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11. 发明授权

US07517815B2 Spin-on glass composition, method of preparing the spin-on glass composition and method of forming a porous silicon oxide layer using the spin-on glass composition 失效
标题翻译：旋涂玻璃组合物，旋涂玻璃组合物的制备方法和使用旋涂玻璃组合物形成多孔氧化硅层的方法
公开(公告)号：US07517815B2
公开(公告)日：2009-04-14
申请号：US11446152
申请日：2006-06-05
申请人： Jun-Hyun Cho , Jung-Sik Choi , Jung-Ho Lee , Mi-Ae Kim
发明人： Jun-Hyun Cho , Jung-Sik Choi , Jung-Ho Lee , Mi-Ae Kim
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C03C3/04 , C09D183/04 , H01L21/02203 , H01L21/02282 , H01L21/316
摘要： A spin-on glass composition includes a solvent, about 3 to about 20 percent by weight of a porogen, and about 3 to about 20 percent by weight of a silsesquioxane oligomer represented by formula (1), where, in the formula (1), Y1 and Y2 independently represent a hydrolyzable alkoxy group, R represents a lower alkyl group, and n and m independently represent an integer in a range of one to nine both inclusive.
摘要翻译：旋涂玻璃组合物包括约3至约20重量％的致孔剂和约3至约20重量％的由式（1）表示的倍半硅氧烷低聚物的溶剂，其中在式（1）中，，Y1和Y2独立地表示可水解烷氧基，R表示低级烷基，n和m独立地表示1〜9的整数。

12. 发明授权

US07427573B2 Forming composite metal oxide layer with hafnium oxide and titanium oxide 有权
标题翻译：用氧化铪和氧化钛形成复合金属氧化物层
公开(公告)号：US07427573B2
公开(公告)日：2008-09-23
申请号：US11328014
申请日：2006-01-09
申请人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Tae-Min Eom , Ji-Hyun Lee
发明人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Tae-Min Eom , Ji-Hyun Lee
IPC分类号： H01L29/78 , H01L21/31
CPC分类号： H01L21/022 , C23C16/403 , C23C16/405 , C23C16/45531 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/0228 , H01L21/28194 , H01L21/3142 , H01L21/31604 , H01L21/31616 , H01L21/31645 , H01L29/517
摘要： A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first thickness is such that the first metal oxide is allowed to move into the second layer and a value of the second thickness is such that the second metal oxide is allowed to move into the first layer to form a single-layered structure in which the first and second metal oxides are mixed.
摘要翻译：金属氧化物合金层包括包含第一金属氧化物并且具有第一厚度的第一层，以及形成在第一层上的第二层，第二层包括第二金属氧化物并具有第二厚度，其中第一层厚度使得第一金属氧化物被允许移动到第二层中，并且第二厚度的值使得允许第二金属氧化物移动到第一层中以形成单层结构，其中第一和第第二金属氧化物混合。

13. 发明申请

US20080168633A1 Elastic fastener and actuator module using the same 审中-公开
标题翻译：弹性紧固件和使用其的致动器模块
公开(公告)号：US20080168633A1
公开(公告)日：2008-07-17
申请号：US12007611
申请日：2008-01-14
申请人： Byoung-Soo Kim , Jung-Ho Lee
发明人： Byoung-Soo Kim , Jung-Ho Lee
IPC分类号： A44B17/00 , F16B5/00
CPC分类号： F16B5/0642 , F16B5/0657 , Y10T24/45 , Y10T403/75
摘要： An elastic fastener has developed to be assembled and disassembled easily, even without the use of a separate tool, that can be firmly and repeatedly coupled, and an actuator module using the same. The elastic fastener includes a hollow socket adapted to be elastically inserted into insertion holes formed on joint members, and a fixing pin coupled to a hollow portion of the hollow socket. The actuator module includes a housing including a first lateral plate having at least one insertion hole for inserting an elastic fastener, a second lateral plate positioned to face the first lateral plate and provided with at least one insertion hole of an identical shape as the insertion hole of the first lateral plate, and two lateral surfaces positioned between both ends of the first and second lateral plates while facing each other; a first connection member coupled to a driving shaft of an actuator contained in the housing via the first lateral plate, the first connection member having at least one insertion hole of an identical shape as the insertion holes of the first and second lateral plates, the first connection member having a flat plate shape; and an elastic fastener including a hollow socket adapted to be elastically inserted into the insertion hole formed in the first connection member and a fixing pin coupled to the hollow portion of the hollow socket.
摘要翻译：弹性紧固件已经开发成易于组装和拆卸，即使不使用可以牢固且重复地联接的单独的工具，以及使用该紧固件的致动器模块。弹性紧固件包括适于被弹性地插入到形成在接合构件上的插入孔中的中空插座，以及联接到中空插座的中空部分的固定销。致动器模块包括壳体，该壳体包括具有用于插入弹性紧固件的至少一个插入孔的第一侧板，与第一侧板相对设置的第二侧板，并且设置有与插入孔相同形状的至少一个插入孔并且两个侧表面位于第一和第二侧板的两端之间，同时彼此面对; 第一连接构件，其经由第一侧板联接到容纳在壳体中的致动器的驱动轴，第一连接构件具有至少一个与第一和第二侧板的插入孔相同形状的插入孔，第一连接构件具有平板形状的连接构件; 以及弹性紧固件，其包括适于被弹性地插入形成在第一连接构件中的插入孔中的中空插座和连接到中空插座的中空部分的固定销。

