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11. 发明授权

US06193900B1 Method for sensing etch of distributed bragg reflector in real time 有权
标题翻译：用于实时感测分布式布拉格反射器的蚀刻的方法
公开(公告)号：US06193900B1
公开(公告)日：2001-02-27
申请号：US09143484
申请日：1998-08-28
申请人： Jong Hyeob Baek , Bun Lee
发明人： Jong Hyeob Baek , Bun Lee
IPC分类号： B24B4900
CPC分类号： G02B5/1857 , G02B2006/12104 , G02B2006/12176
摘要： A method for sensing the etch of distributed Bragg reflector (called DBR below) in a real time is provided. More particularly, a method for searching informations of etch speed and etch stop step by monitoring the etching procedure in the wet etching method which is a post-process in the semiconductor device manufacturing process. A laser beam is irradiated on the sample sunk in the etching solution during the etching process is on the way. Then, computer measures the intensity of laser beam reflected on the sample, analyzes the periodic signals occurred by its interference and obtains the etching speed of the sample in a real time. The laser provides thermal energy on the sample during wet etching and occurs irregular etching speed on a beam contacting part of sample and non contacting part. Uniform etching speed can be obtained in the entire sample using a convex lens having a suitable focal distance.
摘要翻译：提供了用于实时感测分布式布拉格反射器（以下称为DBR）的蚀刻的方法。更具体地，涉及一种用于通过在半导体器件制造过程中通过监视作为后处理的湿式蚀刻方法中的蚀刻步骤来搜索蚀刻速度和蚀刻停止步骤的信息的方法。在蚀刻过程中，激光束被照射在蚀刻溶液中沉没的样品上。然后，计算机测量样品反射的激光束的强度，分析其干涉产生的周期信号，实时获取样品的蚀刻速度。激光在湿蚀刻期间在样品上提供热能，并在样品和非接触部分的光束接触部分上发生不规则的蚀刻速度。使用具有合适焦距的凸透镜可以在整个样品中获得均匀的蚀刻速度。

12. 发明授权

US5855669A Method for fabricating grating coupler 失效
标题翻译：光栅耦合器的制作方法
公开(公告)号：US5855669A
公开(公告)日：1999-01-05
申请号：US842872
申请日：1997-04-17
申请人： Jong-Hyeob Baek , Bun Lee
发明人： Jong-Hyeob Baek , Bun Lee
IPC分类号： G02B6/293 , C30B25/02 , G02B5/18 , G02B6/122 , G02B6/124 , G02B6/34 , H01L21/203 , C30B25/16
CPC分类号： C30B25/02 , C30B29/40 , G02B6/124 , G02B6/34
摘要： A grating coupler is formed by growing an optical waveguide layer on a substrate by an epitaxial growing process such as a metalorganic chemical vapor deposition and a molecular beam deposition. The optical waveguide layer has a surface on which a cross-hatch pattern serving as the grating is continuously formed. The optical waveguide layer is formed with a material having a reflective index greater than a reflective index of the substrate or an atmosphere. Specifically, the substrate is formed with GaAs and the optical waveguide layer is formed with InGaAs. Further, the substrate is an on-substrate having an orientation coinciding with a �100! plane, so as to form the optical waveguide layer having continuous cross-hatch patterns on the surface thereof. The spacing between the cross-hatch patterns can be varied according to variation of a growth temperature of the optical waveguide layer.
摘要翻译：通过外延生长工艺如金属有机化学气相沉积和分子束沉积在衬底上生长光波导层来形成光栅耦合器。光波导层具有连续形成用作光栅的交叉影线图案的表面。光波导层由具有大于基板的反射率或大气的反射率的材料形成。具体地，基板由GaAs形成，并且光波导层由InGaAs形成。此外，基板是具有与[100]面重合的取向的基板，从而在其表面上形成具有连续交叉图案的光波导层。交叉线图案之间的间隔可以根据光波导层的生长温度的变化而变化。

