案产生的射频（RF）信号传递到功率检测器和另一个切换部分，以通过基于功率检测器的第二调制方案。

17. 发明授权

US08242863B2 Active inductance for very high frequencies based on CMOS inverters 有权
标题翻译：基于CMOS逆变器的非常高频的有源电感
公开(公告)号：US08242863B2
公开(公告)日：2012-08-14
申请号：US12192793
申请日：2008-08-15
申请人： Oliver Schmitz , Sven Karsten Hampel , Fabian Beichert , Marc Tiebout
发明人： Oliver Schmitz , Sven Karsten Hampel , Fabian Beichert , Marc Tiebout
IPC分类号： H03H11/00
CPC分类号： H03H11/42 , H03H11/28
摘要： The present disclosure relates to techniques for simulating electrical inductance.
摘要翻译：本公开涉及用于模拟电感的技术。

18. 发明授权

US08149046B2 Biasing for transistor-based apparatuses and methods 有权
标题翻译：基于晶体管的装置和方法的偏置
公开(公告)号：US08149046B2
公开(公告)日：2012-04-03
申请号：US12388412
申请日：2009-02-18
申请人： Domagoj Siprak , Marc Tiebout , Stephan Henzler
发明人： Domagoj Siprak , Marc Tiebout , Stephan Henzler
IPC分类号： H03K3/01
CPC分类号： H03K19/00315 , H01L21/761 , H01L29/7833 , H03K2217/0018
摘要： The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise.
摘要翻译：本公开涉及构造和操作具有显着降低的闪烁噪声的晶体管或其它有源器件。

19. 发明授权

US07835121B2 Semiconductor device with ESD protection 有权
标题翻译：具有ESD保护的半导体器件
公开(公告)号：US07835121B2
公开(公告)日：2010-11-16
申请号：US11741469
申请日：2007-04-27
申请人： Marc Tiebout , Koen Mertens
发明人： Marc Tiebout , Koen Mertens
IPC分类号： H02H9/00
CPC分类号： H03F1/523 , H03F1/223 , H03F3/3081
摘要： Semiconductor device having an amplifier. In one embodiment, the amplifier includes a first amplifier path including a first input and a second amplifier path including a second input. An inductance having a connectable node is connected between the first and second inputs, the connectable node being symmetrically connected between the first and second inputs. At least one ESD protection structure is connected to the connectable node. In one embodiment, the semiconductor device is used in a communications device.
摘要翻译：具有放大器的半导体器件。在一个实施例中，放大器包括第一放大器路径，其包括第一输入和包括第二输入的第二放大器路径。具有可连接节点的电感连接在第一和第二输入之间，可连接节点对称地连接在第一和第二输入之间。至少一个ESD保护结构连接到可连接节点。在一个实施例中，半导体器件用于通信设备中。

20. 发明授权

US07592875B2 Injection-locked oscillator circuit 有权
标题翻译：注入锁定振荡电路
公开(公告)号：US07592875B2
公开(公告)日：2009-09-22
申请号：US10574151
申请日：2004-09-10
申请人： Judith Maget , Marc Tiebout
发明人： Judith Maget , Marc Tiebout
IPC分类号： H03K3/03 , H03B5/12
CPC分类号： H03L7/24 , H03B5/1212 , H03B5/1215 , H03B5/1228 , H03B5/1243 , H03B27/00 , H03K3/354
摘要： An ILO circuit has a plurality of oscillator stages which are coupled to one another by means of a “tank lock” coupling. The coupling leads to an improved synchronization of the individual oscillator stages and thus to a reduced phase noise. Any desired LC oscillator topology can be used, not just the topology with PMOS and NMOS transistors. It is also possible to use SOI transistors, that is to say transistors formed on an SOI substrate. The bulk terminals of the transistors may be coupled not only to a supply voltage but, for example, also to a center potential, a reference voltage source, to ground, in floating fashion and/or to the source terminal.
摘要翻译：国际劳工组织电路具有多个振荡器级，它们通过“卡锁”耦合彼此联接。耦合导致各个振荡器级的改进的同步，从而导致相位噪声的降低。可以使用任何所需的LC振荡器拓扑，而不仅仅是具有PMOS和NMOS晶体管的拓扑。也可以使用SOI晶体管，也就是说形成在SOI衬底上的晶体管。晶体管的体积端子可以不仅耦合到电源电压，而且例如也可以以浮动方式耦合到中心电位，参考电压源和/或源极端子。

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