14. 发明申请

US20080102897A1 Device And Method For Remotely Measuring And Monitoring Antenna System Using Mobile Terminal 有权
标题翻译：使用移动终端远程测量和监测天线系统的设备和方法
公开(公告)号：US20080102897A1
公开(公告)日：2008-05-01
申请号：US10586106
申请日：2005-01-14
申请人： Jae-Sub Song , Jin-Ho Choi , Jae-Kon Kim , Jung-Ho Lee
发明人： Jae-Sub Song , Jin-Ho Choi , Jae-Kon Kim , Jung-Ho Lee
IPC分类号： H04M1/00
CPC分类号： G01R27/06 , G01R29/10 , H04B17/103 , H04B17/18 , H04B17/40
摘要： An antenna system measurer (110a, 110b, 110c) for a repeater and a base station (10) measures powers of a progressive wave and a reflected wave of a transmit/receive antenna, and transmits measured results to a monitoring server (200) in a radio data format such as an SMS message. The monitoring server (200) receives the radio data, identifies a repeater and a base station from sender information of the radio data, and calculates a VSWR based on the measured values. The VSWR is modified based on characteristics of the base station such as length and substance of feeders from a base station identifier corresponding to the sender information. According to the present invention, the remote antenna system is monitored in real-time without visits or installation fees, and a plurality of repeaters and base stations is managed in a combined manner.
摘要翻译：用于中继器和基站（10）的天线系统测量器（110a，110b，110c）测量发射/接收天线的逐行波和反射波的功率，并将测量结果发送到监视服务器 200）以诸如SMS消息的无线电数据格式。监视服务器（200）从无线电数据的发送者信息接收无线电数据，识别中继器和基站，并且基于测量值来计算VSWR。基于来自与发送者信息对应的基站标识符的馈送装置的长度和实质，基于基站的特性修改VSWR。根据本发明，远程天线系统被实时监控，无需访问或安装费用，并且以组合的方式管理多个中继器和基站。

15. 发明授权

US07250379B2 Method of forming metal oxide using an atomic layer deposition process 有权
标题翻译：使用原子层沉积工艺形成金属氧化物的方法
公开(公告)号：US07250379B2
公开(公告)日：2007-07-31
申请号：US11144574
申请日：2005-06-03
申请人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Sang-Mun Chon
发明人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Sang-Mun Chon
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02186 , H01L21/02274 , H01L21/3141 , H01L21/31604 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate, M[L1]x[L2]y where M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.
摘要翻译：在形成金属氧化物的方法中，将由以下化学式表示的有机金属化合物引入室中以将有机金属化合物化学吸附到基材上，<？在线配方描述=“在线配方”末端 =“lead”？> M [L1] x [L2] y <？in-line-formula description =“In-line Formulas”end =“tail”？>其中M表示金属，L1和L2分别表示第一和第二配体。此外，x和y独立地为整数，（x + y）的值为3〜5。将含氧化合物引入室中以形成金属氧化物。通过使含氧化合物的氧与金属反应并将配体与金属分离而形成金属氧化物。因此，可以通过原子层沉积工艺使用有机金属化合物形成具有优异的台阶覆盖率和高介电常数的金属氧化物。

16. 发明申请

US20070071893A1 Organic aluminum precursor and method of manufacturing a metal wiring using the same 失效
标题翻译：有机铝前体及其制造方法
公开(公告)号：US20070071893A1
公开(公告)日：2007-03-29
申请号：US11524295
申请日：2006-09-21
申请人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
发明人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
IPC分类号： C23C16/00 , C07F5/06
CPC分类号： C07F5/066 , C07F5/062 , C23C16/20
摘要： In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae: wherein R1, R2, R3, R4 and R5 are independently H or a C1-C5 alkyl functional group, n is an integer of 1 to 5, x is 1 or 2, and y is 0 or 1, or wherein R1, R2, R3, R4 R5, R6, R7 and R8 are independently H or a C1-C5 alkyl functional group, and Y is boron.
摘要翻译：在制造金属布线的方法中，将包含铝作为中心金属的有机铝前体施加到基板上。施加到基材上的有机铝前体热分解形成铝。铝沉积在基板上以形成具有低电阻的铝布线。有机铝前体包括根据以下化学式之一的化学结构：其中R 1，R 2，R 3，R 3， R 4和R 5独立地是H或C 1 -C 5烷基官能团，n是整数 1至5，x为1或2，y为0或1，或其中R 1，R 2，R 3，R R 5，R 6，R 7和R 8独立地是H 或C 1 -C 5烷基官能团，Y是硼。