13. 发明申请

US20060135743A1 Bimetallic zinc complex and process of producing polycarbonate using the same as polymerization catalyst 有权
标题翻译：双金属锌络合物和使用与聚合催化剂相同的聚碳酸酯制造方法
公开(公告)号：US20060135743A1
公开(公告)日：2006-06-22
申请号：US11088806
申请日：2005-03-25
申请人： Young Park , Hyo Lee , Young Won , Bun Lee , Heon Kwon , Soo Lee
发明人： Young Park , Hyo Lee , Young Won , Bun Lee , Heon Kwon , Soo Lee
IPC分类号： C08G59/00
CPC分类号： C08G64/34 , C07F3/003
摘要： Provided are a bimetallic zinc complex and a method of producing polycarbonate, including polymerizing an epoxy compound and carbon dioxide using the bimetallic zinc complex. The bimetallic zinc complex according to the present invention has a distance between zinc-zinc atoms, which is maintained in a limited range regardless of its concentration in a reaction medium for the polymerization. Thus, the bimetallic zinc complex can have a polymerization activity even at a high ratio of monomer/catalyst, thereby reducing a catalyst amount to be used, which is economically advantageous. Further, the bimetallic zinc complex can produce a high molecular weight polycarbonate.
摘要翻译：提供双金属锌络合物和使用双金属锌络合物聚合环氧化合物和二氧化碳的聚碳酸酯的制造方法。根据本发明的双金属锌络合物具有锌 - 锌原子之间的距离，其保持在有限范围内，而与聚合反应介质中的浓度无关。因此，即使在单体/催化剂的高比例下，双金属锌络合物也可以具有聚合活性，从而减少了所用的催化剂量，这在经济上是有利的。此外，双金属锌络合物可以生产高分子量聚碳酸酯。

14. 发明授权

US06625361B2 Method for forming two thin conductive films isolated electrically from each other on a fiber 失效
公开(公告)号：US06625361B2
公开(公告)日：2003-09-23
申请号：US10085371
申请日：2002-02-27
申请人： Sahng-gi Park , Jong-bae Kim , Doo-hee Cho , Yong-gyu Choi , Kyong-hon Kim , Bun Lee
发明人： Sahng-gi Park , Jong-bae Kim , Doo-hee Cho , Yong-gyu Choi , Kyong-hon Kim , Bun Lee
IPC分类号： G02B600
CPC分类号： G02F1/3558 , C03C25/1063 , C03C25/22 , C03C25/52 , G02B6/02 , G02B6/2826 , G02F1/0115
摘要： A method for forming two conductive films isolated electrically from each other on the surface of a fiber is provided. According to the method, a fiber is attached into the grooves on a silicon substrate using photoresist as glue. A photoresist pattern for a conductive film on the surface of the fiber is formed by a photolithography process. After wet-etching some amount of the fiber on the patterned area, which is needed for lifting off a metal film deposited on the unnecessary area, a metal film is deposited over whole area of the wafer. Removing photo-resist by a heated stripper solution leaves a metal film only on the patterned area of the fiber and detaches the fibers from the grooves of the wafer The second metal film on the other side of the fiber can be formed by the same procedures as the first metal film except that the deposited surface of the fiber must be attached to the grooves upside down. The poled fiber using two conductive films can be applied to manufacture elements used in opto-electronic and fiber communication devices such as a modulator, a tunable filter and a switch, an electric field sensor, and a nonlinear fiber optics device such as a frequency converter, a dispersion compensator.

