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11. 发明授权

US5977581A Dielectric material and process to create same 失效
标题翻译：介电材料和工艺相同
公开(公告)号：US5977581A
公开(公告)日：1999-11-02
申请号：US810438
申请日：1997-03-04
申请人： Randhir P.S. Thakur , Gurtej S. Sandhu
发明人： Randhir P.S. Thakur , Gurtej S. Sandhu
IPC分类号： H01L21/02 , H01L21/8242 , H01L29/72
CPC分类号： H01L27/1085 , H01L28/40
摘要： An embodiment of the present invention describes a method for forming a dielectric material for a storage capacitor during fabrication of a semiconductor memory device, by: cleaning impurities from the surface of a conductive plate of the storage capacitor; forming a nitride film over the conductive plate's cleaned surface; forming a metal silicide film over the nitride film; and oxidizing the metal silicide film by rapid thermal oxide (RTO) processing. A resulting structure is a capacitor having a dielectric material that is an oxidized metal silicide film.
摘要翻译：本发明的一个实施例描述了一种用于在制造半导体存储器件期间形成用于存储电容器的电介质材料的方法，该方法是：从存储电容器的导电板的表面清除杂质; 在导电板的清洁表面上形成氮化物膜; 在氮化膜上形成金属硅化物膜; 并通过快速热氧化（RTO）处理氧化金属硅化物膜。所得结构是具有作为氧化金属硅化物膜的电介质材料的电容器。

12. 发明授权

US5963833A Method for cleaning semiconductor wafers and 失效
公开(公告)号：US5963833A
公开(公告)日：1999-10-05
申请号：US831611
申请日：1997-04-10
申请人： Randhir P.S. Thakur
发明人： Randhir P.S. Thakur
IPC分类号： C23C16/44 , H01L21/44
CPC分类号： C23C16/4405 , Y10S438/905 , Y10S438/906
摘要： A low temperature in-situ precleaning process for a semiconductor surface is disclosed. Ambient reactant gases, such as NF.sub.3 and GeH.sub.4, having a partial pressure of between approximately 10.sup.-8 and 700 Torr, are pulsed in a batch furnace at temperatures in the approximate range of 250 to 950 degrees Celsius and pressure in the approximate range of 4.times.10.sup.3 to 20.times.10.sup.3 Torr. This forms material on the surface that easily vaporizes in that temperature and pressure range, providing a clean surface for formation of the next layer. A similar in-situ cleaning process is performed at temperature ranges of between approximately 300 to 1,000 degrees Celsius for the equipment utilized in processing semiconductor substrates.

13. 发明授权

US5937294A Method for making a container capacitor with increased surface area 失效
标题翻译：制造具有增加的表面积的容器电容器的方法
公开(公告)号：US5937294A
公开(公告)日：1999-08-10
申请号：US884371
申请日：1997-06-27
申请人： Gurtej Singh Sandhu , Randhir P.S. Thakur
发明人： Gurtej Singh Sandhu , Randhir P.S. Thakur
IPC分类号： H01L21/02 , H01L21/8242
CPC分类号： H01L27/10852 , H01L28/82 , H01L28/84 , H01L28/90
摘要： A method of forming a polysilicon electrode having at least one roughened surface is performed by roughening a template layer to form a roughened template layer. A layer of polysilicon is next deposited on top of the roughened template layer. The polysilicon electrode is then formed by etching away the roughened template layer, and thereby exposing a roughened surface on the polysilicon electrode.
摘要翻译：通过粗糙化模板层来形成具有至少一个粗糙表面的多晶硅电极的方法，以形成粗糙化的模板层。接下来沉积多晶硅层在粗糙化的模板层的顶部。然后通过蚀刻掉粗糙化的模板层形成多晶硅电极，从而使多晶硅电极上的粗糙表面暴露。