17. 发明申请

US20070008646A1 Seek control method of hard disk drive, recording medium storing method and hard disk drive adopting method 失效
标题翻译：寻求硬盘驱动器的控制方法，记录介质存储方法和硬盘驱动器采用方法
公开(公告)号：US20070008646A1
公开(公告)日：2007-01-11
申请号：US11480443
申请日：2006-07-05
申请人： Jung-Ho Lee , Da-Woon Chung , Dong-Wook Lee , Byoung-Kul Ji
发明人： Jung-Ho Lee , Da-Woon Chung , Dong-Wook Lee , Byoung-Kul Ji
IPC分类号： G11B5/596 , G11B21/02
CPC分类号： G11B5/5565 , G11B5/5547
摘要： The present invention relates to a hard disk drive performing a seek control method using a multi-sinusoidal wave acceleration profile, where the seek control method is capable of coping with a variation in a voice coil motor driving current due to variances in a peripheral environment. The seek control method of the present invention includes: calculating a seek time scaling (STC) related to variations in a voice coil motor (VCM) driving current due to variation in a peripheral environment; calculating an acceleration distance ratio (ALR) of an acceleration distance to a maximum seek distance without a coast mode according to the STC; calculating position profiles in an acceleration mode, the coast mode and a deceleration mode, respectively, using both the STC and the ALR; and performing a seek operation by generating the VCM driving current according to the position profiles and applying the VCM driving current to a VCM.
摘要翻译：本发明涉及一种执行使用多正弦波加速度分布的搜索控制方法的硬盘驱动器，其中搜索控制方法能够应对由于周边环境的变化而导致的音圈马达驱动电流的变化。本发明的搜索控制方法包括：计算由于周边环境的变化而导致的音圈电机（VCM）的变化相关的寻道时间缩放（STC）的驱动电流; 根据STC计算加速距离与没有惯性模式的最大寻道距离的加速距离比（ALR）; 使用STC和ALR两者分别在加速模式，惯性模式和减速模式下计算位置分布; 并通过根据位置分布生成VCM驱动电流并将VCM驱动电流施加到VCM来执行寻道操作。

18. 发明申请

US20050240033A1 Hydrogenation catalyst, preparation thereof, and method for the preparation of gamma-butyrolactone from maleic anhydride using the catalyst 失效
标题翻译：氢化催化剂及其制备方法以及使用催化剂从马来酸酐制备γ-丁内酯的方法
公开(公告)号：US20050240033A1
公开(公告)日：2005-10-27
申请号：US10512041
申请日：2003-04-18
申请人： Jung-Ho Lee , Hyung-Rok Kim , Yo-Han Han , Suk-Jong Jeong , Nak-Mo Choi , Hang-Soo Woo , In-Ki Kim
发明人： Jung-Ho Lee , Hyung-Rok Kim , Yo-Han Han , Suk-Jong Jeong , Nak-Mo Choi , Hang-Soo Woo , In-Ki Kim
IPC分类号： C07D307/33 , B01J23/00 , B01J23/80 , B01J23/889 , B01J37/03 , B01J37/04 , B01J37/10 , C07B61/00 , C07D305/12
CPC分类号： B01J37/036 , B01J23/002 , B01J23/8892 , B01J2523/00 , B01J2523/17 , B01J2523/27 , B01J2523/41 , B01J2523/72
摘要： The present invention relates to a hydrogenation catalyst represented by the following formula 1, a method for the preparation thereof, and a method for preparing gamma-butyrolactone using this catalyst. The method for preparing gamma-butyrolactone from maleic anhydride using the catalyst of the invention prepared by stabilizing the precursor particles of copper oxide, zinc oxide, and manganese oxide with a silica exhibits high selectivity, high yield, and high productivity under the operation conditions of a low molar ratio of hydrogen with regard to the reactants, and enables the preparation of gamma-butyrolactone from maleic anhydride with long-term stability without requiring frequent re-activation of the catalyst: Formula (1) CuO(a)ZnO(b)MnO2(c)SiO2(d) wherein a, b, c, and d are represented on the basis of weight, wherein a is 20 to 90, b is 0.01 to 10, c is 0.01 to 5, and d is 5 to 50.
摘要翻译：本发明涉及由下式1表示的氢化催化剂，其制备方法和使用该催化剂制备γ-丁内酯的方法。使用本发明的催化剂由马来酸酐制备γ-丁内酯的方法，其通过用二氧化硅稳定氧化铜，氧化锌和氧化锰的前体颗粒制备，在操作条件下表现出高选择性，高产率和高生产率氢的相对于反应物的摩尔比低，能够长时间稳定地从马来酸酐制备γ-丁内酯，而不需要频繁地重新催化催化剂：式（1）CuO（a）ZnO（b） MnO 2（c）SiO 2（d）其中a，b，c和d以重量为基准表示，其中a为20至90，b为 0.01〜10，c为0.01〜5，d为5〜50。