15. 发明申请

US20070010638A1 Transition metal complexes, catalyst compositions containing the same, and olefin polymerization using the catalyst compositions 有权
标题翻译：过渡金属络合物，含有它们的催化剂组合物和使用催化剂组合物的烯烃聚合
公开(公告)号：US20070010638A1
公开(公告)日：2007-01-11
申请号：US11483754
申请日：2006-07-10
申请人： Choong Lee , Eun Jung Lee , Seungwhan Jung , Jong Ha , Beomdoo Seo , Bun Lee , Ui Joung , Dae Joe
发明人： Choong Lee , Eun Jung Lee , Seungwhan Jung , Jong Ha , Beomdoo Seo , Bun Lee , Ui Joung , Dae Joe
IPC分类号： C07F7/28
CPC分类号： C07F17/00 , C08F2420/02 , Y10S526/943
摘要： Provided are a novel transition metal complex where a monocyclopentadienyl ligand to which an amine-based group is introduced is coordinated, a method of synthesizing the same, and olefin polymerization using the transition metal complex In the novel transition metal complex, an imino phenyl group is not cross-linked to a metal atom and directly introduced to a cyclopentadiene (Cp) ring. The catalyst composition including the transition metal compound is used to obtain a polyolefin copolymer having a very low density less than 0.910 g/cc.
摘要翻译：提供了一种新的过渡金属络合物，其中引入了胺基的单环戊二烯基配体被配位，其合成方法和使用过渡金属络合物的烯烃聚合在新的过渡金属络合物中，亚氨基苯基是不与金属原子交联并直接引入环戊二烯（Cp）环。包括过渡金属化合物的催化剂组合物用于获得密度小于0.910g / cc的非常低的聚烯烃共聚物。

16. 发明申请

US20070010637A1 Transition metal complexes, catalyst compositions containing the same, and olefin polymerization using the catalyst compositions 有权
标题翻译：过渡金属络合物，含有它们的催化剂组合物和使用催化剂组合物的烯烃聚合
公开(公告)号：US20070010637A1
公开(公告)日：2007-01-11
申请号：US11483514
申请日：2006-07-10
申请人： Choong Lee , Eun Lee , Seungwhan Jung , Jong Ha , Beomdoo Seo , Bun Lee , Ui Joung , Dae Joe
发明人： Choong Lee , Eun Lee , Seungwhan Jung , Jong Ha , Beomdoo Seo , Bun Lee , Ui Joung , Dae Joe
IPC分类号： C08F4/64
CPC分类号： C07F17/02 , C08F4/65908 , C08F4/65912 , C08F10/00 , C08F210/16 , C08F2420/02 , C08F4/6592 , C08F210/14 , C08F2500/12
摘要： Provided are a novel transition metal complex where a monocyclopentadienyl ligand to which an amido or alcoxy group is introduced is coordinated, a method of synthesizing the same, and olefin polymerization using the transition metal complex. Compared to a conventional transition metal complex having a silicon bridge and an oxido ligand, the transition metal complex has a phenylene bridge, so that a monomer easily approaches the transition metal complex in terms of structure and a pentagon ring structure of the transition metal complex is stably maintained. The catalyst composition including the transition metal complex is used to synthesize a polyolefin copolymer having a very low density less than 0.910 g/cc.
摘要翻译：提供一种新颖的过渡金属络合物，其中引入了酰胺基或烷氧基的单环戊二烯基配位体，其合成方法和使用过渡金属络合物的烯烃聚合。与具有硅桥和氧化配体的常规过渡金属络合物相比，过渡金属络合物具有亚苯基桥，使得单体在结构方面容易接近过渡金属络合物，并且过渡金属络合物的五环结构是稳定维持。包括过渡金属络合物的催化剂组合物用于合成具有小于0.910g / cc的非常低密度的聚烯烃共聚物。