14. 发明授权

US5863327A Apparatus for forming materials 失效
标题翻译：用于形成材料的设备
公开(公告)号：US5863327A
公开(公告)日：1999-01-26
申请号：US795170
申请日：1997-02-10
申请人： Randhir P.S. Thakur
发明人： Randhir P.S. Thakur
IPC分类号： C23C16/452 , C23C16/48 , H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/6715 , C23C16/452 , C23C16/482 , C23C16/483 , H01L21/67115
摘要： A semiconductor fabrication apparatus and methods for processing materials on a semiconductor wafer are disclosed. The fabrication apparatus is a processing chamber comprising: an ultraviolet radiation source and an infrared radiation source, the radiation sources symmetrically arranged such that radiation is substantially uniform throughout the chamber and the radiation sources being capable of being used as a film deposition radiation source or a film annealing radiation source or both; an ultraviolet radiation sensor and an infrared radiation sensor to provide a feedback loop to the ultraviolet radiation source and to the infrared radiation source, respectively, so that a desired level of ultraviolet radiation and infrared radiation is maintained inside the chamber. An exemplary method to utilize the semiconductor fabrication apparatus comprises processing a material on a semiconductor assembly during semiconductor fabrication, by the steps of: precleaning a semiconductor assembly in ultraviolet radiation, the step of precleaning performed prior to the step of forming; forming a film in ultraviolet radiation and infrared radiation; annealing the film ultraviolet light radiation and infrared radiation; wherein the ultraviolet radiation and the infrared radiation are supplied by independently operable ultraviolet and infrared radiation sources within the same processing chamber.
摘要翻译：公开了一种用于在半导体晶片上处理材料的半导体制造装置和方法。该制造装置是一种处理室，包括：紫外线辐射源和红外线辐射源，辐射源对称地布置成使得辐射在整个腔室中基本均匀，并且辐射源能够用作成膜辐射源或膜退火辐射源或两者; 紫外线辐射传感器和红外辐射传感器，以分别向紫外线辐射源和红外线辐射源提供反馈回路，使得在腔室内保持期望的紫外线辐射和红外辐射水平。利用半导体制造装置的示例性方法包括：在半导体制造期间，通过以下步骤处理半导体组件上的材料：在紫外线辐射下预清洗半导体组件，在成形步骤之前执行预清洗步骤; 在紫外线和红外辐射下形成膜; 退火膜紫外光辐射和红外辐射; 其中紫外线辐射和红外辐射由相同处理室内的独立可操作的紫外线和红外线辐射源提供。

15. 发明申请

US20090294819A1 METHODS FOR ENHANCING CAPACITORS HAVING ROUGHENED FEATURES TO INCREASE CHARGE-STORAGE CAPACITY 失效
标题翻译：增强电容器增加充电能力的方法
公开(公告)号：US20090294819A1
公开(公告)日：2009-12-03
申请号：US12538779
申请日：2009-08-10
申请人： Randhir P.S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
发明人： Randhir P.S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L29/78 , H01L29/92 , H01L29/02
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/60 , H01L28/82 , H01L28/84
摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
摘要翻译：讨论了制造半导体结构的结构和方法。半导体结构包括具有由未掺杂硅膜形成的突起的粗糙表面。如果半导体结构是电容器，则突起有助于增加电容器的电容。半导体结构还包括与粗糙表面邻接的相对光滑的表面，其中相对光滑的表面由多晶材料形成。

16. 发明授权

US06887774B2 Conductor layer nitridation 有权
标题翻译：导体层氮化
公开(公告)号：US06887774B2
公开(公告)日：2005-05-03
申请号：US10881630
申请日：2004-06-30
申请人： Yongjun Hu , Randhir P.S. Thakur , Scott DeBoer
发明人： Yongjun Hu , Randhir P.S. Thakur , Scott DeBoer
IPC分类号： H01L21/28 , H01L21/8242 , H01L29/49 , H01L21/3205 , H01L29/76
CPC分类号： H01L21/28052 , H01L21/28061 , H01L27/10891 , H01L29/4941 , Y10S257/914 , Y10S257/915
摘要： Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.
摘要翻译：用于形成字线堆叠的方法和装置包括形成耦合在底部硅层和导体层之间的薄氮化物层。在另一个实施例中，扩散阻挡层耦合在薄氮化物层和底部硅层之间。通过在含氮环境中退火氧化硅膜来形成薄氮化物层。