19. 发明授权

US06940566B1 Liquid crystal displays including organic passivation layer contacting a portion of the semiconductor layer between source and drain regions 失效
标题翻译：液晶显示器包括与源极和漏极区域之间的半导体层的一部分接触的有机钝化层
公开(公告)号：US06940566B1
公开(公告)日：2005-09-06
申请号：US10676667
申请日：2003-10-01
申请人： Soo-Guy Rho , Jung-Ho Lee
发明人： Soo-Guy Rho , Jung-Ho Lee
IPC分类号： G02F1/1333 , G02F1/1362 , H01L29/04
CPC分类号： G02F1/136213 , G02F1/136209 , G02F1/136227 , G02F2001/133357
摘要： A passivation layer is formed by coating a flowable insulating material on the substrate where a thin film transistor and a storage capacitor electrode, and a pixel electrode is formed on the passivation layer. A portion of the passivation layer is etched using the pixel electrode as a mask to make a groove on the thin film transistor, and then a black matrix is formed by filling an organic black photoresist in the groove. To increase the storage capacitance, a portion of the passivation layer is removed or to form a metal pattern on the storage capacitor electrode. A flowable insulating material is used as a gate insulating layer to planarize the substrate. In this case of the etch stopper type thin film transistor, a photo definable material is used as the etch stopper layer to reduce the parasitic capacitance between the gate electrode and the drain electrode.
摘要翻译：通过在基板上涂布可流动的绝缘材料形成钝化层，在钝化层上形成薄膜晶体管和存储电容器电极以及像素电极。使用像素电极作为掩模蚀刻钝化层的一部分，以在薄膜晶体管上形成沟槽，然后通过在沟槽中填充有机黑色光致抗蚀剂形成黑色矩阵。为了增加存储电容，去除钝化层的一部分或在存储电容器电极上形成金属图案。使用可流动绝缘材料作为栅极绝缘层来平坦化基板。在蚀刻停止型薄膜晶体管的这种情况下，使用光可定义材料作为蚀刻停止层，以减小栅电极和漏电极之间的寄生电容。

20. 发明授权

US06597415B2 Thin film transistor substrates for liquid crystal displays including thinner passivation layer on storage capacitor electrode than other regions 有权
标题翻译：用于液晶显示器的薄膜晶体管衬底包括具有不均匀厚度的钝化层
公开(公告)号：US06597415B2
公开(公告)日：2003-07-22
申请号：US09800700
申请日：2001-03-07
申请人： Soo-Guy Rho , Jung-Ho Lee
发明人： Soo-Guy Rho , Jung-Ho Lee
IPC分类号： G02F1136
CPC分类号： G02F1/133345 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/133357 , H01L27/3265
摘要： A passivation layer is formed by coating a flowable insulating material on the substrate where a thin film transistor and a storage capacitor electrode, and a pixel electrode is formed on the passivation layer. A portion of the passivation layer is etched using the pixel electrode as a mask to make a groove on the thin film transistor, and then a black matrix is formed by filling an organic black photoresist in the groove. To increase the storage capacitance, a portion of the passivation layer is removed or to form a metal pattern on the storage capacitor electrode. A flowable insulating material is used as a gate insulating layer to planarize the substrate. In the case of the etch stopper type thin film transistor, a photo definable material is used as the etch stopper layer to reduce the parasitic capacitance between the gate electrode and the drain electrode.
摘要翻译：通过在基板上涂布可流动的绝缘材料形成钝化层，在钝化层上形成薄膜晶体管和存储电容器电极以及像素电极。使用像素电极作为掩模蚀刻钝化层的一部分，以在薄膜晶体管上形成沟槽，然后通过在沟槽中填充有机黑色光致抗蚀剂形成黑色矩阵。为了增加存储电容，去除钝化层的一部分或在存储电容器电极上形成金属图案。使用可流动绝缘材料作为栅极绝缘层来平坦化基板。在蚀刻停止型薄膜晶体管的情况下，使用光可定义材料作为蚀刻停止层，以减小栅电极和漏电极之间的寄生电容。

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