17. 发明申请

US20050080296A1 Method of preparing fulvene compounds and method of preparing ansa-metallocene compounds using the compounds 失效
标题翻译：制备富烯化合物的方法和使用该化合物制备硫杂茂金属化合物的方法
公开(公告)号：US20050080296A1
公开(公告)日：2005-04-14
申请号：US10962482
申请日：2004-10-13
申请人： Young Park , Hyosun Lee , Sung Hong , Kwang Song , Boong Jeong , Dae Nam , Hye Jung , Bun Lee , Young Won
发明人： Young Park , Hyosun Lee , Sung Hong , Kwang Song , Boong Jeong , Dae Nam , Hye Jung , Bun Lee , Young Won
IPC分类号： C07C13/15 , C07C1/20 , C07C43/162 , C07C43/192 , C07F17/00 , C08F4/44 , C07C45/68 , C07F1/02
CPC分类号： C07F17/00 , C07C1/20 , C07C43/162 , C07C43/192 , C07C2601/10 , C07C13/15
摘要： There are provided a method of simply preparing a 1,4,6-substituted, 1,4-substituted, 1,6-substituted, or 1-substituted fulvene compound, the intermediates of the fulvene compound, and a method of preparing an ansa-metallocene compound in which two cyclopentadienyl ligands are bridged by one carbon and there are substituents only at positions adjacent to the bridging point of a cyclopentadienyl ligand, using the fulvene compound.
摘要翻译：提供了简单地制备1,4,6-取代的，1,4-取代的，1,6-取代的或1-取代的富烯化合物，富烯化合物的中间体的方法和制备ansa的方法茂金属化合物，其中两个环戊二烯基配位体被一个碳桥连，并且仅在邻近环戊二烯基配体的桥连点的位置处使用富烯化合物。

18. 发明申请

US20060069221A1 Ansa-metallocene compound, process of preparing the same, and process of preparing polyolefin using the same 有权
公开(公告)号：US20060069221A1
公开(公告)日：2006-03-30
申请号：US11234504
申请日：2005-09-23
申请人： Choong Lee , Jong Ha , Seung Jung , Eunjung Lee , Beomdoo Seo , Young Park , Hyosun Lee , Sung Hong , Young Won , Bun Lee
发明人： Choong Lee , Jong Ha , Seung Jung , Eunjung Lee , Beomdoo Seo , Young Park , Hyosun Lee , Sung Hong , Young Won , Bun Lee
IPC分类号： C08F4/72 , B01J31/00 , C07F17/00
CPC分类号： C07F17/00 , Y10S526/941 , Y10S526/943
摘要： Provided are a bridged metallocene compound particularly suitable for copolymerization of ethylene and alpha-olefin or cyclic olefin, a process of preparing the metallocene compound, and a process of preparing polyolefin using the metallocene compound. The bridged metallocene compound has low steric hindrance and good (co)polymerization activity, and thus, exhibits good activity in copolymerization of ethylene and alpha-olefin such as 1-hexene or 1-octene. Furthermore, the process of preparing the bridged metallocene compound is simplified, and thus, suitable for mass production.

19. 发明授权

US5976903A Method for manufacturing tunable laser 失效
标题翻译：可调激光器制造方法
公开(公告)号：US5976903A
公开(公告)日：1999-11-02
申请号：US020711
申请日：1998-02-09
申请人： Bun Lee , Jong Hyub Baek
发明人： Bun Lee , Jong Hyub Baek
IPC分类号： H01S5/00 , H01S3/02 , H01S5/183 , H01L21/00
CPC分类号： H01S5/18361 , B82Y20/00 , H01S2304/04 , H01S5/18358 , H01S5/2068 , H01S5/3206 , H01S5/34306
摘要： A method for making a surface-type semiconductor laser specially devised to keep the stability of the wavelength at the next generation laser for WDM, which does not cause a raising characteristic variation with time because the laser wavelength of the individual device can be controlled easily and exactly as required and the devices in which the wavelength control have completed is stable in their material properties. The surface-type semiconductor laser is made by growing the cladding layer within the active layer at a low temperature, growing the upper and the underlying superlattice mirror layers and the quantum well structure within the active layer at a high temperature and then sintering the structure thus formed at a high temperature.
摘要翻译：专门设计用于保持WDM的下一代激光器的波长稳定性的表面型半导体激光器的方法，由于可以容易地控制各个器件的激光波长，所以不会引起随时间的特性变化的升高，完全根据需要，波长控制完成的装置在其材料性质上是稳定的。表面型半导体激光器是通过在低温下生长活性层内的包覆层，在高温下使有源层内的上层和下层超晶格层和量子阱结构生长而形成的，然后烧结该结构在高温下形成。

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