17. 发明授权

US5888295A Method of forming a silicon film 失效
标题翻译：硅膜的形成方法
公开(公告)号：US5888295A
公开(公告)日：1999-03-30
申请号：US699826
申请日：1996-08-20
申请人： Gurtej S. Sandhu , Randhir P.S. Thakur
发明人： Gurtej S. Sandhu , Randhir P.S. Thakur
IPC分类号： C30B1/02 , H01L21/02 , H01L21/20 , H01L21/205 , H01L21/285 , H01L21/324 , C30B28/14
CPC分类号： H01L28/84 , C30B1/023 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02667 , Y10S438/964
摘要： A method of forming a silicon layer having a roughened outer surface includes, a) providing a substantially amorphous silicon layer over a substrate, the amorphous silicon layer having an outer surface; b) providing a seeding layer over the amorphous silicon layer outer surface; and c) annealing the amorphous silicon layer and seeding layer under temperature and pressure conditions effective to transform said amorphous layer into a silicon layer having a roughened outer surface. The amorphous silicon layer is preferably provided by providing a first silicon source gas (i.e., silane) within a chemical vapor deposition reactor under first reactive temperature and pressure conditions effective to deposit a substantially amorphous first silicon layer on the substrate. After the amorphous silicon layer deposition, a second silicon source gas (i.e., silane) is provided within the chemical vapor deposition reactor under second reactive temperature and pressure conditions effective to deposit a seeding second layer of polysilicon on the amorphous first silicon layer, the second reactive conditions also being effective to maintain the first silicon layer substantially amorphous during the second silicon layer deposition. Then, the first and second silicon layers are annealed under temperature and pressure conditions effective to transform said amorphous first layer into a silicon layer having a roughened outer surface.
摘要翻译：形成具有粗糙化外表面的硅层的方法包括：a）在衬底上提供基本非晶硅层，所述非晶硅层具有外表面; b）在所述非晶硅层外表面上提供接种层; 以及c）在有效地将所述非晶层变成具有粗糙化的外表面的硅层的温度和压力条件下退火所述非晶硅层和接种层。非晶硅层优选通过在化学气相沉积反应器内的第一反应温度和压力条件下提供第一硅源气体（即，硅烷）来提供，所述第一反应温度和压力条件有效地在基底上沉积基本上非晶的第一硅层。在非晶硅层沉积之后，在第二反应温度和压力条件下，在化学气相沉积反应器内提供第二硅源气体（即，硅烷），该第二反应温度和压力条件有效地将非晶硅第一硅层上沉积第二多晶硅层，第二硅源气体反应条件也有效地在第二硅层沉积期间保持第一硅层基本上是非晶的。然后，第一和第二硅层在有效地将所述非晶第一层转变成具有粗糙化外表面的硅层的温度和压力条件下退火。

18. 发明授权

US5686748A Dielectric material and process to create same 失效
标题翻译：介电材料和工艺相同
公开(公告)号：US5686748A
公开(公告)日：1997-11-11
申请号：US395933
申请日：1995-02-27
申请人： Randhir P.S. Thakur , Gurtej S. Sandhu
发明人： Randhir P.S. Thakur , Gurtej S. Sandhu
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/1085 , H01L28/40
摘要： An embodiment of the present invention describes a method for forming a dielectric material for a storage capacitor during fabrication of a semiconductor memory device, by: cleaning impurities from the surface of a conductive plate of the storage capacitor; forming a nitride film over the conductive plate's cleaned surface; forming a metal silicide film over the nitride film; and oxidizing the metal silicide film by rapid thermal oxide (RTO) processing. A resulting structure is a capacitor having a dielectric material that is an oxidized metal silicide film.
摘要翻译：本发明的一个实施例描述了一种用于在制造半导体存储器件期间形成用于存储电容器的电介质材料的方法，该方法是：从存储电容器的导电板的表面清除杂质; 在导电板的清洁表面上形成氮化物膜; 在氮化膜上形成金属硅化物膜; 并通过快速热氧化（RTO）处理氧化金属硅化物膜。所得结构是具有作为氧化金属硅化物膜的电介质材料的电容器。

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